High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output

Size: px

Start display at page:

Download "High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output"

Amanda Carson
5 years ago
Views:

1 Vishay Semiconducors High Speed Opocoupler, FEATURES Isolaion es volages: 3 V RMS TTL compaible High bi raes:. Mbi/s i798 DESCRIPTION NC A C NC The N3 and N3 are opocouplers wih a GaAIAs infrared emiing diode, opically coupled wih an inegraed phoo deecor which consiss of a phoo diode and a high-speed ransisor in a DIP-8 plasic package. Signals can be ransmied beween wo elecrically separaed circuis up o frequencies of. MHz. The poenial difference beween he circuis o be coupled should no exceed he maximum permissible reference volages C(V CC) B(V B) C(V O) E(GND) High common-mode inerference immuniy Bandwidh. MHz Open-collecor oupu Exernal base wiring possible Lead (Pb)-free componen Componen in accordance o RoHS /9/EC and WEEE /9/EC AGENCY APPROVALS UL77, file no. E7 sysem code H or J, double proecion DIN EN 77-- (VDE 88) available wih opion CSA 937 ORDER INFORMATION PART REMARKS N3 CTR 7 %, DIP-8 N3 CTR 9 %, DIP-8 N3-X7 CTR 7 %, SMD-8 (opion 7) N3-X CTR 9 %, DIP-8 mil (opion ) N3-X7 CTR 9 %, SMD-8 (opion 7) N3-X9 CTR 9 %, SMD-8 (opion 9) Noe For addiional informaion on he available opions refer o opion informaion. ABSOLUTE MAXIMUM RATINGS () PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse volage V R V Forward curren ma Peak forward curren = ms, duy cycle % SM ma Maximum surge forward curren µs, 3 pulses/s A Thermal resisance R h 7 K/W Power dissipaion T amb = 7 C P diss mw OUTPUT Supply volage V S -. o V Oupu volage V O -. o V Emier base volage V EBO V Oupu curren I O 8 ma Maximum oupu curren ma Base curren I B ma Thermal resisance 3 K/W Power dissipaion T amb = 7 C P diss mw For echnical quesions, conac: opocoupler.answers@vishay.com Documen Number: 83 8 Rev.., -Dec-8

2 Vishay Semiconducors High Speed Opocoupler, ABSOLUTE MAXIMUM RATINGS () PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolaion es volage beween emier and deecor =. s V ISO 3 V RMS Polluion degree (DIN VDE 9) Isolaion resisance V IO = V, T amb = C R IO Ω V IO = V, T amb = C R IO Ω Sorage emperaure range T sg - o + C Ambien emperaure range T amb - o + C Soldering emperaure () max. s, dip soldering. mm from case boom T sld C Noes () T amb = C, unless oherwise specified. Sresses in excess of he absolue maximum raings can cause permanen damage o he device. Funcional operaion of he device is no implied a hese or any oher condiions in excess of hose given in he operaional secions of his documen. Exposure o absolue maximum raings for exended periods of he ime can adversely affec reliabiliy. () Refer o reflow profile for soldering condiions for surface mouned devices (SMD). Refer o wave profile for soldering condiions for hrough hole devices (DIP). ELECTRICAL CHARACTERISTICS () PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward volage =. ma V F..9 V Breakdown volage I R = µa V BR V Reverse curren V R = V I R. µa Capaciance V R = V, f = MHz C O pf Temperaure coefficien, forward volage =. ma ΔV F /ΔT A -.7 mv/ C OUTPUT Logic low supply curren =. ma, V O = open, V CC = V I CCL µa Logic high supply curren = ma, V O = open, V CC = V I CCH. µa Oupu volage, oupu low = ma, I O =. ma, V CC =. V N3 V OL.. V = ma, I O =. ma, V CC =. V N3 V OL.. V Oupu curren, oupu high = ma, V O = V CC =. V I OH 3 na = ma, V O = V CC = V I OH. µa COUPLER Capaciance (inpu o oupu) f = MHz C IO. pf Noe T amb = C, unless oherwise specified. Minimum and maximum values are esing requiremens. Typical values are characerisics of he device and are he resul of engineering evaluaion. Typical values are for informaion only and are no par of he esing requiremens. For echnical quesions, conac: opocoupler.answers@vishay.com Documen Number: 83 9 Rev.., -Dec-8

3 High Speed Opocoupler, Vishay Semiconducors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Curren ransfer raio = ma, V O =. V, V CC =. V = ma, V O =. V, V CC =. V N3 CTR 7 % N3 CTR 9 3 % N3 CTR % N3 CTR % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT High o low = ma, V CC =. V, R L =. kω N3 PHL.3. µs = ma, V CC =. V, R L =.9 kω N3 PHL..8 µs Low o high = ma, V CC =. V, R L =. kω N3 PLH.3. µs = ma, V CC =. V, R L =.9 kω N3 PLH..8 µs COMMON MODE TRANSIENT IMMUNITY PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT High = ma, V CM = V P-P, V CC = V, R L =. kω N3 CM H V/µs = ma, V CM = V P-P, V CC = V, R L =.9 kω N3 CM H V/µs Low = ma, V CM = V P-P, V CC = V, R L =. kω N3 CM L V/µs = ma, V CM = V P-P, V CC = V, R L =.9 kω N3 CM L V/µs SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climaic classificaion (according o IEC 8 par ) // Comparaive racking index CTI V IOTM 8 V V IORM 89 V P SO mw I SI 3 ma T SI 7 C Creepage disance sandard DIP-8 7 mm Clearance disance sandard DIP-8 7 mm Creepage disance mil DIP-8 8 mm Clearance disance mil DIP-8 8 mm Noe As per IEC 77--, , his opocoupler is suiable for "safe elecrical insulaion" only wihin he safey raings. Compliance wih he safey raings shall be ensured by means of proecive circuis. Documen Number: 83 For echnical quesions, conac: opocoupler.answers@vishay.com Rev.., -Dec-8 7

4 Vishay Semiconducors High Speed Opocoupler, TYPICAL CHARACTERISTICS T amb = C, unless oherwise specified - LED Curren (ma) 7 C C C V F - LED Forward Volage Fig. - LED Forward Curren vs. Forward Volage I O - Oupu Curren (ma) 8 (V CC = V) = ma = 3 ma = 3 ma = ma 8 = ma = ma = ma = ma = ma 98 V O - Oupu Volage (V) Fig. - Oupu Curren vs. Oupu Volage - LED Curren (ma) 3 in3_ 8 T amb - Ambien Temperaure ( C) I O - Oupu Curren (ma) 3 a V O =. V, V CC = V = ma = ma = ma = ma = ma I F = ma T amb - Temperaure ( C) Fig. - Permissible Forward LED Curren vs. Temperaure Fig. - Oupu Curren vs. Temperaure Toal Power (mw) 8 in3_ Deecor Emier 8 T amb - Ambien Temperaure ( C) P - Propagaion Delay Time (ns) 9 8 N3 a V CC = V = ma, R L =.9 kω 7 3 PLH a 3 V PLH a. V PHL a. V PHL a 3 V in3_8 T amb - Temperaure ( C) Fig. 3 - Permissible Power Dissipaion vs. Temperaure Fig. - Propagaion Delay vs. Ambien Temperaure For echnical quesions, conac: opocoupler.answers@vishay.com Documen Number: 83 7 Rev.., -Dec-8

5 High Speed Opocoupler, Vishay Semiconducors P - Propagaion Delay Time (ns) 8 N3 a V CC = V = ma, R L =. kω PLH PHL in3_9 T amb - Temperaure ( C) Δ /ΔI O - Small Signal Curren Transfer Raio in3_ V CC = V, R L = Ω - Forward Curren (ma) Fig. 7 - Propagaion Delay vs. Ambien Temperaure Fig. 9 - Small Signal Curren Transfer Raio vs. Quiescen Inpu Curren I OH - Collecor, I C (na).. V CC = V O = V V CC = V O = V in3_ T amb - Temperaure ( C) Fig. 8 - Logic High Oupu Curren vs. Temperaure Pulse generaor Z O = Ω r, f = ns duy cycle % µs 8 7 R L V V O V monior Ωı 3 V O C L pf V OL PHL PLH. V in3_ Fig. - Swiching Times Documen Number: 83 For echnical quesions, conac: opocoupler.answers@vishay.com Rev.., -Dec-8 7

6 Vishay Semiconducors High Speed Opocoupler, V CM B A R L V V O V 9 % % % 9 % V V r f O V FF V A: = ma in3_ +V CM Pulse generaor Z O = Ω r, f = 8 ns V O V OL B: = ma PACKAGE DIMENSIONS in inches (millimeers) Fig. - Common-Mode Inerference Immuniy Pin one ID. (.8).8 (.8) ISO mehod A.379 (9.3).39 (9.9).3 (.7). (.) yp..3 (.79).3 (3.3). (3.8).3 (7.) yp.. (.7).8 (.). (.).3 (.89) 3 o 9. (.79).3 (3.3).3 (.8). (.3) i78. (.).8 (.). (.) yp.. (.3) Opion Opion 7 Opion 9.7 (.3).39 (9.9).37 (7.8).9 (7.).3 (7.) yp..37 (9.3).39 (.3 ).3 (7.) ref.. (.3). (.). (.).3 (.9).8 (.7).3 (8.) min..33 (8.) min.. (.3) max..8 (.). (.). (.).98 (.9). (. ). (. ).3 (8.) min.. (.3 ) yp. max. 8 For echnical quesions, conac: opocoupler.answers@vishay.com Documen Number: Rev.., -Dec-8

7 High Speed Opocoupler, OZONE DEPLETING SUBSTANCES POLICY STATEMENT Vishay Semiconducors I is he policy of Vishay Semiconducor GmbH o. Mee all presen and fuure naional and inernaional sauory requiremens.. Regularly and coninuously improve he performance of our producs, processes, disribuion and operaing sysems wih respec o heir impac on he healh and safey of our employees and he public, as well as heir impac on he environmen. I is paricular concern o conrol or eliminae releases of hose subsances ino he amosphere which are known as ozone depleing subsances (ODSs). The Monreal Proocol (987) and is London Amendmens (99) inend o severely resric he use of ODSs and forbid heir use wihin he nex en years. Various naional and inernaional iniiaives are pressing for an earlier ban on hese subsances. Vishay Semiconducor GmbH has been able o use is policy of coninuous improvemens o eliminae he use of ODSs lised in he following documens.. Annex A, B and lis of ransiional subsances of he Monreal Proocol and he London Amendmens respecively.. Class I and II ozone depleing subsances in he Clean Air Ac Amendmens of 99 by he Environmenal Proecion Agency (EPA) in he USA. 3. Council Decision 88//EEC and 9/9/EEC Annex A, B and C (ransiional subsances) respecively. Vishay Semiconducor GmbH can cerify ha our semiconducors are no manufacured wih ozone depleing subsances and do no conain such subsances. We reserve he righ o make changes o improve echnical design and may do so wihou furher noice. Parameers can vary in differen applicaions. All operaing parameers mus be validaed for each cusomer applicaion by he cusomer. Should he buyer use Vishay Semiconducors producs for any uninended or unauhorized applicaion, he buyer shall indemnify Vishay Semiconducors agains all claims, coss, damages, and expenses, arising ou of, direcly or indirecly, any claim of personal damage, injury or deah associaed wih such uninended or unauhorized use. Vishay Semiconducor GmbH, P.O.B. 33, D-7 Heilbronn, Germany Documen Number: 83 For echnical quesions, conac: opocoupler.answers@vishay.com Rev.., -Dec-8 7

8 Legal Disclaimer Noice Vishay Disclaimer All produc specificaions and daa are subjec o change wihou noice. Vishay Inerechnology, Inc., is affiliaes, agens, and employees, and all persons acing on is or heir behalf (collecively, Vishay ), disclaim any and all liabiliy for any errors, inaccuracies or incompleeness conained herein or in any oher disclosure relaing o any produc. Vishay disclaims any and all liabiliy arising ou of he use or applicaion of any produc described herein or of any informaion provided herein o he maximum exen permied by law. The produc specificaions do no expand or oherwise modify Vishay s erms and condiions of purchase, including bu no limied o he warrany expressed herein, which apply o hese producs. No license, express or implied, by esoppel or oherwise, o any inellecual propery righs is graned by his documen or by any conduc of Vishay. The producs shown herein are no designed for use in medical, life-saving, or life-susaining applicaions unless oherwise expressly indicaed. Cusomers using or selling Vishay producs no expressly indicaed for use in such applicaions do so enirely a heir own risk and agree o fully indemnify Vishay for any damages arising or resuling from such use or sale. Please conac auhorized Vishay personnel o obain wrien erms and condiions regarding producs designed for such applicaions. Produc names and markings noed herein may be rademarks of heir respecive owners. Documen Number: 9 Revision: 8-Jul-8

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output. i179081 High Speed Opocoupler, MBd, Phoodiode wih Transisor Oupu Feaures Isolaion Tes Volage: V RMS TTL Compaible High Bi Raes:. Mbi/s High Common-Mode Inerference Immuniy Bandwidh. MHz Open-Collecor Oupu Exernal