Dual N-Channel 20 V (D-S) MOSFET

Transcription

1 Si988DH Dual NChannel V (DS) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =. V. a.6 nc 8 at V GS =. V. a. at V GS =.8 V. a SOT6 SC7 (6LEADS) FEATURES Halogenfee Accoding to IEC 69 Definition TenchFET Powe MOSFET Compliant to RoHS Diective /9/EC APPLICATIONS Load Switch fo Potable Applications S 6 D M a king Code D D G D G S CF XX Lot T a ce ab ility a nd D a te Code P a t # Code Y Y G G Top V iew Odeing Infomation: Si988DHTE (Lead (Pb)fee) Si988DHTGE (Lead (Pb)fee and Halogenfee) S NChannel MOSFET S NChannel MOSFET ABSOLUTE MAXIMUM RATINGS T A = C, unless othewise noted Paamete Symbol Limit Unit DainSouce Voltage V DS V GateSouce Voltage V GS ± 8 T C = C. a T C = 7 C. a Continuous Dain Cuent (T J = C) I D T A = C.a, b, c T A = 7 C.a, b, c A Pulsed Dain Cuent I DM T C = C. Continuous SouceDain Diode Cuent I S T A = C b, c T C = C. T C = 7 C Maximum Powe Dissipation P D W T A = C.7 b, c T A = 7 C.7 b, c Opeating Junction and Stoage Tempeatue Range T J, T stg to C Soldeing Recommendations (Peak Tempeatue) d, e 6 THERMAL RESISTANCE RATINGS Paamete Symbol Typical Maximum Unit Maximum JunctiontoAmbient b, f t s R thja 7 C/W Maximum JunctiontoFoot (Dain) Steady State R thjf 8 Notes: a. Package limited. b. Suface mounted on " x " FR boad. c. t = s. d. Maximum unde steady state conditions is C/W. Document Numbe: 796 S7Rev. B, 9Ma

2 Si988DH SPECIFICATIONS T J = C, unless othewise noted Paamete Symbol Test Conditions Min. Typ. Max. Unit Static DainSouce Beakdown Voltage V DS V GS = V, I D = µa V V DS Tempeatue Coefficient ΔV DS /T J 9.7 I D = µa V GS(th) Tempeatue Coefficient ΔV GS(th) /T J. mv/ C GateSouce Theshold Voltage V GS(th) V DS = V GS, I D = µa. V GateSouce Leakage I GSS V DS = V, V GS = ± 8 V ± ns V DS = V, V GS = V Zeo Gate Voltage Dain Cuent I DSS V DS = V, V GS = V, T J = C µa OnState Dain Cuent a I D(on) V DS V, V GS =. V A DainSouce OnState Resistance a R DS(on) V GS =. V, I D =. A. Ω V GS =. V, I D =. A.9 8 V GS =.8 V, I D =. A.. Fowad Tansconductance a g fs V DS = V, I D =. A S Dynamic b Input Capacitance C iss Output Capacitance C oss V DS = V, V GS = V, f = MHz pf Revese Tansfe Capacitance C ss V DS = V, V GS = 8 V, I D =.6 A.7. Total Gate Chage Q g.6. nc GateSouce Chage Q gs V DS = V, V GS =. V, I D =.6 A. GateDain Chage Q gd. Gate Resistance R g f = MHz Ω TunOn Delay Time t d(on) 8 Rise Time t V DD = V, R L = 7.7 Ω TunOff Delay Time t d(off) I D. A, V GEN =. V, R g = Ω Fall Time t f Tunon Delay Time t d(on) ns Rise Time t VDD = V, RL = 7.7 Ω TunOff Delay Time t d(off) I D. A, V GEN = 8 V, R g = Ω Fall Time t 6 DainSouce Body Diode Chaacteistics Continuous SouceDain Diode Cuent I S T C = C Pulse Diode Fowad Cuent I SM A Body Diode Voltage V SD I S =. A, V GS = V. V Body Diode Revese Recovey Time t ns Body Diode Revese Recovey Chage Q nc I F =. A, di/dt = A/µs, T J = C Revese Recovey Fall Time t a 6 ns Revese Recovey Rise Time t b Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaanteed by design, not subject to poduction testing. Stesses beyond those listed unde Absolute Maximum Ratings may cause pemanent damage to the device. These ae stess atings only, and functional opeation of the device at these o any othe conditions beyond those indicated in the opeational sections of the specifications is not implied. Exposue to absolute maximum ating conditions fo extended peiods may affect device eliability. Document Numbe: 796 S7Rev. B, 9Ma

3 Si988DH TYPICAL CHARACTERISTICS C, unless othewise noted. (A) V GS = V thu V (A) Dain Cuent V GS =. V Dain Cuent T C = C. T C = C I D I D. T C = C V GS = V V DS DaintoSouce Voltage (V) Output Chaacteistics V GS GatetoSouce Voltage (V) Tansfe Chaacteistics. 6 DaintoSouce OnResistance (Ω) R D S(on ).. V GS =.8 V.. V GS =. V. V GS =. V. Capacitance (pf) C C iss 8 C oss C ss 8 6 V GS GatetoSouce Voltage (V) OnResistance vs. Dain Cuent V DS DaintoSouce Voltage (V) Capacitance GatetoSouce Voltage (V) V G S I D =.6 A V DS = V V DS = 6 V istance s e R n O R D S(on ) (Nomalized) I D =.6 A V GS =.8 V,. V,. V Q g Total Gate Chage (nc) Gate Chage 7 T J Junction Tempeatue ( C) OnResistance vs. Junction Tempeatue Document Numbe: 796 S7Rev. B, 9Ma

4 Si988DH TYPICAL CHARACTERISTICS C, unless othewise noted So c e C e n t ( A ) u u I S T J = C T J = C R D S(on ) DaintoSouce OnResistance (Ω) I D =. A T J = C T J = C V SD SoucetoDain Voltage (V) Fowad Diode Voltage V GS GatetoSouce Voltage (V) OnResistance vs. GateSouce Voltage.9 V G S(th ) (V ).7. I D = µa (W) Powe T J Tempeatue ( C) Theshold Voltage Time (s) Single Pulse Powe Limited by R * DS(on) ) A t ( n e µs u i n C s a D ms I D. T A = C Single Pulsed BVDSS Limited ms ms, s DC.. V DS DaintoSouce Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Opeating Aea, JunctiontoCase Document Numbe: 796 S7Rev. B, 9Ma

5 Si988DH TYPICAL CHARACTERISTICS C, unless othewise noted.... I D Dain Cuent (A ).. Package Limited Powe Dissipation (W) T C Case Tempeatue ( C) Cuent Deating*. 7 T C Case Tempeatue ( C) Powe Deating * The powe dissipation P D is based on T J(max) = C, using junctiontocase themal esistance, and is moe useful in settling the uppe dissipation limit fo cases whee additional heatsinking is used. It is used to detemine the cuent ating, when this ating falls below the package limit. Document Numbe: 796 S7Rev. B, 9Ma

6 Si988DH TYPICAL CHARACTERISTICS C, unless othewise noted Nomalized Effective Tansient Themal Impedance. Duty Cycle = T JM T A = P DM Z (t) thja Single Pulse. Suface Mounted. 6 Notes: Squae Wave Pulse Duation (s) Nomalized Themal Tansient Impedance, JunctiontoAmbient P DM t t t. Duty Cycle, D = t. Pe Unit Base = R thja = 7 C/W Nomalized Effective Tansient Themal Impedance. Duty Cycle =..... Single Pulse. Squae Wave Pulse Duation (s) Nomalized Themal Tansient Impedance, JunctiontoFoot maintains woldwide manufactuing capability. Poducts may be manufactued at one of seveal qualified locations. Reliability data fo Silicon Technology and Package Reliability epesent a composite of all qualified locations. Fo elated documents such as package/tape dawings, pat making, and eliability data, see /ppg? Document Numbe: 796 S7Rev. B, 9Ma

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