SiC Power Module BSM180D12P2C101

Transcription

1 SiC Power Module Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching loss. 7(N.C) *Do not connnect to NC pin. ) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS from ROHM. Dimensions & Pin layout (Unit : mm) (M. FOR SELF-TAPPING SCREW) 3 ROHM Co., Ltd. All rights reserved. / Rev.D

2 Absolute maximum ratings (Tj = C) Parameter Symbol Conditions Limit Unit Drain-source voltage V DSS G-S short V Gate-source voltage( ) D-S short V V GSS Gate-source voltage( ) D-S short V G - S Voltage (tsurge<3nsec) V GSSsurge D-S short to C Drain current * I D DC(Tc= C) 4 A I DRM Pulse (Tc= C) ms * 3 A I S Tc= C V GS =8V 4 A Source current * Pulse (Tc= C) ms V A I GS =8V * 3 SRM Pulse (Tc= C) s V GS =V * 3 A Total power disspation * 4 Ptot Tc= C 7 W Max Junction Temperature Tjmax 4 to C Storage temperature Tstg 4 to C Isolation voltage Visol Terminals to baseplate, f=hz AC min. Vrms Mounting torque Main Terminals : M screw 4. N m Mounting to heat shink : M screw 3. N m (*) Case temperature (T c ) is defined on the surface of base plate just under the chips. (*) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T j is less than 7 C Example of acceptable VGS waveform V t surge V V t surge V V 3 ROHM Co., Ltd. All rights reserved. / Rev.D

3 Electrical characteristics (Tj= C) Parameter Symbol Conditions Min. Typ. Max. Unit Tj= C Static drain-source on-state V Tj= C voltage DS(on) I C =8A, V GS =8V V Tj= C - 3. Drain cutoff current I DSS V DS =V, V GS =V - - A Source-drain voltage Tj= C Tj= C -. - Tj= C Tj= C Tj= C Tj= C Gate-source threshold voltage V GS(th) V DS =V, I D =3.mA..7 4 V V GS =V, V DS =V - -. Gate-source leakage current I GSS V GS = V, V DS =V. - - A td(on) V GS(on) =8V, V GS(off) =V tr V DS =V Switching characteristics trr I D =8A - - ns td(off) R G = tf inductive load Input capacitance Ciss V DS =V, V GS =V, f=mhz nf Internal gate resistor R Gint Tj= C -. - Stray Inductance Ls - - nh Creepage Distance Clearance Distance Junction-to-case thermal resistance Case-to-heat sink Thermal resistance V SD Rth(c-f) Terminal to heat sink -. - mm Terminal to terminal mm Terminal to heat sink mm Terminal to terminal mm Rth(j-c) DMOS (/ module) * (*4) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*) Measurement of Tc is to be done at the point just under the chip. (*) Typical value is measured by using thermally conductive grease of λ=.9w/(m K). (*7) SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. (*8) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one. - - V GS =V, I S =8A V GS =8V, I S =8A - -. Case to heat sink, per module, Thermal grease appied * VDS ID VGS % % % td(on) <Wavelength for Switching Test> Eon=Id Vds 9% tr trr 9% % % % % 9% td(off) Eoff=Id Vds tf V C/W % Vsurge 3 ROHM Co., Ltd. All rights reserved. 3/ Rev.D

4 Fig. Typical Output Characteristics Fig. Drain-Source Voltage vs. Drain Current Drain Current : I D [A] V GS =V V GS =8V V GS =V V GS =4V V GS =V V GS =V Drain-Source Voltage : V DS V GS =8V T j =ºC T j =ºC T j =ºC Drain-Source Voltage : V DS Drain Current : I D [A] Fig.3 Drain-Source Voltage vs. Gate-Source Voltage 8 7 T j =ºC Fig.4 Ron vs Junction Temperature.4 Drain-Source Voltage : V DS 4 I D =8A 3 I D =A I D =8A I D =4A Ron [ ].3.. V GS =4V V GS =V V GS =V V GS =8V V GS =V I D =8A Gate-Source Voltage : V GS Junction Temperature : Tj [ºC] 3 ROHM Co., Ltd. All rights reserved. 4/ Rev.D

5 Fig. Drain Current vs. Gate-Source Voltage Fig. Drain Current vs. Gate-Source Voltage T j =ºC T j =ºC T j =ºC 3 3 V GS =V V GS =8V Drain Current : I D [A] T j =ºC T j =ºC V GS =V T j =ºC V GS =8V 4 Drain Current : I D [A] 4 8 T j =ºC T j =ºC T j =ºC T j =ºC T j =ºC T j =ºC 4 Gate-Source Voltage : V GS Gate-Source Voltage : V GS Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage 3.E+3 Drain Current : I D [A] V DS =V T j =ºC T j =ºC T j =ºC Drain Current : I D [A].E+.E+.E+.E-.E-.E-3 V DS =V T j =ºC T j =ºC T j =ºC.E-4 Gate-Source Voltage : V GS Gate-Source Voltage : V GS 3 ROHM Co., Ltd. All rights reserved. / Rev.D

6 Fig.9 Switching Characteristics [ Tj=ºC ] Fig. Switching Characteristics [ Tj=ºC ] td(off) tr tr tf td(off) tf Switching Time : t [ns] td(on) V DS =V V GS(on) =8V V GS(off) =V R G =. 3 4 Switching Time : t [ns] td(on) V DS =V V GS(on) =8V V GS(off) =V R G =. 3 4 Drain Current : I D [A] Drain Current : I D [A] Fig. Switching Loss vs. Drain Current [ Tj=ºC ] 3 Fig. Switching Loss vs. Drain Current [ Tj=ºC ] 3 Switching Loss [mj] V DS =V V GS(on) =8V V GS(off) =V R G =. E on E off Switching Loss [mj] V DS =V V GS(on) =8V V GS(off) =V R G =. E on E off E rr 3 4 E rr 3 4 Drain Current : I D [A] Drain Current : I D [A] 3 ROHM Co., Ltd. All rights reserved. / Rev.D

7 Fig.3 Recovery Characteristics vs. Drain Current [ Tj=ºC ] Fig.4 Recovery Characteristics vs. Drain Current [ Tj=ºC ] Recovery Time : trr [ns] V DS =V V GS(on) =8V V GS(off) =V R G =. 3 4 Irr trr Recovery Current : Irr [A] Recovery Time : trr [ns] V DS =V V GS(on) =8V V GS(off) =V R G =. 3 4 Irr trr Recovery Current : Irr [A] Drain Current : I D [A] Drain Current : I D [A] Switching Time : t [ns] Fig. Switching Characteristics vs. Gate Resistance [ Tj=ºC ] V DS =V I D =8A V GS(on) =8V V GS(off) =V tf td(off) tr td(on) Switching Time : t [ns] Fig. Switching Characteristics vs. Gate Resistance [ Tj=ºC ] V DS =V I D =8A V GS(on) =8V V GS(off) =V td(off) tf td(on) tr Gate Resistance : R G [ ] Gate Resistance : R G [ ] 3 ROHM Co., Ltd. All rights reserved. 7/ Rev.D

8 Fig.7 Switching Loss vs. Gate Resistance [ Tj=ºC ] 8 Fig.8 Switching Loss vs. Gate Resistance [ Tj=ºC ] 8 Switching Loss [mj] E on E off Switching Loss [mj] 4 V DS =V I D =8A V GS(on) =8V 4 V GS(off) =V E rr 8 E on E rr E off V DS =V I D =8A V GS(on) =8V V GS(off) =V Gate Resistance : R G [ ] Gate Resistance : R G [ ] Capasitance : C [nf] Fig.9 Typical Capacitance vs. Drain-Source Voltage.E-7.E-8.E-9.E- Tj=ºC V GS =V C rss C iss C oss Gate-Source Voltage : V GS Fig. Gate Charge Characteristics [ Tj=ºC ] I D =8A Tj=ºC.E-. Drain-Source Voltage : V DS Total Gate charge : Qg [nc] 3 ROHM Co., Ltd. All rights reserved. 8/ Rev.D

9 Normalized Transient Thermal Impedance : Rth Fig. Normalized Transient Thermal Impedance Single Pulse Tc=ºC Per unit base :.ºC/W.... Time [s] 3 ROHM Co., Ltd. All rights reserved. 9/ Rev.D

10 Notice Notes ) ) 3) 4) ) ) 7) 8) 9) ) ) ) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications. Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System

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