MC74HC595A. 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs. High Performance Silicon Gate CMOS
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1 8-Bi Serial-Inpu/Serial or Parallel-Oupu Shif Regiser wih Lached 3-Sae Oupus High Performance Silicon Gae COS The C74HC55A consiss of an 8 bi shif regiser and an 8 bi D ype lach wih hree sae parallel oupus. The shif regiser acceps serial daa and provides a serial oupu. The shif regiser also provides parallel daa o he 8 bi lach. The shif regiser and lach have independen clock inpus. This device also has an asynchronous rese for he shif regiser. The HC55A direcly inerfaces wih he SPI serial daa por on COS PUs and CUs. Feaures Oupu Drive Capabiliy: 5 LSTTL Loads Oupus Direcly Inerface o COS, NOS, and TTL Operaing olage Range: 2.0 o Low Inpu Curren:.0 A High Noise Immuniy Characerisic of COS Devices In Compliance wih he Requiremens Defined by JEDEC Sandard No. 7A Chip Complexiy: 328 FETs or 82 Equivalen Gaes Improvemens over HC55 Improved Propagaion Delays 50% Lower Quiescen Power Improved Inpu Noise and Lachup Immuniy Pb Free Packages are Available* PDIP N SUFFIX CASE 648 SOIC D SUFFIX CASE 75B TSSOP DT SUFFIX CASE 48F ARKING DIAGRAS A = Assembly Locaion WL, L = Wafer Lo YY, Y = Year WW, W = Work Week G, = Pb Free Package (Noe: icrodo may be in eiher locaion) C74HC55AN AWLYYWWG HC55AG AWLYWW HC 55A ALYW ORDERING INFORATION See deailed ordering and shipping informaion in he package dimensions secion on page 2 of his daa shee. *For addiional informaion on our Pb Free sraegy and soldering deails, please download he ON Semiconducor Soldering and ouning Techniques Reference anual, SOLDERR/D. Semiconducor Componens Indusries, LLC, 2008 Publicaion Order Number: C74HC55A/D
2 PIN ASSIGNENT Q B CC Q C 2 5 Q A Q D 3 4 A Q E 4 3 OUTPUT ENABLE Q F 5 2 LATCH CLOCK SERIAL DATA INPUT A 4 SHIFT REGISTER LOGIC DIAGRA LATCH 5 Q A Q B 2 Q C 3 Q D 4 Q E 5 Q F 6 Q G 7 Q H PARALLEL DATA OUTPUTS Q G Q H GND SHIFT CLOCK RESET SQ H SHIFT CLOCK RESET LATCH CLOCK OUTPUT ENABLE SQ H CC = PIN GND = PIN 8 SERIAL DATA OUTPUT ORDERING INFORATION Device Package Shipping C74HC55AN PDIP 500 Unis / Rail C74HC55ANG PDIP 500 Unis / Rail C74HC55AD SOIC 48 Unis / Rail C74HC55ADG SOIC 48 Unis / Rail C74HC55ADR2 SOIC 2500 Tape & Reel C74HC55ADR2G SOIC 2500 Tape & Reel C74HC55ADT TSSOP * 6 Unis / Rail C74HC55ADTR2 TSSOP * 2500 Tape & Reel C74HC55ADTR2G TSSOP * 2500 Tape & Reel C74HC55AFEL SOEIAJ 2000 Tape & Reel C74HC55AFELG SOEIAJ 2000 Tape & Reel For informaion on ape and reel specificaions, including par orienaion and ape sizes, please refer o our Tape and Reel Packaging Specificaions Brochure, BRD80/D. *This package is inherenly Pb Free. 2
3 AXIU RATINGS Symbol Parameer alue Uni Î CC DC Supply olage (Referenced o GND) 0.5 o Î in DC Inpu olage (Referenced o GND) 0.5 o CC Î ou DC Oupu olage (Referenced o GND) 0.5 o CC Î I in DC Inpu Curren, per Pin ± 20 ma Î I ou DC Oupu Curren, per Pin ± 35 ma Î I CC DC Supply Curren, CC and GND Pins ± 75 ma Î P D Power Dissipaion in Sill Air, Plasic DIP 750 mw SOIC Package 500 TSSOP Package 450 Î T sg Sorage Temperaure 65 o + 50 C Î T L Lead Temperaure, mm from Case for 0 Seconds Î (Plasic DIP, SOIC or TSSOP Package) 260 C Sresses exceeding aximum Raings may damage he device. aximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiions is no implied. Exended exposure o sresses above he Recommended Operaing Condiions may affec device reliabiliy. Deraing Plasic DIP: 0 mw/ C from 65 o 25 C SOIC Package: 7 mw/ C from 65 o 25 C TSSOP Package: 6. mw/ C from 65 o 25 C For high frequency or heavy load consideraions, see Chaper 2 of he ON Semiconducor High Speed COS Daa Book (DL2/D). RECOENDED OPERATING CONDITIONS Î Î Symbol Parameer in ax Uni Î CC DC Supply olage (Referenced o GND) Î 2.0 Î in, ou DC Inpu olage, Oupu olage (Referenced o GND) 0 CC Î T A Operaing Temperaure, All Package Types 55 Î + 25 C Î r, f Inpu Rise and Fall Time CC = Î 000 ns (Figure ) CC = Î CC = 0 This device conains proecion circuiry o guard agains damage due o high saic volages or elecric fields. However, precauions mus be aken o avoid applicaions of any volage higher han maximum raed volages o his high impedance circui. For proper operaion, in and ou should be consrained o he range GND ( in or ou ) CC. Unused inpus mus always be ied o an appropriae logic volage level (e.g., eiher GND or CC ). Unused oupus mus be lef open. DC ELECTRICAL CHARACTERISTICS (olages Referenced o GND) Î CC Î Guaraneed Limi Symbol Parameer Tes Condiions 55 o 25 C 85 C 25 C Uni Î IH inimum High Level Inpu olage ou = 0. or CC I ou 20 A Î Î Î Î IL aximum Low Level Inpu olage ou = 0. or CC I ou 20 A Î Î Î Î OH inimum High Level Oupu olage, Q A Q H in = IH or IL I ou 20 A Î Î 5. Î in = IH or IL I ou 2.4 ma Î I ou I ou 7.8 ma 5.48 Î
4 DC ELECTRICAL CHARACTERISTICS (olages Referenced o GND) Î CC Î Guaraneed Limi Î Symbol Parameer Tes Condiions 55 o 25 CÎ 85 C 25 C Uni Î OL aximum Low Level Oupu olage, Q A Q H in = IH or IL I ou 20 A Î 0. Î in = IH or IL I ou 2.4 ma I ou ma I ou Î Î 7.8 ma Î OH inimum High Level Oupu in = IH or IL olage, SQ H II ou I 20 A Î in = IH or IL I ou II ou I 4.0 ma Î II ou I 5.2 ma 5.48 Î Î OL aximum Low Level Oupu in = IH or IL Î olage, SQ H II ou I 20 A Î in = IH or IL I ou 2.4 maî II ou I 4.0 ma II ou Î Î I 5.2 ma Î I in aximum Inpu Leakage in = CC or GND Curren ± 0. ±.0 ±.0 A Î I OZ aximum Three Sae Oupu in High Impedance Sae ± 0.5 Î ± 5.0 ± 0 A Leakage Curren, Q A Q H in = IL or IH ou = CC or GND Î I CC aximum Quiescen Supply in = CC or GND Î Curren (per Package) l ou = 0 A 4.0 Î 40 Î 0 A NOTE: Informaion on ypical parameric values can be found in Chaper 2 of he ON Semiconducor High Speed COS Daa Book (DL2/D). AC ELECTRICAL CHARACTERISTICS (C L = 50 pf, Inpu r = f = ns) Î CC Î Guaraneed Limi Symbol Parameer 55 o 25 C 85 C 25 C Uni f Î max aximum Clock Frequency (50% Duy Cycle) Hz (Figures and 7) Î Î PLH, aximum Propagaion Delay, Shif Clock o SQ H ns Î PHL (Figures and 7) Î Î PHL aximum Propagaion Delay, Rese o SQ H ns (Figures 2 and 7) Î Î PLH, aximum Propagaion Delay, Lach Clock o Q A Q H ns Î PHL (Figures 3 and 7) Î Î PLZ, aximum Propagaion Delay, Oupu Enable o Q PHZ A Q H ns (Figures 4 and 8) Î Î Î PZL, aximum Propagaion Delay, Oupu Enable o Q PZH A Q H ns (Figures 4 and 8)
5 AC ELECTRICAL CHARACTERISTICS (C L = 50 pf, Inpu r = f = ns) Î Î Guaraneed Limi CC Î Symbol Parameer 55 o 25 C 85 C 25 C Uni Î TLH, aximum Oupu Transiion Time, Q THL A Q H ns (Figures 3 and 7) Î Î TLH, aximum Oupu Transiion Time, SQ THL H ns (Figures and 7) Î C in aximum Inpu Capaciance pf aximum Three Sae Oupu Capaciance (Oupu in pf C ou High Impedance Sae), Q A Q H NOTE: For propagaion delays wih loads oher han 50 pf, and informaion on ypical parameric values, see Chaper 2 of he ON Semiconducor High Speed COS Daa Book (DL2/D). 25 C, CC = 5.0 C PD Power Dissipaion Capaciance (Per Package)* 300 pf * Used o deermine he no load dynamic power consumpion: P D = C PD 2 CC f + I CC CC. For load consideraions, see Chaper 2 of he ON Semiconducor High Speed COS Daa Book (DL2/D). TIING REQUIREENTS (Inpu r = f = ns) Guaraneed Limi Î CC Symbol Parameer 25 C o 55 C 85 C 25 C Uni Î su inimum Seup Time, Serial Daa Inpu A o Shif Clock ns (Figure 5) Î.0 3 Î su inimum Seup Time, Shif Clock o Lach Clock ns (Figure 6) Î 3 Î h inimum Hold Time, Shif Clock o Serial Daa Inpu A ns (Figure 5) Î Î rec inimum Recovery Time, Rese Inacive o Shif Clock ns (Figure 2) Î.0 3 Î w inimum Pulse Widh, Rese ns (Figure 2) Î Î Î w inimum Pulse Widh, Shif Clock ns (Figure ) Î Î Î w inimum Pulse Widh, Lach Clock ns (Figure 6) Î Î r, f aximum Inpu Rise and Fall Times ns (Figure ) Î
6 PACKAGE DIENSIONS H A 8 G F B S C K SEATING T PLANE D PL 0.25 (0.00) T A PDIP N SUFFIX CASE ISSUE T J L SOIC D SUFFIX CASE 75B 05 ISSUE J NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y4.5, CONTROLLING DIENSION: INCH. 3. DIENSION L TO CENTER OF LEADS WHEN FORED PARALLEL. 4. DIENSION B DOES NOT INCLUDE OLD FLASH. 5. ROUNDED CORNERS OPTIONAL. INCHES ILLIETERS DI IN AX IN AX A B C D F G 0.00 BSC 2.54 BSC H BSC.27 BSC J K L S T SEATING PLANE 8 G A D PL 0.25 (0.00) T B S A S K B C P 8 PL 0.25 (0.00) B R X 45 SOLDERING FOOTPRINT 8X 6.40 X.2 J F NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y4.5, CONTROLLING DIENSION: ILLIETER. 3. DIENSIONS A AND B DO NOT INCLUDE OLD PROTRUSION. 4. AXIU OLD PROTRUSION 0.5 (0.006) PER SIDE. 5. DIENSION D DOES NOT INCLUDE DABAR PROTRUSION. ALLOWABLE DABAR PROTRUSION SHALL BE 0.27 (0.005) TOTAL IN EXCESS OF THE D DIENSION AT AXIU ATERIAL CONDITION. DI A B C D F G J K P R ILLIETERS IN AX INCHES IN AX BSC BSC X PITCH 8 DIENSIONS: ILLIETERS 0
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More informationDisribued by: www.jameco.com -800-83-44 The conen and copyrighs of he aached maerial are he propery of is owner. Preferred Device Schoky Barrier Diodes These Schoky barrier diodes are designed for high
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