MC74HC573A. Octal 3-State Noninverting Transparent Latch. High Performance Silicon Gate CMOS
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1 Ocal 3-Sae Noninvering Traparen Lach High Performance Silicon Gae COS The C74HC573 is idenical in pinou o he LS573. The devices are compaible wih sandard COS oupus; wih pullup resisors, hey are compaible wih LSTTL oupus. These laches appear raparen o daa (i.e., he oupus change asynchronously) when Lach Enable is high. When Lach Enable goes low, daa meeing he seup and hold ime becomes lached. The HC573 is idenical in funcion o he HC373 bu has he daa inpus on he opposie side of he package from he oupus o faciliae PC board layou. Feaures Oupu Drive Capabiliy: 5 LSTTL Loads Oupus Direcly Inerface o COS, NOS and TTL Operaing olage Range: 2.0 o 6.0 Low Inpu Curren:.0 In Compliance wih he JEDEC Sandard No. 7.0 Requireme Chip Complexiy: 28 FETs or 54.5 Equivalen Gaes Pb Free Packages are vailable* PDIP N SUFFIX CSE 738 SOIC DW SUFFIX CSE 75D RKING DIGRS C74HC573N WLYYWWG 74HC573 WLYYWWG TSSOP DT SUFFIX CSE 948E HC 573 LYW SOEIJ F SUFFIX CSE HC573 WLYWWG = ssembly Locaion WL, L = Wafer Lo YY, Y = Year WW, W = Work Week G = Pb Free Package = Pb Free Package (Noe: icrodo may be in eiher locaion) ORDERING INFORTION See deailed ordering and shipping informaion in he package dimeio secion on page 2 of his daa shee. *For addiional informaion on our Pb Free sraegy and soldering deails, please download he ON Semiconducor Soldering and ouning Techniques Reference anual, SOLDERR/D. Semiconducor Compone Indusries, LLC, 09 Publicaion Order Number: C74HC573/D
2 PIN SSIGNENT OUTPUT ENLE D0 2 D 3 D2 4 D3 5 D4 6 D5 7 D CC Q0 Q Q2 Q3 Q4 Q5 Q6 Design Crieria alue Unis Inernal Gae Coun* 54.5 ea. Inernal Gae Progaion Delay.5 Inernal Gae Power Dissipaion W Speed Power Produc pj *Equivalen o a wo inpu NND gae. D7 GND Q7 LTCH ENLE LOGIC DIGR FUNCTION TLE Inpus Oupu Oupu Lach Enable Enable D Q L H H H L H L L L L X No Change H X X Z X = Don Care Z = High Impedance DT INPUTS D0 D D2 D3 D4 D5 D6 D7 LTCH ENLE OUTPUT ENLE 2 9 Q0 3 8 Q 4 7 Q2 5 6 Q3 6 5 Q4 7 4 Q5 8 3 Q6 9 2 Q7 PIN = CC PIN 0 = GND NONINERTING OUTPUTS ORDERING INFORTION Device Package Shipping C74HC573N PDIP 8 Unis / Rail C74HC573NG SOIC 8 Unis / Rail C74HC573DW SOIC WIDE 38 Unis / Rail C74HC573DWG SOIC WIDE 38 Unis / Rail C74HC573DWR2 SOIC WIDE 000 Tape & Reel C74HC573DWR2G SOIC WIDE 000 Tape & Reel C74HC573DT TSSOP * 75 Unis / Rail C74HC573DTG TSSOP * 75 Unis / Rail C74HC573DTR2 TSSOP * 2 Tape & Reel C74HC573DTR2G TSSOP * 2 Tape & Reel C74HC573FEL SOEIJ 00 Tape & Reel C74HC573FELG SOEIJ 00 Tape & Reel For informaion on ape and reel specificaio, including par orienaion and ape sizes, please refer o our Tape and Reel Packaging Specificaio rochure, RD80/D. *This package is inherenly Pb Free. 2
3 Î XIU RTINGS Parameer Î alue Î Uni CC DC Supply olage (Referenced o GND) Î 0.5 o Î in DC Inpu olage (Referenced o GND) 0.5 o CC Î Î ou DC Oupu olage (Referenced o GND) 0.5 o CC I in DC Inpu Curren, per Pin ± m I ou DC Oupu Curren, per Pin Î ± 35 Î m I CC DC Supply Curren, CC and GND Pi Î ± 75 Î m P D Power Dissipaion in Sill ir, Plasic DIP Î 750 Î mw SOIC Package Î TSSOP Package Î 450 Î T sg Sorage Temperaure Î 65 o + 50Î C T L Lead Temperaure, mm from Case for 0 Seconds Î C Î (Plasic DIP, TSSOP or SOIC Package) 260 Sresses exceeding aximum Raings may damage he device. aximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiio is no implied. Exended exposure o sresses above he Recommended Operaing Condiio may affec device reliabiliy. Deraing Plasic DIP: 0 mw/ C from 65 o 25 C SOIC Package: 7 mw/ C from 65 o 25 C TSSOP Package: 6. mw/ C from 65 o 25 C For high frequency or heavy load coideraio, see Chaper 2 of he ON Semiconducor High Speed COS Daa ook (DL29/D). RECOENDED OPERTING CONDITIONS Parameer Î in Î ax Î Uni CC DC Supply olage (Referenced o GND) Î 2.0 Î 6.0 Î in, ou DC Inpu olage, Oupu olage (Referenced o GND) Î 0 Î CC Î T Operaing Temperaure, ll Package Types Î 55 Î + 25 Î C r, f Inpu Rise and Fall Time CC = (Figure ) CC Î Î Î = CC = Î DC ELECTRICL CHRCTERISTICS (olages Referenced o GND) This device conai proecion circuiry o guard agai damage due o high saic volages or elecric fields. However, precauio mus be aken o avoid applicaio of any volage higher han maximum raed volages o his high impedance circui. For proper operaion, in and ou should be corained o he range GND ( in or ou ) CC. Unused inpus mus always be ied o an appropriae logic volage level (e.g., eiher GND or CC ). Unused oupus mus be lef open. Guaraneed Limi Î CC 55 o Parameer Tes Condiio 25 C 85 C 25 C Uni IH inimum High Level Inpu olage Î ou = 0. or CC 0. Î I Î ou Î Î IL aximum Low Level Inpu olage Î ou = 0. or CC I ou Î 3.0 Î OH inimum High Level Oupu Î in = IH or IL Î olage Î I ou Î Î in = IH or IL I ou 2.4m Î I ou 6.0 m I ou Î m OL aximum Low Level Oupu Î ou = 0. or CC 0. Î olage Î I ou Î Î in = IH or IL I ou 2.4m Î I ou 6.0 m I ou Î m I in aximum Inpu Leakage Curren Î in = CC or GND 6.0 ± 0. ±.0 ±.0 I OZ aximum Three Sae Leakage Î Oupu in High Impedance SaeÎ Curren Î in = IL or IH ou = CC or GND Î Î I CC aximum Quiescen Supply Î in = CC or GND Î Curren (per Package) II ou I = 0 NOTE: Informaion on ypical parameric values can be found in Chaper 2 of he ON Semiconducor High Speed COS Daa ook (DL29/D). 3
4 C ELECTRICL CHRCTERISTICS (C L = 50 pf, Inpu r = f = 6.0 ) CC Î Guaraneed Limi Parameer 55 o 25 C 85 C 25 C Uni Î PLH, aximum Propagaion Delay, Inpu D o Q PHL Î (Figures and 5) Î 3.0Î Î PLH, aximum Propagaion Delay, Lach Enable o Q PHL Î (Figures 2 and 5) Î 3.0Î Î PLZ, Î aximum Propagaion Delay, Oupu Enable o Q Î 2.0Î PHZ (Figures 3 and 6) Î PZL, Î aximum Propagaion Delay, Oupu Enable o Q Î 2.0Î PZH (Figures 3 and 6) Î 4.5Î Î TLH, aximum Oupu Traiion Time, ny Oupu THL (Figures and 5) Î Î C in aximum Inpu Capaciance pf Î C ou aximum 3 Sae Oupu Capaciance (Oupu in High Impedance Sae) NOTE: For propagaion delays wih loads oher han 50 pf, and informaion on ypical parameric values, see Chaper 2 of he ON Semiconducor High Speed COS Daa ook (DL29/D). C PD Power Dissipaion Capaciance (Per Enabled Oupu)* 23 pf * Used o deermine he no load dynamic power coumpion: P D = C PD 2 CC f + I CC CC. For load coideraio, see Chaper 2 of he ON Semiconducor High Speed COS Daa ook (DL29/D) C, CC = Î TIING REQUIREENTS (C L = 50 pf, Inpu r = f = 6.0 ) Guaraneed Limi CC Î 55 o 25 C Î 85 C Î 25 C Parameer Figure in ax in ax in ax Î Uni su inimum Seup Time, Inpu D o Lach Enable Î 0 Î Î 3 Î Î Î h inimum Hold Time, Lach Enable o Inpu D Î 3.0 Î Î Î Î Î 4.5 Î Î Î Î Î 6.0 Î w inimum Pulse Widh, Lach Enable Î 3.0 Î 60 Î Î 80 Î Î Î 5 Î Î 9 Î Î Î r, f aximum Inpu Rise and Fall Times Î 3.0 Î Î 800 Î Î 800 Î Î Î 6.0 pf 4
5 PCKGE DIENSIONS PDIP N SUFFIX CSE ISSUE E T SETING PLNE G E F 0 D PL N K C 0.25 (0.00) T L J PL 0.25 (0.00) T NOTES:. DIENSIONING ND TOLERNCING PER NSI Y4.5, CONTROLLING DIENSION: INCH. 3. DIENSION L TO CENTER OF LED WHEN FORED PRLLEL. 4. DIENSION DOES NOT INCLUDE OLD FLSH. INCHES ILLIETERS DI IN X IN X C D E SC.27 SC F G 0.00 SC 2.54 SC J K L SC 7.62 SC N SOIC DW SUFFIX CSE 75D 05 ISSUE G H 0X 0.25 D E h X 45 NOTES:. DIENSIONS RE IN ILLIETERS. 2. INTERPRET DIENSIONS ND TOLERNCES PER SE Y4.5, DIENSIONS D ND E DO NOT INCLUDE OLD PROTRUSION. 4. XIU OLD PROTRUSION 0.5 PER SIDE. 5. DIENSION DOES NOT INCLUDE DR PROTRUSION. LLOWLE PROTRUSION SHLL E 0.3 TOTL IN EXCESS OF DIENSION T XIU TERIL CONDITION. X 0.25 T S 8X e 0 S T SETING PLNE C L ILLIETERS DI IN X C D E e.27 SC H h L
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