<IGBT Modules> CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE

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Corey Kelly
6 years ago
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.. 1 5 0 Flabase ype opper base plae (non-plaing) Main erminal screws are no aached.

1 single swich APPLIATION A Moor onrol, Moion/Servo onrol, Power supply, ec. OUTLINE DRAWING & INTERNAL ONNETION ollecor curren I A ollecor-emier volage VES V Maximum juncion emperaure T j max Flabase ype opper base plae (non-plaing) Main erminal screws are no aached. RoHS Direcive complian Recognized under UL1557, File E Dimension in mm E G (Es) INTERNAL ONNETION Di1 E Tr1 Tolerance oherwise specified Division of Dimension Tolerance 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 over 30 o 120 ±0.8 over 120 o 400 ±1.2 Publicaion Dae : April

2 MAXIMUM RATINGS (Tj=25, unless oherwise specified) Symbol Iem ondiions Raing Uni V ES ollecor-emier volage G-E shor-circuied 1200 V V GES Gae-emier volage -E shor-circuied ± 20 V I D, T=80 (Noe2, 4) 600 ollecor curren I RM Pulse, Repeiive (Noe3) 1200 P o Toal power dissipaion T=25 (Noe2, 4) 3670 W (Noe1) IE D (Noe2) 600 Emier curren IERM (Noe1) Pulse, Repeiive (Noe3) 1200 V isol Isolaion volage Terminals o base plae, RMS, f=60 Hz, A 1 min 2500 V T j Operaing juncion emperaure ~ +150 T sg Sorage emperaure ~ +125 ELETRIAL HARATERISTIS (Tj=25, unless oherwise specified) Symbol Iem ondiions Limis Min. Typ. Max. I ES ollecor-emier cu-off curren VE=VES, G-E shor-circuied ma I GES Gae-emier leakage curren VGE=VGES, -E shor-circuied μa V GE(h) Gae-emier hreshold volage I=60 ma, VE=10 V V V Esa ollecor-emier sauraion volage I=600 A, VGE=15 V (Noe5) T j = Refer o he figure of es circui T j = ies Inpu capaciance oes Oupu capaciance V E=10 V, G-E shor-circuied nf res Reverse ransfer capaciance Q G Gae charge V=600 V, I=600 A, VGE=15 V μ d(on) Turn-on delay ime V=600 V, I=600 A, VGE=±15 V, r Rise ime d(off) Turn-off delay ime RG=0.52 Ω, Inducive load f Fall ime V E (Noe.1) Emier-collecor volage I E=600 A, G-E shor-circuied (Noe5) Refer o he figure of es circui A A Uni V ns V rr (Noe1) Reverse recovery ime V=600 V, IE=600 A, VGE=±15 V, ns Q rr (Noe1) Reverse recovery charge R G=0.52 Ω, Inducive load μ E on Turn-on swiching energy per pulse V =600 V, I =I E=600 A, E off Turn-off swiching energy per pulse V GE=±15 V, R G=0.52 Ω, T j =125, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj r g Inernal gae resisance T c=25 (Noe4) Ω mj THERMAL RESISTANE HARATERISTIS Limis Symbol Iem ondiions Uni Min. Typ. Max. R h(j-c)q Juncion o case, per IGBT (Noe4) Thermal resisance K/kW R h(j-c)d Juncion o case, per FWD (Noe4) R h(c-s ) onac hermal resisance ase o hea sink, Thermal grease applied (Noe4, 6) K/kW MEHANIAL HARATERISTIS Limis Symbol Iem ondiions Uni Min. Typ. Max. M Main erminals M 6 screw Mouning orque N m G/E auxiliary erminals M 4 screw M s Mouning orque Mouning o hea sink M 6 screw N m m mass g e c Flaness of base plae On he cenerline X, Y (Noe7) ± μm Publicaion Dae : April

3 *: This produc is complian wih he Resricion of he Use of erain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2011/65/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (FWD). 2. Juncion emperaure (T vj) should no increase beyond T vjmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T vj) dose no exceed T vjmax raing. 4. ase emperaure (T) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. 6. Typical value is measured by using hermally conducive grease of λ=0.9 W/(m K) 7. The base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +: onvex -: oncave X Mouning side Y Mouning side -: oncave Mouning side +: onvex REOMMENDED OPERATING ONDITIONS Symbol Iem ondiions Limis Min. Typ. Max. Uni V (D) Supply volage Applied across -E erminals V V GEon Gae (-emier drive) volage Applied across G-Es erminals V RG Exernal gae resisance Per swich Ω HIP LOATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWD Publicaion Dae : April

4 TEST IRUIT AND WAVEFORMS v GE ~ 90 % -V GE G Load 0 V 0 i E Q rr =0.5 I rr rr DUT Es E + V i ~ 90 % 0 A I E rr +V GE R G 0 vge i -V GE Es E G ve 0 A d(on) r d(off) f 10% I rr 0.5 I rr Swiching characerisics es circui and waveforms rr, Qrr characerisics es waveform IEM ve IM V i i V IM ve ie ve V 0 A IM 0.1 V V 0.02 IM 0 V i i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWD Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST IRUIT VGE=15 V G I G-E shorcircuied G IE V Es E V Es E VEsa characerisics es circui VE characerisics es circui Publicaion Dae : April

5 PERFORMANE URVES T j=25 OUTPUT HARATERISTIS OLLETOR-EMITTER SATURATION VOLTAGE HARATERISTIS V GE=15 V VGE=20 V 13 V 15 V T j=125 OLLETOR URRENT I (A) 12 V 11 V 10 V OLLETOR-EMITTER SATURATION VOLTAGE VEsa (V) T j=25 9 V OLLETOR-EMITTER VOLTAGE V E (V) OLLETOR-EMITTER SATURATION VOLTAGE HARATERISTIS T j=25 OLLETOR URRENT I (A) FREE WHEELING DIODE FORWARD HARATERISTIS G-E shor-circuied OLLETOR-EMITTER SATURATION VOLTAGE VEsa (V) I =1200 A I =600 A I =240 A EMITTER URRENT IE (A) T j=125 T j=25 GATE-EMITTER VOLTAGE V GE (V) EMITTER-OLLETOR VOLTAGE V E (V) Publicaion Dae : April

6 PERFORMANE URVES HALF-BRIDGE SWITHING HARATERISTIS V =600 V, V GE=±15 V, R G=0.52 Ω, T j=125, INDUTIVE LOAD d(off) f d(on) SWITHING TIME (ns) r OLLETOR URRENT I (A) HALF-BRIDGE SWITHING HARATERISTIS HALF-BRIDGE SWITHING HARATERISTIS V =600 V, V GE=±15 V, R G=0.52 Ω, T j=125 V =600 V, V GE=±15 V, I /I E=600 A, T j=125 INDUTIVE LOAD, PER PULSE INDUTIVE LOAD, PER PULSE SWITHING ENERGY (mj) REVERSE REOVERY ENERGY (mj) E off E on E rr SWITHING ENERGY (mj) REVERSE REOVERY ENERGY (mj) E off E on E rr OLLETOR URRENT I (A) EMITTER URRENT I E (A) EXTERNAL GATE RESISTANE R G (Ω) Publicaion Dae : April

7 PERFORMANE URVES APAITANE HARATERISTIS G-E shor-circuied, T j=25 FREE WHEELING DIODE REVERSE REOVERY HARATERISTIS V =600 V, V GE=±15 V, R G=0.52 Ω, T j=125. INDUTIVE LOAD ies I rr APAITANE (nf) oes rr (ns), I rr (A) rr res OLLETOR-EMITTER VOLTAGE V E (V) EMITTER URRENT I E (A) GATE HARGE HARATERISTIS TRANSIENT THERMAL IMPEDANE HARATERISTIS (MAXIMUM) I =600 A, T j=25 Single pulse, T =25 R h(j-c)q=34 K/kW, R h(j-c)d=53 K/kW GATE-EMITTER VOLTAGE VGE (V) V=400 V V=600 V NORMALIZED TRANSIENT THERMAL RESISTANE Z h(j- c) GATE HARGE Q G (n) TIME (S) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : April

8 PERFORMANE URVES TURN-OFF SWITHING SAFE OPERATIONG AREA (REVERSE BIAS SAFE OPERATING AREA) (MAXIMUM) V 800 V, V GE=±15 V, R G=0.52~7.8 Ω, T j=25~125 SHORT-IRUIT SAFE OPERATING AREA (MAXIMUM) V 800 V, V GE=±15 V, R G=0.52~7.8 Ω, T j= 25 ~ 125, W 10 μs, Non-Repeiive NORMALIZED OLLETOR URRENT I NORMALIZED OLLETOR URRENT I OLLETOR-EMITTER VOLTAGE V E (V) OLLETOR-EMITTER VOLTAGE V E (V) Publicaion Dae : April

9 Keep safey firs in your circui designs! Misubishi Elecric orporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric orporaion or a hird pary. Misubishi Elecric orporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric orporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric orporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric orporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric orporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric orporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric orporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric orporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric orporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric orporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein MITSUBISHI ELETRI ORPORATION. ALL RIGHTS RESERVED. Publicaion Dae : April

<IGBT Modules> CM600HA-34S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM600HA-34S HIGH POWER SWITCHING USE INSULATED TYPE single pack Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 7 0 0 V Maximum juncion emperaure T vjmax... 7 5 C Fla base Type Copper base plae Tin plaing pin erminals RoHS Direcive complian