P-Channel 200-V (D-S) MOSFET

Transcription

1 Si375V P-Chal -V (-S) MOSFE PROUC SUMMARY V S (V) R S(o) (Ω) I (A) a Q g (yp.).6 at V GS = - V C.65 at V GS = - 6 V -.93 FEAURES Halog-fr Aordig to IEC 69-- fiitio rhfe Powr MOSFE % R g ad UIS std Compliat to RoHS irtiv /95/EC APPLICAIONS Ativ Clamp Ciruits i C/C Powr Supplis SOP-6 op Viw 6 S 3 mm G 3.85 mm 5 Markig Cod AI XXX Part # Cod Ordrig Iformatio: Si375V--E3 (Lad (Pb)-fr) Si375V--GE3 (Lad (Pb)-fr ad Halog-fr) S Lot raability ad at Cod G P-Chal MOSFE ABSOLUE MAXIMUM RAINGS, ulss othrwis otd Paramtr Symbol Limit Uit rai-sour Voltag V S - V Gat-Sour Voltag V GS ± C = 5 C -.95 a Cotiuous rai Currt ( J = 5 C) C = 7 C -.77 I -.75 b, A = 7 C -.59 b, A Pulsd rai Currt I M - 3 Cotiuous Sour-rai iod Currt C = 5 C -.6 I S.6 b, Avalah Currt I AS 3 L =. mh Sigl-Puls Avalah Ergy E AS.5 mj C = 5 C 3. Maximum Powr issipatio C = 7 C. P W b, A = 7 C.5 b, Opratig Jutio ad Storag mpratur Rag J, stg - 55 to 5 C HERMAL RESISANCE RAINGS Paramtr Symbol ypial Maximum Uit Maximum Jutio-to-Ambit b, d t 5 s R thja C/W Maximum Jutio-to-Foot Stady Stat R thjf 3 39 Nots: a. C = 5 C. b. Surfa Moutd o " x " FR board.. t = 5 s. d. Maximum udr Stady Stat oditios is C/W. oumt Numbr: 79 S9-766-Rv. B, -May-9

2 Si375V SPECIFICAIONS J = 5 C, ulss othrwis otd Paramtr Symbol st Coditios Mi. yp. Max. Uit Stati rai-sour Brakdow Voltag V S V GS = V, I = - 5 µa - V V S mpratur Coffiit ΔV S / J - I = - 5 µa V GS(th) mpratur Coffiit ΔV GS(th) / J 6. mv/ C Gat-Sour hrshold Voltag V GS(th) V S = V GS, I = - 5 µa - - V Gat-Sour Lakag I GSS V S = V, V GS = ± V ± A V S = - V, V GS = V - Zro Gat Voltag rai Currt I SS V S = - V, V GS = V, J = 55 C - µa O-Stat rai Currt a I (o) V S - V, V GS = - V - A rai-sour O-Stat Rsista a V R GS = - V, I = -.9 A.3.6 S(o) V GS = - 6 V, I = -.7 A Ω Forward rasoduta a g fs V S = - V, I = -.9 A 3.5 S yami b Iput Capaita C iss 5 Output Capaita C oss V S = - 5 V, V GS = V, f = MHz 6 pf Rvrs rasfr Capaita C rss 8 V S = - V, V GS = - V, I = - A.7 8 otal Gat Charg Q g 7.8 C Gat-Sour Charg Q gs V S = - V, V GS = - 6 V, I = - A Gat-rai Charg Q gd 3.7 Gat Rsista R g f = MHz 9 Ω ur-o lay im t d(o) 9 Ris im t r V = - V, R L = Ω 8 ur-off layim t d(off) I - A, V GEN = - V, R g = Ω 8 Fall im t f 8 ur-o lay im t d(o) s Ris im t r V = - V, R L = Ω 9 ur-off layim t d(off) I - A, V GEN = - 6 V, R g = Ω 3 35 Fall im t f rai-sour Body iod Charatristis Cotious Sour-rai iod Currt I S C = 5 C -.95 Puls iod Forward Currt I SM - 3 A Body iod Voltag V S I S = - A, V GS = V V Body iod Rvrs Rovry im t rr 8 3 s Body iod Rvrs Rovry Charg Q rr C I F = -. A, di/dt = A/µs, J = 5 C Rvrs Rovry Fall im t a 6 s Rvrs Rovry Ris im t b 38 Nots: a. Puls tst; puls width 3 µs, duty yl %. b. Guaratd by dsig, ot subjt to produtio tstig. Strsss byod thos listd udr Absolut Maximum Ratigs may aus prmat damag to th dvi. hs ar strss ratigs oly, ad futioal opratio of th dvi at ths or ay othr oditios byod thos idiatd i th opratioal stios of th spifiatios is ot implid. Exposur to absolut maximum ratig oditios for xtdd priods may afft dvi rliability. oumt Numbr: 79 S9-766-Rv. B, -May-9

3 Si375V YPICAL CHARACERISICS 5 C, ulss othrwis otd 5 V GS = V thru 5 V (A) ( i t.5. rai Currt (A) 3 rai Currt.9.6 C = 5 C I - I -.3 C = 5 C V 6 8 V S - rai-to-sour Voltag (V) Output Charatristis. C = - 55 C 6 8 V GS - Gat-to-Sour Voltag (V) rasfr Charatristis 75 R S o ) - O - R s s a (Ω) V GS = 6 V V GS = V Capaita (pf) C C iss C oss. 3 5 I - rai Currt (A) O-Rsista vs. rai Currt C rss 8 6 V S - rai-to-sour Voltag (V) Capaita. Gat-to-Sour Voltag (V) - V GS 8 6 I = A V S = 75 V V S = V V S = 5 V R S(o ) - O-Rsista (Normalizd) I = A V GS = V V GS = 6 V Q g - otal Gat Charg (C) Gat Charg J - Jutio mpratur ( C) O-Rsista vs. Jutio mpratur oumt Numbr: 79 S9-766-Rv. B, -May-9 3

4 ( t Si375V YPICAL CHARACERISICS 5 C, ulss othrwis otd 6. I S - Sour Currt (A). J = 5 C J = 5 C R S(o ) - rai-to-sour (Ω) V S - Sour-to-rai Voltag (V) Sour-rai iod Forward Voltag V GS - Gat-to-Sour Voltag (V) O-Rsista vs. Gat-to-Sour Voltag V G S h ) ( V ).. I = 5 µa I = 5 ma (W) Powr J - mpratur ( C) hrshold Voltag. im (s) Sigl Puls Powr, Jutio-to-Ambit Limitd by R S(o)* (A) rai Currt I -. Sigl Puls ms ms ms s s C. V S - rai-to-sour Voltag (V) * V GS miimum V GS at whih R S(o) is spifid Saf Opratig Ara oumt Numbr: 79 S9-766-Rv. B, -May-9

5 Si375V YPICAL CHARACERISICS 5 C, ulss othrwis otd..9 Powr (W) C - Cas mpratur ( C) Currt ratig* (W) Powr..6 Powr (W) C - Cas mpratur ( C) Powr, Jutio-to-Foot A - Ambit mpratur ( C) Powr ratig, Jutio-to-Ambit * h powr dissipatio P is basd o J(max) = 5 C, usig jutio-to-as thrmal rsista, ad is mor usful i sttlig th uppr dissipatio limit for ass whr additioal hatsikig is usd. It is usd to dtrmi th urrt ratig, wh this ratig falls blow th pakag limit. oumt Numbr: 79 S9-766-Rv. B, -May-9 5

6 i t t i l i f f i t Si375V YPICAL CHARACERISICS 5 C, ulss othrwis otd uty Cyl =.5 s t i r a f f l i a d v p m l I d E m a r N o r m a z h.. Nots:. P M 5 t t t. uty Cyl, = t. Pr Uit Bas = R thja = 75 C/W 3. JM - A = P M Z (t) thja Sigl Puls. Surfa Moutd Squar Wav Puls uratio (s) Normalizd hrmal rasit Impda, Jutio-to-Ambit uty Cyl =.5 s r a a d v p m l I d E m a r N o r m a z h Sigl Puls Squar Wav Puls uratio (s) Normalizd hrmal rasit Impda, Jutio-to-Foot maitais worldwid maufaturig apability. Produts may b maufaturd at o of svral qualifid loatios. Rliability data for Silio hology ad Pakag Rliability rprst a omposit of all qualifid loatios. For rlatd doumts suh as pakag/tap drawigs, part markig, ad rliability data, s /ppg?79. 6 oumt Numbr: 79 S9-766-Rv. B, -May-9

7 Lgal islaimr Noti Vishay islaimr ALL PROUC, PROUC SPECIFICAIONS AN AA ARE SUBJEC O CHANGE WIHOU NOICE O IMPROVE RELIABILIY, FUNCION OR ESIGN OR OHERWISE. Vishay Itrthology, I., its affiliats, agts, ad mploys, ad all prsos atig o its or thir bhalf (olltivly, Vishay ), dislaim ay ad all liability for ay rrors, iaurais or iompltss otaid i ay datasht or i ay othr dislosur rlatig to ay produt. Vishay maks o warraty, rprstatio or guarat rgardig th suitability of th produts for ay partiular purpos or th otiuig produtio of ay produt. o th maximum xtt prmittd by appliabl law, Vishay dislaims (i) ay ad all liability arisig out of th appliatio or us of ay produt, (ii) ay ad all liability, iludig without limitatio spial, osqutial or iidtal damags, ad (iii) ay ad all implid warratis, iludig warratis of fitss for partiular purpos, o-ifrigmt ad mrhatability. Statmts rgardig th suitability of produts for rtai typs of appliatios ar basd o Vishay s kowldg of typial rquirmts that ar oft plad o Vishay produts i gri appliatios. Suh statmts ar ot bidig statmts about th suitability of produts for a partiular appliatio. It is th ustomr s rsposibility to validat that a partiular produt with th proprtis dsribd i th produt spifiatio is suitabl for us i a partiular appliatio. Paramtrs providd i datashts ad / or spifiatios may vary i diffrt appliatios ad prforma may vary ovr tim. All opratig paramtrs, iludig typial paramtrs, must b validatd for ah ustomr appliatio by th ustomr s thial xprts. Produt spifiatios do ot xpad or othrwis modify Vishay s trms ad oditios of purhas, iludig but ot limitd to th warraty xprssd thri. Expt as xprssly idiatd i writig, Vishay produts ar ot dsigd for us i mdial, lif-savig, or lif-sustaiig appliatios or for ay othr appliatio i whih th failur of th Vishay produt ould rsult i prsoal ijury or dath. Customrs usig or sllig Vishay produts ot xprssly idiatd for us i suh appliatios do so at thir ow risk. Plas otat authorizd Vishay prsol to obtai writt trms ad oditios rgardig produts dsigd for suh appliatios. No lis, xprss or implid, by stoppl or othrwis, to ay itlltual proprty rights is gratd by this doumt or by ay odut of Vishay. Produt ams ad markigs otd hri may b tradmarks of thir rsptiv owrs. 7 VISHAY INERECHNOLOGY, INC. ALL RIGHS RESERVE Rvisio: 8-Fb-7 oumt Numbr: 9