2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK. Outline. Base UMT3. Base. Package size (mm) Taping code
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1 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K PNP 50m -50V Gnral Purpos Transistors Datasht Outlin Paramtr V CO I C Valu 50V 150m VMT3 MT3F Collctor Bas Bas mittr mittr Collctor Faturs 1) Gnral Purpos. 2) Complmntary NPN Typs : 2SC5658 (VMT3) / 2SC4617B (MT3F) / 2SC4617 (MT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complx transistors : MT1 / MT2 / MT3 (MT6) / UMT1N / UMT2N (UMT6) / IMT1 / IMT2 / IMT3 (SMT6) 4) Lad Fr/RoHS Compliant. MT3 UMT3F UMT3 Bas 2S2029 (SC05) 2S1774 SOT-416 (SC-75) Bas mittr mittr Collctor Collctor SMT3 Bas Bas 2S1774B (SC-89) mittr Collctor 2S1576UB (SC-85) mittr Collctor Innr circuit Collctor Bas 2S1576 SOT-323 (SC-70) pplications Switching circuit, LD drivr circuit 2S1037K SOT-346 (SC-59) mittr Packaging spcifications Part No. *1 x : h F rank Packag Packag siz (mm) Taping cod Rl siz (mm) 2S2029 VMT T2L 180 2S1774B MT3F 1616 TL 180 2S1774 MT TL 180 Tap width (mm) 2S1576 UMT T S1037K SMT T Basic ordring unit (pcs) 8 3, ,000 2S1576UB UMT3F 2021 TL ,000 Marking 8 8,000 Fx *1 Fx *1 Fx *1 Fx *1 3,000 Fx *1 3,000 Fx * ROHM Co., Ltd. ll rights rsrvd. 1/ Rv.D
2 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht bsolut maximum ratings (Ta = 25 C) Collctor-bas voltag Collctor-mittr voltag mittr-bas voltag Collctor currnt Junction tmpratur Rang of storag tmpratur Paramtr Symbol Valus Unit V BO 6 V I CP *1 2S2029 2S1774B Powr dissipation 2S1774 2S1576UB *2 P D 2S1576 2S1037K V CBO 60 V V CO 50 V m I C 150 m T j 150 mw mw C T stg 55 to 150 C lctrical charactristics(ta = 25 C) Paramtr Symbol Conditions Min. Typ. Max. Unit Collctor-mittr brakdown voltag BV CO I C = 1m V Collctor-bas brakdown voltag BV CBO I C = V mittr-bas brakdown voltag BV BO I = V Collctor cut-off currnt I CBO V CB = 60V n mittr cut-off currnt I BO V B = 6V n Collctor-mittr saturation voltag V C(sat) I C = 50m, I B = 5m V DC currnt gain h F V C = 6V, I C = 1m Transition frquncy f T V C = 12V, I = 2m f=100mh Z Output capacitanc C ob V CB = 12V, I = 0m f = 1MHz *1 P W =10ms Singl Puls *2 ach trminal mountd on a rfrnc footprint MHz pf - h F rank catgoris Rank Q R S h F 120 to to to ROHM Co., Ltd. ll rights rsrvd. 2/ Rv.D
3 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht lctrical charactristic curvs(ta = 25 C) Fig.1 Ground mittr Propagation Charactristics Fig.2 Typical Output Charactristics BS TO MITTR VOLTG : V B [V] COLCTOR TO MITT VOLTG : V C [V] Fig.3 DC Currnt Gain vs. Collctor Currnt(I) Fig.4 DC Currnt Gain vs. Collctor Currnt(II) DC CURRNT GIN : h F DC CURRNT GIN : h F 2014 ROHM Co., Ltd. ll rights rsrvd. 3/ Rv.D
4 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht lctrical charactristic curvs(ta = 25 C) Fig.5 Collctor-mittr Saturation Voltag vs. Collctor Currnt (I) Fig.6 Collctor-mittr Saturation Voltag vs. Collctor Currnt (II) COLLCTOR-MITTR STURTION VOLTG : V C(sat) [V] COLLCTOR-MITTR STURTION VOLTG : V C(sat) [V] BS-MITTR STURTION VOLTG : V B(sat) [V] Fig.7 Bas-mittr Saturation Voltag vs. Collctor Currnt 0 I C /I B = 10/1 Ta= 40ºC 25ºC 100ºC TRNSITION FRQUNCY : f T [MHz] Fig.8 Gain Bandwidth Product vs. mittr Currnt MITTR CURRNT :I [m] 2014 ROHM Co., Ltd. ll rights rsrvd. 4/ Rv.D
5 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht lctrical charactristic curvs(ta = 25 C) COLLCTOR OUTPUT CPCITNC : Cob [pf] MITTR INPUT CPCITNC : Cib [pf] Fig.9 mittr input capacitanc vs. mittr-bas Voltag Collctor output capacitanc vs. Collctor-Bas Voltag COLLCTOR - BS VOLTG : V CB [V] MITTR - BS VOLTG : V B [V] Fig.10 Saf Oprating ra S ms DC (Mountd on a rfrnc land) 1ms 10ms Ta=25ºC Singl non rptitiv puls COLLCTOR TO MITTR VOLTG : V C [ V] Fig.11 Saf Oprating ra S1774B 100ms DC (Mountd on a rfrnc land) 1ms 10ms Ta=25ºC Singl non rptitiv puls Fig.12 Saf Oprating ra S ms DC (Mountd on a rfrnc land) 1ms 10ms Ta=25ºC Singl non rptitiv puls COLLCTOR TO MITTR VOLTG : V C [V] COLLCTOR TO MITTR VOLTG : V C [V] 2014 ROHM Co., Ltd. ll rights rsrvd. 5/ Rv.D
6 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht lctrical charactristic curvs(ta = 25 C) Fig.13 Saf Oprating ra S1576UB 10ms 100ms DC (Mountd on a rfrnc land) 1ms Ta=25ºC Singl non rptitiv puls Fig.14 Saf Oprating ra S ms 100ms DC (Mountd on a rfrnc land) 1ms Ta=25ºC Singl non rptitiv puls COLLCTOR TO MITTR VOLTG : V C [V] COLLCTOR TO MITTR VOLTG : V C [ V] Fig.15 Saf Oprating ra S1037K 10ms 100ms DC (Mountd on a rfrnc land) 1ms Ta=25ºC Singl non rptitiv puls COLLCTOR TO MITTR VOLTG : V C [V] 2014 ROHM Co., Ltd. ll rights rsrvd. 6/ Rv.D
7 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) VMT3 D b1 c H L Lp b x S b3 1 1 S b2 MIN MX MIN MX b b c D H L Lp x MIN MX MIN MX b b Dimnsion in mm / inchs Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] 2014 ROHM Co., Ltd. ll rights rsrvd. 7/ Rv.D
8 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) MT3F D H L Lp x S b c S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MIN MX MIN MX b c D H L Lp x MIN MX MIN MX b Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 8/ Rv.D
9 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) MT3 D b1 c Q Lp H L1 b x S 3 b3 1 1 S b2 Dimnsion in mm / inchs Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MIN MX MIN MX b b c D H L Lp Q x MIN MX MIN MX b b ROHM Co., Ltd. ll rights rsrvd. 9/ Rv.D
10 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) UMT3F D H L Lp x S b c 1 2 S 1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MIN MX MIN MX b c D H L Lp x MIN MX MIN MX b Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 10/ Rv.D
11 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) UMT3 D Q c L1 Lp b x S 3 H 1 1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MIN MX MIN MX b c D H L Lp Q x MIN MX MIN MX b Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 11/ Rv.D
12 2S2029 / 2S1774B / 2S1774 / 2S1576UB / 2S1576 / 2S1037K Data Sht Dimnsions (Unit : mm) SMT3 D c Q L1 Lp b x S 3 H 1 1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] MIN MX MIN MX b c D H L Lp Q x y MIN MX MIN MX b Dimnsion in mm / inchs 2014 ROHM Co., Ltd. ll rights rsrvd. 12/ Rv.D
13 Notic Nots 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : lthough ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. xampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. V/O dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US xport dministration Rgulations and th Forign xchang and Forign Trad ct. 14) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm ROHM Co., Ltd. ll rights rsrvd. R1102
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DG3537, DG3538, DG3539, DG , 360 MHz, Dual SPST Analog Switches. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS
4, 360 MHz, Dual SPST nalog Switchs DESRIPTION Th DG3537, DG3538, DG3539, DG3540 ar dual SPST analog switchs which oprat from.8 V to 5.5 V singl rail powr supply. Thy ar dsign for audio, vido, and US switching
256K (32K x 8) OTP EPROM AT27C256R
Faturs Fast Rad Accss Tim 45 ns Low-Powr CMOS Opration 100 µa Max Standby 20 ma Max Activ at 5 MHz JEDEC Standard Packags 28-lad PDIP 32-lad PLCC 28-lad TSOP and SOIC 5V ± 10% Supply High Rliability CMOS
NLX2G00. Dual 2-Input NAND Gate
ual 2-Input NN Gat Th NLX2G00 is an advancd high-spd dual 2-input CMOS NN gat in ultra-small footprint. Th NLX2G00 input structurs provid protction whn voltags up to 7.0 volts ar applid, rgardlss of th
7WB Bit Bus Switch. The 7WB3306 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch Th WB3306 is an advancd high spd low powr 2 bit bus switch in ultra small footprints. Faturs High Spd: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connction Btwn 2 Ports Powr Down Protction
SiC Power Module BSM180D12P2C101
SiC Power Module Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching loss. 7(N.C)
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU
SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package
NLU2G17. Dual Non-Inverting Schmitt-Trigger Buffer
NLU2G7 ual Non-Invrting Schmitt-Triggr Buffr Th NLU2G7 MiniGat is an advancd high spd CMOS dual non invrting Schmitt triggr buffr in ultra small footprint. Th NLU2G7 input and output structurs provid protction
DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High
SP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging
SP490/SP491 Full uplx RS-485 Transcivrs FTURS +5V Only Low Powr icmos rivr/rcivr nal (SP491) RS-485 and RS-422 rivrs/rcivrs Pin Compatil with LTC490 and SN75179 (SP490) Pin Compatil with LTC491 and SN75180
V D Y. Recommended Solder Pattern. Tolerance : ±0.2 (unit : mm) Absolute Maximum Ratings (Ta=25ºC) Reverse Operating Temp. Storage Temp.
SLR-56x Series Data Sheet Features Viewing angle 2θ 1/2 : 40 Outline Color Type V D Y M Dimensions Recommended Solder Pattern 5.5 φ5.0 ±0.1 8.7 2.5 or 5.0 0.5 24.0Min. (2.5) Cathode Tolerance : ±0.2 (unit
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery
SiC Power Module BSM600D12P3G001. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module BSM6D2P3G Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss.
General Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
Electronic Circuits. BJT Amplifiers. Manar Mohaisen Office: F208 Department of EECE
Elctronic Circuits BJT mplifirs Manar Mohaisn Offic: F208 Email: manar.subhi@kut.ac.kr Dpartmnt of EECE viw of th Prcdnt Lctur Explain th DC Oprating Point Explain th Voltag-dividr Bias Othr Bias Mthods
TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
NLX1G10. 3-Input NAND Gate
NG0 3-Input NN Gat Th NG0 is an advancd high spd 3 input MOS NN gat in ultra small footprint. Th NG0 input structurs provid protction whn voltags up to 7.0 V ar applid, rgardlss of th supply voltag. Faturs
SiC Power Module BSM600D12P3G001. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss. 6 5 NTC
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H
TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum
DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
COMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026
TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj
SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small
2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200
High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
Surface Mount RF Schottky Barrier Diodes. Technical Data. GUx. HSMS-281x Series
Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28x Series Features Surface Mount Packages Low Flicker Noise Low FIT (Failure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad Versions
150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
SLI-570 / SLA-570 Series
Features Outline Viewing angle 2θ /2 : (SLI-570 Series) Viewing angle 2θ /2 : 25 (SLA-570 Series) High brightness Color Type U U2 D Y Y2 M Dimensions Recommended Solder Pattern Tolerance : 0.2 (unit :
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
HD74LS21FPEL. Dual 4-input Positive AND Gates. Features. Pin Arrangement. Circuit Schematic (1/2) REJ03D Rev.2.00 Feb.18.
H4S2 ual 4-input Positiv N Gats RJ03040 0200 Rv.2.00 Fb.8.2005 Faturs Ordring Information Part Nam H4S2P H4S2FP Pakag Typ IP-4 pin SOP-4 pin (JIT) Pakag Cod (Prvious Cod) PRP004B-B (P-4V) PRSP004F-B (FP-4V)
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
IS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to