Smart Lowside Power Switch
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- Jody Dalton
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1 Smart Lowside Power Switch HITFET = BTS 133 Features Logic Level Input Product Summary Drain source voltage V DS 6 V Input Protection (ESD) Onstate resistance R DS(on) 5 mω =Thermal shutdown with latch Current limit I D(lim) 21 A Overload protection Nominal load current I D(ISO) 7 A Short circuit protection Overvoltage protection Current limitation Status feedback with external input resistor Analog driving possible Clamping energy E AS 2 mj Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µc compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M 1 IN dv/dt limitation Current limitation Overvoltage protection Drain 2 ESD Overload protection Overprotection temperature Short Short circuit circuit protection Source 3 HITFET Page 1
2 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Drain source voltage V DS 6 V Drain source voltage for short circuit protection V DS(SC) 32 Continuous input current 1) ma.2v V IN V V IN <.2V or V IN > V no limit I IN 2 Operating temperature T j C Storage temperature T stg Power dissipation P tot 9 W T C = 25 C Unclamped single pulse inductive energy E AS 2 mj I D(ISO) = 7 A Electrostatic discharge voltage (Human Body Model) V ESD 3 V according to MIL STD 883D, method and EOS/ESD assn. standard S Load dump protection V 2) LoadDump = V A + V S V IN =low or high; V A =13.5 V t d = 4 ms, R I = 2 Ω, I D =,5*7A t d = 4 ms, R I = 2 Ω, I D = 7A DIN humidity category, DIN 4 4 I IN V LD IEC climatic category; DIN IEC 681 4/15/ E Thermal resistance junction case: R thjc 1.4 K/W junction ambient: R thja 75 SMD version, device on PCB: 3) R thja 45 1In case of thermal shutdown a minimum sensor holding current of 5 µa has to be guaranteed (see also page 3). 2 VLoaddump is setup without the DUT connected to the generator per ISO and DIN Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7µm thick) copper area for Drain connection. PCB mounted vertical without blown air. Page 2
3 Electrical Characteristics Parameter Symbol Values Unit at T j =25 C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage V DS(AZ) 6 73 V T j = C, I D = ma Off state drain current I DSS µa V DS = 32 V, T j = C, V IN = V Input threshold voltage V IN(th) V I D = 1,4 ma Input current normal operation, I D <I D(lim) : IIN(1) 3 55 µa V IN = V Input current current limitation mode, I D =I D(lim) : I IN(2) V IN = V Input current after thermal shutdown, I D = A: V IN = V I IN(3) 25 4 Input holding current after thermal shutdown 1) T j = 25 C T j = 15 C Onstate resistance V IN = 5 V, I D = 7 A, T j = 25 C V IN = 5 V, I D = 7 A, T j = 15 C Onstate resistance V IN = V, I D = 7 A, T j = 25 C V IN = V, I D = 7 A, T j = 15 C Nominal load current (ISO 483) V IN = V, V DS =.5 V, T C = 85 C I IN(H) R DS(on) R DS(on) 5 3 mω I D(ISO) 7 A 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur. Page 3
4 Electrical Characteristics Parameter Symbol Values Unit at T j =25 C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit V IN = V, V DS = 12 V Current limit 1) V IN = V, V DS = 12 V, t m = 35 µs, T j = C I D(SCp) 65 A I D(lim) Dynamic Characteristics Turnon time V IN to 9% I D : R L = 2,2 Ω, V IN = to V, V bb = 12 V Turnoff time V IN to % I D : R L = 2,2 Ω, V IN = to V, V bb = 12 V Slew rate on 7 to 5% V bb : R L = 2,2 Ω, V IN = to V, V bb = 12 V Slew rate off 5 to 7% V bb : R L = 2,2 Ω, V IN = to V, V bb = 12 V t on 4 µs t off 7 17 dv DS /dt on 1 3 V/µs dv DS /dt off 1 3 Protection Functions Thermal overload trip temperature T jt C Unclamped single pulse inductive energy I D = 7 A, T j = 25 C, V bb = 32 V I D = 7 A, T j = 15 C, V bb = 32 V E AS mj 2 45 Inverse Diode Inverse diode forward voltage I F = 5*7A, t m = 3 µs, V IN = V V SD 1.8 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 5 µs. Page 4
5 Block Diagramm Terms Inductive and overvoltage output clamp R L V Z D I IN 1 IN HITFET D 2 I D VDS V bb S V IN S 3 HITFET Input circuit (ESD protection) Short circuit behaviour V IN IN I D(SCp) ESDZD I I D I D(Lim) Source ESD zener diodes are not designed for DC current > 2 V IN >V. t tm t 1 t 2 t : Turn on into a short circuit t m : Measurementpoint for I D(lim) t 1 : Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t 2 : Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Page 5
6 Maximum allowable power dissipation P tot = f(t c ) Onstate resistance R ON = f(t j ); I D =7A; V IN =V W BTS 133 mω 8 8 Ptot RDS(on) max typ C Onstate resistance R ON = f(t j ); I D = 7A; V IN =5V C 15 T j Typ. input threshold voltage V IN(th) = f(t j ); I D =1,4mA; V DS =12V 12 mω 2. V RDS(on) max. VIN(th) typ C 15 T j Page C 15 T j
7 Typ. transfer characteristics I D = f(v IN ); V DS =12V; T j =25 C Typ. output characteristic I D = f(v DS ); T j =25 C 24 A Parameter: V IN 25 A V 6V 5V 4V 16 ID ID Vin=3V V V 5 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 V IN V DS K/W D=.5 ZthJC s 2 t P Page 7
8 Application examples: Status signal of thermal shutdown by monitoring input current µc R St IN µc V IN V bb S D HITFET V IN V thermal shutdown V = R ST *I IN(3) Page 8
9 Package Ordering Code Package Ordering Code PTO22345 Q676S651A3 PTO2231 Q676S651A ) GPT5164 1) shear and punch direction no burrs this surface Published by Infineon Technologies AG, Bereichs Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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