Smart Power High-Side-Switch

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1 Smar Power High-Side-Swich Feaures Overload proecion Produc Summary Overvolage proecion bb(az) 4 Curren limiaion Operaing volage bb(on) Shor circui proecion On-sae resisance R ON 35 mω Thermal shudown wih resar Nominal load curren I L(nom).8 A Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion wih exernal resisor CMOS compaible inpu Loss of and loss of bb proecion ESD - Proecion ery low sandby curren Applicaion All ypes of resisive, inducive and capaciive loads µc compaible power swich for and 4 DC applicaions Replaces elecromechanical relays and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu, monolihically inegraed in Smar SIPMOS echnology. Providing embedded proecive funcions. Page

2 Block Diagram + bb olage source Overvolage proecion Curren limi Gae proecion Logic ESD Logic Charge pump Level shifer Recifier Limi for unclamped ind. loads Temperaure sensor Load miniprofet Signal Load Pin Symbol Funcion Logic ground Inpu, acivaes he power swich in case of logic high signal 3 Oupu o he load 4 NC no conneced 5 bb Posiive power supply volage 6 bb Posiive power supply volage 7 bb Posiive power supply volage 8 bb Posiive power supply volage Pin configuraion Top view 8 bb 7 bb 3 6 bb NC 4 5 bb Page

3 Maximum Raings a Tj = 5 C, unless oherwise specified Parameer Symbol alue Uni Supply volage bb 4 Supply volage for full shor circui proecion bb(sc) 3 = C Coninuous inpu volage Load curren (Shor - circui curren, see page 5) I L self limied A Curren hrough inpu pin (DC) I ± 5 ma Operaing emperaure C Sorage emperaure T sg Power dissipaion ) P o.5 W Inducive load swich-off energy dissipaion )) single pulse, (see page 8) Tj =5 C, bb = 3.5, I L =.5 A Load dump proecion ) LoadDump 3)= A + S R I =Ω, d =4ms, = low or high, A =3,5 R L = 7 Ω R L = 45 Ω Elecrosaic discharge volage (Human Body Model) according o ANSI EOS/ESD - S ESD STM Inpu pin all oher pins E AS mj Loaddump ESD Thermal Characerisics Thermal min. fooprin R h(ja) K/W Thermal 6 cm cooling area ) R h(ja) ± ± 5 k Device on 5mm*5mm*.5mm epoxy PCB FR4 wih 6 cm (one layer, 7µm hick) copper area for drain connecion. PCB is verical wihou blown air. (see page 6) no subjec o producion es, specified by design 3 Loaddump is seup wihou he DUT conneced o he generaor per ISO and D Supply volages higher han bb(az) require an exernal curren limi for he pin, e.g. wih a 5Ω resisor in connecion. A resisor for he proecion of he inpu is inegraed. Page 3

4 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a = C, bb = 3,5, unless oherwise specified min. yp. max. Load Swiching Capabiliies and Characerisics On-sae resisance = 5 C, I L =.5 A, bb = = 5 C Nominal load curren; Device on PCB ) T C = 85 C, 5 C Turn-on ime o 9% R L = 47 Ω Turn-off ime o % R L = 47 Ω Slew rae on o 3%, R L = 47 Ω Slew rae off 7 o 4%, R L = 47 Ω R ON mω I L(nom).8. - A on µs off d/d on - - /µs -d/d off - - Operaing Parameers Operaing volage bb(on) 5-34 Undervolage shudown of charge pump bb(under) Undervolage resar of charge pump bb(u cp) Sandby curren = C, = = 5 C ), = Leakage oupu curren (included in I bb(off) ) = Operaing curren = 5 I bb(off) µa I L(off) I - - ma Device on 5mm*5mm*.5mm epoxy PCB FR4 wih 6 cm (one layer, 7µm hick) copper area for drain connecion. PCB is verical wihou blown air. (see page 6) higher curren due emperaure sensor Page 4

5 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a = C, bb = 3,5, unless oherwise specified min. yp. max. Proecion Funcions ) Iniial peak shor circui curren limi (pin 5 o 3) = -4 C, bb = = 5 C = 5 C I L(SCp) A Repeiive shor circui curren limi = (see iming diagrams) Oupu clamp (inducive load swich off) a = bb - ON(CL), I bb = 4 ma I L(SCr) ON(CL) Overvolage proecion ) bb(az) I bb = 4 ma Thermal overload rip emperaure C Thermal hyseresis - - K Reverse Baery Reverse baery 3) - bb Drain-source diode volage ( > bb ) = 5 C - ON m Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. see also ON(CL) in circui diagram on page 7 3Requires a 5 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Power dissipaion is higher compared o normal operaing condiions due o he volage drop across he drain-source diode. The emperaure proecion is no acive during reverse curren operaion! Inpu curren has o be limied (see max. raings page 3). Page 5

6 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a = C, bb = 3,5, unless oherwise specified min. yp. max. Inpu Inpu urn-on hreshold volage (T+) - -. (see page ) Inpu urn-off hreshold volage (T-) (see page ) Inpu hreshold hyseresis (T) Off sae inpu curren (see page ) I (off) - 3 µa =.7 On sae inpu curren (see page ) I (on) - 3 = 5 Inpu resisance (see page 6) R I kω Page 6

7 Terms Inducive and overvolage oupu clamp I bb + bb Z I bb PROFET I L ON ON bb R I ON clamped o 47 yp. Inpu circui (ESD proecion) Overvolage proecion of logic par R I + bb Z ESD- ZDI I I R I Logic Z The use of ESD zener diodes as volage clamp a DC condiions is no recommended R Reverse baery proecion bb - Z =6. yp., Z = bb(az) =47 yp., R I =3.5 kω yp., R =5Ω Signal Logic R I Power Inverse Diode R R L Signal Power R =5Ω, R I =3.5kΩ yp., Temperaure proecion is no acive during inverse curren Page 7

8 disconnec bb disconnec wih charged inducive load bb bb PROFET high PROFET bb bb disconnec wih pull up bb Inducive Load swich-off energy dissipaion PROFET E bb E AS bb E Load bb = PROFET L Z L{ E L E R R L Energy sored in load inducance: E L = ½ * L * I L While demagneizing load inducance, he enérgy dissipaed in PROFET is E AS = E bb + E L - E R = ON(CL) * i L () d, wih an approximae soluion for R L > Ω: E AS IL * L IL * R L = *( bb+ CL + * R ( ) )*ln( L CL ) ( ) Page 8

9 Typ. ransien hermal impedance Z hja =f( p 6cm heasink area Parameer: D= p /T ZhJA K/W D=.5 D=. D=. D=.5 D=. D=. Typ. ransien hermal impedance Z hja =f( p min. fooprin Parameer: D= p /T ZhJA K/W D=.5 D=. D=. D=.5 D=. D=. - D= - D= Typ. on-sae resisance R ON = f( ) ; bb = 3,5 ; in = high p s Typ. on-sae resisance R ON = f( bb ); I L =.5A ; in = high p s 45 6 mω mω Ron 35 RON 4 5 C C 5-4 C C bb Page 9

10 Typ. urn on ime on = f( ); R L = 47Ω Typ. urn off ime off = f( ); R L = 47Ω µs µs 3, on 8 3,5 off C 6 Typ. slew rae on d/d on = f( ) ; R L = 47 Ω C 6 Typ. slew rae off d/d off = f( ); R L = 47 Ω /µs /µs.6.6 d don.4 -d doff , C C 6 Page

11 Typ. sandby curren I bb(off) = f( ) ; bb = 3 ; = low Typ. leakage curren I L(off) = f( ) ; bb = 3 ; = low 6 µa µa Ibb(off) 4 IL(off) C C 6 Typ. iniial peak shor circui curren limi I L(SCp) = f( ) ; bb = Typ. iniial shor circui shudown ime off(sc) = f(,sar ) ; bb = 5 3 A ms IL(SCp) 3 off(sc) C C 6 Page

12 Typ. inpu curren I (on/off) = f( ); bb = 3,5; = low/high low,7; high = 5 µa Typ. inpu curren I = f( ); bb = 3.5 µa 6 5 C I 8 6 on I C off C 6 Typ. inpu hreshold volage (h) = f( ) ; bb = 3,5 4 8 Typ. inpu hreshold volage (h) = f( bb ) ; = 5 C on on.6.6 (h).4. off (h).4. off C bb Page

13 Maximum allowable load inducance for a single swich off L = f(i L ); sar =5 C, bb =3.5, R L =Ω 4 mh Maximum allowable inducive swich-off energy, single pulse E AS = f(i L ); sar = 5 C, bb = 3,5 7 mj 3 5 L 5 5 EAS mA I L mA I L Page 3

14 Timing diagrams Figure a: bb urn on: Figure b: Swiching a lamp, bb I L Figure a: Swiching a resisive load, urn-on/off ime and slew rae definiion Figure c: Swiching an inducive load 9% on d /doff % d/don off I L I L Page 4

15 Figure 3a: Turn on ino shor circui, shu down by overemperaure, resar by cooling Figure 5: Undervolage resar of charge pump o n I L I L(SCp) I L(SCr) b b ( u n d e r ) b b ( u c p ) off(sc) b b Heaing up of he chip may require several milliseconds, depending on exernal condiions. Figure 4: Overemperaure: Rese if < T J Page 5

16 Package and ordering code all dimensions in mm Package: P-DSO-8-6 Ordering code: Q676-S73-A Published by Infineon Technologies AG, S.-Marin-Srasse 53, D-8669 München Infineon Technologies AG All Righs Reserved. Prined circui board (FR4,.5mm hick, one layer 7µm, 6cm acive heasink area ) as a reference for max. power dissipaion P o nominal load curren I L(nom) and hermal resisance R hja Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. Infineon Technologies is an approved CECC manufacurer. Informaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies Office in Germany or our Infineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies Office. Infineon Technologies Componens may only be used in life-suppor devices or sysems wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Page 6

Smart Two Channel Highside Power Switch

Smart Two Channel Highside Power Switch Smar Two Channel ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse