IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGP40N65H5,IGW40N65H5 650VIGBThighspeedswitchingseriesfifthgeneration. Datasheet

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1 IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology IGP4N65H5,IGW4N65H5 65VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

2 IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOP TM 5technology FeaturesandBenefits: HighspeedH5technologyoffering BestinClassefficiencyinhardswitchingandresonant topologies PlugandplayreplacementofpreviousgenerationIGBTs 65Vbreakdownvoltage LowgatechargeQG Maximumjunctiontemperature C QualifiedaccordingtoJEDECfortargetapplications Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: G C E Applications: 2 3 Solarconverters Uninterruptiblepowersupplies Weldingconverters Midtohighrangeswitchingfrequencyconverters Packagepindefinition: Pingate Pin2&backsidecollector Pin3emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj= C Tvjmax Marking Package IGP4N65H5 65V 4A.65V C G4EH5 PGTO223 IGW4N65H5 65V 4A.65V C G4EH5 PGTO Rev.2.,43

3 IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing PGTO Package Drawing PGTO Testing Conditions Revision History Disclaimer Rev.2.,43

4 IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj C VCE 65 V DCcollectorcurrent,limitedbyTvjmax TC= C TC= C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 2. A Turn off safe operating area VCE 65V,Tvj C,tp=µs Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) PowerdissipationTC= C PowerdissipationTC= C 2. A VGE Ptot ±2 ±3.. Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering.6mm (.63in.) from case for s Mounting torque, M3 screw Maximum of mounting processes: 3 PGTO223 PGTO A V W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance junction ambient Rth(jc).6 K/W Rth(ja) PGTO223 PGTO K/W ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 65 V Collectoremitter saturation voltage VCEsat VGE=5.V,IC=4.A Tvj= C Tvj= C Tvj= C Gateemitter threshold voltage VGE(th) IC=.4mA,VCE=VGE V Zero gate voltage collector current ICES VCE=65V,VGE=V Tvj= C Tvj= C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=4.A 5. S V µa 4 Rev.2.,43

5 IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies Output capacitance Coes VCE=V,VGE=V,f=MHz 4 Reverse transfer capacitance Cres 9 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG LE VCC=52V,IC=4.A, VGE=5V PGTO223 PGTO2473 pf 95. nc nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj= C Turnon delay time td(on) Tvj= C, 22 ns Rise time VCC=4V,IC=2.A, tr 2 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 65 ns Fall time Lσ=3nH,Cσ=3pF tf 3 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.39 mj Turnoff energy Eoff diode reverse recovery..2 mj Total switching energy Ets.5 mj Turnon delay time td(on) Tvj= C, 9 ns Rise time VCC=4V,IC=5.A, tr 4 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 9 ns Fall time Lσ=3nH,Cσ=3pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.9 mj Turnoff energy Eoff diode reverse recovery..5 mj Total switching energy Ets.4 mj 5 Rev.2.,43

6 IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=5 C Turnon delay time td(on) Tvj=5 C, 2 ns Rise time VCC=4V,IC=2.A, tr 2 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 95 ns Fall time Lσ=3nH,Cσ=3pF tf 22 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.54 mj Turnoff energy Eoff diode reverse recovery..22 mj Total switching energy Ets.76 mj Turnon delay time td(on) Tvj=5 C, 9 ns Rise time VCC=4V,IC=5.A, tr 5 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=5.Ω,RG(off)=5.Ω, 24 ns Fall time Lσ=3nH,Cσ=3pF tf 33 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.5 mj Turnoff energy Eoff diode reverse recovery..7 mj Total switching energy Ets.22 mj 6 Rev.2.,43

7 IGP4N65H5, IGW4N65H5 2 Ptot, POWER DISSIPATION [W] IC, COLLECTOR CURRENT [A] 2 tp=µs µs 5µs µs 2µs 2 5 5µs 5 DC. VCE, COLLECTOREMITTER VOLTAGE [V] 5 5 TC, CASE TEMPERATURE [ C] Figure. Forward bias safe operating area (D=, TC= C, Tvj C; VGE=5V. Recommended use at VGE 7.5V) Figure 2. Power dissipation as a function of case temperature (Tvj C) VGE=2V 6 IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] V 8 5V 2V 6 V 8V 7V 4 6V 5V TC, CASE TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Collector current as a function of case temperature (VGE 5V, Tvj C) Figure 4. Typical output characteristic (Tvj= C) 7 Rev. 2., 43

8 IGP4N65H5, IGW4N65H5 2 2 Tj= C Tj=5 C IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] VGE=2V 8V 8 5V 2V 6 V 8V 7V 4 6V V VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tvj=5 C) Figure 6. Typical transfer characteristic (VCE=2V) 2.5 IC=A IC=2A IC=4A 2. td(off) tf td(on) tr 2. t, SWITCHING TIMES [ns] VCEsat, COLLECTOREMITTER SATURATION [V] Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=5V) (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω, Dynamic test circuit in Figure E) 8 Rev. 2., 43

9 IGP4N65H5, IGW4N65H5 td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A,Dynamic test circuit in Figure E) 5 8 typ. min. max. 5. Eoff Eon Ets 7 E, SWITCHING ENERGY LOSSES [mj] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) Tvj, JUNCTION TEMPERATURE [ C] 5 5 Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.4mA) 9 Figure 2. Typical switching energy losses as a function of collector current (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω,dynamic test circuit in Figure E) Rev. 2., 43

10 IGP4N65H5, IGW4N65H5.6.8 Eoff Eon Ets.7 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] Eoff Eon Ets rg, GATE RESISTOR [Ω] Figure 3. Typical switching energy losses as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A, Dynamic test circuit in Figure E) 5 3V 52V 4 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] 6 Eoff Eon Ets Figure 4. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E)..9 5 Tvj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=5 C, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) QGE, GATE CHARGE [nc] Figure 6. Typical gate charge (IC=4A) Rev. 2., 43

11 IGP4N65H5, IGW4N65H5 E+4 Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Cies Coes Cres C, CAPACITANCE [pf] D= single pulse. i: ri[k/w]: τi[s]: 7.3E5 7.E E6 3 VCE, COLLECTOREMITTER VOLTAGE [V].. E5 E4... tp, PULSE WIDTH [s] Figure 7. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) Figure 8. IGBT transient thermal resistance (D=tp/T) Rev. 2., 43

12 IGP4N65H5, IGW4N65H5 Package Drawing PGTO223 2 Rev. 2., 43

13 IGP4N65H5, IGW4N65H5 Package Drawing PGTO Rev. 2., 43

14 IGP4N65H5, IGW4N65H5 Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 4 Rev. 2., 43

15 IGP4N65H5, IGW4N65H5 Revision History IGP4N65H5, IGW4N65H5 Revision: 43, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision). 229 Preliminary data sheet New Marking Pattern Minor changes Fig., Fig.4 and typ. Eoff at 5 C to.22mj Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 Rev. 2., 43