5 V/10 V Low Drop Voltage Regulator TLE 4266
|
|
|
- Buddy Lucas
- 5 years ago
- Views:
Transcription
1 5 /1 Low Drop oltage Regulator TLE 266 Features Output voltage 5 or 1 Output voltage tolerance ±2% 12 ma current capability ery low current consumption Low-drop voltage Overtemperature protection Reverse polarity proof Wide temperature range Suitable for use in automotive electronics Inhibit Green Product (RoHS compliant) AEC Qualified SOT223 Functional Description TLE 266 is a low-drop voltage regulator for 5 or 1 supply in a PG-SOT223- SMD package. The IC regulates an input voltage I in the range of 5.5 /1.5 < I < 5 to Q,nom = 5 /1. The maximum output current is more than 12 ma. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 1 µa. The IC is shortcircuit-proof and incorporates a temperature protection which turns off the IC at overtemperature. Choosing External Components The input capacitor C I is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with C I, the oscillating of input line inductivity and input capacitance can be clamped. The output capacitor C Q is necessary for the stability of the regulating circuit. Stability is guaranteed at values C Q 1 µf and an ESR 1 Ω within the whole operating temperature range. Type TLE 266 G TLE 266 GS1 Package PG-SOT223- PG-SOT223- Data Sheet 1 Rev. 2.5,
2 GND Ι INH Q AEP173 Figure 1 Pin Configuration (top view) Table 1 Pin Definitions and Functions Pin Symbol Function 1 I Input voltage; block to ground directly at the IC with a ceramic capacitor. 2 INH Inhibit; low-active input. 3 Q Output voltage; block to ground with a capacitor C Q 1 µf. GND Ground Data Sheet 2 Rev. 2.5,
3 Circuit Description The device includes a precise reference voltage, which is very accurate due to resistor adjustment. A control amplifier compares the divided output voltage to this reference voltage and drives the base of the PNP series transistor through a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of protection circuitry for: Overload Overtemperature Reverse polarity Temperature Sensor Saturation Control and Protection Circuit Ι 1 3 Q Adjustment Bandgap Reference Control Amplifier Buffer 2 INH GND AEB1725 Figure 2 Block Diagram Data Sheet 3 Rev. 2.5,
4 Table 2 Absolute Maximum Ratings (TLE 266 G, TLE 266 GS1) = - to 15 C Parameter Symbol Limit alues Unit Notes Min. Max. Input oltage I -2 5 Current I I internally limited Inhibit oltage INH -2 5 Output oltage Q Current I Q internally limited GND Current I GND 5 ma Temperature Junction temperature 15 C Storage temperature T S C Operating Range (TLE 266 G) Input voltage I Junction temperature - 15 C Operating Range (TLE 266 GS1) Input voltage I Junction temperature - 15 C Thermal Resistance Junction ambient R thj-a 165 K/W 1) Junction case R thj-pin 17 K/W measured to pin 1) Package mounted on PCB mm 3 ; 35µ Cu; 5µ Sn; Footprint only; zero airflow. Data Sheet Rev. 2.5,
5 Table 3 Characteristics (TLE 266 G) I = 13.5 ; - C 125 C Parameter Symbol Limit alues Unit Test Condition Min. Typ. Max. Output voltage Q ma I Q 1 ma 6 i 28 Output-current limitation I Q ma Current consumption I q = I i - I Q I q 1 µa INH = ; 1 C Current consumption I q = I i - I Q I q µa I Q = 1 ma Inhibit ON Current consumption I q = I i - I Q I q 1 15 ma I Q = 1 ma Inhibit ON Drop voltage DR.25.5 I Q = 1 ma 1) Load regulation Q,lo m I Q = 5 to 1 ma i = 6 Line regulation Q,li 15 3 m I = 6 to 28 I Q = 5 ma Power supply ripple rejection Inhibit PSRR 5 db f r = 1 Hz, r =.5 pp Inhibit on voltage INH, on 3.5 Inhibit off voltage INH, off.8 Inhibit current I INH µa INH = 5 1) Drop voltage = i - Q (measured when the output voltage Q has dropped 1 m from the nominal value obtained at i = 13.5 ). Data Sheet 5 Rev. 2.5,
6 Table Characteristics (TLE 266 GS1) I = 13.5 ; - C 125 C Parameter Symbol Limit alues Unit Test Condition Min. Typ. Max. Output voltage Q ma I Q 1 ma 11 I 21 Output voltage Q ma I Q 5 ma 11 I 28 Output-current limitation I Q ma Current consumption I q = I I - I Q I q,off 1 µa INH = ; 1 C Current consumption I q = I I - I Q I q 35 5 µa I Q < 1 ma Inhibit ON Current consumption I q = I I - I Q I q 7 15 ma I Q < 1 ma Inhibit ON Drop voltage DR.28.5 I Q = 1 ma 1) Load regulation Q,Lo -8 8 m I Q = 5 to 1 ma I = 11 Line regulation Q,Li m I = 11 to 28 I Q = 5 ma Power supply ripple rejection Inhibit PSRR 5 db f r = 1 Hz, r =.5 pp Inhibit on voltage INH, on 3.5 Inhibit off voltage INH, off.8 Inhibit current I INH µa INH = 5 1) Drop voltage = I - Q measured when the output voltage Q has dropped 1 m from the nominal value. Data Sheet 6 Rev. 2.5,
7 Input 5.5 /1.5 to 5 Ι Q Output Ι Ι Ι 7 µf INH Ι e 1 nf TLE 266G INH GND Ι Q 22 µf Q AES1726 Figure 3 Measuring Circuit (TLE 266 G, TLE 266 GS1) Input 5.5 /1.5 to 5 Ι Q Output C Ι TLE 266G C Q 22 µf e.g. Kl. 15 INH GND AES1727 Figure Application Circuit (TLE 266 G, TLE 266 GS1) Data Sheet 7 Rev. 2.5,
8 Drop oltage DR versus Output Current I Q (5, 1 ) Current Consumption I q versus Output Current I Q (5 ) DR 8 m 7 AED1978 Ι q 12 ma 1 AED = 125 C 8 6 i = = 25 C ma ma 15 Ι Q Ι Q Current Consumption I q versus Output Current I Q (5 version) Current Consumption I q versus Output Current I Q (1 version) 3. AED AED1981 Ι q ma Ι q ma i = 13.5 i = ma ma 3 Ι Q Ι Q Data Sheet 8 Rev. 2.5,
9 Current Consumption I q versus Input oltage I (5 version) Current Consumption I q versus Input oltage I (1 version) 15 AED AED2733 Ι q ma Ι q ma 1 R = 5 Ω L 1 R = 1 Ω L 5 5 R L = 1 Ω R L = 2 Ω Ι Ι Output oltage Q versus Temperature (5 version) Q 5.2 AED31 Output oltage Q versus Temperature (1 version) Q 1. AED i = 13.5 i = C C 16 Data Sheet 9 Rev. 2.5,
10 Output oltage Q versus Input oltage I (5 version) Output oltage Q versus Input oltage I (1 version) Q 6 AED198 R L = 5 Ω Q 12 AED2736 R L = 5 Ω Ι Ι Output oltage Q versus Inhibit oltage INH (5 version) Q 6 AED21 Output oltage Q versus Inhibit oltage INH (1 version) Q 12 AED Ι = 13.5 = Ι INH 8 Ι = 13.5 Ι = INH INH INH Data Sheet 1 Rev. 2.5,
11 Output Current I Q versus Input oltage I (5 -version) Ι Q 2 ma AED315 Output Current I Q versus Input oltage I (1 version) Ι Q 2 ma AED = 25 C 15 = 25 C 1 = 125 C 1 = 125 C Ι Ι Data Sheet 11 Rev. 2.5,
12 Package Outlines A ±.2 ±.1.1 max 1.6 ±.1 B +.2 acc. to DIN ±.3 15 max 3.5± min.5.7 ± ± M A.25 M B GPS556 Figure 5 PG-SOT223- (Plastic Small Outline Transistor) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-2). You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : SMD = Surface Mounted Device Dimensions in mm Data Sheet 12 Rev. 2.5,
13 Revision History ersion Date Changes Rev Simplified package name to PG-SOT223-. No modification of released product. Rev Initial version of RoHS-compliant derivate of TLE 266 Page 1: AEC certified statement added Page 1 and Page 12: RoHS compliance statement and Green product feature added Page 1 and Page 12: Package changed to RoHS compliant version Legal Disclaimer updated Data Sheet 13 Rev. 2.5,
14 Edition Published by Infineon Technologies AG Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
5-V Low Drop Fixed Voltage Regulator TLE
5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive
Low Drop Voltage Regulator TLE 4296
Low Drop Voltage Regulator TLE 4296 Features Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption
Low Drop Voltage Regulator TLE
Low Drop Voltage Regulator TLE 4296-2 Features Two versions: 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption Wide operation
Low Drop Voltage Regulator TLE 4295
Low Drop Voltage Regulator TLE 4295 Features Four versions: 2.6 V, 3.0 V, 3.3 V, 5.0 V tolerance ±4% Very low drop voltage Output current: 30 ma Power fail output Low quiescent current consumption Wide
5-V Low Drop Fixed Voltage Regulator TLE 4275
5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof
5-V Low Drop Fixed Voltage Regulator TLE
5- Low Drop Fixed oltage Regulator TLE 471- Features Output voltage tolerance ±% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 4 Overvoltage protection
5-V Low Drop Voltage Regulator TLE 4263
5- Low Drop oltage Regulator TLE 4263 Features Output voltage tolerance ±2% 2 ma output current capability Low-drop voltage ery low standby current consumption Overtemperature protection Reverse polarity
5-V Low Drop Fixed Voltage Regulator TLE 4279
5-V Low Drop Fixed Voltage Regulator TLE 4279 Features Output voltage tolerance ±2% 15 ma current capability Very low current consumption Early warning Reset output low down to V Q = 1 V Overtemperature
5-V Low Drop Voltage Regulator TLE 4290
5-V Low Drop Voltage Regulator TLE 429 Features Output voltage 5 V ± 2% Very low current consumption 45 ma current capability Power Good Feature Very low-drop voltage Short-circuit-proof Reverse polarity
TLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0,
Low Dropout Linear Voltage Regulator Data Sheet Rev. 1., 21-2-8 Automotive Power Low Dropout Linear Voltage Regulator 1 Overview Features Output voltage tolerance ±2% Low dropout voltage Output current
Dual Low-Drop Voltage Regulator TLE 4470
Dual Low-Drop Voltage Regulator TLE 447 Features Stand-by output 18 ma; 5 V ± 2% Adjustable reset switching threshold Main output 35 ma; tracked to the stand-by output Low quiescent current consumption
Data Sheet, Rev. 1.1, February 2008 TLE4294GV50. Low Drop Out Voltage Regulator. Automotive Power
Data Sheet, Rev. 1.1, February 2008 TLE4294GV50 Low Drop Out Voltage Regulator Automotive Power Low Drop Out Voltage Regulator TLE4294GV50 1 Overview Features Output voltage tolerance ±4% Very low drop
Dual Low Dropout Voltage Regulator
Dual Low Dropout Voltage Regulator TLE 4473 GV55-2 Features Stand-by output 190 ma; 5 V ± 2% Main output: 300 ma, 5 V tracked to the stand-by output Low quiescent current consumption Disable function separately
TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1,
Low Dropout Fixed Voltage Regulator TLE42644G Data Sheet Rev. 1.1, 214-7-3 Automotive Power Low Dropout Fixed Voltage Regulator TLE42644G 1 Overview Features Output Voltage 5 V ± 2 % up to Output Currents
Low-Drop Voltage Tracker TLE 4250 G
Low-Drop Voltage Tracker TLE 5 G Features Output tracking tolerance ±.5% 5 ma output current Combined Tracking/Enable input Very low current consumption in off mode Low drop voltage Suitable for use in
1-A Dual-HBD (Dual-Half-Bridge Driver) TLE4207G
-A Dual-HBD (Dual-Half-Bridge Driver) Features Delivers up to.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage;
5-V Low-Drop Fixed Voltage Regulator TLE 4269
5-V Low-Drop Fixed Voltage Regulator TLE 4269 Features Output voltage tolerance ±2 % 15 ma current capability Very low current consumption Early warning Reset output low down to V Q = 1 V Overtemperature
5-V Low Drop Fixed Voltage Regulator TLE 4299
5-V Low Drop Fixed Voltage Regulator TLE 4299 Features Output voltage 5 V ± 2% 150 ma Output current Extreme low current consumption typical 65 µa in ON state Inhibit function: Below 1 µa current consumption
IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1.
1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV5 Data Sheet Rev. 1.1, 21-7-2 Standard Power 1A Low-Dropout Linear Voltage Regulator IFX8117 1 Overview Features 5 V, 3.3 V and
TLE Data Sheet. Automotive Power. 5-V Low Dropout Voltage Regulator TLE7274-2E TLE7274-2D TLE7274-2G. Rev. 1.01,
5-V Low Dropout Voltage Regulator TLE7274-2E TLE7274-2D TLE7274-2G Data Sheet Rev. 1.1, 211-11-3 Automotive Power 5-V Low Dropout Voltage Regulator TLE7274-2 1 Overview Features Ultra Low Current Consumption
TLF80511TF. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511TFV50 TLF80511TFV33. Rev. 1.
Low Dropout Linear Fixed Voltage Regulator V50 V33 Data Sheet Rev. 1.0, 2014-01-28 Automotive Power Table of Contents 1 Overview....................................................................... 3
TLF80511EJ. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33. Rev. 1.
Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33 Data Sheet Rev. 1.0, 2014-11-17 Automotive Power Table of Contents 1 Overview.......................................................................
Green Product (RoHS compliant) AEC Qualified
1 Green Product (RoHS compliant) AEC Qualified V DS E3180A G63-7-1 E3230 7 G202 PG-TO263-7-1 PG-TO220-7-12 Data Sheet 1 Rev.1.3, 2013-07-26 Drain source voltage V DS Drain-gate voltage R GS k V DGR Gate
Low-Drop Fixed Voltage Regulator TLE 4299
Low-Drop Fixed Voltage Regulator Features Output voltage 3.3V ± 2% 150 ma Output current Extreme low current consumption in ON state Inhibit function: Below 1 µa current consumption in off mode Early warning
DC Motor Driver for Servo Driver Applications
DC Motor Driver for Servo Driver Applications TLE 4209A 1 Overview 1.1 Features Optimized for headlight beam control applications Delivers up to 0.8 A Low saturation voltage; typ. 1.2 V total @ 25 C; 0.4
Data Sheet, Rev. 1.5, Sept TLE4209G. Automotive Power
Data Sheet, Rev. 1.5, Sept. 2018 Automotive Power Table of Contents Table of Contents 1 Overview....................................................................... 3 2 Block Diagram...................................................................
Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
single single single 150 C Operating temperature range T op Storage temperature T stg
Silicon PIN Diode Current-controlled RF resistor for switching and attenuating applications Frequency range MHz... 2 GHz Especially useful as antenna switch in TV-sat tuners Very low harmonics Pb-free
Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic
General Description. Smart Low Side Power Switch HITFET BTS 141TC. Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch
Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input
General Description. Smart Low Side Power Switch HITFET BTS 141
Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input
IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification
General Description. Smart Low Side Power Switch HITFET BTS 117
Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS 42 V Onstate resistance R DS(on) m Nominal
Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads
Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling
BFS483. Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor
BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw
Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23
Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree
Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 0 ma to 70 ma Pbfree (RoHS compliant)
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
HITFET BTS 7N Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS V Onstate resistance R DS(on)
Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223
BCP...BCP... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP4... BCP6 (NPN) Pbfree (RoHS compliant) package
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain
BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R
Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due
Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E
BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
OptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
TLE Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLE42754D TLE42754G TLE42754E. Rev. 1.
Low Dropout Linear Fixed Voltage Regulator TLE42754D TLE42754G TLE42754E Data Sheet Rev. 1.11, 2012-01-20 Automotive Power Low Dropout Linear Fixed Voltage Regulator TLE42754 1 Overview Features Output
3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
OptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package ) Qualified
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,
IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For lowdistortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 70 ma to 30 ma Power amplifiers for DECT and
OptiMOS Small-Signal-Transistor
2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified
OptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
Data Sheet, Rev. 4.0, April 2008 TLE6250. High Speed CAN-Transceiver. Automotive Power
Data Sheet, Rev. 4.0, April 2008 TLE6250 High Speed CAN-Transceiver Automotive Power Edition 2008-04-28 Published by Infineon Technologies AG 81726 Munich, Germany 2004 Infineon Technologies AG All Rights
This chip is used for: power modules. Applications: drives G. Mechanical Parameters Raster size 9.47 x 12.08
IGBT3 Power Chip Features: 1700V Trench + Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling This chip is used for: power modules
OptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
OptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
Type Package Configuration Marking BAS28 BAS28W
Silicon Switching Diode For highspeed switching applications Electrical insulated diodes Pbfree (RoHS compliant) package ) Qualified according EC Q /W "!,, Type Package Configuration Marking W SOT SOT
OptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
OptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R
Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due
OptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
OptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS
Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS(on),max (SMD version) 3. mω Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 1 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
OptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
OptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
CoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
single common cathode common cathode
Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance