N-Channel 20 V (D-S) MOSFET
|
|
- Violet Crystal Price
- 5 years ago
- Views:
Transcription
1 N-Channl V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.).37 at V G =.5 V 7.5 nc.33 at V G =.5 V. at V G =.8 V 5 Bump id Viw MICRO FOOT G Backsid Viw FEATURE TrnchFET Powr MOFET Ultra-small.5 mm x mm Maximum Outlin Ultra-thin.59 mm Maximum Hight Matrial catgorization: For dfinitions of complianc plas s /doc?999 APPLICATION Load witch Battry Managmnt Boost Convrtr 3 8 XXX 5 vic Marking: 8 xxx = at/lot Tracability Cod Ordring Information: i8b-t-e (Lad (Pb)-fr and Halogn-fr) G N-Channl MOFET ABOLUTE MAXIMUM RATING (T A = 5 C, unlss othrwis notd) Paramtr ymbol Limit Unit rain-ourc Voltag V V Gat-ourc Voltag V G ± 8 T C = 5 C T C = 7 C 3.5 Continuous rain Currnt (T J = 5 C) I T A = 5 C 7.8 a, b T A = 7 C. a, b A Pulsd rain Currnt (t = 3 µs) I M 3 T C = 5 C Continuous ourc-rain iod Currnt I T A = 5 C.3 a, b T C = 5 C 3 T C = 7 C 8. Maximum Powr issipation P W T A = 5 C.77 a, b T A = 7 C.77 a, b Oprating Junction and torag Tmpratur Rang T J, T stg - 55 to 5 C Packag Rflow Conditions c IR/Convction Nots: a. urfac mountd on " x " FR board. b. t = s. c. Rfr to IPC/JEEC (J-T-), no manual or hand soldring. d. Cas in dfind as th top surfac of th packag.. T C = 5 C packag limitd Rv. A, 3-Apr- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
2 THERMAL REITANCE RATING Paramtr ymbol Typical Maximum Unit Maximum Junction-to-Ambint a, b R thja 37 5 Maximum Junction-to-Cas (rain) c tady tat R thjc C/W Nots: a. urfac mountd on " x " FR board. b. Maximum undr stady stat conditions is 85 C/W. c. Cas is dfind as top surfac of th packag. rain-ourc On-tat Rsistanc a R (on) PECIFICATION (T J = 5 C, unlss othrwis notd) Paramtr ymbol Tst Conditions Min. Typ. Max. Unit tatic rain-ourc Brakdown Voltag V V G =, I = 5 µa V V Tmpratur Cofficint V /T J 8 I = 5 µa V G(th) Tmpratur Cofficint V G(th) /T J - 3 mv/ C Gat-ourc Thrshold Voltag V G(th) V = V G, I = 5 µa..85 V Gat-ourc Lakag I G V = V, V G = ± 8 V ± na V = V, V G = V Zro Gat Voltag rain Currnt I V = V, V G = V, T J = 7 C µa On-tat rain Currnt a I (on) V 5 V, V G =.5 V 5 A V G =.5 V, I = A.8.37 V G =.5 V, I = A..33 V G =.8 V, I = A.3. Forward Transconductanc a g fs V = V, I = A ynamic b Input Capacitanc C iss 83 Output Capacitanc C oss V = V, V G = V, f = MHz pf Rvrs Transfr Capacitanc C rss V = V, V G = 8 V, I = A 3 Total Gat Charg Q g 7.5 nc Gat-ourc Charg Q gs V = V, V G =.5 V, I = A. Gat-rain Charg Q gd.8 Gat Rsistanc R g V G =. V, f = MHz 3. Turn-On lay Tim t d(on) 7 5 Ris Tim t r V = V, R L = 8 Turn-Off lay Tim t d(off) I A, V GEN =.5 V, R g = 3 ns Fall Tim t f Turn-On lay Tim t d(on) 5 Ris Tim t r V = V, R L = 7 35 Turn-Off lay Tim t d(off) I A, V GEN = 8 V, R g = 5 5 ns Fall Tim t f -978-Rv. A, 3-Apr- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
3 PECIFICATION (T J = 5 C, unlss othrwis notd) Paramtr ymbol Tst Conditions Min. Typ. Max. Unit rain-ourc Body iod Charactristics Continuous ourc-rain iod Currnt I T C = 5 C Puls iod Forward Currnt I M 3 A Body iod Voltag V I = A, V G =.7. V Body iod Rvrs Rcovry Tim t rr 5 3 ns Body iod Rvrs Rcovry Charg Q rr 5 nc I F = A, di/dt = A/µs, T J = 5 C Rvrs Rcovry Fall Tim t a 8 ns Rvrs Rcovry Ris Tim t b 7 Nots: a. Puls tst; puls width 3 µs, duty cycl %. b. Guarantd by dsign, not subjct to production tsting. trsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability Rv. A, 3-Apr- 3 THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
4 TYPICAL CHARACTERITIC (5 C, unlss othrwis notd) 3 V G = 5 V thru V 5 V G =.5 V 8 I - rain Currnt (A) 5 I - rain Currnt (A) T C = 5 C 5 V G = V T C = 5 C T C = - 55 C V - rain-to-ourc Voltag (V) Output Charactristics V G - Gat-to-ourc Voltag (V) Transfr Charactristics R (on) - On-Rsistanc (Ω) V G =.8 V V G =.5 V V G =.5 V C - Capacitanc (pf) 9 3 C oss C iss C rss I - rain Currnt (A) On-Rsistanc vs. rain Currnt and Gat Voltag 8 8 V - rain-to-ourc Voltag (V) Capacitanc. V G - Gat-to-ourc Voltag (V) I = A V = 5 V V = V V = V R (on) - On-Rsistanc (Normalizd)....8 I = A V G =.5 V,.8 V V G =.5 V Q g - Total Gat Charg (nc) Gat Charg T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur -978-Rv. A, 3-Apr- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
5 TYPICAL CHARACTERITIC (5 C, unlss othrwis notd).8 I = A I - ourc Currnt (A) T J = 5 C T J = 5 C R (on) - On-Rsistanc (Ω)... T J = 5 C T J = 5 C V - ourc-to-rain Voltag (V) ourc-rain iod Forward Voltag V G - Gat-to-ourc Voltag (V) On-Rsistanc vs. Gat-to-ourc Voltag V G(th) (V).5. I = 5 μa Powr (W) T J - Tmpratur ( C) Thrshold Voltag... Puls (s) ingl Puls Powr, Junction-to-Ambint Limitd by R (on) * I - rain Currnt (A). T A = 5 C μs ms ms ms, s s C BV Limitd.. V - rain-to-ourc Voltag (V) * V G > minimum V G at which R (on) is spcifid af Oprating Ara, Junction-to-Ambint -978-Rv. A, 3-Apr- 5 THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
6 TYPICAL CHARACTERITIC (5 C, unlss othrwis notd) 5 I - rain Currnt (A) 8 Packag Limitd Powr issipation (W) T C - Ambint Tmpratur ( C) Currnt rating* T C - Cas Tmpratur ( C) Powr rating * Th powr dissipation P is basd on T J(max) = 5 C, using junction-to-cas thrmal rsistanc, and is mor usful in sttling th uppr dissipation limit for cass whr additional hatsinking is usd. It is usd to dtrmin th currnt rating, whn this rating falls blow th packag limit Rv. A, 3-Apr- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
7 TYPICAL CHARACTERITIC (5 C, unlss othrwis notd) Normalizd Effctiv Transint Thrmal Impdanc. uty Cycl =.5... ingl Puls.5.. urfac Mountd quar Wav Puls uration (s) Nots: Normalizd Thrmal Transint Impdanc, Junction-to-Ambint P M t t t. uty Cycl, = t. Pr Unit Bas = R thja = 85 C/W 3. T JM - T A = P M Z (t) thja Normalizd Effctiv Transint Thrmal Impdanc uty Cycl = ingl Puls quar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Cas -978-Rv. A, 3-Apr- 7 THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
8 PACKAGE OUTLINE MICRO FOOT: -BUMP (.5 mm PITCH) x Ø. to. Not 3 oldr Mask ~ Ø.5 A B C Bump Not A A A Rcommndd Land x Ø b 8 XXX G s s Mark on Backsid of i s E s Nots (unlss othrwis spcifid):. All dimnsions ar in millimtrs.. ix () soldr bumps ar lad (Pb)-fr 95.5n, 3.8Ag,.7Cu with diamtr.3 mm to.3 mm. 3. Backsid surfac is coatd with a Ti/Ni/Ag layr.. Non-soldr mask dfind coppr landing pad. 5. is location of pin. im. Millimtrs a Inchs Min. Nom. Max. Min. Nom. Max. A A A b s E Not: a. Us millimtrs as th primary masurmnt. maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for ilicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s /ppg? Rv. A, 3-Apr- THE PROUCT ECRIBE HEREIN AN THI OCUMENT ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT /doc?9
9 Lgal isclaimr Notic Vishay isclaimr ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intrtchnology, Inc., its affiliats, agnts, and mploys, and all prsons acting on its or thir bhalf (collctivly, Vishay ), disclaim any and all liability for any rrors, inaccuracis or incompltnss containd in any datasht or in any othr disclosur rlating to any product. Vishay maks no warranty, rprsntation or guarant rgarding th suitability of th products for any particular purpos or th continuing production of any product. To th maximum xtnt prmittd by applicabl law, Vishay disclaims (i) any and all liability arising out of th application or us of any product, (ii) any and all liability, including without limitation spcial, consquntial or incidntal damags, and (iii) any and all implid warrantis, including warrantis of fitnss for particular purpos, non-infringmnt and mrchantability. tatmnts rgarding th suitability of products for crtain typs of applications ar basd on Vishay s knowldg of typical rquirmnts that ar oftn placd on Vishay products in gnric applications. uch statmnts ar not binding statmnts about th suitability of products for a particular application. It is th customr s rsponsibility to validat that a particular product with th proprtis dscribd in th product spcification is suitabl for us in a particular application. Paramtrs providd in datashts and/or spcifications may vary in diffrnt applications and prformanc may vary ovr tim. All oprating paramtrs, including typical paramtrs, must b validatd for ach customr application by th customr s tchnical xprts. Product spcifications do not xpand or othrwis modify Vishay s trms and conditions of purchas, including but not limitd to th warranty xprssd thrin. Excpt as xprssly indicatd in writing, Vishay products ar not dsignd for us in mdical, lif-saving, or lif-sustaining applications or for any othr application in which th failur of th Vishay product could rsult in prsonal injury or dath. Customrs using or slling Vishay products not xprssly indicatd for us in such applications do so at thir own risk. Plas contact authorizd Vishay prsonnl to obtain writtn trms and conditions rgarding products dsignd for such applications. No licns, xprss or implid, by stoppl or othrwis, to any intllctual proprty rights is grantd by this documnt or by any conduct of Vishay. Product nams and markings notd hrin may b tradmarks of thir rspctiv ownrs. Matrial Catgory Policy Vishay Intrtchnology, Inc. hrby crtifis that all its products that ar idntifid as RoH-Compliant fulfill th dfinitions and rstrictions dfind undr irctiv /5/EU of Th Europan Parliamnt and of th Council of Jun 8, on th rstriction of th us of crtain hazardous substancs in lctrical and lctronic quipmnt (EEE) - rcast, unlss othrwis spcifid as non-compliant. Plas not that som Vishay documntation may still mak rfrnc to RoH irctiv /95/EC. W confirm that all th products idntifid as bing compliant to irctiv /95/EC conform to irctiv /5/EU. Vishay Intrtchnology, Inc. hrby crtifis that all its products that ar idntifid as Halogn-Fr follow Halogn-Fr rquirmnts as pr JEEC J79A standards. Plas not that som Vishay documntation may still mak rfrnc to th IEC 9-- dfinition. W confirm that all th products idntifid as bing compliant to IEC 9-- conform to JEEC J79A standards. Rvision: -Oct- ocumnt Numbr: 9
20-V N-Channel 1.8-V (G-S) MOSFET
-V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara
More information20 V N-Channel 1.8 V (G-S) MOSFET
V N-Channl.8 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Bump id Viw 3 4.37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 G MICRO FOOT Backsid Viw 84 xxx FEATURE TrnchFET Powr MOFET MICRO
More informationN-Channel 20 V (D-S) MOSFET
N-Channl 2 V (-) MOFET i846b PROUCT UMMARY V (V) R (on) () MAX. I (A) Q g (TYP.) 2 mm.37 at V G = 2.5 V 6 7.5 nc.33 at V G = 4.5 V 6.42 at V G =.8 V 5 xxxx xxx Backsid Viw MICRO FOOT.5 x.5 mm 6 5 Bump
More informationP-Channel 30-V (D-S) MOSFET
i443ay PChannl 3V () MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).75 at V G = V 5 3. at V G = 4.5 V.3 O8 FEATURE Halognfr According to IEC 649 Availabl TrnchFET Powr MOFET APPLICATION Notbook Load witch
More informationP-Channel 1.8-V (G-S) MOSFET
i4465ay PChannl.8V (G) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) b Q g (Typ.) 9 at V G = 4.5 V 3.7 8 at V G = 2.5 V 2.4 55 nc 6 at V G =.8 V FEATURE Halognfr According to IEC 624922 Availabl TrnchFET
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channl -V (-) MOFE PROUC UMMARY V (V) R (on) (Ω) I (A) a Q g (yp.).38 at V G = V 33 37.5 nc.5 at V G =.5 V 3 FEAURE Halogn-fr According to IEC 29-2-2 Availabl rnchfe Gn II Powr MOFE % R g and UI
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking
More informationN-Channel 8 V (D-S) MOSFET
N-Channel 8 V (-) MOFET i88b Vishay iliconix PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (TYP.) 8.8 mm xxx xx.54 at V G = 4.5 V 3.5.6 at V G =.5 V 3.3.68 at V G =.8 V 3..86 at V G =.5 V.3.35 at V G =. V
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationDG3537, DG3538, DG3539, DG , 360 MHz, Dual SPST Analog Switches. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS
4, 360 MHz, Dual SPST nalog Switchs DESRIPTION Th DG3537, DG3538, DG3539, DG3540 ar dual SPST analog switchs which oprat from.8 V to 5.5 V singl rail powr supply. Thy ar dsign for audio, vido, and US switching
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.) 8.75 at V G = 6 V a nc. at V G = V a.95 at V G =.5 V 5 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View G Ordering Information: -T-GE
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationG D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationG D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration
More informationP-Channel 100 V (D-S) MOSFET
P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration
More informationN-Channel 80-V (D-S) MOSFET
N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM
More informationPrecision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
Product is End of Lif G348, G349 Prcision 8-h/ual 4-h Low Voltag nalog Multiplxrs ESRIPTION Th G348, G349 uss imos wafr fabrication tchnology that allows th G348/349 to oprat on singl and dual supplis.
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
More informationIXTT3N200P3HV IXTH3N200P3HV
Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous
More informationN-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationP-Channel 8 V (D-S) MOSFET
SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationP-Channel 60-V (D-S) MOSFET
New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationIXBT22N300HV IXBH22N300HV
High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More informationP-Channel 30-V (D-S) MOSFET
Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs
More informationN-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationP-Channel 30 V (D-S) MOSFET
Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationSP1001 Series - 8pF 15kV Unidirectional TVS Array
Sris - 8pF kv Unidirctional TVS Array RoHS Pb GRN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct ach I/O pin to provid a high lvl of protction for lctronic quipmnt that
More informationGeneral Purpose ESD Protection - SP1001 Series. Description. Features. Applications
TVS iod Arrays (SPA iods) Gnral Purpos ES Protction - SP00 Sris SP00 Sris - 8pF kv Unidirctional TVS Array RoHS Pb GREEN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationN-Channel 12 V (D-S) MOSFET
New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET
More information2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code
2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K PNP 50m -50V Gnral Purpos Transistors Datasht Outlin Paramtr V CO I C Valu 50V 150m VMT3 MT3F Collctor Bas Bas mittr mittr Collctor Faturs 1) Gnral
More informationLow Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras
TVS iod Arrays (SPA iods) SP3003 Sris 0.65pF iod Array RoHS Pb GREEN scription Th SP3003 has ultra low capacitanc rail-to-rail diods with an additional znr diod fabricatd in a propritary silicon avalanch
More informationComplementary MOSFET Half-Bridge (N- and P-Channel)
New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8
More informationDATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral
More informationCurrent Sensing MOSFET, N-Channel 30-V (D-S)
New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol
More informationGate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
More informationDual P-Channel 12 V (D-S) MOSFET
Si965DH Dual P-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) Q g (Typ.) S - 0.535 at V GS = -.5 V -..7 C 0.390 at V GS = -.5 V -.3 a 0.70 at V GS = -.8 V -. SOT-363 SC-70 (6-LEADS) 6
More informationDATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 2004 Mar 2 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching
More informationP-Channel 20-V (D-S) MOSFET
New Product Si763N P-Channel 0-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) e,f Q g (Typ.) 0.0087 at V GS = - 0 V - 35-0 8. nc 0.0 at V GS = -.5V - 35 FEATURES Halogen-free According to IEC 69--
More informationNLX2G00. Dual 2-Input NAND Gate
ual 2-Input NN Gat Th NLX2G00 is an advancd high-spd dual 2-input CMOS NN gat in ultra-small footprint. Th NLX2G00 input structurs provid protction whn voltags up to 7.0 volts ar applid, rgardlss of th
More information34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
More informationTop View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
More informationFDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
More informationDATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 2004 pr 06 2004 ug 6 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching
More informationDATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 200 Sp 0 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching and
More informationGreen. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
More informationPrecision Micropower 2.5V ShuntVoltage Reference
SPX4040 Prcision Micropowr.5V ShuntVoltag Rfrnc FETURES Trimmd Bandgap to 0.5% and % Wid Oprating Currnt 0µ to 5m Extndd Tmpratur Rang: -40 C to 85 C Low Tmpratur Cofficint 00 ppm/ C Rplacmnt in for LM4040
More informationDual N-Channel 30 V (D-S) MOSFET
Si97DH Dual N-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) a Q g (Typ.) SOT-6 SC-7 (6-LEADS).5 at V GS =.5 V. a.5 C.5 at V GS =.5 V. a FEATURES Halog-fr Aordig to IEC 69-- Dfiitio TrhFET
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationDATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral
More informationPin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel
YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
More information