Technical. Application. Assembly. Availability. Pricing. Phone

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1 62 Baker Road, Suite 8 Minnetonka, MN Phone (952) Fax (952) ank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone sales@chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES -

2 CMDXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) Dual IGBTMOD NX-S Series Module Amperes/2 Volts K L Y Z G A B C J K L D E F AT AU AU AV AU AE X(4 PLACES) M S R Q AH AJ AL AK DETAIL "A" 34 D AC E AB C() C(2) E2(3) E2(4) F R AA Z AD Es G TH2 (62) (6) (57) W(6 PLACES) NTC DETAIL "B" TH Cs (56) (52) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D E 4.33±.2.±.5 F G H J K L M N P Q R S T U V.4.53 W M6 Metric M6 X Dia V Es2 G2 Cs2 (47) (46) (42) U T DETAIL "A" EC2 (33) EC2 (32) H P N C H AC AF AG AP AN AS AR DETAIL "B" Tolerance Otherwise Specified (mm) Division of Dimension Tolerance.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 2 ±.8 over 2 to 4 ±.2 e tolerance of size between terminals is assumed to ±.4 Dimensions Inches Millimeters Y Z AA AB AC.5 3. AD.9 3. AE AF.67+.4/ /-.5 AG AH AJ.5.2 AK.2.65 AL AN AP.2 3. AQ.88 Dia Dia. AR.2 Dia. 2.6 Dia. AS.6 Dia. 4.3 Dia. AT AU AV AQ Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CMDXL-24S is a 2V (V CES ), Ampere Dual IGBTMOD Power Module. Type Current Rating V CES Amperes Volts (x 5) CM 24 6/ Rev. 3

3 CMDXL-24S Amperes/2 Volts Absolute Maximum Ratings, unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (V GE = V) V CES 2 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (DC, T C = 24 C) *2,* I C 9 Amperes Collector Current (Pulse, Repetitive) *3 I CRM 2 Amperes Total Power Dissipation (T C = 25 C) *2,*4 P tot 75 Watts Emitter Current (T C = 25 C) *2,*4,* I * E 9 Amperes Emitter Current (Pulse, Repetitive) *3 I * ERM 2 Amperes Module Characteristics Symbol Rating Units Maximum Junction Temperature T j(max) 75 C Maximum Case Temperature *2 T C(max) 25 C Operating Junction Temperature T j(op) -4 to +5 C Storage Temperature T stg -4 to +25 C Isolation Voltage (Terminals to Baseplate, f = 6Hz, AC minute) V ISO 25 Volts * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *4 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. * is module has A size IGBT and FWDi chips. is limitation is based on the terminal design / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip. 2 6/ Rev. 3

4 CMDXL-24S Amperes/2 Volts Electrical Characteristics, unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current I CES V CE = V CES, V GE = V ma Gate-Emitter Leakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter reshold Voltage V GE(th) I C = ma, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = A, V GE = 5V, * Volts (Terminal) I C = A, V GE = 5V, *5 2.5 Volts I C = A, V GE = 5V, T j = 5 C *5 2. Volts Collector-Emitter Saturation Voltage V CE(sat) I C = A, V GE = 5V, * Volts (Chip) I C = A, V GE = 5V, *5.9 Volts I C = A, V GE = 5V, T j = 5 C *5.95 Volts Input Capacitance C ies nf Output Capacitance C oes V CE = V, V GE = V 2 nf Reverse Transfer Capacitance C res.7 nf Gate Charge Q G V CC = 6V, I C = A, V GE = 5V 23 nc Turn-on Delay Time t d(on) 8 ns Rise Time t r V CC = 6V, I C = A,, 2 ns Turn-off Delay Time t d(off) R G = Ω, 6 ns Fall Time t f 3 ns Emitter-Collector Voltage V * EC I E = A, V GE = V, * Volts (Terminal) I E = A, V GE = V, *5.85 Volts I E = A, V GE = V, T j = 5 C *5.85 Volts Emitter-Collector Voltage V * EC I E = A, V GE = V, * Volts (Chip) I E = A, V GE = V, *5.7 Volts I E = A, V GE = V, T j = 5 C *5.7 Volts Reverse Recovery Time t * rr V CC = V, I E = 6A, 3 ns Reverse Recovery Charge Q * rr R G = Ω, 53.3 µc Turn-on Switching Energy per Pulse E on V CC = 6V, I C = I E = A, 89 mj Turn-off Switching Energy per Pulse E off, R G = Ω, 37 mj Reverse Recovery Energy per Pulse E * rr T j = 5 C, 73 mj Internal Lead Resistance R CC' + EE' Main Terminals-Chip,.5 mω Per Switch,T C = 25 C *2 Internal Gate Resistance r g Per Switch 2. Ω * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise / Rev / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip. 3

5 CMDXL-24S Amperes/2 Volts Electrical Characteristics, unless otherwise specified (continued) NTC ermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R 25 T C = 25 C * kω Deviation of Resistance R/R T C = C, R = 493Ω % B Constant B (25/5) Approximate by Equation * K Power Dissipation P 25 T C = 25 C *2 mw ermal Resistance Characteristics ermal Resistance, Junction to Case *2 R th(j-c) Q Per Inverter IGBT.2 K/W ermal Resistance, Junction to Case *2 R th(j-c) D Per Inverter FWDi.38 K/W Contact ermal Resistance, R th(c-f) ermal Grease Applied.7 K/W Case to Heatsink *2 (Per Module) *7 Mechanical Characteristics Mounting Torque M t Main Terminals, M6 Screw in-lb M s Mounting to Heatsink, M5 Screw in-lb Creepage Distance d s Terminal to Terminal mm Terminal to Baseplate mm Clearance d a Terminal to Terminal mm Terminal to Baseplate mm Weight m 69 Grams Flatness of Baseplate e c On Centerline X, Y *8 ± ± µm Recommended Operating Conditons, T a = 25 C (DC) Supply Voltage V CC Applied Across C-E Volts Gate (-Emitter Drive) Voltage V GE(on) Applied Across G-Es / G2-Es Volts External Gate Resistance R G Per Switch 5. Ω *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips *6 B (25/5) = In( R 25 )/( ) R 5 T 25 T 5 R 25 ; Resistance at Absolute Temperature T 25 [K]; T 25 = 25 [ C] = [K] R 5 ; Resistance at Absolute Temperature T 5 [K]; T 5 = 5 [ C] = [K] *7 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. + : CONVEX : CONCAVE X Y MOUNTING SIDE / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip MOUNTING SIDE : CONCAVE + : CONVEX 4 6/ Rev. 3

6 CMDXL-24S Amperes/2 Volts COLLECTOR CURRENT, I C, (PERES) OUTPUT CHARACTERISTICS V GE = 2V VOLTAGE, V CE, (VOLTS) 2 9 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS V GE = 5V T j = 5 C COLLECTOR-CURRENT, I C, (PERES) 2 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS I C = 2A I C = A I C = 4A GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER CURRENT, I E, (PERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS V GE = 5V T j = 5 C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) 3 2 V GE = V CAPACITANCE VS. V CE C ies C oes - V CC = 6V C res R G =.8Ω T j = 5 C VOLTAGE, V CE, (VOLTS) COLLECTOR CURRENT, I C, (PERES) SWITCHING TIME, (ns) 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS t d(off) t d(on) t f t r SWITCHING TIME VS. GATE RESISTANCE REVERSE RECOVERY CHARACTERISTICS GATE CHARGE VS. V GE SWITCHING TIME, (ns) t d(off) GATE RESISTANCE, R G, (Ω) t d(on) t f t r V CC = 6V I C = A T j = 5 C REVERSE RECOVERY, I rr (A), t rr (ns) 3 2 V CC = 6V R G =.8Ω T j = 5 C I rr t rr EMITTER CURRENT, I E, (PERES) GATE-EMITTER VOLTAGE, V GE, (VOLTS) I C = A V CC = 6V GATE CHARGE, Q G, (nc) 6/ Rev. 3 5

7 CMDXL-24S Amperes/2 Volts SWITCHING LOSS VS. COLLECTOR CURRENT SWITCHING LOSS VS. GATE RESISTANCE REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT SWITCHING LOSS, E on, E off, (mj/pulse) 3 2 V CC = 6V R G =.8Ω T j = 5 C L s = 5nH E on SWITCHING LOSS, E on, E off, (mj/pulse) 3 2 V CC = 6V I C = A T j = 5 C L s = 5nH E on REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 3 2 V CC = 6V R G =.8Ω T j = 5 C L s = 5nH E rr E off COLLECTOR CURRENT, I C, (PERES) - GATE RESISTANCE, R G, (Ω) E off EMITTER CURRENT, I E, (PERES) REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 3 2 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE V CC = 6V I C = A T j = 5 C L s = 5nH E rr - GATE RESISTANCE, R G, (Ω) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.2 C/W (IGBT) R th(j-c) =.38 C/W (FWDi) TIME, (s) / Rev. 3

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