IGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW30N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl

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1 IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGWN6H 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

2 G C E Highspeedswitchingseriesthirdgeneration IGWN6H HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOP TM technologyoffering verylowvcesat lowemi Verysoft,fastrecoveryantiparalleldiode maximumjunctiontemperature17 C qualifiedaccordingtojedecfortargetapplications Pbfreeleadplating;RoHScompliant completeproductspectrumandpspicemodels: Applications: uninterruptiblepowersupplies weldingconverters converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=2 C Tvjmax Marking Package IGWN6H 6V A 1.9V 17 C GH6 PGTO247 2 Rev.2.2,21412

3 Highspeedswitchingseriesthirdgeneration IGWN6H TableofContents Description Table of Contents Maximum ratings Thermal Resistance Electrical Characteristics Electrical Characteristics diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev.2.2,21412

4 Highspeedswitchingseriesthirdgeneration IGWN6H Maximumratings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 2 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=2 C TC=1 C IC 6.. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 12. A Turn off safe operating area VCE 6V,Tvj 17 C,tp=1µs 12. A Gateemitter voltage VGE ±2 V Short circuit withstand time VGE=1.V,VCC 4V Allowed number of short circuits < 1 Time between short circuits: 1.s Tvj=1 C PowerdissipationTC=2 C PowerdissipationTC=1 C tsc Ptot Operating junction temperature Tvj C Storage temperature Tstg...+1 C Soldering temperature, wave soldering 1.6 mm (.6 in.) from case for 1s 26 Mounting torque, M screw Maximum of mounting processes: A µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance junction ambient Rth(jc).8 K/W Rth(ja) 4 K/W ElectricalCharacteristic,atTvj=2 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=2.mA 6 V Collectoremitter saturation voltage VCEsat VGE=1.V,IC=.A Tvj=2 C Tvj=12 C Tvj=17 C Gateemitter threshold voltage VGE(th) IC=.4mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=2 C Tvj=17 C Gateemitter leakage current IGES VCE=V,VGE=2V 1 na Transconductance gfs VCE=2V,IC=.A 16. S V µa 4 Rev.2.2,21412

5 Highspeedswitchingseriesthirdgeneration IGWN6H ElectricalCharacteristic,atTvj=2 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 16 Output capacitance Coes VCE=2V,VGE=V,f=1MHz 17 Reverse transfer capacitance Cres Gate charge Internal emitter inductance measured mm (.197 in.) from case Short circuit collector current Max. 1 short circuits Time between short circuits: 1.s QG VCC=48V,IC=.A, VGE=1V pf 16. nc LE 1. nh IC(SC) VGE=1.V,VCC 4V, tsc µs Tvj=1 C 16 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=2 C Turnon delay time td(on) Tvj=2 C, 21 ns Rise time VCC=4V,IC=.A, tr ns VGE=./1.V, Turnoff delay time td(off) rg=1.ω,lσ=9nh, 27 ns Fall time Cσ=67pF tf 22 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.94 mj Turnoff energy diode (IKWN6H) reverse Eoff.44 mj recovery. Total switching energy Ets 1.8 mj SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=17 C Turnon delay time td(on) Tvj=17 C, 2 ns Rise time VCC=4V,IC=.A, tr ns VGE=./1.V, Turnoff delay time td(off) rg=1.ω,lσ=9nh, 29 ns Fall time Cσ=67pF tf 2 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 1.12 mj Turnoff energy diode (IKWN6H) reverse Eoff.6 mj recovery. Total switching energy Ets 1.72 mj Rev.2.2,21412

6 Highspeedswitchingseriesthirdgeneration IGWN6H IC,COLLECTORCURRENT[A] TC=8 TC=11 IC,COLLECTORCURRENT[A] 1 1 tp=1µs 1µs µs 1µs 2µs µs DC 1 TC=8 TC= f,switchingfrequency[khz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj 17 C,D=.,VCE=4V,VGE=1/V, rg=1,ω) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 2. Forwardbiassafeoperatingarea (D=,TC=2 C,Tj 17 C;VGE=1V) Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure. Powerdissipationasafunctionofcase temperature (Tj 17 C) TC,CASETEMPERATURE[ C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE 1V,Tj 17 C) 6 Rev.2.2,21412

7 IGWN6H VGE=2V VGE=2V 1 17V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 1 1V 8 1V 11V 9V 6 7V V V 1V 8 1V 11V 9V 6 7V V VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical output characteristic (Tj=2 C) VCE(sat), COLLECTOREMITTER SATURATION [V] Tj=2 C Tj=17 C 9 8 IC, COLLECTOR CURRENT [A] 2 Figure 6. Typical output characteristic (Tj=17 C) VCE, COLLECTOREMITTER VOLTAGE [V] IC=1A IC=A IC=6A VGE, GATEEMITTER VOLTAGE [V] Tj, JUNCTION TEMPERATURE [ C] Figure 7. Typical transfer characteristic (VCE=2V) Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (VGE=1V) 7 Rev. 2.2, 21412

8 IGWN6H 1 td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr IC, COLLECTOR CURRENT [A] rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of collector current (ind. load, Tj=17 C, VCE=4V, VGE=1/V, rg=1,ω, test circuit in Fig. E) Figure 1. Typical switching times as a function of gate resistor (ind. load, Tj=17 C, VCE=4V, VGE=1/V, IC=A, test circuit in Fig. E) 7 VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] t, SWITCHING TIMES [ns] td(off) tf td(on) tr typ. min. max Tj, JUNCTION TEMPERATURE [ C] Tj, JUNCTION TEMPERATURE [ C] Figure 11. Typical switching times as a function of junction temperature (ind. load, VCE=4V, VGE=1/V, IC=A, rg=1,ω, test circuit in Fig. E) Figure 12. Gateemitter threshold voltage as a function of junction temperature (IC=.4mA) 8 Rev. 2.2, 21412

9 IGWN6H. Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] Eoff Eon Ets IC, COLLECTOR CURRENT [A] Figure 1. Typical switching energy losses as a function of collector current (ind. load, Tj=17 C, VCE=4V, VGE=1/V, rg=1,ω, test circuit in Fig. E) Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] 18 Figure 14. Typical switching energy losses as a function of gate resistor (ind. load, Tj=17 C, VCE=4V, VGE=1/V, IC=A, test circuit in Fig. E) rg, GATE RESISTOR [Ω] Tj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 1. Typical switching energy losses as a function of junction temperature (ind load, VCE=4V, VGE=1/V, IC=A, rg=1,ω, test circuit in Fig. E) Figure 16. Typical switching energy losses as a function of collector emitter voltage (ind. load, Tj=17 C, VGE=1/V, IC=A, rg=1,ω, test circuit in Fig. E) 9 Rev. 2.2, 21412

10 IGWN6H 16 12V 48V C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] Cies Coes Cres QGE, GATE CHARGE [nc] Figure 17. Typical gate charge (IC=A) 1 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] 2 Figure 18. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=1mhz) VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 4V, start attj=2 C) Figure 2. Short circuit withstand time as a function of gateemitter voltage (VCE 4V, start at Tj 1 C) 1 Rev. 2.2, 21412

11 IGWN6H ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] 1 D= single pulse.1 i: ri[k/w]: τi[s]: 6.E 4.7E4 6.1E E6 1E 1E tp, PULSE WIDTH [s] Figure 21. IGBT transient thermal impedance (D=tp/T) 11 Rev. 2.2, 21412

12 IGWN6H PGTO Rev. 2.2, 21412

13 IGWN6H vge(t) 9% VGE a a b b t ic(t) 9% IC 9% IC 1% IC 1% IC t vce(t) t td(off) tf td(on) t tr vge(t) 9% VGE 1% VGE t ic(t) 2% IC t vce(t) 2% VCE t1 t2 t t4 t 1 Rev. 2.2, 21412

14 IGWN6H Revision History IGWN6H Revision: 21412, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Preliminary datasheet New value ICES max limit at 17 C Max ratings Vce, Tvj 2 C We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG Munich, Germany München, Germany 214 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.2, 21412