HITFET HITFET - BTS3046SDR. Datasheet. Automotive Power. Smart Low Side Power Switch

Transcription

1 HITFET Smar Low Side Power Swich HITFET - BTS3046SDR 46 mohm single channel smar low side power swich for 12V & 24V Applicaion Daashee Rev. 1.0, Auomoive Power

2 1 Overview Block Diagram Terms Pin Configuraion Pin Assignmen BTS3046SDR Pin Definiions and Funcions General Produc Characerisics Absolue Maximum Raings Funcional Range Thermal Resisance Transien Thermal Impedance Inpu and Power Sage Inpu Circui Failure Feedback Power sage Oupu On-sae Resisance Oupu Timing Characerisics Proecion Funcions Thermal Proecion Overvolage Proecion Shor Circui Proecion Characerisics Package Oulines BTS3046SDR Revision Hisory Daashee 2 Rev. 1.0,

3 BTS3046SDR 1 Overview Feaures Shor circui and over load proecion Thermal shudown wih resar behavior ESD proecion Over volage proecion Logic level inpu suiable for 5V and 3.3V Analog driving possible 12V and 24V usabiliy Green Produc (RoHS complian) AEC Qualified PG-TO Descripion The BTS3046SDR is a single channel low-side MOSFET power swich in PG-TO package providing embedded proecive funcions. The device is monolihically inegraed wih a N channel verical power FET and embedded proecion funcions. The BTS3046SDR is auomoive qualified and can be used in 12V and 24V auomoive and indusrial applicaions. Table 1 Produc Summary Drain volage 1) Maximum Inpu Volage V IN 10 V Maximum On-Sae resisance a 150 C a 5V inpu volage R DS(ON) 134 mω Typical On-Sae resisance a 25 C and 10V inpu volage R DS(ON) 46 mω Nominal load curren I D(nom) 3.6 A Minimum curren limiaion level I D(lim) 10 A 1) Acive clamped V D 60 V Type Package Marking BTS3046SDR PG-TO Daashee 3 Rev. 1.0,

4 Overview Proecive Funcions Elecrosaic discharge proecion (ESD) Acive clamp over volage proecion Thermal shudown wih resar behavior Over load and Shor circui proecion Curren limiaion Analog Faul Informaion Thermal shudown Shor o Baery Overload Applicaions Designed for inducive and lamp loads in auomoive and indusrial applicaions. 12V and 24V applicaions All ypes of resisive, inducive and capaciive loads Replaces discree circuis Deailed Descripion The device is able o swich all kind of resisive, inducive and capaciive loads, limied by E AS and maximum curren capabiliies. The BTS3046SDR offers ESD proecion on he IN Pin which refers o he Source pin (Ground). The overemperaure proecion prevens he device from overheaing due o overload and/or bad cooling condiions. The emperaure informaion is given by a emperaure sensor in he power MOSFET. During hermal shudown he device sinks an increased inpu curren a he IN pin o feedback he faul condiion. The BTS3046SDR has a hermal-resar funcion. The device will urn on again, if inpu is sill high, afer he measured emperaure has dropped below he hermal hyseresis. The over volage proecion ges acivaed during load dump or inducive urn off condiions. The power MOSFET is limiing he drain-source volage, if i rises above he V DS(clamp). Daashee 4 Rev. 1.0,

5 Block Diagram 2 Block Diagram Drain IN Gae Driving Uni Overvolage Proecion Overemperaure Proecion ESD Proecion Overcurren limiaion Source BlockDiagram.emf Figure 1 Block Diagram 2.1 Terms Figure 2 shows all exernal erms used in his daa shee. V ba V ba Z L R IN I D I IN IN Drain V IN V D Source I Sourc e GND Terms.emf Figure 2 Naming of elecrical parameers Daashee 5 Rev. 1.0,

6 Pin Configuraion 3 Pin Configuraion 3.1 Pin Assignmen BTS3046SDR (op view ) 4 (Tab) Drain Figure 3 Pin Configuraion PG-TO Pin Definiions and Funcions Pin Symbol Funcion 1 IN Inpu and faul feedback 2,4 Drain Load connecion for power DMOS 3 Source Ground, Source of power DMOS Daashee 6 Rev. 1.0,

7 General Produc Characerisics 4 General Produc Characerisics 4.1 Absolue Maximum Raings Absolue Maximum Raings 1) T j = -40 C o +150 C; all volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Tes Condiions Min. Max. Volages Drain volage V D 60 V 2) V IN = 0 V, I D = 10 ma Drain volage for shor circui proecion V D(SC) 36 V V IN = 5 V Inpu Curren I IN self limied ma -0.2 V < V IN < 10 V -2 2 ma V IN < -0.2 V or V IN > 10 V Drain Curren I D 10 A 3) Energies Unclamped single pulse inducive energy single pulse E AS 140 mj I D(Sar) = 6.5A V ba = 24 V; T J(sar) = 150 C Temperaures Operaing emperaure T J C Sorage emperaure T STG C ESD Suscepibiliy ESD Resisiviy V ESD -2 2 kv HBM 4) 1) No subjec o producion es, specified by design. 2) Acive clamped. 3) Acive limied 4) ESD suscepibiliy, HBM according o EIA/JESD 22-A114, Pin Source conneced o Ground Noe: Sresses above he ones lised here may cause permanen damage o he device. Exposure o absolue maximum raing condiions for exended periods may affec device reliabiliy. Noe: Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion 4.2 Funcional Range Pos. Parameer Symbol Limi Values Uni Condiions Min. Max Inpu pin volage (device ON) V IN 2 10 V Drain volage V D V Daashee 7 Rev. 1.0,

8 General Produc Characerisics Pos. Parameer Symbol Limi Values Uni Condiions Min. Max Inpu pin curren consumpion I IN(ON) 30 µa normal operaion Inpu pin feedback curren I IN(lim) 400 µa faul indicaion Noe: Wihin he funcional range he IC operaes as described in he circui descripion. The elecrical characerisics are specified wihin he condiions given in he relaed elecrical characerisics able. 4.3 Thermal Resisance Noe: This hermal daa was generaed in accordance wih JEDEC JESD51 sandards. For more informaion, go o Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Juncion o Case R hjc 0.9 K/W 1) 2) Juncion o Ambien (2s2p) R hja(2s2p) 27 K/W Juncion o Ambien R hja(1s0p) 47 K/W (1s0p+600mm 2 Cu) 1) 3) 1) 4) 1) No subjec o producion es, specified by design 2) Specified R hjc value is simulaed a naural convecion on a cold plae seup (all pins are fixed o ambien emperaure). T a = 25 C. Device is loaded wih 1W power. 3) Specified R hja value is according o Jedec JESD51-2,-7 a naural convecion on FR4 2s2p board; The produc (Chip+Package) was simulaed on a 76.2 x x 1.5 mm board wih 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). T a = 25 C, Device is loaded wih 1W power. 4) Specified R hja value is according o Jedec JESD51-2,-3 a naural convecion on FR4 1s0p board; The produc (Chip+Package) was simulaed on a 76.2 x x 1.5 mm board wih addiional heaspreading copper area of 600mm 2 and 70 μm hickness. T a = 25 C, Device is loaded wih 1W power. Daashee 8 Rev. 1.0,

9 General Produc Characerisics Transien Thermal Impedance ZhJA [ K / W ] Zh_3046.emf Figure 4 Typical ransien hermal impedance Z hja = f( p ), T a = 25 C Value is according o Jedec JESD51-2,-7 a naural convecion on FR4 2s2p board; The produc (Chip+Package) was simulaed on a 76.2 x x 1.5 mm³ board wih 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipaing 1 W power.. 0 0, ,0001 0,001 0,01 0, p [ s ] Daashee 9 Rev. 1.0,

10 Inpu and Power Sage 5 Inpu and Power Sage 5.1 Inpu Circui Figure 5 shows he inpu circui of he BTS3046SDR. The Zener Diode Z D proecs he inpu circui agains ESD pulses. The inernal circuiry is powered via he inpu pin. During normal operaion he Inpu is conneced o he Gae of he power MOSFET. During faul condiion he device sinks he curren I IN(faul) o give he faul informaion back o he driving circui. The curren handling capabiliy of he driving circui does no influence he device behavior as long as he supply curren I IN is supplied. I IN IN I IS Logic Gae Faul condiion Z D I INf Source Inpu.emf Figure 5 Inpu Circui The following Figure shows he ypical inpu hreshold volage of BTS3046SDR. 2,00 1,75 1,50 V IN(h) [ V ] 1,25 1,00 0,75 0,50 0,25 0, T [ C] Vinh_3046.emf Figure 6 Typical Inpu Threshold Volage V inh = f(t J ); I D = 1.2mA, V D = V IN The following Figure shows he ypical ransfer characerisic of BTS3046SDR. Daashee 10 Rev. 1.0,

11 Inpu and Power Sage 20 ID [ A ] 10 0 Figure 7 Typical Transfer Characerisic I D = f(v IN ); V D = 13.5 V, T J(sar) = 25 C Failure Feedback During failure condiion he BTS3046SDR sinks he increased curren I IN(faul). 5.2 Power sage V IN [ V ] Oupu On-sae Resisance The on-sae resisance depends on he juncion emperaure T J and on he applied inpu volage. The following Figures show his dependencies for he ypical on-sae resisance R DS(on). Temperaure dependency of R DS(on) a 3 differen inpu volage condiions: ransferchar_3046.emf 0,10 RDS(on) [ Ω ] 0,05 yp. 0, T [ C ] Figure 8 Typical On-Sae Resisance, R DS(on) = f(t J ), V IN = 10 V rdson_10v_3046.emf Daashee 11 Rev. 1.0,

12 Inpu and Power Sage 0,15 RDS(on) [ Ω ] 0,10 0,05 yp. 0, T [ C ] Figure 9 Typical On-Sae Resisance, R DS(on) = f(t J ), V IN = 5 V rdson_5v_3046.emf 0,20 0,15 RDS(on) [ Ω ] 0,10 0,05 yp. 0, T [ C ] Figure 10 Typical On-Sae Resisance, R DS(on) = f(t J ), V IN = 3 V rdson_3v_3046.emf Daashee 12 Rev. 1.0,

13 Inpu and Power Sage Oupu Timing A volage signal a he inpu pin above he hreshold volage causes he power MOSFET o swich on. Figure 11 shows he iming definiion. IN [V] 10.0 on off 0 I D [A] I load 90 % 10 % V D [V] V bb 70 % 50 % Figure 11 dv ds /d on Definiion of Power Oupu Timing for Resisive Load dv ds /d off Swiching.emf Daashee 13 Rev. 1.0,

14 Inpu and Power Sage 5.3 Characerisics Noe: Characerisics show he deviaion of parameer a given inpu volage and juncion emperaure. Typical values show he ypical parameers expeced from manufacuring. All volages wih respec o Source Pin unless oherwise saed. Elecrical Characerisics: Inpu and Power Sage T j = -40 C o +150 C, V ba = 8.0 V o 36V, all volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Tes Condiions Min. Typ. Max. Inpu Supply curren from Inpu Pin I IN(nom) μa V D = 0 V; V IN = 10 V Inpu curren proecion mode I IN(lim) μa V IN = 10 V; T J = 150 C Inpu hreshold volage V IN(h) V V D = V IN ; I D = 1.2 ma Power Sage On-Sae Resisance R DS(on) 46 mω T J = 25 C; V IN = 10 V; I D = 5A mω T J = 150 C; V IN = 10 V; I D = 5A 54 mω T J = 25 C; V IN = 5 V; I D = 5A mω T J = 150 C; V IN = 5 V; I D = 5A 95 mω 1) T J = 25 C; V IN = 3 V; I D = 5A mω 1) T J = 150 C; V IN = 3 V; I D = 5A Nominal load curren I D(nom) A 1) T J < 150 C; T A = 105 C; V IN = 10 V; V DS = 0.5 V Zero inpu volage drain curren I DSS μa V D = 36 V; V IN = 0 V; T J =-40 C o 85 C 8 15 μa V D = 36 V; V IN = 0 V; T J =150 C Daashee 14 Rev. 1.0,

15 Inpu and Power Sage Elecrical Characerisics: Inpu and Power Sage (con d) T j = -40 C o +150 C, V ba = 8.0 V o 36V, all volages wih respec o ground, posiive curren flowing ino pin (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Tes Condiions Min. Typ. Max. Swiching (see Figure 11 for definiion deails) Turn-on ime on μs V bb =13.5V, R L =4.7 Ω T J =-40 C o 85 C T J =150 C μs 1) V bb =28V, R L =10 Ω Turn-off ime off μs V bb =13.5V, R L =4.7 Ω T J =-40 C o 85 C T J =150 C μs 1) V bb =28V, R L =10 Ω Slew rae on -dv ds /d on V/μs V bb =13.5V, R L =4.7 Ω ) V bb =28V, R L =10 Ω Slew rae off dv ds /d off V/μs V bb =13.5V, R L =4.7 Ω ) V bb =28V, R L =10 Ω Inverse Diode Inverse Diode forward volage V D,invered V I D =-15A V IN = 0 V 1) No subjec o producion es, calculaed by R hja and R DS(on). Daashee 15 Rev. 1.0,

16 Proecion Funcions 6 Proecion Funcions The device provides embedded proecion funcions. Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaion. 6.1 Thermal Proecion The device is proeced agains over emperaure due o overload and / or bad cooling condiions. To ensure his a emperaure sensor locaed in he Power MOSFET is used. The BTS3046SDR has a hermal-resar funcion. The device will urn on again, if inpu is sill high, afer he measured emperaure has dropped below he hermal hyseresis. The proecive swich off can be rese by seing he inpu pin volage o low. Then he inernal logic is no supplied anymore and he nex ime he volage on he IN pin rises above he inpu hreshold volage, he device will swich on, if he emperaure is no above he over emperaure hreshold. see Figure 12. Thermal shudown IN 5V 0 T J T JSD resar ΔT JSD I IN I IN(lim) I IN(nom) 0 Thermal_faul_auoresar. emf Figure 12 Error Signal via Inpu Curren a Thermal Shudown Daashee 16 Rev. 1.0,

17 Proecion Funcions 6.2 Overvolage Proecion When swiching off inducive loads wih low-side swiches, he Drain-Source volage V D rises above baery poenial, because he inducance inends o coninue driving he curren. Drain Source OupuClamp.emf Figure 13 Oupu Clamp The BTS3046SDR is equipped wih a volage clamp mechanism ha prevens he Drain-Source volage o rise above V D(Clamp). See Figure 13 and Figure 14 for more deails. IN 5V Turn off due o over emperaure or shor circui ID 0 V D VClamp Vba Figure 14 Swiching an Inducance InduciveLoad.emf While demagneizaion of inducive loads, energy has o be dissipaed in he BTS3046SDR. This energy can be calculaed by he following equaion: V ba V E V D(Clamp) R D(Clamp) L I L = ln V R L V ba D(Clamp) + I L L R L Following equaion simplifies under assumpion of R L = 0 V ba 1 2 E = --LI 2 L V V ba D(Clamp) Figure 16 shows he inducance / curren combinaion he BTS3046SDR can handle. Daashee 17 Rev. 1.0,

18 Proecion Funcions For maximum single avalanche energy please also refer o E AS value in Energies on Page 7 100,00 V ba = 24V Max. L [ mh ] 10,00 1,00 1 I D [ A ] 10 EAS_3046.emf Figure 15 Maximum load inducance for single pulse L=f (I L ), T j(sar) = 150 C, V ba = 24V 6.3 Shor Circui Proecion The condiion shor circui is an overload condiion of he device. If he curren reaches he limiaion value of I D(lim) he device limis he curren and sars heaing up. When he hermal shudown emperaure is reached, he device urns off. The ime from he beginning of curren limiaion unil he over emperaure swich off depends srongly on he cooling condiions. The device sinks higher curren on IN pin during he proecive swich off and swiches back ON afer he BTS3046SDR cools down below he emperaure hyseresis. Figure 16 shows his behavior. Daashee 18 Rev. 1.0,

19 Proecion Funcions Occurrence of Over curren or high ohmic Shor circui Turn off due o over emperaure Resar afer shor circui urn off Resar ino normal load condiion VIN 5V 0 ID V ba/zsc I D( lim ) TJ TJSD ΔTJSD IIN I IN(lim ) IIN(nom) Figure 16 0 Shor _circui.emf Shor circui proecion via curren limiaion and over emperaure swich off 6.4 Characerisics Noe: Characerisics show he deviaion of parameer a given inpu volage and juncion emperaure. Typical values show he ypical parameers expeced from manufacuring. Elecrical Characerisics: Proecion Funcions Unless oherwise specified: T j = -40 C o +150 C, V ba = 8.0 V o 36V Pos. Parameer Symbol Limi Values Uni Tes Condiions Min. Typ. Max. Thermal Proecion Thermal shu down juncion emperaure T JSD ) C Thermal hyseresis ΔT JSD 10 K 1) Overvolage Proecion Drain clamp volage V D(Clamp) V V IN = 0 V; I D = 10 ma Curren limiaion Curren limiaion I D(lim) A V IN = 10 V; V D = 13.5V; 1) No subjec o producion es, specified by design. measure = 200µs Daashee 19 Rev. 1.0,

20 Package Oulines BTS3046SDR 7 Package Oulines BTS3046SDR 9.98 ± ±0.1 (4.24) 0.15 MAX. per side A 5.4 ±0.1 (5) 0.8 ±0.15 3x ± M A B B MIN B All meal surfaces in plaed, excep area of cu. Figure 17 PG-TO (Plasic Dual Small Ouline Package) GPT09277 Green Produc (RoHS complian) To mee he world-wide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoHS-Complian (i.e Pb-free finish on leads and suiable for Pb-free soldering according o IPC/JEDEC J-STD-020). For furher informaion on alernaive packages, please visi our websie: hp:// Dimensions in mm Daashee 20 Rev. 1.0,

21 Revision Hisory 8 Revision Hisory Version Dae Changes Rev iniial released daa shee Daashee 21 Rev. 1.0,

22 Ediion Published by Infineon Technologies AG Munich, Germany 2009 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of non-infringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. Infineon Technologies componens may be used in life-suppor devices or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered.