SFH636. Pb Pb-free. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors

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1 Opocoupler, Phooransisor Oupu, Mbd, kv/ms CMR, Spli CollecorTransisor Oupu Feaures High Speed Opocoupler wihou Base Connecion Isolaion Tes Volage: 3 V RMS GaAlAs Emier Inegraed Deecor wih Phoo diode and Transisor High Daa Transmission Rae:. MBi/s TTL Compaible Open Collecor Oupu CTR a I F = ma, V O =.4 V, V CC = 4. V, T amb = C: 9 % i794 C A NC 3 4 V CC E C e3 Pb Pb-free Good CTR Lineariy Relaive o Forward Curren Low Coupling Capaciance dv/d: yp. kv/µs Lead-free componen Componen in accordance o RoHS /9/EC and WEEE /9/EC Agency Approvals UL77, File No. E744 Sysem Code H or J, Double Proecion DIN EN (VDE884) DIN EN pending Available wih Opion Applicaions IGBT Drivers Daa Communicaions Programmable Conrollers Descripion The is an opocoupler wih a GaAlAs infrared emiing diode, opically coupled o an inegraed phoo deecor consising of a phoo diode and a high speed ransisor in a DIP- plasic package. The device is funcionally similar o N3 excep here is no base connecion, and he elecrical foo prin is differen. Noise and dv/d performance is enhanced by no bringing ou he base connecion. Signals can be ransmied beween wo elecrically separaed circuis up o frequencies of. MHz. The poenial difference beween he circuis o be coupled should no exceed he maximum permissible reference Order Informaion Par Remarks CTR 9 %, DIP- -X CTR 9 %, DIP- 4 mil (opion ) -X7 CTR 9 %, SMD- (opion 7) -X9 CTR 9 %, SMD- (opion9) For addiional informaion on he available opions refer o Opion Informaion. Documen Number 838 Rev.., -Oc-4

2 Absolue Maximum Raings T amb = C, unless oherwise specified Sresses in excess of he absolue Maximum Raings can cause permanen damage o he device. Funcional operaion of he device is no implied a hese or any oher condiions in excess of hose given in he operaional secions of his documen. Exposure o absolue Maximum Raing for exended periods of he ime can adversely affec reliabiliy. Inpu Parameer Tes condiion Symbol Value Uni Reverse volage V R 3. V DC Forward curren I F ma Surge forward curren p. µs, 3 pulses/s I FSM. A Power dissipaion P diss 4 mw Oupu Parameer Tes condiion Symbol Value Uni Supply volage V S -. o 3 V Oupu volage V O -. o V Oupu curren I O 8. ma Power dissipaion P diss mw Coupler Parameer Tes condiion Symbol Value Uni Isolaion es volage (beween emier and deecor refer o climae DIN 44, par, Nov. 74) V ISO 3 V RMS Creepage 7. mm Clearance 7. mm Isolaion resisance V IO = V, T amb = C R IO Ω V IO = V, T amb = C R IO Ω Sorage emperaure range T sg - o + C Ambien emperaure range T amb - o + C Juncion emperaure T j C Soldering emperaure Dip soldering: disance o seaing plane. mm = s max. Dip soldering: disance o seaing plane. mm T sld C Documen Number 838 Rev.., -Oc-4

3 Elecrical Characerisics T amb = C, unless oherwise specified Minimum and maximum values are esing requiremens. Typical values are characerisics of he device and are he resul of engineering evaluaion. Typical values are for informaion only and are no par of he esing requiremens. Inpu Forward volage I F = ma V F..8 V Reverse curren V R = 3. V I R. µa Capaciance V R = V, f =. MHz C O pf Thermal resisance R hja 7 K/W Oupu Logic high supply curren I F = V, V O (open), V CC = V I CCH.. µa I F = V, V O (open), V CC = V I CCH.. µa Oupu curren, oupu high I F = V, V O (open), V CC =. V I OH.3. µa I F = V, V O (open), V CC = V I OH.. µa I OH µa Collecor-emier capaciance V CE =. V, f =. MHz C CE 3. pf Thermal resisance R hja 3 K/W Coupler Coupling capaciance C C. pf Collecor emier sauraion volage I F = ma, I O =.4 ma, V CC = 4. V V OL..4 V Supply curren, logic low I F = ma, V O open, V CC = V I DD 8 Vou I F C = nf V CC V Ω Pulse generaor Zo=Ω r, f =ns Duy cycle = % Period = µs 3 4 CL = pf R L V O IF PHL ma.v PLH isfh3_ isfh3_ Figure. Tes Se-up Figure. Swiching Time Measuremen Documen Number 838 Rev.., -Oc-4 3

4 Curren Transfer Raio Curren Transfer Raio I F = ma, V O =.4 V, I C /I F 9 3 % V CC = 4. V I F = ma, V O =. V, V CC = 4. V I C /I F % Swiching Characerisics Swiching Time Measuremen Propagaion delay ime (high-low) Propagaion delay ime (low-low) I F = ma, V CC =. V, R L =.9 kω I F = ma, V CC =. V, R L =.9 kω PHL.3.8 µs PLH.3.8 µs V CM B V CC isfh3_3 I F A 3 4 Pulse generaor common mode C = nf RL VCC V O 9% % VO V VO VOL isfh3_4 R % 9% F A: IF =ma A: IF =ma Figure 3. Common Mode Transien Tes Figure 4. Measuremen Waveform of CMR Common Mode Transien Immuniy Common mode ransien immuniy (high) Common mode ransien immuniy (low) I O =, V CM = V P-P, R L =.9 kω, V CC =. V I O = ma, V CM = V P-P, R L =.9 kω, V CC =. V CM H kv/µs CM L kv/µs 4 Documen Number 838 Rev.., -Oc-4

5 Typical Characerisics (Tamb = C unless oherwise specified) V CC =. V IF/mA isfh3_ isfh3_8 VF/V Figure. Oupu Characerisics-Oupu Curren vs. Oupu Volage Figure 8. Forward Curren of Emiing Diode vs. Forward Volage V CC =. V isfh3_ Figure. Permissible Forward Curren of Emiing Diode vs. Ambien Temperaure isfh3_9 Figure 9. Small Signal Transfer Raio vs. Forward Curren I F =ma, V O =.4 V, V CC =. V, isfh3_7 isfh3_ Figure 7. Permissible Toal Power Dissipaion vs. Ambien Temperaure Figure. Curren Transfer Raio (normalized) vs. Ambien Temperaure Documen Number 838 Rev.., -Oc-4

6 VO =VCC =. V, IF = isfh3_ Figure. Oupu Curren (high) Vs. Ambien Temperaure IF= ma, V CC =. V, R L =4. kω, : RL=.9 kω N 3 N 3 isfh3_ Figure. Delay Times vs. Ambien Temperaure I F = ma, V O =.4 V, V CC =. V N 3 N 3 isfh3_3 Figure 3. Curren Transfer Raio (normalized) vs. Forward Curren Documen Number 838 Rev.., -Oc-4

7 Package Dimensions in Inches (mm) 3 pin one ID.48 (.3). (.) 4 ISO Mehod A.39 (.) Min. 4 yp..8 (.4). (.).33 (8.).343 (8.7).48 (.4). (.).3 (3.3). (3.8).3 (.8) min..3 (.8).3 (.9). (.4) yp (7.) yp. 8. (.) yp (7. 8.8).4 (.9).3 (3.) i784 Opion Opion 7 Opion 9.47 (.3).39 (9.9).37 (7.8).9 (7.4).4 (.3). (.).4 (.).43 (.9).8 (.7) MIN..3 (7.) TYP..3 (8.) MIN..33 (8.4) MIN..4 (.3) MAX..8 (4.). (4.).4 (.).98 (.49).37 (9.3).39 (.3).3 (7.) ref.. (.).4 (.).3 (8.) min.. (.3) yp. max. 84 Documen Number 838 Rev.., -Oc-4 7

8 Ozone Depleing Subsances Policy Saemen I is he policy of Vishay Semiconducor GmbH o. Mee all presen and fuure naional and inernaional sauory requiremens.. Regularly and coninuously improve he performance of our producs, processes, disribuion and operaingsysems wih respec o heir impac on he healh and safey of our employees and he public, as well as heir impac on he environmen. I is paricular concern o conrol or eliminae releases of hose subsances ino he amosphere which are known as ozone depleing subsances (ODSs). The Monreal Proocol (987) and is London Amendmens (99) inend o severely resric he use of ODSs and forbid heir use wihin he nex en years. Various naional and inernaional iniiaives are pressing for an earlier ban on hese subsances. Vishay Semiconducor GmbH has been able o use is policy of coninuous improvemens o eliminae he use of ODSs lised in he following documens.. Annex A, B and lis of ransiional subsances of he Monreal Proocol and he London Amendmens respecively. Class I and II ozone depleing subsances in he Clean Air Ac Amendmens of 99 by he Environmenal Proecion Agency (EPA) in he USA 3. Council Decision 88/4/EEC and 9/9/EEC Annex A, B and C (ransiional subsances) respecively. Vishay Semiconducor GmbH can cerify ha our semiconducors are no manufacured wih ozone depleing subsances and do no conain such subsances. We reserve he righ o make changes o improve echnical design and may do so wihou furher noice. Parameers can vary in differen applicaions. All operaing parameers mus be validaed for each cusomer applicaion by he cusomer. Should he buyer use producs for any uninended or unauhorized applicaion, he buyer shall indemnify agains all claims, coss, damages, and expenses, arising ou of, direcly or indirecly, any claim of personal damage, injury or deah associaed wih such uninended or unauhorized use. Vishay Semiconducor GmbH, P.O.B. 33, D-74 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Documen Number 838 Rev.., -Oc-4

SFH636. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors.

SFH636. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors. Opocoupler, Phooransisor Oupu, Mbd, kv/ms CMR, Spli CollecorTransisor Oupu Feaures High Speed Opocoupler wihou Base Connecion Isolaion Tes Volage: 3 V RMS GaAlAs Emier Inegraed Deecor wih Phoo diode and