N-Channel 30 V (D-S) MOSFET

Size: px
Start display at page:

Download "N-Channel 30 V (D-S) MOSFET"

Transcription

1 Si47H N-Chl V (-S) MOSFET PROUCT SUMMARY V S (V) R S(o) (Ω) I (A) Q g (Typ.) G.57 t V GS = V t V GS = 4.5 V 4.7 SOT- SC-7 (-LEAS) 5 4 S Mrkig Cod AL XX Lot Tr b ility d t Cod Prt # Cod Y Y FEATURES Hlog-fr Aordig to IEC 49-- fiitio TrhFET Powr MOSFET % R g d UIS Tstd Complit to RoHS irtiv /95/EC APPLICATIONS Lod Swith for Portbl vis Top V i w Ordrig Iformtio: Si47H-T-E (Ld (Pb-fr) Si47H-T-GE (Ld (Pb-fr d Hlog-fr) ABSOLUTE MAXIMUM RATINGS T A = 5 C, ulss othrwis otd Prmtr Symbol Limit Uit ri-sour Voltg V S V Gt-Sour Voltg V GS ± T C = 5 C 5. Cotiuous ri Currt (T J = 5 C) T C = 7 C 4.5 I T A = 5 C 4. b, A T A = 7 C.4 b, Pulsd ri Currt I M 5 Avlh Currt I AS L =. mh Rptitiv Avlh Ergy E AS 5 mj T C = 5 C. Cotiuous Sour-ri iod Currt I S A T A = 5 C. b, T C = 5 C.8 Mximum Powr issiptio T C = 7 C.8 P W T A = 5 C.5 b, T A = 7 C. b, Oprtig Jutio d Storg Tmprtur Rg T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Prmtr Symbol Typil Mximum Uit Mximum Jutio-to-Ambit b, d t 5 s R thja 8 Mximum Jutio-to-Foot (ri) Stdy R thjf 4 45 C/W Nots:. Bsd o T C = 5 C. b. Surf Moutd o " x " FR4 bord.. t = 5 s. d. Mximum udr stdy stt oditios is 5 C/W. oumt Numbr: 789 S-4-Rv. C, -Mr-

2 Si47H SPECIFICATIONS T J = 5 C, ulss othrwis otd Prmtr Symbol Tst Coditios Mi. Typ. Mx. Uit Stti ri-sour Brkdow Voltg V S V GS = V, I = 5 µa V V S Tmprtur Coffiit ΔV S /T J 5.5 I = 5 µa V GS(th) Tmprtur Coffiit ΔV GS(th) /T J 5. mv/ C Gt-Sour Thrshold Voltg V GS(th) V S = V GS, I = 5 µa V Gt-Sour Lkg I GSS V S = V, V GS = ± V ± A V S = V, V GS = V A Zro Gt Voltg ri Currt I SS V S = V, V GS = V, T J = 85 C µa O-Stt ri Currt I (o) V S = 5 V, V GS = V 5 A ri-sour O-Stt Rsist V GS = V, I = 4. A.4.57 R S(o) V GS = 4.5 V, I =.5 A.5.8 Ω Forwrd Trsodut g fs V S = 5 V, I = 4. A 8.5 S ymi b Iput Cpit C iss 8 Output Cpit C oss V S = 5 V, V GS = V, f = MHz 75 pf Rvrs Trsfr Cpit C rss 45 V S = 5 V, V GS = V, I = 4. A 7 Totl Gt Chrg Q g. 5 C Gt-Sour Chrg Q gs V S = 4V, V GS = 4.5 V, I = 4. A. Gt-ri Chrg Q gd. Gt Rsist R g f = MHz 7.. Ω Tur-O ly Tim t d(o) 7. Ris Tim t r V = 5 V, R L = 4.4 Ω 5 84 Tur-Off lytim t d(off) I.4 A, V GEN = V, R g = Ω 8 7 s Fll Tim t f Tur-O ly Tim t d(o) 5 Ris Tim t r V = 5 V, R L = 5.4 Ω 95 4 Tur-Off lytim t d(off) I.8 A, V GEN = 4.5 V, R g = Ω 8 s Fll Tim t f 7 ri-sour Body iod Chrtristis Cotious Sour-ri iod Currt I S T C = 5 C. Puls iod Forwrd Currt I SM 5 A Body iod Voltg V S I S =.8 A.8. V Body iod Rvrs Rovry Tim t rr. 9 C Body iod Rvrs Rovry Chrg Q rr I F =. A, di/dt = A/µs Rvrs Rovry Fll Tim t 7. s Rvrs Rovry Ris Tim t b 4.7 Nots:. Puls tst; puls width µs, duty yl %. b. Gurtd by dsig, ot subjt to produtio tstig. Strsss byod thos listd udr Absolut Mximum Rtigs my us prmt dmg to th dvi. Ths r strss rtigs oly, d futiol oprtio of th dvi t ths or y othr oditios byod thos iditd i th oprtiol stios of th spifitios is ot implid. Exposur to bsolut mximum rtig oditios for xtdd priods my fft dvi rlibility. oumt Numbr: 789 S-4-Rv. C, -Mr-

3 Si47H TYPICAL CHARACTERISTICS T A = 5 C, ulss othrwis otd 5 V GS = V thru 5 V I - ri Currt (A) 9 V GS = 4 V I - ri Currt (A) T C = 5 C V GS = V V S - ri-to-sour Voltg (V) Output Chrtristis. 5 T = 5 C C T C = - 55 C 4 5 V GS - Gt-to-Sour Voltg (V) Trsfr Chrtristis Curvs vs. Tmprtur - O-Rsist (Ω) R S(o) V GS = 4.5 V V GS = V C - Cpit (pf) 4 C oss C iss. 9 5 I - ri Currt (A) O-Rsist vs. ri Currt C rss 8 4 V S - ri-to-sour Voltg (V) Cpit.8 I = 4. A - Gt-to-Sour Voltg (V) V GS 8 4 V S = 5 V V GS = 4 V - O-Rsist R S(o) (Normlizd).5..9 V GS = V I = 4. A V GS = 4.5 V I =.4 A 4 8 Q g - Totl Gt Chrg (C) Gt Chrg T J - Jutio Tmprtur ( C) O-Rsist vs. Jutio Tmprtur oumt Numbr: 789 S-4-Rv. C, -Mr-

4 Si47H TYPICAL CHARACTERISTICS T A = 5 C, ulss othrwis otd. - Sour Currt (A) I S... T J = 5 C T J = 5 C.4..8 V S - Sour-to-ri Voltg (V) Sour-ri iod Forwrd Voltg. R S(o ) - ri-to-sour O-Rsist (Ω) I = 4. A.8 T A = 5 C. T A = 5 C V GS - Gt-to-Sour Voltg (V) R S(o) vs. V GS vs. Tmprtur I = 5 µa V G S(th ) (V )..8 P o w r (W) T J - Tmprtur ( C) Thrshold Voltg... Tim (s) Sigl Puls Powr Limitd by R S(o) * - ri Currt (A) I. P(t) = ms P(t) = ms P(t) = s P(t) = s C T A = 5 C Sigl Puls. BVSS Limitd. V S - ri-to-sour Voltg (V) *V GS > miimum V GS t whih R S(o) is spifid Sf Oprtig Ar, Jutio-to-Ambit 4 oumt Numbr: 789 S-4-Rv. C, -Mr-

5 Si47H TYPICAL CHARACTERISTICS T A = 5 C, ulss othrwis otd I - ri Currt (A) 4... Pkg Limitd Powr (W) T C - Cs Tmprtur ( C) Currt rtig* T C - Cs Tmprtur ( C) Powr rtig * Th powr dissiptio P is bsd o T J(mx) = 5 C, usig jutio-to-s thrml rsist, d is mor usful i sttlig th uppr dissiptio limit for ss whr dditiol htsikig is usd. It is usd to dtrmi th urrt rtig, wh this rtig flls blow th pkg limit. oumt Numbr: 789 S-4-Rv. C, -Mr- 5

6 l i f f t i i t Si47H TYPICAL CHARACTERISTICS T A = 5 C, ulss othrwis otd s f f t i l i i t r T d v p m l I d E m r N o r m T z h.. uty Cyl = T JM - T A = P M Z (t) thja Sigl Puls 4. Surf Moutd Nots: Squr Wv Puls urtio (s) Normlizd Thrml Trsit Impd, Jutio-to-Ambit P M t t t. uty Cyl, = t. Pr Uit Bs = R thja = C/W s r T d v p m l I d E m r N o r m T z h. uty Cyl = Sigl Puls Squr Wv Puls urtio (s) Normlizd Thrml Trsit Impd, Jutio-to-Foot mitis worldwid mufturig pbility. Produts my b mufturd t o of svrl qulifid lotios. Rlibility dt for Silio Thology d Pkg Rlibility rprst omposit of ll qulifid lotios. For rltd doumts suh s pkg/tp drwigs, prt mrkig, d rlibility dt, s /ppg?789. oumt Numbr: 789 S-4-Rv. C, -Mr-

7 Lgl islimr Noti Vishy islimr All produt spifitios d dt r subjt to hg without oti. Vishy Itrthology, I., its ffilits, gts, d mploys, d ll prsos tig o its or thir bhlf (olltivly, Vishy ), dislim y d ll libility for y rrors, iuris or iompltss otid hri or i y othr dislosur rltig to y produt. Vishy dislims y d ll libility risig out of th us or pplitio of y produt dsribd hri or of y iformtio providd hri to th mximum xtt prmittd by lw. Th produt spifitios do ot xpd or othrwis modify Vishy s trms d oditios of purhs, iludig but ot limitd to th wrrty xprssd thri, whih pply to ths produts. No lis, xprss or implid, by stoppl or othrwis, to y itlltul proprty rights is grtd by this doumt or by y odut of Vishy. Th produts show hri r ot dsigd for us i mdil, lif-svig, or lif-sustiig pplitios ulss othrwis xprssly iditd. Customrs usig or sllig Vishy produts ot xprssly iditd for us i suh pplitios do so tirly t thir ow risk d gr to fully idmify Vishy for y dmgs risig or rsultig from suh us or sl. Pls ott uthorizd Vishy prsol to obti writt trms d oditios rgrdig produts dsigd for suh pplitios. Produt ms d mrkigs otd hri my b trdmrks of thir rsptiv owrs. oumt Numbr: 9 Rvisio: 8-Jul-8

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET ie8f Vishy ilioix N-Chl -V (-) MOFET PROUCT UMMARY V (V) Pkg rwig /do?73398 9 G I (A) ilio Pkg R (o) (Ω) Limit Limit.34 t V G = V 38 5.55 t V G = 4.5 V 8 5 8 7 6 PolrPAK 6 7 8 9 Q g (Typ.) 4 C FEATURE

More information

Dual P-Channel 12 V (D-S) MOSFET

Dual P-Channel 12 V (D-S) MOSFET Si965DH Dual P-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) Q g (Typ.) S - 0.535 at V GS = -.5 V -..7 C 0.390 at V GS = -.5 V -.3 a 0.70 at V GS = -.8 V -. SOT-363 SC-70 (6-LEADS) 6

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Si97DH Dual N-Chal V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) a Q g (Typ.) SOT-6 SC-7 (6-LEADS).5 at V GS =.5 V. a.5 C.5 at V GS =.5 V. a FEATURES Halog-fr Aordig to IEC 69-- Dfiitio TrhFET

More information

FEATURES. Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 20 T C = 25 C. T C = 70 C 30 I 17.

FEATURES. Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 20 T C = 25 C. T C = 70 C 30 I 17. N-Chl Rdud Q g, Fst withig MOFET i739p PROUCT UMMRY V (V) R (o) ( ) I () Q g (Typ.) 3 8 7 6.75 t V G = V 3.5 t V G = 4.5 V 3 PowPK O-8 5 6.5 mm 5.5 mm 3 G 4 Bottom Viw Odig Ifomtio: i739p-t-e3 (Ld (Pb)-f)

More information

P-Channel 200-V (D-S) MOSFET

P-Channel 200-V (D-S) MOSFET Si375V P-Chal -V (-S) MOSFE PROUC SUMMARY V S (V) R S(o) (Ω) I (A) a Q g (yp.).6 at V GS = - V -.95-8 C.65 at V GS = - 6 V -.93 FEAURES Halog-fr Aordig to IEC 69-- fiitio rhfe Powr MOSFE % R g ad UIS std

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs

More information

N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and

More information

P-Channel 40-V (D-S), 175 C MOSFET

P-Channel 40-V (D-S), 175 C MOSFET P-Chl 4-V (D-S), 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(o) (Ω) I D (A) Q g (Typ.) - 4.34 t V GS = V - 2 4.3 C.45 t V GS = 4.5 V - 9.2 FEATURES ThFET Pow MOSFET % R g d UIS Tstd APPLICATIONS LCD TV Ivt

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

20-V N-Channel 1.8-V (G-S) MOSFET

20-V N-Channel 1.8-V (G-S) MOSFET -V N-Channl.8-V (G-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).37 at V G = 4. V 7.3.39 at V G =. V 7..43 at V G =.8 V 6.8 FEATURE TrnchFET Powr MOFET MICRO FOOT Chipscal Packaging Rducs Footprint Ara

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3

More information

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVSS RSON (MX.) I 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

N-Channel 12 V (D-S) MOSFET

N-Channel 12 V (D-S) MOSFET New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET i5c Vishy ilinix NChnnl 3 V () MOFET PROUCT UMMARY V (V) R (n) (Ω) I (A).35 t V G = V ± 6.7 3.55 t V G =.5 V ± 5.3 FEATURE Hlgnfr Arding t IEC 69 finitin TrnhFET Pwr MOFETs Cmplint t RH irtiv /95/EC 6

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According

More information

P-Channel 2.5 V (G-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power

More information

Current Sensing MOSFET, N-Channel 30-V (D-S)

Current Sensing MOSFET, N-Channel 30-V (D-S) New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT

More information

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless

More information

Complementary MOSFET Half-Bridge (N- and P-Channel)

Complementary MOSFET Half-Bridge (N- and P-Channel) New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested

More information

N-Channel 20-V (D-S) Fast Switching MOSFET

N-Channel 20-V (D-S) Fast Switching MOSFET N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:

More information

P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I

More information

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.

G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0. N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from

More information

AO4620 Complementary Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

TrenchT2 TM Power MOSFET

TrenchT2 TM Power MOSFET Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated V DSS I D25 R DS(on) TO-263 (IXTA) = V = A 7mΩ Symbol Test Conditions Maximum Ratings V DSS T J = 25

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

N-Channel 30-V (D-S) MOSFET with Schottky Diode

N-Channel 30-V (D-S) MOSFET with Schottky Diode New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition

More information

N-Channel 250 V (D-S) MOSFET

N-Channel 250 V (D-S) MOSFET N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration

More information

AO V Dual P + N-Channel MOSFET

AO V Dual P + N-Channel MOSFET 4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

SIPMOS Small-Signal Transistor BSP 149

SIPMOS Small-Signal Transistor BSP 149 SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration

More information

IXTT3N200P3HV IXTH3N200P3HV

IXTT3N200P3HV IXTH3N200P3HV Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N and PChannel 3 V (DS) MOSFET Si539DDL D 6 SOT363 SC7 Dual (6 leads) S 4 G 5 FEATURES TrenchFET power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor

More information

TrenchT2 TM Power MOSFET

TrenchT2 TM Power MOSFET Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET

More information

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe

More information

TrenchMV TM Power MOSFET

TrenchMV TM Power MOSFET TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum

More information

N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM

More information

IXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified

IXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified Advance Technical Information X2-Class HiPerFET TM Power MOSFET AEC Q Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode IXFH42N5X2A V SS = 5V I 25 = 42A 72m R S(on) TO-247 Symbol

More information