Datasheet, Rev. 1.1, February 2008 BTS3160D. 10mOhm Smart Low Side Power Switch. Automotive Power

Transcription

1 Daashee, Rev. 1.1, February 2008 BTS3160D 10mOhm Smar Low Side Power Swich Auomoive Power

2 Table of Conens Table of Conens Table of Conens Overview Block Diagram Volage and curren naming definiion Pin Configuraion Pin Assignmen BTS3160D Pin Definiions and Funcions General Produc Characerisics Absolue Maximum Raings Funcional Range Thermal Resisance Supply and Inpu Sage Supply Circui Under Volage Lock Ou / Power On Rese Inpu Circui Readou of Faul Informaion Elecrical Characerisics Supply and Inpu Sages Power Sage Oupu On-sae Resisance Oupu Timing and Slopes Inducive Oupu Clamp Elecrical Characerisics Power Sage Proecion Funcions Thermal Proecion Over Volage Proecion Shor Circui Proecion Elecrical Characerisics Proecion Applicaion Informaion Dimensioning of serial Resisor a IN pin Furher Applicaion Informaion Package Oulines Revision Hisory Daashee 2 Rev. 1.1,

3 BTS3160D 1 Overview The BTS3160D is a one channel low-side power swich in PG-TO package providing embedded proecive funcions. The power ransisor is realized by a N-channel verical power MOSFET. The device is conrolled by a chip in Smar Power Technology. PG-TO Feaures Logic level inpu compaible o 3.3 V or 5V micro conrollers Supply by V bb line, down o 6 V Very low over all leakage curren Providing digial faul informaion Elecrosaic discharge proecion (ESD) Green Produc (RoHS complian) AEC Qualified Table 1 Basic Elecrical Daa Drain volage V D 40 V Supply volage V S V On-Sae resisance a 25 C R DS(ON,max) 10 mω Nominal load curren I Dnom 7.8 A Maximum inrush curren I DSC 70 A Leakage curren MOSFET a V bb = 13.5 V, T J = 85 C I DSS 2 µa Supply curren in off mode a V bb = 13.5 V, T J = 85 C I SSS 4 µa Clamping Energy E AS 0.3 J Type BTS3160D Package PG-TO Daashee 3 Rev. 1.1,

4 Overview Digial Diagnosic Over emperaure shudown Over load shudown Shor circui shudown Proecion Funcions Elecrosaic discharge (ESD) Under volage lock ou Over emperaure (shudown wih lach) Over volage (acive clamped) Applicaion Micro conroller compaible low side power swich wih digial feedback for 12V loads All ypes of resisive, inducive and capaciive loads Suiable for loads wih high inrush curren, such as lamps Also suiable for LEDs because of low leakage curren Replaces elecromechanical relays, fuses and discree circuis Descripion The BTS3160D is a laching one channel low-side power swich in PG-TO package providing embedded proecive funcions. The power ransisor is build by a N-channel verical power MOSFET. The device is conrolled by a conrol chip in Smar Power Technology. The device is able o swich all kind of resisive, inducive and capaciive loads. For lamp loads he lamp-inrushcurren, eigh- o en-imes he nominal curren, has o be considered. The maximal inrush curren has o be below he minimum shor circui shudown curren. The ESD proecion of he V S and IN/Faul pin is in relaion o. The BTS3160D is supplied by he V S Pin. This Pin can be conneced o baery line. The supply volage is moniored by he under volage lock ou circui. The Gae driving uni allows o operae he device in he low ohmic range even wih 3.3 V inpu signal. For PWM applicaion he device offers smooh urn-on and off due o he embedded edge shaping funcion, in order o reduce EMC noise. The over volage proecion is for proecion during load-dump or inducive urn off condiions. The power MOSFET is limiing he drain-source volage, if i ges oo high. This funcion is available even wihou supply. The over emperaure proecion is in order o save he device from overheaing due o overload and bad cooling condiions. In order o reduce he device sress he edge shaping is disabled during hermal shudown. Afer hermal shudown he device says off unil he lach is rese by a IN-Low signal. For high dynamic overload condiions such as shor circui he device will urn off if a cerain load curren is reached. The shor circui shudown is a lach funcion. The device will say off unil he lach is rese by IN-Low signal. In order o reduce he device sress he edge shaping is disabled during shor circui urn off. Daashee 4 Rev. 1.1,

5 Block Diagram 2 Block Diagram V S IN / Faul Under volage lockou Gae Driving Uni Overvolage Proecion Overemperaure Proecion ϑ Drain Error Logic ESD Proecion Shor circui Proecion Figure 1 Block Diagram for he BTS3160D BlockDiagram.emf Daashee 5 Rev. 1.1,

6 Block Diagram 2.1 Volage and curren naming definiion Following figure shows all he erms used in his daashee, wih associaed convenion for posiive values. V bb V bb I S V S R L V S Drain I D V IN I IN IN / Faul V D I Terms.emf Figure 2 Terms Daashee 6 Rev. 1.1,

7 Pin Configuraion 3 Pin Configuraion 3.1 Pin Assignmen BTS3160D (op view) Drain 6 (Tab) IN / Faul V S Figure 3 Pin Configuraion PG-TO PinConfiguraion.emf 3.2 Pin Definiions and Funcions Pin Symbol Funcion 1 V S Supply Volage; Conneced o Baery Volage wih Reverse polariy proecion 2 IN Conrol Inpu and Saus Feedback; Digial inpu 3.3 V or 5 V logic. 3, Tab Drain Drain oupu; Proeced low side power oupu channel 4,5 Ground; Signal ground, Pin 4 and 5 mus be exernally shored 1) No shoring pin 4 and 5 will considerably increase he on-sae resisance and reduce he peak curren capabiliy. 1) Daashee 7 Rev. 1.1,

8 General Produc Characerisics 4 General Produc Characerisics 4.1 Absolue Maximum Raings Absolue Maximum Raings 1) T j = -40 C o +150 C; V S = 6 V o 30 V. All volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Max. Volages Supply volage V S V Supply volage during acive clamping V S(pulse) V 2) Drain volage V D V 3) Drain volage for shor circui proecion V D(SC) 0 30 V Logic inpu volage V IN V Energies Unclamped single pulse inducive energy E AS J I D = 20 A; V bb = 30 V T J(Sar) = 150 C Load dump proecion V LoadDump = V A + V S V LD 0 45 V T J = 25 C Temperaures Juncion Temperaure T j C Sorage Temperaure T sg C ESD Suscepibiliy ESD Resisiviy on all pins V ESD -4 4 kv HBM 4) 1) No subjec o producion es, specified by design. 2) No for DC operaion, only for shor pulse (i.e. loaddump) for a oal of 100 h in full device life. 3) Acive clamped. 4) ESD suscepibiliy, HBM according o EIA/JESD 22-A114B Noe: Sresses above he ones lised here may cause permanen damage o he device. Exposure o absolue maximum raing condiions for exended periods may affec device reliabiliy. Noe: Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. Daashee 8 Rev. 1.1,

9 General Produc Characerisics 4.2 Funcional Range Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Supply Volage V S V Supply curren in off mode I S(OFF) 1.5 µa V IN = 0.0 V; V S = 13.5 V; T J = 25 C 4 V IN = 0.0 V; V S = 13.5 V; 1) T J = 85 C 10 V IN = 0.0 V; V S = 13.5 V; T J = 150 C Supply curren in on I S ma V IN = 5.0 V; V S = 30 V 1) No subjec o producion es, specified by design. Noe: Wihin he funcional range he IC operaes as described in he circui descripion. The elecrical characerisics are specified wihin he condiions given in he relaed elecrical characerisics able. 4.3 Thermal Resisance Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Juncion o Case R hjc K/W 1) Juncion o Ambien R hja 80 K/W fooprin 45 K/W 6 cm² cooling area, see Figure 4 1) No subjec o producion es, specified by design Daashee 9 Rev. 1.1,

10 General Produc Characerisics K/W 10 2 D = D = 0.2 D = 0.1 Z hja D = D = 0.02 D = 0.01 Single pulse s p Figure 4 Typical ransien hermal impedance Z hja = f( p ), D = p/t, T a = 25 C Device on 50 mm 50 mm 1.5 mm epoxy PCB FR4 wih 6 cm 2 (one layer, 70 µm hick) copper area for drain connecion. PCB mouned verical wihou blown air. Zh.emf Daashee 10 Rev. 1.1,

11 Supply and Inpu Sage 5 Supply and Inpu Sage 5.1 Supply Circui The Supply pin V S is proeced agains ESD pulses as shown in Figure 5. Due o an inernal volage regulaor he device can be supplied from baery line. 6.0V...30 V V S Regulaor Z D Supply.emf Figure 5 Supply Circui Under Volage Lock Ou / Power On Rese In order o ensure a sable device behavior under all allowed condiions he Supply volage V S is moniored by he under volage lock ou circui. All device funcions and proecion are given for supply volages above under volage lockou V SUVON bu parameer deviaions are possible below V S(min). There is no failure feedback for V S < V SUVON. Device funcional off V SUVOFF V SUVON V S UVLO_Hyseresis.emf Figure 6 Under Volage Lock Ou Daashee 11 Rev. 1.1,

12 Supply and Inpu Sage 5.2 Inpu Circui Figure 7 shows he inpu circui of he BTS3160D. I s ensured ha he device swiches off in case of open inpu pin. A zener srucure proecs he inpu circui agains ESD pulses. As he BTS3160D has a supply pin, he operaion of he power MOS can be mainained regardless of he volage on he IN pin, herefore a digial saus feedback down o logic low is realized. For readou of he faul informaion, please refer o Readou of Faul Informaion on Page 12 IN/Faul 20µA : 100µA 1.0mA : 3.0mA inpu.emf Figure 7 Inpu Circui Readou of Faul Informaion The BTS3160D provides digial saus informaion via an increased curren on he IN / Faul pin. The volage on his pin is pulled down o logic low if a proper resisor is used. An example for he required circuiry is shown in Figure 8. The increased curren I IN(faul) is an order of magniude above he normal operaion curren I IN(nom) herefore he volage a he IN/Faul pin will decrease. The volage a he pin is deermined by he curren and he serial resisor. We recommend 3k3 for a 3.3V µc and 5k6 for a 5V µc o achieve a logic low signal. For deailed calculaion please refer o Dimensioning of serial Resisor a IN pin on Page 26 V bb V CC V CC V S Micro conroller DO I DO R1 I IN IN/Faul BTS3160D DI V DI Figure 8 Readou of Faul Informaion Faul_Readou.emf Daashee 12 Rev. 1.1,

13 Supply and Inpu Sage 5.3 Elecrical Characerisics Supply and Inpu Sages V S = 6 V o 30 V, T j = -40 C o +150 C All volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. Under Volage Lockou UV-swich-on volage V SUVON 5.5 V V S = 5.5 V UV-swich-off volage V SUVOFF 4.0 V V S = 4.0 V UV-swich-off hyseresis V SUVHY 0.2 V V SUVON - V SUVOFF Digial Inpu / Faul Feedback Low level volage V INL 0.8 V V S = 6 V; no faul condiion High level volage V INH 2.0 V V S = 6 V; no faul condiion Inpu pull down curren I IN µa V IN = 5.3 V; no faul condiion I IN-Faul ma V IN = 5.3 V; all faul condiions Inpu Faul ON hreshold I Faul_ONh 600 ua 1) 1) no subjec o producion es Daashee 13 Rev. 1.1,

14 Power Sage 6 Power Sage The power sage is buil by a N-channel verical power MOSFET (DMOS) 6.1 Oupu On-sae Resisance The on-sae resisance depends on he supply volage as well as on he juncion emperaure T J. Figure 9 shows he dependency over emperaure for he ypical on-sae resisance R DS(on),while Figure 10 shows he dependency over Vs. R DS(on) [ mω ] 16,00 14,00 12,00 10,00 8,00 6,00 V S =10V yp. 4, T [ C ] 150 rdson_tj.emf Figure 9 Typical On-Sae Resisance Daashee 14 Rev. 1.1,

15 Power Sage R DS(on) [mω] 50,00 45,00 40,00 35,00 30,00 25,00 20,00 15,00 10,00 5,00 yp V S [V] Figure 10 Typical On-Sae Resisance R DSon = f(v S ) rdson_vs.emf V S = 10V & V S = 30V V S = 6V I D [A] yp. Figure ,5 1 1,5 V DS [V] Typical Oupu Characerisics, T Jsar = 25 C, Parameer V S Oupuchar.emf Daashee 15 Rev. 1.1,

16 Power Sage 6,00 Idss [µa] I DSS [µa] 4,00 2,00 yp. 0, T J [ C] Tj [ C] Figure 12 Typical Zero Inpu Volage Drain Curren, I DSS = f(t J ) Zeroindrain.emf Daashee 16 Rev. 1.1,

17 Power Sage 6.2 Oupu Timing and Slopes A high signal on he inpu pin causes he power MOSFET o swich on wih a dedicaed slope which is opimized for low EMC emission. Figure 13 shows he iming definiion. IN High Low on off V D ond offd V bb 90 % 60 % 40 % -dv D / d on dv D / d off 10 % Figure 13 Swiching a resisive Load OupuTiming.emf In order o minimize he emission during swiching he BTS3160D limis he slopes during urn on- and off o slow slew rae seings.the definiion is shown in Figure 14. For bes performance of he edge shaping he supply pin V S should be conneced o baery volage. For supply volages oher han nominal baery he edge shaping can differ from he values in he elecrical characerisics able below. IN High Low I D 100 % 80 % di/d slow di/d fas 20 % di/d slow Figure 14 Typical Slopes for resisive Loads EdgeShaping.emf Daashee 17 Rev. 1.1,

18 Power Sage 6.3 Inducive Oupu Clamp When swiching off inducive loads wih low-side swiches, he Drain Source volage V D rises above baery poenial, because he inducance inends o coninue driving he curren. The BTS3160D is equipped wih a volage clamp mechanism ha keeps he Drain-Source volage V D a a cerain level. See Figure 15 for more deails. Drain OupuClamp.emf Figure 15 Oupu Clamp IN High Low I D Overemperaure or shor circui deeced Von V DAZ V bb Figure 16 Swiching an inducance InduciveLoad.emf While demagneizaion of inducive loads, energy has o be dissipaed in he BTS3160D. This energy can be calculaed wih following equaion: V bb V E V DS(CL) R DS(CL) ln 1 L I L = V R L V bb DS(CL) + I L L R L Following equaion simplifies under assumpion of R L = 0 V bb 1 2 E = --LI 2 L V V bb DS(CL) Daashee 18 Rev. 1.1,

19 Power Sage Figure 17 shows he inducance / curren combinaion he BTS3160D can handle. For maximum single avalanche energy please also refer o E AS value in Energies on Page 8 10,0 L [mh] 1,0 V bb = 30V 0,1 Max. 0, I D [A] EAS.emf Figure 17 Maximum load inducance for single pulse L=f (I L ), T j,sar = 150 C Daashee 19 Rev. 1.1,

20 Power Sage 6.4 Elecrical Characerisics Power Sage V S = 6 V o 30 V, T j = -40 C o +150 C All volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. Power Supply On-sae resisance R DS(on) 8 10 mω I D = 20 A; V IN = high; V S = 10 V; T J = 25 C mω I D = 20 A; V IN = high; V S = 10 V; T J = 150 C Nominal load curren I Dnom A ISO load curren I DISO A 1) V on = 0.5 V; T A = 85 C SMD 2) ; V IN = 5.0 V; V S 10 V; T J < 150 C 1) V on = 0.5 V; T C = 85 C; V IN = 5.0 V; V S 10 V; T J < 150 C Off sae drain curren I DSS 6 12 µa V bb = 32 V; V IN = 0.0 V µa 1) V bb = 13.5 V; V IN = 0.0 V; T J = 85 C Dynamic Characerisics Turn-on delay ond µs R L = 2.2 Ω; V bb = V S = 13.5 V Turn-on ime on µs R L = 2.2 Ω; V bb = V S = 13.5 V Turn-off delay offd µs R L = 2.2 Ω; V bb = V S = 13.5 V Turn-off ime off µs R L = 2.2 Ω; V bb = V S = 13.5 V Slew rae on -dv D /d on V/µs R L = 2.2 Ω; V bb = V S = 13.5 V Slew rae off dv D /d off V/µs R L = 2.2 Ω; V bb = V S = 13.5 V Slew rae during edge shaping di/d slow A/µs 1) R L = 2.2 Ω V bb = V S = 13.5 V; ohmic load Daashee 20 Rev. 1.1,

21 Power Sage V S = 6 V o 30 V, T j = -40 C o +150 C All volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Slew rae beween edge shaping di/d fas 0.3 A/µs 1) R L = 2.2 Ω V bb = V S = 13.5 V; ohmic load Faul signal delay dfaul 4 10 µs Inverse Diode Inverse Diode forward volage V D V I D = -12 A; V S = 0 V; V IN = 0.0 V 1) No subjec o producion es. 2) Device on 50 mm 50 mm 1.5 mm epoxy PCB FR4 wih 6 cm 2 (one layer, 70 µm hick) copper area for drain connecion. PCB mouned verical wihou blown air. 1) Daashee 21 Rev. 1.1,

22 Proecion Funcions 7 Proecion Funcions The device provides embedded proecion funcions agains over emperaure, over load and shor circui. Noe: Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaion. 7.1 Thermal Proecion The device is proeced agains over emperaure resuling due o overload and / or bad cooling condiions. The BTS3160D has a hermal lach funcion. The hermal lach is rese by IN-Low signal. See Figure 18 for he lach behavior. The diagram naming refers o Figure 8 IN High Thermal shudown Low T J T JSD T JSD I IN I INfaul dfaul I INnom 0 DI High Low Figure 18 Saus Feedback via Inpu Curren a Over emperaure Thermal_faul_lach.emf 7.2 Over Volage Proecion The BTS3160D is equipped wih a volage clamp mechanism ha keeps he Drain-Source volage V D a a cerain level. This sage is also used for inducive clamping. See Inducive Oupu Clamp on Page 18 for deails. 7.3 Shor Circui Proecion The condiion shor circui is an overload condiion of he device. Dependen on he shor circui resisance he curren increase is more or less seep. In condiion of high ohmic shor he device heas up and he urn off is due o over emperaure. In condiion low ohmic shor he device urns off on a hreshold curren level before he over emperaure condiion is deeced. In order o allow shor curren spikes, he urn off occurs wih he delay ime dsc. Figure 19 shows he behavior menioned above. In his example he shor circui always occurs afer he device has swiched on under normal load condiion - Shor circui ype 2. The definiions of volages and currens are in respec o Figure 8. The behavior of V DI also depends on R IN. Daashee 22 Rev. 1.1,

23 Proecion Funcions V DO Overload Thermal shudown Shor circui Shor Circui shu off shor spike High Low I D I DSC dsc dsc I Dnom I IN dfaul dfaul I INfaul I INnom 0 V DI High Low Figure 19 Shor Circui during On Sae, Typical Behavior for Ohmic Loads Shor circui Type 2.emf IN High Thermal shudown Shor Circui shu off shor spike Low I D I DSC dsc dsc I Dnom I IN dfaul dfaul I INfaul I INnom 0 DI High Low Shor circui Type 1.emf Figure 20 Turn On ino Exising Shor Circui, Typical Behavior for Ohmic Loads The case when he device swiches on ino an exising shor circui - Shor circui ype 1- is shown in Figure 20. Daashee 23 Rev. 1.1,

24 Proecion Funcions The es seup for shor circui characerizaion is shown in Figure 21. The BTS3160D is a low side swich. Therefore i can be assumed ha he micro conroller and device connecion have a low impedance. The V s volage needs o be sabilized o ensure he proecion feaures. In applicaion his is ofen already covered from he module sandard circuis. R SC L SC I D Vcc V S Drain V bb 5V Conrol circui R IN IN BTS3160 S eup_s hor_circ ui.emf Figure 21 Tes Seup for Shor Circui Characerizaion Tes Daashee 24 Rev. 1.1,

25 Proecion Funcions 7.4 Elecrical Characerisics Proecion I DSC A V S = 6 V o 30 V, T j = -40 C o +150 C All volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. Thermal Proecion Thermal shu down juncion T JSD ) C V S = 6.0 V emperaure Thermal hyseresis T JSD 10 K 1) V S = 6.0 V Over Volage Proecion Drain source clamp volage V DAZ V I D = 10 ma; V S = 0.0 V; V IN = 0.0 V V I D = 8 A; V S = 0.0 V; V IN = 0.0 V Shor Circui Proecion, 6.0 V V S 30 V Shor circui shudown curren for max. dsc Shor circui shudown delay dsc µs 1) I D > I D(SC), ohmic load 1) No subjec o producion es, specified by design. Daashee 25 Rev. 1.1,

26 Applicaion Informaion 8 Applicaion Informaion Noe: The following informaion is given as a hin for he implemenaion of he device only and shall no be regarded as a descripion or warrany of a cerain funcionaliy, condiion or qualiy of he device. 8.1 Dimensioning of serial Resisor a IN pin In order o use he digial feedback funcion of he device, here is serial resisor necessary beween he IN pin and he driver (micro conroller) To calculae he value of his serial resisor on he inpu pin hree device condiions as well as he driver (micro conroller) abiliies needs o be aken ino accoun. The driver mus be capable of driving a leas IFaul_ONh o avoid immediae resar Figure 22 shows he circui used for reading ou he digial saus. V bb Microconroller DO I DO V CC V CC V RIN R IN V S BTS3160D DI I IN IN/Faul V DO V DI 20µA : 100µA Faul informaion 1.0mA : 3.0mA Figure 22 Circuiry o readou faul informaion Faul_RIN.emf Noe: This is a very simplified example of an applicaion circui. The funcion mus be verified in he real applicaion. Condiions o be mee by he circuiry: During normal operaion V IN mus be higher han V INH,min o swich ON. During faul condiion he max. capabiliy of he driver (micro conroller) mus no be exceeded and he logic low level a DI mus be ensured by a volage drop over he serial resisor R IN while he device faul curren is flowing. During faul sae he device keeps proecion acive as long as i can sink more han he hreshold curren I Faul_ONh. In case he device can no sink his curren, i reses he proecion and wais for he nex inpu high signal. So o avoid an uninenional swich ON/OFF behavior, he inpu curren mus be above his hreshold. Daashee 26 Rev. 1.1,

27 Applicaion Informaion Condiions in formulas: 1. µcoupu curren,min > µc HIGH,max / R IN > I Faul_ONh wih µcoupu curren,min referring o he micro conroller maximum oupu curren capabiliy. wih µchigh,max referring o he maximal high oupu volage of he micro conroller driving sage. This condiion is valid during saus feedback operaion mode. 2. V IN = µc HIGH,min - (R IN * I IN,max) > V INH,min wih µchigh,min referring o he minimal high oupu volage of he micro conroller driving sage. This condiion is valid during normal operaion mode 3. µc HIGH,max - (R IN * I IN -Faul,min) < µc(di)l,max wih µc(di)l,max referring o he maximum logic low volage of he micro conroller inpu sage The maximum curren is eiher defined by he BTS3160D or he micro conroller driving sage This condiion is valid during saus feedback operaion mode 4. I IN-Faul = µc HIGH,min / R IN > I Faul_ONh wih µc HIGH,min referring o he minimum logic low volage of he micro conroller oupu sage The BTS3160D is reseing he faul lach, if he curren on IN pin goes below I Faul_ONh. This condiion is valid during saus feedback operaion mode Ou of his condiions he minimum and maximum resisor values can be calculaed. For a ypical 5V micro conroller wih oupu curren capabiliy in he 3 ma range, a resisor range from 7.5 kω down o 4.5 kω can be used. For a ypical 3.3V micro conroller a range from 4.6 kω o 2.5 kω is suiable. We recommend 3k3 for a 3.3V µc and 5k6 for a 5V µc o achieve a logic low signal. 8.2 Furher Applicaion Informaion For furher informaion you may conac hp:// Daashee 27 Rev. 1.1,

28 Package Oulines 9 Package Oulines 9.98± (4.24) 1± (5) A 5.7 MAX. 0.8±0.15 1) B MAX. per side x 0.6± M A B 0.51 MIN B 1) Includes mold flashes on each side. All meal surfaces in plaed, excep area of cu. PG-TO PO V0.1 Figure 23 PG-TO (Plasic Green Thin Ouline Package) Green Produc (RoHS complian) To mee he world-wide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoHS-Complian (i.e Pb-free finish on leads and suiable for Pb-free soldering according o IPC/JEDEC J-STD-020). You can find all of our packages, sors of packing and ohers in our Infineon Inerne Page Producs : hp:// Dimensions in mm Daashee 28 Rev. 1.1,

29 Revision Hisory 10 Revision Hisory Version Dae Changes Rev released auomoive green and robus version changed package naming o green package, updaed package drawing updaed package drawing and descripion ex on overview page added RoHS logo o overview page and added green feaure o lis Rev firs released daashee revision Daashee 29 Rev. 1.1,

30 Ediion Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of non-infringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. Infineon Technologies componens may be used in life-suppor devices or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered.