N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

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1 Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS 42 V Onstate resistance R DS(on) m Nominal load current I D(Nom) 3 Clamping energy E S mj Overload protection Short circuit protection 4 Overvoltage protection Current limitation 2 3 nalog driving possible 1 VPS163 pplication ll kinds of resistive, inductive and capacitive loads in switching or linear applications µc compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M HITFET Drain Current Limitation Overvoltage Protection Pin 2 and 4 (TB) Pin 1 In GateDriving Unit ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information Datasheet 1 Rev. 1.3, 28414

2 Maximum Ratings at T j = 2 C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage V DS 42 V Supply voltage for full short circuit protection V bb(sc) 42 Continuous input voltage 1) V IN.2 2)... + Continuous input current 2).2V V IN V V IN <.2V or V IN > V I IN self limited I IN 2 Operating temperature T j C Storage temperature T stg Power dissipation ) T C = 8 C m P tot 3.8 W Unclamped single pulse inductive energy 2) E S mj Load dump protection V LoadDump 2)3) = V + V S V IN = and V, t d = 4 ms, R I = 2, R L = 4., V = 13. V Electrostatic discharge voltage 2) (Human Body Model) according to Jedec norm EI/JESD22114B, Section 4 V LD 3. V V ESD 2 kv R thj Thermal resistance junction ambient: min. 6 cm 2 cooling area 4) junctionsoldering point: R thjs 17 K/W 1 For input voltages beyond these limits IIN has to be limited. 2 not subject to production test, specified by design 3 VLoaddump is setup without the DUT connected to the generator per ISO and DIN Device on mm*mm*1.mm epoxy PCB FR4 with 6cm2 (one layer, 7µm thick) copper area for drain connection. PCB mounted vertical without blown air. not subject to production test, calculated by RthJ and R ds(on) Datasheet 2 Rev. 1.3, 28414

3 Electrical Characteristics Parameter Symbol Values Unit at T j = 2 C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage V DS(Z) 42 V T j = , I D = m Offstate drain current I DSS µ T j = C, V DS = 32 V, V IN = V T j = 1 C Input threshold voltage V IN(th) V I D = 1.4 m, T j = 2 C I D = 1.4 m, T j = 1 C On state input current I IN(on) 3 µ Onstate resistance R DS(on) m V IN = V, I D = 3, T j = 2 C V IN = V, I D = 3, T j = 1 C Onstate resistance V IN = V, I D = 3, T j = 2 C V IN = V, I D = 3, T j = 1 C Nominal load current ) V DS =. V, T j < 1 C, V IN = V, T = 8 C Current limit (active if V DS >2. V) 1) V IN = V, V DS = 12 V, t m = 2 µs I D(Nom) 3 4 I D(lim) Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. µs. not subject to production test, calculated by RthJ and R ds(on) Datasheet 3 Rev. 1.3, 28414

4 Electrical Characteristics Parameter Symbol Values Unit at T j = 2 C, unless otherwise specified min. typ. max. Dynamic Characteristics Turnon time V IN to 9% I D : R L = 4.7, V IN = to V, V bb = 12 V Turnoff time V IN to % I D : R L = 4.7, V IN = to V, V bb = 12 V Slew rate on 7 to % V bb : R L = 4.7, V IN = to V, V bb = 12 V Slew rate off to 7% V bb : R L = 4.7, V IN = to V, V bb = 12 V t on 6 µs t off 6 dv DS /dt on.3 1. V/µs dv DS /dt off.7 1. Protection Functions 1) Thermal overload trip temperature T jt 1 17 C Thermal hysteresis 2) T jt K Input current protection mode I IN(Prot) 13 3 µ T j = 1 C Unclamped single pulse inductive energy 2) I D = 3, T j = 2 C, V bb = 12 V E S mj Inverse Diode Inverse diode forward voltage I F = 1, t m = 2 µs, V IN = V, t P = 3 µs V SD 1 1. V 1 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 not subject to production test, specified by design Datasheet 4 Rev. 1.3, 28414

5 Block diagram Terms Inductive and overvoltage output clamp V IN I IN 1 IN HITFET R L D S 2 I D 3 VDS V bb V Z D S HITFET Input circuit (ESD protection) Short circuit behaviour Input Gate Drive VIN Source/ Ground IIN IDS Tj Datasheet Rev. 1.3, 28414

6 1 Maximum allowable power dissipation P tot = f(t S ) resp. P tot = f(t R thj =72 K/W 2 Onstate resistance R ON = f(t j ); I D =3; V IN =V W m max. Ptot 8 max. 7 6 RDS(on) typ cm C 1 T S ;T 3 Onstate resistance R ON = f(t j ); I D = 3; V IN =V C 17 T j 4 Typ. input threshold voltage V IN(th) = f(t j ); I D =.7 m; V DS = 12V 1 m max. V RDS(on) typ. VGS(th) C 17 T j C 1 T j Datasheet 6 Rev. 1.3, 28414

7 Typ. transfer characteristics I D =f(v IN ); V DS =12V; T Jstart =2 C 6 Typ. short circuit current I D(lim) = f(tj); V DS =12V Parameter: V IN ID ID Vin=V 1 1 V V V IN 7 Typ. output characteristics I D =f(v DS ); T Jstart =2 C Parameter: V IN C 17 T j 8 Offstate drain current I DSS = f(t j ) 3 V 16 µ max. ID 2 2 7V 6V V IDSS 12 4V 8 1 Vin=3V 6 4 typ V 6 V DS C 18 T j Datasheet 7 Rev. 1.3, 28414

8 9 Typ. overload current I D(lim) = f(t), V bb =12 V, no heatsink Parameter: T jstart 4 Typ. transient thermal impedance Z thj =f(t p 6 cm 2 cooling area Parameter: D=t p /T 2 K/W D=. ID(lim) C ZthJ C 8 C 2 C 2 Single pulse ms 4 t s 3 t p 11 Determination of I D(lim) I D(lim) = f(t); t m = 2µs Parameter: T Jstart 4 ID(lim) C 2 C 2 8 C 1 1 C ms.6 t Datasheet 8 Rev. 1.3, 28414

9 Package Outlines 1 Package Outlines 6. ±.2 3 ±.1.1 MX. 1.6±.1 4 7±.3 1 MX. 3. ±.2 B ± MIN ±.4.2 M.2 M B Figure 1 PGSOT2234 (Plastic Green Small Outline Transistor Package) GPS6 Green Product (RoHS compliant) To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD2). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : Dimensions in mm Datasheet 9 Rev. 1.3, 28414

10 Revision History 2 Revision History Version Date Changes Rev Package information updated to SOT2234 Rev released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings EC icon added RoHS icon added Green product (RoHScompliant) added to the feature list Package information updated to green Green explanation added Rev released production version Datasheet Rev. 1.3, 28414

11 Edition Published by Infineon Technologies G Munich, Germany Infineon Technologies G 28. ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection HITFET BTS 7N Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS V Onstate resistance R DS(on)