Smart Highside High Current Power Switch

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1 Data Sheet BTS555-1TMB Smart Highside High Current Power Switch Features Overload protection Current limitation Short circuit protection Over temperature protection Over voltage protection (including load dump) Clamp of negative voltage at output Fast deenergizing of inductive loads 1 ) Low ohmic inverse current operation Reversave (Reverse battery protection) Diagnostic feedback with load current sense Open load detection via current sense Loss of bb protection 2 ) Electrostatic discharge (ESD) protection Green product (RoHS compliant) AEC qualified Application Power switch with current sense diagnostic feedback for 12 DC grounded loads Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads Replaces electromechanical relays, fuses and discrete circuits Reversave Product Summary Overvoltage protection bb(az) 62 Output clamp ON(CL) 42 Operating voltage bb(on) On-state resistance RON 6. mω Load current (O) IL(O) 7 A Short circuit current limitation IL(SC) 13 A Current sense ratio IL : I 14 PG-TO General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 1 Standard 7 4 & Tab oltage source Overvoltage protection Current limit Gate protection R bb + bb 3 ESD oltage sensor Logic Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output oltage detection Current Sense 1,2,6,7 I L Load I Temperature sensor 5 I PROFET Load GND R Logic GND 1 ) With additional external diode. 2 ) Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Page 1of April-27

2 Data Sheet BTS555-1TMB Pin Symbol Function 1 O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3 ) 2 O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) 3 I Input; has an internal pull up; activates the power switch in case of short to ground 4 bb + Supply voltage; positive power supply voltage; tab and pin 4 are internally shorted; in high current applications use the tab 4). 5 S Sense Output; Diagnostic feedback; provides a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) 6 O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) 7 O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (over voltage protection see page 4) bb 42 Supply voltage for short circuit protection, bb 34 T j,start = C: (see diagram on page 1) Load current (short circuit current, see page 5) I L self-limited A Load dump protection LoadDump = A + s, A = R ) I = 2 Ω, R L =.54 Ω, t d = 2 ms, 6 ) Load dump 75, = open or grounded Operating temperature range T j C Storage temperature range T stg Power dissipation (DC), T C 25 C P tot 17 W Inductive load switch-off energy dissipation, single pulse bb = 12, T j,start = 15 C, T C = 15 C const., E AS 1.5 J I L = 2 A, Z L = 7.5 mh, Ω, see diagrams on page 1 Electrostatic discharge capability (ESD) ESD 4 k Human Body Model acc. MIL-STD883D, method and ESD assn. std. S , C = 1 pf, R = 1.5 kω Current through input pin (DC) Current through current sense status pin (DC) I I +15, , -25 ma see internal circuit diagrams on page 8 and 9 3 ) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4 ) Otherwise add up to.7 mω (depending on used length of the pin) to the R ON if the pin is used instead of the tab. 5 ) R I = internal resistance of the load dump test pulse generator. 6 ) Load dump is setup without the DUT connected to the generator per O and D Infineon Technologies AG Page 2 21-April-27

3 Thermal Characteristics Data Sheet BTS555-1TMB Parameter and Conditions Symbol alues Unit min typ max Thermal resistance chip - case: 7 R thjc ).75 K/W junction - ambient (free air): R thja 6 SMD version, device on PCB 8 ) : 33 4 Electrical Characteristics Parameter and Conditions Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) I L = 2 A, T j = 25 C: R ON =, I L = 2 A, T j = 15 C: I L = 9 A, T j = 15 C: 1.7 bb = 6 9), I L = 2 A, T j = 15 C: R ON(Static) 1 17 Nominal load current 1 ) (Tab to pins 1, 2, 6, 7) I L(O) 55 7 A O /6.7: ON =.5, Tc = 85 C 11 ) Nominal load current 1), device on PCB 8) T A = 85 C, T j 15 C ON.5, I L(NOM) A Maximum load current in resistive range (Tab to pins 1, 2, 6, 7) see diagram on page 13 ON = 1.8, Tc = 25 C: ON = 1.8, Tc = 15 C: Turn-on time 12 ) I to 9% : Turn-off time I to 1% : R L = 1 Ω, T j = C Slew rate on 12) (1 to 3% ) R L = 1 Ω, T J = 25 C Slew rate off 12) (7 to 4% ) R L = 1 Ω, T J = 25 C I L(Max) t on t off mω A µs d/dt on.7 /µs -d/dt off 1.1 /µs 7 ) Thermal resistance R thch case to heatsink (about K/W with silicone paste) not included! 8 ) Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7µm thick) copper area for bb connection. PCB is vertical without blown air. 9 ) Decrease of bb below 1 causes slowly a dynamic increase of R ON to a higher value of R ON(Static). As long as b > b(u) max, R ON increase is less than 1 % per second for T J < 85 C. 1 ) not subject to production test, specified by design 11 ) T J is about 15 C under these conditions. 12 ) See timing diagram on page 14. Infineon Technologies AG Page 3 21-April-27

4 Data Sheet BTS555-1TMB Parameter and Conditions Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Inverse Load Current Operation On-state resistance (Pins 1, 2, 6, 7 to pin 4) b = 12, I L = - 2 A T j = 25 C: see diagram on page 1 T j = 15 C: Nominal inverse load current (Pins 1, 2, 6, 7 to Tab) ON = -.5, Tc = 85 C 11 Drain-source diode voltage (out I > bb) L = - 2 A, I =, Tj = +15 C R ON(inv) mω I L(inv) 55 7 A - ON.6 Operating Parameters Operating voltage ( = ) 13 ) bb(on) Under voltage shutdown 14 ) b(u) Under voltage start of charge pump see diagram page 15 b(ucp) Over voltage protection 15 ) I bb = 15 ma Standby current I = T j =-4 C: T j = C: T j = C: T j = 15 C: Z, 6 62 I bb(off) µa 13 ) If the device is turned on before a bb -decrease, the operating voltage range is extended down to b(u). For all voltages the device provides embedded protection functions against overtemperature and short circuit. 14 ) b = bb - see diagram on page 7. When b increases from less than b(u) up to b(ucp) = 5 (typ.) the charge pump is not active and bb ) See also ON(CL) in circuit diagram on page 9. Infineon Technologies AG Page 4 21-April-27

5 Data Sheet BTS555-1TMB Parameter and Conditions Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Protection Functions 16) Short circuit current limit (Tab to pins 1, 2, 6, 7) ON = 12, time until shutdown max. 35 µs T c =-4 C: T c =25 C: T c =+15 C: Short circuit shutdown delay after input current positive slope, ON > ON(SC) min. value valid only if input "off-signal" time exceeds 3 µs Output clamp 17 ) I L = 4 ma: (inductive load switch off) see diagram Ind. and overvolt. output clamp page 8 Output clamp (inductive load switch off) at = bb - ON(CL) (e.g. over voltage) I L = 4 ma I L(SC) I L(SC) I L(SC) t d(sc) 8 35 µs - (CL) ON(CL) Short circuit shutdown detection voltage (pin 4 to pins 1,2,6,7) ON(SC) 6 Thermal overload trip temperature T jt 15 C Thermal hysteresis T jt 1 K Reverse Battery Reverse battery voltage 18 ) - bb 16 On-state resistance (Pins 1,2,6,7 to pin 4) T j = 25 C: R ON(rev) bb = -12, =, I L = - 2 A, R = 1 kω T j = 15 C: mω Integrated resistor in bb line R bb 12 Ω A 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as outside normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) This output clamp can be "switched off" by using an additional diode at the -Pin (see page 8). If the diode is used, is clamped to bb - ON(CL) at inductive load switch off. 18 ) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (I = I = ) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG Page 5 21-April-27

6 Data Sheet BTS555-1TMB Parameter and Conditions Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Diagnostic Characteristics Current sense ratio, I L = 9 A,T j =-4 C: static on-condition, T j =25 C: k IL = I L : I, T j =15 C: ON < ), I L = 2 A,T j =-4 C: < - 5, T j =25 C: b > 4. T j =15 C: see diagram on page 12 I L = 1 A,T j =-4 C: T j =25 C: T j =15 C: I L = 4 A,T j =-4 C: T j =25 C: T j =15 C: I = by I = (e.g. during deenergizing of inductive loads): k IL Sense current saturation I,lim 6.5 ma Current sense leakage current I = : =, I L : I (LL) I (LH) µa Current sense over voltage protection T j =-4 C: Z, 6 I bb = 15 ma T j = C: Current sense settling time 2 ) t s() 5 µs Input Input and operating current (see diagram page 13) I (on) ma grounded ( = ) Input current for turn-off 21 ) I (off) 8 µa 19 ) If ON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see I,lim. 2 ) not subject to production test, specified by design 21 ) We recommend the resistance between and GND to be less than.5 kω for turn-on and more than 5kΩ for turn-off. Consider that when the device is switched off (I = ) the voltage between and GND reaches almost bb. Infineon Technologies AG Page 6 21-April-27

7 Data Sheet BTS555-1TMB Truth Table Input current Output Current Sense Remark Normal operation ery high load current Currentlimitation Short circuit to GND Over temperature Short circuit to bb Open load Negative output voltage clamp Inverse load current level level I L H L H nominal H H I, lim H H L H L L L L H L L H H H <nominal 22 ) L Z 23 ) H H L L L H H H =I L / k ilis, up to I =I,lim up to ON = ON(Fold back) I no longer proportional to I L ON > ON(Fold back) if ON > ON(SC), shutdown will occur L = "Low" Level; H = "High" Level Over temperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms b I bb 4 bb ON R ON measurement layout l 5.5mm I L bb 3 PROFET 1,2,6,7 R I b 5 I D S R Two or more devices can easily be connected in parallel to increase load current capability. bb force Out Force Sense contacts contacts (both out pins parallel) Typical RON for SMD version is about.2 mω less than straight leads due to l 2 mm 22 ) Low ohmic short to bb may reduce the output current I L and can thus be detected via the sense current I. 23 ) Power Transistor "OFF", potential defined by external impedance. Infineon Technologies AG Page 7 21-April-27

8 Data Sheet BTS555-1TMB Input circuit (ESD protection) Current sense status output b Z, I ZD R bb bb bb R bb I ZD Z, R When the device is switched off (I = ) the voltage between and GND reaches almost bb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. Z, = 66 (typ). Short circuit detection Fault Condition: ON > ON(SC) (6 typ.) and t> t d(sc) ( µs). Z, = 66 (typ.), R = 1 kω nominal (or 1 kω /n, if n devices are connected in parallel). I S = I L /k ilis can be driven only by the internal circuit as long as out - > 5. If you want measure load currents up to I L(M), R should be less than bb - 5 I L(M) / K ilis. Note: For large values of R the voltage can reach almost bb. See also over voltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and over voltage output clamp + bb + bb Z1 ON ON ZG Logic unit Short circuit detection D S PROFET ON is clamped to ON(Cl) = 42 typ. At inductive load switch-off without D S, is clamped to (CL) = -19 typ. via ZG. With D S, is clamped to bb - ON(CL) via Z1. Using D S gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19 referring to the potential the device will switch on, if diode DS is not used. Infineon Technologies AG Page 8 21-April-27

9 Data Sheet BTS555-1TMB Over voltage protection of logic part + bb R Z, Z, bb R Logic bb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. ( ZL < 72 or Zb < 3 if R =). For higher clamp voltages currents at and have to be limited to 25 ma. ersion a: R R Signal GND PROFET Z, R bb = 12 Ω typ., Z, = Z, = 66 typ., R = 1 kω nominal. Note that when over voltage exceeds 71 typ. a voltage above 5 can occur between and GND, if R, Z, are not used. bb bb PROFET ZL Reverse battery protection - bb ersion b: R bb bb bb R Logic Power Transistor PROFET D S R L Zb D R R Signal GND Power GND R 1 kω, R = 1 kω nominal. Add R for reverse battery protection in applications with bb above 16 18) ; recommended value: R 1.1A bb - 12 if D S is not used (or + 1 = R R.1A bb - 12 if D S is used). = R To minimize power dissipation at reverse battery operation, the summarized current into the and pin should be about 12mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R and R. Note that there is no reverse battery protection when using a diode without additional Z-diode ZL, Zb. ersion c: Sometimes a necessary voltage clamp is given by non inductive loads R L connected to the same switch and eliminates the need of clamping circuit: bb bb PROFET R L Infineon Technologies AG Page 9 21-April-27

10 Data Sheet BTS555-1TMB Inverse load current operation bb bb + PROFET - I L Maximum allowable load inductance for a single switch off L = f (I L ); T j,start = 15 C, bb = 12, R L = Ω L [µh] I R The device is specified for inverse load current operation ( > bb > ). The current sense feature is not available during this kind of operation (I = ). With I = (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on ( = ), this power dissipation is decreased to the much lower value R ON() * I 2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! Inductive load switch-off energy dissipation E bb E AS A 1 A 1 A 1 A I L [A] Externally adjustable current limit bb I bb PROFET R i (t) L L Z L { R L E Load E L E R If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by I S *R. After a delay time defined by R *C T1 will be reset. The device is turned on again, the short circuit current is defined by I L(SC) and the device is shut down after t d(sc) with latch function. Energy stored in load inductance: bb bb E L = 1 /2 L I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is E AS = E bb + E L - E R = ON(CL) i L (t) dt, R PROFET R load with an approximate solution for R L > Ω: E AS = IL L IL RL ( 2 R bb + (CL) ) ln (1+ L (CL) ) Signal Signal GND T1 C T2 R Power GND Infineon Technologies AG Page 1 21-April-27

11 Data Sheet BTS555-1TMB Options Overview Type Over temperature protection with hysteresis Tj >15 C, latch function 24 ) Tj >15 C, with auto-restart on cooling Short circuit to GND protection with over temperature shutdown switches off when ON >6 typ. (when first turned on after approx. 18 µs) BTS555-1TMB Over voltage shutdown - Output negative voltage transient limit to bb - ON(CL) X to = -19 typ X 25 ) X X X 24 ) Latch except when bb - < ON(SC) after shutdown. In most cases = after shutdown ( only if forced externally). So the device remains latched unless bb < ON(SC) (see page 5). No latch between turn on and t d(sc). 25 ) Can be "switched off" by using a diode D S (see page 8) or leaving open the current sense output. Infineon Technologies AG Page April-27

12 Data Sheet BTS555-1TMB Characteristics Current sense versus load current: I = f(i L ), T J = C 7 Current sense ratio: I = f(i L ), T J = 25 C max min max typ 1 12 min I [ma] I L [A] k IL I L [A] Current sense ratio: K IL = f(i L ),T J = -4 C k ilis 3 Current sense ratio: K IL = f(i L ),T J = 15 C max 18 max typ 12 typ 12 1 min min I L [A] k ilis I L [A] Infineon Technologies AG Page April-27

13 Data Sheet BTS555-1TMB Typ. current limitation characteristic I L = f (ON, T j ) I L [A] 45 4 Typ. input current I = f ( b ), b = bb - I [ma] ON > ON(SC) only for t < t d(sc) (otherwise immediate shutdown) T J = 25 C T J = - 4 C T J = 15 C ON(FB) ON [] In case of ON > ON(SC) (typ. 6 ) the device will be switched off by internal short circuit detection. b [] Typ. on-state resistance R ON = f ( bb, T j ); I L = 2 A; = R ON [mohm] static dynamic Tj = 15 C 85 C 25 C -4 C bb [] Infineon Technologies AG Page April-27

14 Data Sheet BTS555-1TMB Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load: I I d/dtoff 9% t on 1% d/dton t off I L tslc() tslc() I L Load 1 Load 2 I t son() t soff() t I t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3d: Short circuit: shut down by short circuit detection, reset by I =. Figure 2b: Switching motors and lamps: I I I L I L(SCp) t d(sc) I IL I >> = t I Sense current saturation can occur at very high inrush currents (see I,lim on page 6). t Shut down remains latched until next reset via input. Infineon Technologies AG Page April-27

15 Data Sheet BTS555-1TMB Figure 4e: Over temperature Reset if T j <T jt I I Auto Restart T j t Figure 6f: Under voltage restart of charge pump, over voltage clamp = 6 4 dynamic, short Undervoltage not below b(u) ON(CL) 2 I = ON(CL) b(u) b(ucp) Infineon Technologies AG Page April-27

16 Data Sheet BTS555-1TMB Package and Ordering Code All dimensions in mm Standard: PG-TO Sales Code BTS555-1TMB 1 ± ±.2 A ) 1.27 ±.1 17 ± ±.3 1) ± ± ± ± ±.3 7 x.6 ±.1 C 3.7±.3.5 ± x M A C 8.4 ± ±.4 1) Typical Metal surface min. X = 7.25, Y = 12.3 All metal surfaces tin plated, except area of cut. Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-2). Infineon Technologies AG Page April-27

17 Data Sheet BTS555-1TMB Revision History ersion Date Changes Rev Limits of parameter t on changed to min 8µs / max 4µs Rev Initial version of data sheet. Green (RoHS compliant) variant of BTS65P Infineon Technologies AG Page April-27

18 Edition 21-April-27 Published by Infineon Technologies AG Munich, Germany Infineon Technologies AG 21. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Smart Highside High Current Power Switch

Smart Highside High Current Power Switch Features Overload protection Current limitation Short circuit protection Over temperature protection Over voltage protection (including load dump) Clamp of negative