Dual P-Channel 12 V (D-S) MOSFET

Transcription

1 Si965DH Dual P-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) Q g (Typ.) S at V GS = -.5 V -..7 C at V GS = -.5 V -.3 a 0.70 at V GS = -.8 V -. SOT-363 SC-70 (6-LEADS) 6 D FEATURES Halog-fr Aordig to IEC 69-- Dfiitio TrhFET Powr MOSFET Compliat to RoHS Dirtiv 00/95/EC APPLICATIONS Load Swith for Portabl Dvis S S G D 3 5 G S Markig Cod DE XX Lot Traability ad Dat Cod Part # Cod YY G G Top Viw D D Ordrig Iformatio: Si965DH-T-E3 (Lad (Pb)-fr) Si965DH-T-GE3 (Lad (Pb)-fr ad Halog-fr) P-Chal MOSFET P-Chal MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, ulss othrwis otd Paramtr Symbol Limit Uit Drai-Sour Voltag V DS - Gat-Sour Voltag V GS ± 8 V T C = 5 C -.3 a Cotiuous Drai Currt (T J = 50 C) T C = 70 C -. I D T A = 5 C -. b, T A = 70 C b, A Pulsd Drai Currt I DM - 3 T C = 5 C - Cotiuous Sour-Drai Diod Currt T A = 5 C I S - b, T C = 5 C.5 Maximum Powr Dissipatio T C = 70 C P D T A = 5 C 0.7 b, W T A = 70 C 7 b, Opratig Jutio ad Storag Tmpratur Rag T J, T stg - 55 to 50 C THERMAL RESISTANCE RATINGS Paramtr Symbol Typial Maximum Uit Maximum Jutio-to-Ambit b, d t 5 s R thja C/W Maximum Jutio-to-Foot (Drai) Stady Stat R thjf Nots: a. Pakag limitd. b. Surfa moutd o " x " FR board.. t = 5 s. d. Maximum udr stady stat oditios is 0 C/W. Doumt Numbr: S0-079-Rv. B, 05-Apr-0

2 Si965DH SPECIFICATIONS T J = 5 C, ulss othrwis otd Paramtr Symbol Tst Coditios Mi. Typ. Max. Uit Stati Drai-Sour Brakdow Voltag V DS V GS = 0 V, I D = - 50 µa - V V DS Tmpratur Coffiit ΔV DS /T J - I D = - 50 µa V GS(th) Tmpratur Coffiit ΔV GS(th) /T J mv/ C Gat-Sour Thrshold Voltag V GS(th) V DS = V GS, I D = - 50 µa V Gat-Sour Lakag I GSS V DS = 0 V, V GS = ± 8 V ± 00 A V DS = - V, V GS = 0 V - Zro Gat Voltag Drai Currt I DSS V DS = - V, V GS = 0 V, T J = 85 C - 0 µa O-Stat Drai Currt a I D(o) V DS - 5 V, V GS = -.5 V - 3 A Drai-Sour O-Stat Rsista a R DS(o) V GS = -.5 V, I D = - 6 A Ω V GS = -.5 V, I D = -.0 A V GS = -.8 V, I D = A Forward Trasoduta a g fs V DS = - 6 V, I D = -.0 A.5 S Dyami b Iput Capaita C iss 0 Output Capaita C oss V DS = - 6 V, V GS = 0 V, f = MHz pf Rvrs Trasfr Capaita C rss 5 V DS = - 6 V, V GS = - 8 V, I D = -. A.8. Total Gat Charg Q g.7.6 C Gat-Sour Charg Q gs V DS = - 6 V, V GS = -.5 V, I D = -. A 0.3 Gat-Drai Charg Q gd Gat Rsista R g f = MHz 7.5 Ω Tur-O Dlay Tim t d(o) 0 Ris Tim t r V DD = - 6 V, R L = 6.7 Ω 7 0 Tur-Off Dlay Tim t d(off) I D A, V GEN = -.5 V, R g = Ω 5 5 Fall Tim t f 0 5 Tur-O Dlay Tim t d(o) 5 s Ris Tim t r V DD = - 6 V, R L = 6.7 Ω 0 Tur-Off Dlay Tim t d(off) I D A, V GEN = - 8 V, R g = Ω 0 Fall Tim t f 0 5 Drai-Sour Body Diod Charatristis Cotiuous Sour-Drai Diod Currt I S T C = 5 C -.0 Puls Diod Forward Currt a I SM A Body Diod Voltag V SD I S = A - -. V Body Diod Rvrs Rovry Tim t rr 0 0 s Body Diod Rvrs Rovry Charg Q rr 0 0 C I F = A, di/dt = 00 A/µs, T J = 5 C Rvrs Rovry Fall Tim t a 9.5 s Rvrs Rovry Ris Tim t b.5 Nots: a. Puls tst; puls width 300 µs, duty yl %. b. Guaratd by dsig, ot subjt to produtio tstig. Strsss byod thos listd udr Absolut Maximum Ratigs may aus prmat damag to th dvi. Ths ar strss ratigs oly, ad futioal opratio of th dvi at ths or ay othr oditios byod thos idiatd i th opratioal stios of th spifiatios is ot implid. Exposur to absolut maximum ratig oditios for xtdd priods may afft dvi rliability. Doumt Numbr: S0-079-Rv. B, 05-Apr-0

3 Si965DH TYPICAL CHARACTERISTICS 5 C, ulss othrwis otd V GS =5V thru.5 V.0 I D - Drai Currt (A) V GS =V V GS =.5V I D - Drai Currt (A) T C = 5 C T C = 5 C V GS =V T C = - 55 C V DS - Drai-to-Sour Voltag (V) Output Charatristis V GS - Gat-to-Sour Voltag (V) Trasfr Charatristis O-Rsista (Ω) R DS(o) 0. V GS =.8V V GS =.5V V GS =.5V C - Capaita (pf) C iss C oss C rss I D - Drai Currt (A) O-Rsista vs. Drai Currt ad Gat Voltag V DS - Drai-to-Sour Voltag (V) Capaita.5 - Gat-to-Sour Voltag (V) V GS 6 I D =.A V DS =6V V DS =9.6V R DS(o) - O-Rsista (Normalizd) V GS =.5V;.5V; I D =A V GS =.8V;I D =A Q g - Total Gat Charg (C) Gat Charg T J -Jutio Tmpratur ( C) O-Rsista vs. Jutio Tmpratur Doumt Numbr: S0-079-Rv. B, 05-Apr-0 3

4 Si965DH TYPICAL CHARACTERISTICS 5 C, ulss othrwis otd 0.0 I D =A - Sour Currt (A) I S T J = 50 C T J = 5 C - O-Rsista (Ω) R DS(o) 0. T J =5 C T J =5 C V SD -Sour-to-Drai Voltag (V) Sour-Drai Diod Forward Voltag V GS - Gat-to-Sour Voltag (V) O-Rsista vs. Gat-to-Sour Voltag (V) V GS(th) 0.5 I D = 50 µa (W) Powr T J - Tmpratur ( C) Thrshold Voltag Tim (s) Sigl Puls Powr 0 Limitd by R DS(o)* - Drai Currt (A) I D T A = 5 C Sigl Puls ms 0 ms 00 ms s,0s DC BVDSS Limitd 0 V DS - Drai-to-Sour Voltag (V) * V GS > miimum V GS at whih R DS(o) is spifid Saf Opratig Ara, Jutio-to-Ambit 00 Doumt Numbr: S0-079-Rv. B, 05-Apr-0

5 Si965DH TYPICAL CHARACTERISTICS 5 C, ulss othrwis otd I D - Drai Currt (A). Pakag Limitd Powr Dissipatio (W) T C - Cas Tmpratur ( C) Currt Dratig* T C - Cas Tmpratur ( C) Powr, Jutio-to-Foot * Th powr dissipatio P D is basd o T J(max) = 50 C, usig jutio-to-as thrmal rsista, ad is mor usful i sttlig th uppr dissipatio limit for ass whr additioal hatsikig is usd. It is usd to dtrmi th urrt ratig, wh this ratig falls blow th pakag limit. Doumt Numbr: S0-079-Rv. B, 05-Apr-0 5

6 l i f f t i i t Si965DH TYPICAL CHARACTERISTICS 5 C, ulss othrwis otd s l i f f t r a t i i T a d v p m l I d E m a r N o r m a T z h Duty Cyl = T JM - T A = P DM Z (t) thja Sigl Puls. Surfa Moutd Nots: Squar Wav Puls Duratio (s) Normalizd Thrmal Trasit Impda, Jutio-to-Ambit P DM t t t. Duty Cyl, D = t. Pr Uit Bas = R thja = 0 C/W s r a T a d v p m l I d E m a r N o r m a T z h Duty Cyl = Sigl Puls Squar Wav Puls Duratio (s) Normalizd Thrmal Trasit Impda, Jutio-to-Foot maitais worldwid maufaturig apability. Produts may b maufaturd at o of svral qualifid loatios. Rliability data for Silio Thology ad Pakag Rliability rprst a omposit of all qualifid loatios. For rlatd doumts suh as pakag/tap drawigs, part markig, ad rliability data, s /ppg? Doumt Numbr: S0-079-Rv. B, 05-Apr-0

7 Lgal Dislaimr Noti Vishay Dislaimr All produt spifiatios ad data ar subjt to hag without oti. Vishay Itrthology, I., its affiliats, agts, ad mploys, ad all prsos atig o its or thir bhalf (olltivly, Vishay ), dislaim ay ad all liability for ay rrors, iaurais or iompltss otaid hri or i ay othr dislosur rlatig to ay produt. Vishay dislaims ay ad all liability arisig out of th us or appliatio of ay produt dsribd hri or of ay iformatio providd hri to th maximum xtt prmittd by law. Th produt spifiatios do ot xpad or othrwis modify Vishay s trms ad oditios of purhas, iludig but ot limitd to th warraty xprssd thri, whih apply to ths produts. No lis, xprss or implid, by stoppl or othrwis, to ay itlltual proprty rights is gratd by this doumt or by ay odut of Vishay. Th produts show hri ar ot dsigd for us i mdial, lif-savig, or lif-sustaiig appliatios ulss othrwis xprssly idiatd. Customrs usig or sllig Vishay produts ot xprssly idiatd for us i suh appliatios do so tirly at thir ow risk ad agr to fully idmify Vishay for ay damags arisig or rsultig from suh us or sal. Plas otat authorizd Vishay prsol to obtai writt trms ad oditios rgardig produts dsigd for suh appliatios. Produt ams ad markigs otd hri may b tradmarks of thir rsptiv owrs. Doumt Numbr: 9000 Rvisio: 8-Jul-08