P-Channel 30-V (D-S) MOSFET
|
|
- Jonah Fisher
- 6 years ago
- Views:
Transcription
1 i443ay PChannl 3V () MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).75 at V G = V 5 3. at V G = 4.5 V.3 O8 FEATURE Halognfr According to IEC 649 Availabl TrnchFET Powr MOFET APPLICATION Notbook Load witch Battry witch G G 4 5 Top Viw Ordring Information: i443ayte3 (Lad (Pb)fr) i443aytge3 (Lad (Pb)fr and Halognfr) PChannl MOFET ABOLUTE MAXIMUM RATING T A = 5 C, unlss othrwis notd Paramtr ymbol s tady tat Unit rainourc Voltag V 3 V Gatourc Voltag V G ± Continuous rain Currnt (T J = 5 C) a T A = 5 C 5.5 I T A = 7 C A Pulsd rain Currnt I M 5 Continuous ourc Currnt (iod Conduction) a I.7.36 T Maximum Powr issipation a A = 5 C 3..5 P W T A = 7 C.9.95 Oprating Junction and torag Tmpratur Rang T J, T stg 55 to 5 C THERMAL REITANCE RATING Paramtr ymbol Typical Maximum Unit Maximum JunctiontoAmbint a t s 33 4 R thja tady tat 7 84 C/W Maximum JunctiontoFoot (rain) tady tat R thjf 6 Nots: a. urfac Mountd on " x " FR4 board. ocumnt Numbr: Rv. C, 9c8
2 i443ay PECIFICATION T J = 5 C, unlss othrwis notd Paramtr ymbol Tst Conditions Min. Typ. Max. Unit tatic Gat Thrshold Voltag V G(th) V = V G, I = 5 µa. 3. V GatBody Lakag I G V = V, V G = ± V ± na V = 3 V, V G = V Zro Gat Voltag rain Currnt I V = 3 V, V G = V, T J = 7 C µa Ontat rain Currnt a I (on) V = 5 V, V G = V 3 A V G = V, I = 3 A rainourc Ontat Rsistanc a R (on) V G = 4.5 V, I = A.83. Ω Forward Transconductanc a g fs V = 5 V, I = 3 A 5 iod Forward Voltag a V I =.7 A, V G = V.74. V ynamic b Total Gat Charg Q g 6 95 Gatourc Charg Q gs V = 5 V, V G = 5 V, I = 3 A 5.5 nc Gatrain Charg Q gd 3 TurnOn lay Tim t d(on) 35 Ris Tim t r V = 5 V, R L = 5 Ω 8 3 TurnOff lay Tim t d(off) I A, V GEN = V, R G = 6 Ω 7 6 ns Fall Tim t f 97 5 Gat Rsistanc R g 3.4 Ω ourcrain Rvrs Rcovry Tim t rr I F =. A, di/dt = A/µs 7 ns Nots: a. Puls tst; puls width 3 µs, duty cycl %. b. Guarantd by dsign, not subjct to production tsting. trsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. TYPICAL CHARACTERITIC 5 C, unlss othrwis notd V G = thru 4 V 4 (A) rain Currnt I 3 rain Currnt (A) 3 T C = 5 C 3 V V V raintoourc Voltag (V) Output Charactristics I 5 C 55 C V G Gattoourc Voltag (V) Transfr Charactristics ocumnt Numbr: Rv. C, 9c8
3 i t i443ay TYPICAL CHARACTERITIC 5 C, unlss othrwis notd.4 7 OnRsistanc (Ω)...8 V G = 4.5 V (pf) Capacitanc C iss R (on ).6 V G = V C 4 C oss I rain Currnt (A) OnRsistanc vs. rain Currnt C rss V raintoourc Voltag (V) Gat Charg.6 Gattoourc Voltag (V) V = 5 V I = 3 A c n a s s R n O R (on ) (Normalizd).4.. V G = V I = 3 A V G Q g Total Gat Charg (nc) ourcrain iod Forward Voltag T J Junction Tmpratur ( C) Capacitanc.5 I o u r c C u r r n t ( A ) T J = 5 C T J = 5 C OnRsistanc (Ω) R (on ) V ourctorain Voltag (V) OnRsistanc vs. Junction Tmpratur VG Gattoourc Voltag (V) OnRsistanc vs. Gattoourc Voltag ocumnt Numbr: Rv. C, 9c8 3
4 i443ay TYPICAL CHARACTERITIC 5 C, unlss othrwis notd Varianc (V) V G(th ).4. I = 5 µa Powr (W) T J Tmpratur ( C) Thrshold Voltag.. Tim (s) ingl Puls Powr, JunctiontoAmbint Limitd by R (on)* (A) ms Currnt rain ms ms I T C = 5 C ingl Puls s s C V raintoourc Voltag (V) * V G minimum V G at which R (on) is spcifid af Oprating Ara, JunctiontoCas Normalizd Ef fctiv T ransint Thrmal Impdanc uty Cycl =.5. Nots: P M.5 t t t. uty Cycl, =. t. Pr Unit Bas = R th J A = 7 C/W 3. T JM T A = P M Z (t) th J A ingl Puls 4. urfac Mountd quar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, JunctiontoAmbint 4 ocumnt Numbr: Rv. C, 9c8
5 l i f f t i i t i443ay TYPICAL CHARACTERITIC 5 C, unlss othrwis notd n s n r a n T c a d v p c m l I d E m a r N o r m a T z h uty Cycl = ingl Puls. 4 3 quar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, JunctiontoFoot maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for ilicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s /ppg?7379. ocumnt Numbr: Rv. C, 9c8 5
6 Packag Information OIC (NARROW): 8LEA JEEC Part Numbr: M E H 3 4 A.5 mm (Gag Plan) h x 45 C All Lads B A L q mm.4" MILLIMETER INCHE IM Min Max Min Max A A..4.8 B C E BC.5 BC H h L q ECN: C657Rv. I, p6 WG: 5498 ocumnt Numbr: 79 p6
7 Application Not 86 RECOMMENE MINIMUM PA FOR O8 7 (4.369).8 (.7) APPLICATION NOTE.47 (.94).46 (6.48) 5 (3.86). (.559).5 (.7) Rcommndd Minimum Pads imnsions in Inchs/(mm) Rturn to Indx Rturn to Indx ocumnt Numbr: 766 Rvision: Jan8
8 Lgal isclaimr Notic Vishay isclaimr ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intrtchnology, Inc., its affiliats, agnts, and mploys, and all prsons acting on its or thir bhalf (collctivly, Vishay ), disclaim any and all liability for any rrors, inaccuracis or incompltnss containd in any datasht or in any othr disclosur rlating to any product. Vishay maks no warranty, rprsntation or guarant rgarding th suitability of th products for any particular purpos or th continuing production of any product. To th maximum xtnt prmittd by applicabl law, Vishay disclaims (i) any and all liability arising out of th application or us of any product, (ii) any and all liability, including without limitation spcial, consquntial or incidntal damags, and (iii) any and all implid warrantis, including warrantis of fitnss for particular purpos, noninfringmnt and mrchantability. tatmnts rgarding th suitability of products for crtain typs of applications ar basd on Vishay s knowldg of typical rquirmnts that ar oftn placd on Vishay products in gnric applications. uch statmnts ar not binding statmnts about th suitability of products for a particular application. It is th customr s rsponsibility to validat that a particular product with th proprtis dscribd in th product spcification is suitabl for us in a particular application. Paramtrs providd in datashts and / or spcifications may vary in diffrnt applications and prformanc may vary ovr tim. All oprating paramtrs, including typical paramtrs, must b validatd for ach customr application by th customr s tchnical xprts. Product spcifications do not xpand or othrwis modify Vishay s trms and conditions of purchas, including but not limitd to th warranty xprssd thrin. Excpt as xprssly indicatd in writing, Vishay products ar not dsignd for us in mdical, lifsaving, or lifsustaining applications or for any othr application in which th failur of th Vishay product could rsult in prsonal injury or dath. Customrs using or slling Vishay products not xprssly indicatd for us in such applications do so at thir own risk. Plas contact authorizd Vishay prsonnl to obtain writtn trms and conditions rgarding products dsignd for such applications. No licns, xprss or implid, by stoppl or othrwis, to any intllctual proprty rights is grantd by this documnt or by any conduct of Vishay. Product nams and markings notd hrin may b tradmarks of thir rspctiv ownrs. 7 VIHAY INTERTECHNOLOGY, INC. ALL RIGHT REERVE Rvision: 8Fb7 ocumnt Numbr: 9
P-Channel 1.8-V (G-S) MOSFET
i4465ay PChannl.8V (G) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) b Q g (Typ.) 9 at V G = 4.5 V 3.7 8 at V G = 2.5 V 2.4 55 nc 6 at V G =.8 V FEATURE Halognfr According to IEC 624922 Availabl TrnchFET
More information20-V N-Channel 1.8-V (G-S) MOSFET
-V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channl -V (-) MOFE PROUC UMMARY V (V) R (on) (Ω) I (A) a Q g (yp.).38 at V G = V 33 37.5 nc.5 at V G =.5 V 3 FEAURE Halogn-fr According to IEC 29-2-2 Availabl rnchfe Gn II Powr MOFE % R g and UI
More informationN-Channel 20 V (D-S) MOSFET
N-Channl 2 V (-) MOFET i846b PROUCT UMMARY V (V) R (on) () MAX. I (A) Q g (TYP.) 2 mm.37 at V G = 2.5 V 6 7.5 nc.33 at V G = 4.5 V 6.42 at V G =.8 V 5 xxxx xxx Backsid Viw MICRO FOOT.5 x.5 mm 6 5 Bump
More information20 V N-Channel 1.8 V (G-S) MOSFET
V N-Channl.8 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Bump id Viw 3 4.37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 G MICRO FOOT Backsid Viw 84 xxx FEATURE TrnchFET Powr MOFET MICRO
More informationN-Channel 20 V (D-S) MOSFET
N-Channl V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.).37 at V G =.5 V 7.5 nc.33 at V G =.5 V. at V G =.8 V 5 Bump id Viw MICRO FOOT G Backsid Viw FEATURE TrnchFET Powr MOFET Ultra-small.5
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More informationN-Channel 8 V (D-S) MOSFET
N-Channel 8 V (-) MOFET i88b Vishay iliconix PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (TYP.) 8.8 mm xxx xx.54 at V G = 4.5 V 3.5.6 at V G =.5 V 3.3.68 at V G =.8 V 3..86 at V G =.5 V.3.35 at V G =. V
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationN-Channel 80-V (D-S) MOSFET
N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration
More informationDG3537, DG3538, DG3539, DG , 360 MHz, Dual SPST Analog Switches. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS
4, 360 MHz, Dual SPST nalog Switchs DESRIPTION Th DG3537, DG3538, DG3539, DG3540 ar dual SPST analog switchs which oprat from.8 V to 5.5 V singl rail powr supply. Thy ar dsign for audio, vido, and US switching
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationP-Channel 100 V (D-S) MOSFET
P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration
More informationN-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.) 8.75 at V G = 6 V a nc. at V G = V a.95 at V G =.5 V 5 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View G Ordering Information: -T-GE
More informationPrecision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
Product is End of Lif G348, G349 Prcision 8-h/ual 4-h Low Voltag nalog Multiplxrs ESRIPTION Th G348, G349 uss imos wafr fabrication tchnology that allows th G348/349 to oprat on singl and dual supplis.
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationG D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from
More informationP-Channel 60-V (D-S) MOSFET
New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:
More informationIXTT3N200P3HV IXTH3N200P3HV
Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous
More informationG D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationP-Channel 30-V (D-S) MOSFET
Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs
More informationIXBT22N300HV IXBH22N300HV
High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationN-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationCurrent Sensing MOSFET, N-Channel 30-V (D-S)
New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationP-Channel 30 V (D-S) MOSFET
Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9
More informationP-Channel 8 V (D-S) MOSFET
SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -
More informationN-Channel 12 V (D-S) MOSFET
New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET
More informationNLX2G00. Dual 2-Input NAND Gate
ual 2-Input NN Gat Th NLX2G00 is an advancd high-spd dual 2-input CMOS NN gat in ultra-small footprint. Th NLX2G00 input structurs provid protction whn voltags up to 7.0 volts ar applid, rgardlss of th
More informationDual P-Channel 12 V (D-S) MOSFET
Si965DH Dual P-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) Q g (Typ.) S - 0.535 at V GS = -.5 V -..7 C 0.390 at V GS = -.5 V -.3 a 0.70 at V GS = -.8 V -. SOT-363 SC-70 (6-LEADS) 6
More informationComplementary MOSFET Half-Bridge (N- and P-Channel)
New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8
More informationDual N-Channel 30 V (D-S) MOSFET
Si97DH Dual N-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) a Q g (Typ.) SOT-6 SC-7 (6-LEADS).5 at V GS =.5 V. a.5 C.5 at V GS =.5 V. a FEATURES Halog-fr Aordig to IEC 69-- Dfiitio TrhFET
More informationShenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features
442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter
More informationPower MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50
Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting
More informationAON7404G 20V N-Channel MOSFET
AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A
More informationGeneral Purpose ESD Protection - SP1001 Series. Description. Features. Applications
TVS iod Arrays (SPA iods) Gnral Purpos ES Protction - SP00 Sris SP00 Sris - 8pF kv Unidirctional TVS Array RoHS Pb GREEN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct
More informationAOD444/AOI444 60V N-Channel MOSFET
AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol
AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G
More informationLow Capacitance ESD Protection - SP3003 Series. Description. Features. Applications. LCD/ PDP TVs DVD Players Desktops MP3/ PMP Digital Cameras
TVS iod Arrays (SPA iods) SP3003 Sris 0.65pF iod Array RoHS Pb GREEN scription Th SP3003 has ultra low capacitanc rail-to-rail diods with an additional znr diod fabricatd in a propritary silicon avalanch
More informationSP1001 Series - 8pF 15kV Unidirectional TVS Array
Sris - 8pF kv Unidirctional TVS Array RoHS Pb GRN scription Znr diods fabricatd in a propritary silicon avalanch tchnology protct ach I/O pin to provid a high lvl of protction for lctronic quipmnt that
More informationDATA SHEET. PDTA124E series PNP resistor-equipped transistors; R1 = 22 kω, R2 = 22 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT PT24 sris Suprsds data of 200 pr 4 2004 ug 02 PT24 sris FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral
More informationNLU1GT32. Single 2-Input OR Gate, TTL Level. LSTTL Compatible Inputs
NUGT32 Singl 2-Input OR Gat, TT vl STT Compatibl Inputs Th NUGT32 MiniGat is an advancd CMOS high spd 2 input OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input thrsholds and
More informationNLU2G16. Dual Non-Inverting Buffer
NLU2G ual Non-Invrting Buffr Th NLU2G MiniGat is an advancd high spd CMOS dual non invrting buffr in ultra small footprint. Th NLU2G input and output structurs provid protction whn voltags up to 7.0 V
More informationAO V P-Channel MOSFET
AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device
More information2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code
2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K PNP 50m -50V Gnral Purpos Transistors Datasht Outlin Paramtr V CO I C Valu 50V 150m VMT3 MT3F Collctor Bas Bas mittr mittr Collctor Faturs 1) Gnral
More informationDATA SHEET. PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 2004 pr 06 2004 ug 6 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching
More informationDATA SHEET. PDTC114Y series NPN resistor-equipped transistors; R1 = 10 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 200 Sp 0 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching and
More informationFDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
More informationDATA SHEET. PDTC144W series NPN resistor-equipped transistors; R1=47kΩ, R2 = 22 kω DISCRETE SEMICONDUCTORS
ISCRT SMICONUCTORS T SHT Suprsds data of 2004 Mar 2 2004 ug 7 FTURS uilt-in bias rsistors Simplifid circuit dsign Rduction of componnt count Rducd pick and plac costs. PPLICTIONS Gnral purpos switching
More informationNLU1GT86. Single 2-Input Exclusive OR Gate, TTL Level. LSTTL Compatible Inputs
NUGT8 Singl 2-Input xclusiv OR Gat, TT vl STT Compatibl Inputs Th NUGT8 MiniGat is an advancd CMOS high spd 2 input xclusiv OR gat in ultra small footprint. Th dvic input is compatibl with TT typ input
More informationNLX1G10. 3-Input NAND Gate
NG0 3-Input NN Gat Th NG0 is an advancd high spd 3 input MOS NN gat in ultra small footprint. Th NG0 input structurs provid protction whn voltags up to 7.0 V ar applid, rgardlss of th supply voltag. Faturs
More information