Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

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1 Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR8W RGs =B =E 3=C SOT33 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 35 ma Base current I B 4 Total power dissipation ) T S 90 C P tot 50 mw Junction temperature T J 50 C Ambient temperature T A Storage temperature T Stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 40 K/W T S is measured on the collector lead at the soldering point to the pcb For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation)

2 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = 0 V (BR)CEO V Collectoremitter cutoff current V CE = 4 V, V BE = 0 V CE = 5 V, V BE = 0 V, T A = 85 C (verified by random sampling) Collectorbase cutoff current V CB = 4 V, I E = 0 Emitterbase cutoff current V EB = V, I C = 0 DC current gain I C = ma, V CE = 8 V, pulse measured I CES na I CBO 30 I EBO 50 h FE

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 8 GHz I C = 5 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Minimum noise figure I C = 3 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 3 ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 0.6 C eb 0.8 NF min db Power gain, maximum stable ) I C = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain I C = ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz I C = ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 GHz G ms 9 db G ma.5 db S e db 5.5 G ms = S / S G ma = S e / S e (k(k²) / )

4 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot 00 RthJS D = C 50 T S s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = s 0 t p

5 Package SOT33 BFR8W

6 Edition 0096 Published by Infineon Technologies AG 876 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered

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