IXTT3N200P3HV IXTH3N200P3HV
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1 Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous V M Transint V I = C. A I = C. A I M = C, Puls Width Limitd by M 9. A P = C W C M C T stg C T L Maximum Lad Tmpratur for Soldring C T SOL Plastic Body for s C M d Mounting Torqu./ Nm/lb.in Wight TO-HV g TO-7HV g ( BS = V, I = A V (th) =, I = A.. V I GSS = V, = V na I SS = S, = V A = C μa TO-7HV (IXTH) G S Faturs High Blocking Voltag High Voltag Packags Advantags Easy to Mount Spac Savings High Powr nsity Applications (Tab) G = Gat = rain S = Sourc Tab = rain High Voltag Powr Supplis Capacitor ischarg Applications Puls Circuits Lasr and X-Ray Gnration Systms R S(on) = V, I =.A, Not IXYS CORPORATION, All Rights Rsrvd S7(/)
2 ( g fs = V, I =.A, Not.. S C iss pf C oss = V, = V, f = MHz pf C rss pf R Gi Gat Input Rsistanc. t d(on) Rsistiv Switching Tims ns t r 7 ns = V, = V, I = I t d(off) 7 ns R t G = (Extrnal) f ns Q g(on) 7 nc Q gs = V, = kv, I = I nc Q gd 9 nc R thjc. C/W R thcs TO-7HV. C/W TO-HV Outlin L L E A L L C A PINS: - Gat - Sourc - rain C A H b E Sourc-rain iod ( I S = V A I SM Rptitiv, Puls Width Limitd by M A V S I F = I S, = V, Not. V t rr ns I F =.A, -di/dt = A/ s Q RM nc V I R = V, = V RM. A TO-7HV Outlin E A R P A Q S L A X A L P E E X E Not:. Puls tst, t s, duty cycl, d %. c b X PINS: - Gat - Sourc, - rain b X AVANCE TECHNICAL INFORMATION Th product prsntd hrin is undr dvlopmnt. Th Tchnical Spcifications offrd ar drivd from a subjctiv valuation of th dsign, basd upon prior knowldg and xprinc, and constitut a "considrd rflction" of th anticipatd rsult. IXYS rsrvs th right to chang limits, tst conditions, and dimnsions without notic. IXYS Rsrvs th Right to Chang Limits, Tst Conditions, and imnsions. IXYS MOSFETs and IGBTs ar covrd,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by on or morof th following U.S. patnts:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
3 Fig.. Output = ºC Fig.. Output = ºC... = V 7V.. = V V I - Amprs... V.. V - Volts I - Amprs Volts V V. Fig.. R S(on) Normalizd to I =.A Valu vs. Junction Tmpratur. Fig.. R S(on) Normalizd to I =.A Valu vs. rain Currnt RS(on) - Normalizd = V I =.A I =.A RS(on) - Normalizd = V = ºC = ºC grs Cntigrad I - Amprs. Fig.. Maximum rain Currnt vs. Cas Tmpratur. Fig.. Input Admittanc.... I - Amprs.. I - Amprs... = ºC ºC -ºC grs Cntigrad Volts IXYS CORPORATION, All Rights Rsrvd
4 Fig. 7. Transconductanc 9 Fig.. Forward Voltag rop of Intrinsic iod 7 = - ºC 7 g f s - Simns ºC ºC IS - Amprs = ºC = ºC... I - Amprs V S - Volts Fig. 9. Gat Charg, Fig.. Capacitanc = kv f = MHz VGS - Volts I =.A I G = ma Capacitanc - PicoFarads, C iss C oss C rss 7 Q G - NanoCoulombs Fig.. Maximum Transint Thrmal Impdanc - Volts Fig.. Forward-Bias Saf Oprating Ara µs. Fig. Maximum Transint Thrmal Impdanc aaaa µs I - Amprs. R S(on) Limit ms ms ms Z(th)JC - ºC / W. = ºC = ºC Singl Puls C,, - Volts. Puls Width - Sconds IXYS Rsrvs th Right to Chang Limits, Tst Conditions, and imnsions. IXYS REF: T_NPHV (H7-AT) --
5 isclaimr Notic - Information furnishd is blivd to b accurat and rliabl. Howvr, usrs should indpndntly valuat th suitability of and tst ach product slctd for thir own applications. Littlfus products ar not dsignd for, and may not b usd in, all applications. Rad complt isclaimr Notic at
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XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
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9V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching Advance Technical Information IXYNN9C3H S = 9V 9 = 7A (sat).7v t fi(typ) = ns E Symbol Test Conditions Maximum Ratings S = C to C 9
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