IXRH 40N120. IGBT with Reverse Blocking capability V CES I C25. = ±1200 V = 55 A V CE(sat) = 2.3 V typ IXYS All rights reserved TO-247 AD
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1 IXRH N wih Reverse Blocking capabiliy S 5 = ± V = 55 (sa) =. V yp. TO-7 D E (TB) E = ae, = ollecor, E = Emier, TB = ollecor Symbol ondiio Maximum Raings S T VJ = 5 o 5 ± V S ± V 5 T = T = 9 5 M = /5 V; = Ω; T VJ 8 K RBSO, lamped inducive load; L = µh V P o T = 5 W Symbol ondiio haracerisic Values (T VJ = 5, unless oherwise specified) min. yp. max. (sa) = ; = 5 V; T VJ = 5..7 V T VJ.8 V (h) = m; = 8 V Feaures wih NPT (non punch hrough) srucure reverse blocking capabiliy - funcion of series diode monolihically inegraed, no exernal series diode required - sof reverse recovery posiive emperaure coefficien of sauraion volage Epoxy of TO-7 package mees L 9V- pplicaio converers requiring reverse blocking capabiliy: - curren source inverers - marix converers - bi-direcional swiches - resonan converers - inducion heaing - auxiliary swiches for sof swiching in he main curren pah ES = S ; = V; T VJ = 5 5 µ T VJ. m I ES = V; = ± V 5 n Q on = V; = 5 V; 9 n IXYS reserves he righ o change limis, es condiio and dimeio. 5 IXYS ll righs reserved IXYS Semiconducor mbh Edisor. 5, D-8 Lamperheim Phone: , Fax: IXYS orporaion 5 Basse Sree, Sana lara 955 Phone: (8) 98-7, Fax: 8-9-7
2 IXRH N Symbol ondiio haracerisic Values (T VJ = 5, unless oherwise specified) yp. Exernal diode DSEP- - diagram see Fig. 7 d(on) r Inducive load, T 5 VJ d(off) V 8 E = V; f V E E ; on..7 Inernal diode - diagram see Fig. 8 d(on) 9.5 r 7 d(off) Inducive load, T VJ 8 f = V; ; 9.. E rec in 7 I F ; di /d = -5 /µs; T VJ 8.5 rr = - V; = 5 V. µs R hj omponen. K/W Symbol ondiio Maximum Raings T VJ T sg M d mouning orque.8 -. Nm F mouning force wih clip... N TO-7 D Ouline Dim. Millimeer Inches Min. Max. Min. Max b b b D E e L L.5.77 P Q R S.5 BS BS Symbol ondiio haracerisic Values min. yp. max. R hh wih heasink compound.5 K/W Weigh g IXYS reserves he righ o change limis, es condiio and dimeio. 5 IXYS ll righs reserved 5-5
3 IXRH N 7 5 = 5 = 9 V 7 V 5 V V V 7 5 = 9 V 7 V 5 V V V 9 V 9 V V 8 V 8 Fig. Typical oupu characerisics Fig. Typical oupu characerisics = V = 5 = - 5 V = 7 = 7.5 = 5 V V T VJ Fig. Typical rafer characerisics Fig. Typ. collecor emier sauraion as a funcion of case emperaure 5 5 = V r V E R 8 E d(off) Eon off 9 = V 8 T E J 7 off 5 7 d(on) 5 7 f Fig. 5 Typ. urn on energy and swiching imes vs. collecor curren, inducive swiching wih ex. free wheeling diode (Fig. 7) Fig. Typ. urn off energy and swiching imes vs. collecor curren, inducive swiching wih ex. free wheeling diode (Fig. 7) IXYS reserves he righ o change limis, es condiio and dimeio. 5 IXYS ll righs reserved 5-5
4 IXRH N = V r d(on) = V d(off) 8 Ω Fig. 7 Typ. urn on energy and swiching imes vs. gae resisor, inducive swiching wih ex. free wheeling diode (Fig. 7) 8 Ω Fig. 8 Typ. urn off energy and swiching imes vs. gae resisor, inducive swiching wih ex. free wheeling diode (Fig. 7) f E recin 5 = V r d(on) 5 9 = V d(off) f 8 E rec in 8 8 Fig. 9 Typ. urn on energy and swiching imes vs. collecor curren, inducive swiching wih inernal diode (Fig. 8) Fig. Typ. urn off energy and swiching imes vs. collecor curren, inducive swiching wih inernal diode (Fig. 8) 5 5 E recin r d(on) = V = V d(off) Ω 8 f Ω Fig. Typ. urn on energy and swiching imes vs. gae resisor, inducive swiching wih inernal diode (Fig. 8) Fig. Typ. urn off energy and swiching imes vs. gae resisor, inducive swiching wih inernal diode (Fig. 8) IXYS reserves he righ o change limis, es condiio and dimeio. 5 IXYS ll righs reserved 5-5
5 IXRH N 5 = - V rr 8 5 Q rr 5 = - V 5 di F /d 9 /µs 5 di F /d /µs Fig. Typ. urn off characerisics of he inernal diode Fig. Typ. urn off characerisics of he inernal diode.5 V. K/W 8 = V Z hj Fig. 5 Typical gae charge Q IXRHN.... s Fig. Typ. raien hermal impedance Ri τ curren seing Free wheeling diode Inducance Volage source +5 V is on DT Inducance Volage source Driver ae Resisor Device under es Driver ae Resisor DT Fig. 7 urn-on/urn-off wih exernal diode (DSEP -) curren seing curren seing Fig. 8 urn-on/urn-off wih inernal diode IXYS reserves he righ o change limis, es condiio and dimeio. 5 IXYS ll righs reserved 5 5-5
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