CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single

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1 MHX-1A MHX-1A I...A S... Single Flatbase Type / Insulated Package / opper (non-plating) base plate RoHS Directive compliant APPLIATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLIN DRAWING & IRUIT DIAGRAM (1.) 11 ±. (1.) M NUTS () Dimensions in mm 1.1. (.4) 1. (.81) (14) (14) ±.. TRMINAL t =.8 φ4. φ. φ (1.14) A (.) LABL (1.) 4-φ. MOUNTING HOLS (.4) 1. (SRWING DPTH) (.) STION A Pin positions with tolerance φ. (4) (48) TH1 (1) NT TH () G1 (1) 1 (1) () * Use both terminals (/) to the external connection. IRUIT DIAGRAM (4) () Division of Dimension Tolerance. to ±. over to ±. over to ±. over to 1 ±.8 over 1 to 4 ±1. Jan. 9

2 MHX-1A ABSOLUT MAXIMUM RATINGS (Tj =, unless otherwise specified) INRTR PART Symbol Parameter onditions Rating Unit S GS I IRM P I (Note.) IRM(Note.) Tj Tstg iso ollector-emitter voltage Gate-emitter voltage ollector current Maximum collector dissipation mitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage Base plate flatness Torque sength Torque sength Weight G- Short - Short D, T = Pulse T = T = Pulse Terminals to base plate, f = Hz, A 1 minute On the centerilne X, Y Main terminals M screw Mounting M screw (Typical) Note. 8: The base plate flatness measurement points are in the following figure. (Note. 1) (Note. 4) (Note. 1, ) (Note. 1) (Note. 4) (Note. 8) ± ~ +1 4 ~ +1 ± ~ +1. ~ 4.. ~. A W A rms μm N m g Jan. 9

3 MHX-1A LTRIAL HARATRISTIS (Tj =, unless otherwise specified) INRTR PART IS G(th) IGS (sat) ies oes res QG tf r Symbol Parameter onditions (Note.) Qrr (Note.) (Note.) Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG ollector cutoff current Gate-emitter threshold voltage Gate leakage current ollector-emitter saturation voltage Input capacitance Output capacitance Reverse ansfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge mitter-collector voltage Module lead resistance Thermal resistance (Junction to case) (Note. 1) ontact thermal resistance (ase to heat sink) (Note. 1) Internal gate resistance xternal gate resistance = S, G = I = ma, = 1 ±G = GS, = I = A, G = 1 I = A, G = 1 = 1 G = =, I = A, G = 1 =, I = A G = ±1, RG = 1.Ω (I = A) I = A, G = I = A, G = Main terminals-chip per IGBT per free wheeling diode Thermal grease applied T = T = 1 (Note. ) (Note. ) Tj = Tj = 1 hip (Note. ) Tj = Tj = 1 hip (Note. ) Limits Min. Typ. Max Unit ma μa nf n ns μ mω K/W Ω NT THRMISTOR PART Symbol Parameter onditions R ΔR/R B(/) P Zero power resistance Deviation of resistance B constant Power dissipation T = T = 1, R1 = 49Ω Approximate by equation T = (Note. ) Limits Min. Typ. Max Unit kω % K mw Note.1: ase temperature (T), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) : Typical value is measured by using thermally conductive grease of λ =.9W/(m K). : I, IRM,, r and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. : Junction temperature (Tj) should not increase beyond 1. : Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for (sat) and ) R : 1 1 B(/) = In( )/( ) R T T R: resistance at absolute temperature T [K]; T = [ ]+.1 = 98.1 [K] R: resistance at absolute temperature T [K]; T = [ ]+.1 =.1 [K] Jan. 9

4 MHX-1A hip Location (Top view) Dimensions in mm (tolerance: ±1mm) (1) (11.) (11) Tr Di () () Tr Di. 48 Th LABL SID ach mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NT thermistor (s) (s) G = 1 G I G = G I (s) (s) (sat) test circuit test circuit G 9% I % r G Load I + I 9% A t +G G RG G I A tf 1% Irr 1/ Irr Qrr = 1/ Irr r Switching time test circuit and waveforms r, Qrr test waveform Jan. 9 4

5 MHX-1A PRFORMAN URS OLLTOR URRNT I (A) G = OUTPUT HARATRISTIS (TYPIAL) Inverter part 1 1 Tj = OLLTOR-MITTR OLTAG () OLLTOR-MITTR SATURATION OLTAG (sat) () OLLTOR-MITTR SATURATION OLTAG HARATRISTIS (TYPIAL) Inverter part G = 1. Tj = Tj = OLLTOR URRNT I (A) OLLTOR-MITTR SATURATION OLTAG (sat) () OLLTOR-MITTR SATURATION OLTAG HARATRISTIS (TYPIAL) Inverter part Tj = I = A I = 1A I = 4A MITTR URRNT I (A) FR WHLING DIOD FORWARD HARATRISTIS (TYPIAL) Inverter part 1 Tj = 1 1 Tj = GAT-MITTR OLTAG G () MITTR-OLLTOR OLTAG () APAITAN (nf) APAITAN HARATRISTIS (TYPIAL) Inverter part ies oes res G = SWITHING TIM (ns) HALF-BRIDG SWITHING HARATRISTIS (TYPIAL) Inverter part onditions: = G = ±1 RG = 1Ω tf Tj = OLLTOR-MITTR OLTAG () OLLTOR URRNT I (A) Jan. 9

6 MHX-1A SWITHING TIM (ns) 1 4 HALF-BRIDG SWITHING HARATRISTIS (TYPIAL) Inverter part 1 onditions: = G = ±1 tf I = A Tj = SWITHING LOSS (mj/pulse) HALF-BRIDG SWITHING HARATRISTIS (TYPIAL) Inverter part onditions: = G = ±1 RG = 1Ω Tj = 1 off on rr GAT RSISTAN RG (Ω) OLLTOR URRNT I (A) MITTR URRNT I (A) SWITHING LOSS (mj/pulse) HALF-BRIDG SWITHING HARATRISTIS (TYPIAL) Inverter part on off onditions: rr = G = ±1 I, I = A Tj = lrr (A), r (ns) RRS RORY HARATRISTIS OF FR WHLING DIOD (TYPIAL) Inverter part 1 1 onditions: = G = ±1 RG = 1Ω Tj = Irr r GAT RSISTAN RG (Ω) MITTR URRNT I (A) GAT-MITTR OLTAG G () 1 1 GAT HARG HARATRISTIS (TYPIAL) Inverter part I = A = = 1 1 NORMALIZD TRANSINT THRMAL IMPDAN Zth(j c) 1 Single pulse T = 1 1 TRANSINT THRMAL IMPDAN HARATRISTIS 1 Inverter IGBT part : Per unit base = Rth(j c) =.K/W Inverter FWDi part : Per unit base = Rth(j c) =.11K/W GAT HARG QG (n) TIM (s) Jan. 9

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