20-V N-Channel 1.8-V (G-S) MOSFET
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1 -V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V at V G =. V at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara Profil (.6 mm) and On-Rsistanc Pr Footprint Ara APPLICATION PA, Battry and Load witch for Portabl vics RoH COMPLIANT MICRO FOOT Bump id Viw Backsid Viw 3 84 xxx G 4 G vic Marking: 84 xxx = at/lot Tracability Cod Ordring Information: i84b-t-e (Lad (Pb)-fr) N-Channl MOFET ABOLUTE MAXIMUM RATING T A = C, unlss othrwis notd Paramtr ymbol s tady tat Unit rain-ourc Voltag V Gat-ourc Voltag V G ± 8 V Continuous rain Currnt (T J = C) a T A = C I T A = 7 C A Pulsd rain Currnt I M 3 Continuous ourc Currnt (iod Conduction) a I.3. T A = C Maximum Powr issipation a P T A = 7 C W Oprating Junction and torag Tmpratur Rang T J, T stg - to Packag Rflow Conditions b IR/Convction 6 C THERMAL REITANCE RATING Paramtr ymbol Typical Maximum Unit Maximum Junction-to-Ambint a t s 3 4 R thja tady tat 7 8 C/W Maximum Junction-to-Foot (rain) tady tat R thjf 6 a. urfac Mountd on " x " FR4 board. b. Rfr to IPC/JEEC (J-T-C), no manual or hand soldring. -88-Rv. C, 8-p-8
2 PECIFICATION T J = C, unlss othrwis notd Paramtr ymbol Tst Conditions Min. Typ. Max. Unit tatic Gat Thrshold Voltag V G(th) V = V G, I = µa.4. V Gat-Body Lakag I G V = V, V G = ± 8 V ± na V = V, V G = V Zro Gat Voltag rain Currnt I V = V, V G = V, T J = 7 C µa On-tat rain Currnt a I (on) V V, V G = 4. V A rain-ourc On-tat Rsistanc a R (on) V G =. V, I = A Ω V G = 4. V, I = A.3.37 V G =.8 V, I = A.3.43 Forward Transconductanc a g fs V = V, I = A iod Forward Voltag a V I = A, V G = V.8. V ynamic b Total Gat Charg Q g 7 6 Gat-ourc Charg Q gs V = V, V G = 4. V, I = A nc Gat-rain Charg Q gd 3. Gat Rsistanc R g f = MHz Ω Turn-On lay Tim t d(on) 3 4 Ris Tim t r V = V, R L = Ω 4 7 Turn-Off lay Tim t d(off) I A, V GEN = 4. V, R g = 6 Ω 4 ns Fall Tim t f 7 ourc-rain Rvrs Rcovry Tim t rr I F = A, di/dt = A/µs 3 6 a. Puls tst; puls width 3 µs, duty cycl %. b. Guarantd by dsign, not subjct to production tsting. trsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. TYPICAL CHARACTERITIC C, unlss othrwis notd 3 3 V G = thru V - rain Currnt (A) I. V I - rain Currnt (A) T C = C V 3 4 V - rain-to-ourc Voltag (V) Output Charactristics C - C V G - Gat-to-ourc Voltag (V) Transfr Charactristics -88-Rv. C, 8-p-8
3 TYPICAL CHARACTERITIC C, unlss othrwis notd.6 - On-Rsistanc (Ω) R (on) V G =.8 V V G =. V V G = 4. V C - Capacitanc (pf) C oss C iss. 3 I - rain Currnt (A) On-Rsistanc vs. rain Currnt C rss V - rain-to-ourc Voltag (V) Capacitanc.4 - Gat-to-ourc Voltag (V) V G 4 3 V = V I = A R (on) - On-Rsistanc (Normalizd) V G = 4. V I = A Q g - Total Gat Charg (nc) Gat Charg T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur.8 - ourc Currnt (A) I T J = C T J = C - On-Rsistanc (Ω) R (on).6.4. I = A V - ourc-to-rain Voltag (V) ourc-rain iod Forward Voltag. 3 4 V G - Gat-to-ourc Voltag (V) On-Rsistanc vs. Gat-to-ourc Voltag -88-Rv. C, 8-p-8 3
4 TYPICAL CHARACTERITIC C, unlss othrwis notd.. I = µa 8 6 Varianc (V) V G(th) Powr (W) T J - Tmpratur ( C) Thrshold Voltag... Tim (s) ingl Puls Powr, Junction-to-Ambint Limitd by R (on) * I M Limitd - rain Currnt (A) I. I (on) Limitd T A = C ingl Puls BV Limitd.. af Oprating Ara P(t) =. P(t) =. P(t) =. P(t) = P(t) = C V - rain-to-ourc Voltag (V) * V G > minimum V G at which R (on) is spcifid Normalizd Effctiv Transint Thrmal Impdanc uty Cycl =.... P M. t t t.. uty Cycl, = t. Pr Unit Bas = R thja = 7 C/W 3. T ingl Puls JM - T A = P M Z (t) thja 4. urfac Mountd quar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Ambint 4-88-Rv. C, 8-p-8
5 TYPICAL CHARACTERITIC C, unlss othrwis notd Normalizd Effctiv Transint Thrmal Impdanc. uty Cycl = ingl Puls -3 - quar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Foot Rv. C, 8-p-8
6 PACKAGE OUTLINE MICRO FOOT: 4-BUMP ( x,.8 mm PITCH) 4 x φ.3.3 Not 3 oldr Mask φ.4 A A A ilicon Bump Not b iamrtr Rcommndd Land 84 XXX E Mark on Backsid of i Nots (Unlss Othrwis pcifid):. Lasr mark on th silicon di back, coatd with a thin mtal.. Bumps ar 9./3.8/.7 n/ag/cu. 3. Non-soldr mask dfind coppr landing pad. 4. Th flat sid of wafrs is orintd at th bottom. im. Millimtrs a Inchs Min. Max. Min. Max. A A A b E a. Us millimtrs as th primary masurmnt. maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for ilicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s Rv. C, 8-p-8
7 Lgal isclaimr Notic Vishay isclaimr All product spcifications and data ar subjct to chang without notic. Vishay Intrtchnology, Inc., its affiliats, agnts, and mploys, and all prsons acting on its or thir bhalf (collctivly, Vishay ), disclaim any and all liability for any rrors, inaccuracis or incompltnss containd hrin or in any othr disclosur rlating to any product. Vishay disclaims any and all liability arising out of th us or application of any product dscribd hrin or of any information providd hrin to th maximum xtnt prmittd by law. Th product spcifications do not xpand or othrwis modify Vishay s trms and conditions of purchas, including but not limitd to th warranty xprssd thrin, which apply to ths products. No licns, xprss or implid, by stoppl or othrwis, to any intllctual proprty rights is grantd by this documnt or by any conduct of Vishay. Th products shown hrin ar not dsignd for us in mdical, lif-saving, or lif-sustaining applications unlss othrwis xprssly indicatd. Customrs using or slling Vishay products not xprssly indicatd for us in such applications do so ntirly at thir own risk and agr to fully indmnify Vishay for any damags arising or rsulting from such us or sal. Plas contact authorizd Vishay prsonnl to obtain writtn trms and conditions rgarding products dsignd for such applications. Product nams and markings notd hrin may b tradmarks of thir rspctiv ownrs. ocumnt Numbr: 9 Rvision: 8-Jul-8
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