<IGBT Modules> CM300DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE

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APPLICATION dual swich (half-bridge) AC Moor Conrol, Moion/Servo Conrol, Power

.. 1 7 V Maximum juncion emperaure T vjmax.

Tin-plaing pin erminals UL Recognized under UL17, File No.

Tolerance oherwise specified 9 8 1. TH1 6. C2E1 Division of Dimension Tolerance 2.

1 APPLICATION dual swich (half-bridge) AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING Collecor curren IC A Collecor-emier volage VCES V Maximum juncion emperaure T vjmax C Fla base ype Copper base plae (non-plaing) RoHS Direcive complian Tin-plaing pin erminals UL Recognized under UL17, File No. E28 Dimension in mm TERMINAL SECTION A DETAIL B INTERNAL CONNECTION Terminal code Tolerance oherwise specified TH1 6. C2E1 Division of Dimension Tolerance 2. TH2 7. C2E1. o ±.2 Tr2. G1 8. G2 over o 6 ±. 7. Es1 9. Es2 over 6 o ±. Di1 Di2. Cs1. E2 over o 12 ±.8 6 Tr1. C1 over 12 o ±1.2 NTC Th 1 2 Publicaion Dae : January CMH-167

2 MAXIMUM RATINGS (Tvj=2 C, unless oherwise specified) INVERTER PART IGBT/FWD Symbol Iem Condiions Raing Uni V CES Collecor-emier volage G-E shor-circuied 17 V V GES Gae-emier volage C-E shor-circuied ± 2 V (Noe2, ) I C DC, TC=12 C Collecor curren (Noe) I CRM Pulse, Repeiive 6 P o Toal power dissipaion TC=2 C (Noe2, ) W (Noe1) IE DC (Noe2) Emier curren IERM (Noe1) (Noe) Pulse, Repeiive 6 MODULE Symbol Iem Condiions Raing Uni V i s o l Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC 1 min V T vjm a x Maximum juncion emperaure Insananeous even (overload) 17 T C m a x Maximum case emperaure (Noe) 12 T vjop Operaing juncion emperaure Coninuous operaion (under swiching) - ~ +1 T s g Sorage emperaure - - ~ +12 ELECTRICAL CHARACTERISTICS (Tvj=2 C, unless oherwise specified) INVERTER PART IGBT/FWD Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren VCE=VCES, G-E shor-circuied ma I G ES Gae-emier leakage curren VGE=VGES, C-E shor-circuied - -. μa V G E( h) Gae-emier hreshold volage IC= ma, VCE= V V V CEsa (Terminal) V CEsa (Chip) Collecor-emier sauraion volage IC= A, VGE=1 V, T vj=2 C Refer o he figure of es circui T vj=12 C V (Noe) T vj=1 C IC= A, T vj=2 C VGE=1 V, T vj=12 C V (Noe) T vj=1 C C ies Inpu capaciance C o e s Oupu capaciance V CE= V, G-E shor-circuied nf C r e s Reverse ransfer capaciance Q G Gae charge VCC= V, IC= A, VGE=1 V nc d ( o n ) Turn-on delay ime - - VCC= V, IC= A, VGE=±1 V, r Rise ime - - d ( o f f ) Turn-off delay ime RG=1.2 Ω, Inducive load f Fall ime V EC (Noe1) (Terminal) V EC (Noe1) (Chip) Emier-collecor volage IE= A, G-E shor-circuied, T vj=2 C -.1. Refer o he figure of es circui T vj=12 C V (Noe) T vj=1 C IE= A, T vj=2 C -..2 G-E shor-circuied, T vj=12 C V (Noe) T vj=1 C rr (Noe1) Reverse recovery ime VCC= V, IE= A, VGE=±1 V, - - ns Q rr (Noe1) Reverse recovery charge R G=1.2 Ω, Inducive load - - μc E on Turn-on swiching energy per pulse V CC= V, I C=I E= A, E off Turn-off swiching energy per pulse V GE=±1 V, R G=1.2 Ω, T vj=1 C, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, TC=2 C (Noe) mω r g Inernal gae resisance Per swich Ω A A C C Uni ns mj Publicaion Dae : January CMH-167

3 ELECTRICAL CHARACTERISTICS (con.; Tvj=2 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions Limis Min. Typ. Max. R 2 Zero-power resisance TC=2 C (Noe).8..1 kω ΔR/R Deviaion of resisance R=9 Ω, TC= C (Noe) % B (2/ ) B-consan Approximae by equaion (Noe6) K P 2 Power dissipaion TC=2 C (Noe) - - mw THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. (Noe) R h ( j - c ) Q Juncion o case, per Inverer IGBT - - Thermal resisance (Noe) R h ( j - c)d Juncion o case, per Inverer FWD R h ( c - s ) Conac hermal resisance MECHANICAL CHARACTERISTICS (Noe, 7) Case o hea sink, Thermal grease applied per 1 module, Symbol Iem Condiions Uni Uni K/kW K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 6 screw... N m M s Mouning orque Mouning o hea sink M screw 2... N m d s d a Creepage disance Clearance Terminal o erminal Terminal o base plae Terminal o erminal - - Terminal o base plae e c Flaness of base plae On he cenerline X, Y (Noe8) ± - + μm m mass g *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2/6/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (FWD). 2. Juncion emperaure (T vj) should no increase beyond T vjm a x raing.. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T vj) dose no exceed T vjm a x raing.. Case emperaure (TC) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion.. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. R 6. B ln( ( 2/ ) )/( ) R T2 T R2: resisance a absolue -:Concave emperaure T2 [K]; T2=2 [ C]+27.1=298.1 [K] R: resisance a absolue emperaure T [K]; T= [ C]+27.1=2.1 [K] 7. Typical value is measured +:Convex by using hermally conducive grease of λ=.9 W/(m K)/D(C-S)= μm. 8. The base plae (mouning side) flaness measuremen poins (X, Y) are shown in he following figure. Uni mm mm +:Convex -:Concave X Y Mouning side Mouning side -:Concave Mouning side +:Convex Publicaion Dae : January 217 CMH-167

4 Noe. Use he following screws when mouning he prined circui board (PCB) on he sandoffs. PCB hickness : 1.~1.6 Type Manufacurer Size Tighening orque (N m) (1) PT EJOT K2 8. ±. Recommended ighening mehod (2) PT K2.7 ±.7 N m by handwork (equivalen o r/min () DELTA PT 2 8. ±. N m by mechanical screw driver) () DELTA PT 2.7 ±.7 N m ~ 6 r/min (by mechanical screw driver) () B1 - φ2.6 apping screw φ RECOMMENDED OPERATING CONDITIONS.7 ±.7 N m Symbol Iem Condiions Limis Min. Typ. Max. V CC (DC) Supply volage Applied across C1-E2 erminals - 12 V V GEon Gae (-emier drive) volage Applied across G1-E1s/G2-E2s erminals V RG Exernal gae resisance Per swich Ω Uni CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWD, Th: NTC hermisor Publicaion Dae : January 217 CMH-167

5 TEST CIRCUIT AND WAVEFORMS -V GE 6/7 i E Load + V CC V v GE i C ~ ~ 9 % 9 % i E A I E Q rr =. I rr rr rr V +V GE -V GE R G vge 8 9 vce i C A d ( o n ) Swiching characerisics es circui and waveforms r d ( o ff ) f % I rr. I rr rr, Qrr characerisics es waveform IEM vce ICM VCC ic ic ic VCC VCC ICM ICM vce vce ie vec VCC A.1 VCC.1 ICM.1 VCC.1 VCC i i.2 ICM.2 ICM V i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWD Reverse recovery energy VGE=1 V VGE=1 V Swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT VGE=1 V V G-E shorcircuied 8 6/7 IC G-E shorcircuied VGE=1 V 8 6/7 V IC G-E shorcircuied V G-E shorcircuied 8 6/7 IE G-E shorcircuied G-E shorcircuied 8 6/7 V IE Tr1 Tr2 Di1 Di2 VCEsa characerisics es circui VEC characerisics es circui Publicaion Dae : January 217 CMH-167

6 PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS T vj=2 C (chip) V GE=1 V (chip) COLLECTOR CURRENT IC (A) 6 2 VGE=2 V 1 V V V 9 V 8 V COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsa (V).. T vj=12 C T vj=1 C 2. 2 T 1. vj=2 C COLLECTOR CURRENT I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS G-E shor-circuied T vj=12 C (chip) T vj=1 C EMITTER CURRENT IE (A) T vj=2 C EMITTER-COLLECTOR VOLTAGE V EC (V) Publicaion Dae : January CMH-167

7 PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC= V, R G= Ω, V GE=±1 V, INDUCTIVE LOAD V CC= V, I C= A, V GE=±1 V, INDUCTIVE LOAD : T vj=1 C, : T vj=12 C : T vj=1 C, : T vj=12 C f r f SWITCHING TIME r, d(on), f (ns) d ( o ff) d ( o n ) SWITCHING TIME d(off) (ns) SWITCHING TIME d(on), d(off) (ns) d ( o ff) d ( o n ) SWITCHING TIME r, f (ns) r COLLECTOR CURRENT I C (A) 1 EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC= V, R G= Ω, V GE=±1 V, INDUCTIVE LOAD, V CC= V, I C/I E= A, V GE=±1 V, INDUCTIVE LOAD, : T vj=1 C, : T vj=12 C, PER PULSE : T vj=1 C, : T vj=12 C, PER PULSE E rr SWITCHING ENERGY (mj) E o f f E on 1 REVERSE RECOVERY ENERGY (mj) SWITCHING ENERGY (mj) REVERSE RECOVERY ENERGY (mj) E on E o f f E rr 1.1 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) 1 EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : January CMH-167

8 PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS V CC= V, R G= Ω, V GE=±1 V, INDUCTIVE LOAD G-E shor-circuied, T vj=2 C : T j=1 C, : T j=12 C C i e s rr CAPACITANCE (nf) C o e s rr (ns),i rr (A) I rr 1 C r e s COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) V CC= V, I C= A, T vj=2 C Single pulse, T C=2 C R h ( j - c ) Q= K/kW, R h ( j - c)d=8 K/kW 2 1 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL RESISTANCE Z h ( j - c) GATE CHARGE Q G (nc) TIME (S) Publicaion Dae : January CMH-167

9 PERFORMANCE CURVES NTC hermisor par TEMPERATURE CHARACTERISTICS RESISTANCE R (kω) TEMPERATURE T ( C) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : January CMH-167

10 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. Generally he lised company name and he brand name are he rademarks or regisered rademarks of he respecive companies. 217 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publicaion Dae : January 217 CMH-167

<IGBT Modules> CM600HA-34S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM600HA-34S HIGH POWER SWITCHING USE INSULATED TYPE single pack Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 7 0 0 V Maximum juncion emperaure T vjmax... 7 5 C Fla base Type Copper base plae Tin plaing pin erminals RoHS Direcive complian