General Purpose Transistors

Transcription

1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount applications. Pb-Free Package is available. NPN PNP DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT AM SOT-33/SC- 3/Tape&Reel G AM (Pb-Free) SOT-33/SC- 3/Tape&Reel 3 A SOT-33/SC- 3/Tape&Reel G A (Pb-Free) SOT-33/SC- 3/Tape&Reel 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc 4 Collector Base Voltage V CBO 6 Vdc 4 Emitter Base Voltage V EBO 6. Vdc. Collector Current Continuous madc CASE 419, STYLE 3 SOT 33 / SC 1 BASE 3 COLLECTOR EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (1) P D 1 mw T A = C Thermal Resistance, Junction to Ambient R θja 833 C/W Junction and Storage Temperature, T stg to +1 C 1 BASE 3 COLLECTOR EMITTER LMBT394/6WT1-1/11

2 NPN PNP ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage () ( = 1. madc, I B = ) V (BR)CEO 4 Vdc ( = 1. madc, I B = ) 4 Collector Base Breakdown Voltage ( = µadc, I E = ) V (BR)CBO 6 Vdc ( = µadc, I E = ) 4 Emitter Base Breakdown Voltage (I E= µadc, = ) V (BR)EBO 6. Vdc (I E = µadc, = ). Base Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) I BL nadc (V CE = 3 Vdc, V EB = 3. Vdc) - Collector Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) EX nadc (V CE = 3 Vdc, V EB = 3. Vdc) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.. Pulse Test: Pulse Width <3 µs; Duty Cycle <.%. LMBT394/6WT1-/11

3 NPN PNP ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS () DC Current Gain h FE ( =.1 madc, V CE = 1. Vdc) 4 ( = 1. madc, V CE = 1. Vdc) ( = madc, V CE = 1. Vdc) 3 ( = madc, V CE = 1. Vdc) 6 ( = madc, V CE = 1. Vdc) 3 ( =.1 madc, V CE = 1. Vdc) 6 ( = 1. madc, V CE = 1. Vdc) 8 ( = madc, V CE = 1. Vdc) 3 ( = madc, V CE = 1. Vdc) 6 ( = madc, V CE = 1. Vdc) 3 Collector Emitter Saturation Voltage V CE(sat) Vdc ( = madc, I B = 1. madc). ( = madc, I B =. madc).3 ( = madc, I B = 1. madc). ( = madc, I B =. madc).4 Base Emitter Saturation Voltage V BE(sat) Vdc ( = madc, I B = 1. madc).6.8 ( = madc, I B =. madc).9 ( = madc, I B = 1. madc).6.8 ( = madc, I B =. madc).9 SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f T MHz ( = madc, V CE = Vdc, f = MHz) 3 ( = madc, V CE= Vdc, f = MHz) Output Capacitance C obo pf (V CB =. Vdc, I E =, f = 1. MHz) 4. (V CB=. Vdc, I E =, f = 1. MHz) 4. Input Capacitance C ibo pf (V EB =. Vdc, =, f = 1. MHz) 8. (V EB =. Vdc, =, f = 1. MHz). Input Impedance h ie kω (V CE= Vdc, = 1. madc, f = 1. khz) 1. (V CE= Vdc, = 1. madc, f = 1. khz). 1 Voltage Feedback Ratio h re X 4 (V CE= Vdc, = 1. madc, f = 1. khz). 8. (V CE= Vdc, = 1. madc, f = 1. khz).1 Small Signal Current Gain h fe (V CE= Vdc, = 1. madc, f = 1. khz) 4 (V CE= Vdc, = 1. madc, f = 1. khz) 4 Output Admittance h oe µmhos (V CE= Vdc, = 1. madc, f = 1. khz) 1. 4 (V CE= Vdc, = 1. madc, f = 1. khz) 3. 6 Noise Figure NF db (V CE=.Vdc, = µadc, R S=1. kω, f =1.kHz). (V CE=.Vdc, = µadc, R S=1. kω, f =1.kHz) 4. LMBT394/6WT1-3/11

4 NPN PNP SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc, V BE =. Vdc) t d 3 (V CC = 3. Vdc, V BE =. Vdc) 3 ns Rise Time ( = madc, I B1 = 1. madc) t r 3 ( = madc, I B1 = 1. madc) 3 ns Storage Time (V CC = 3. Vdc, = madc) t s (V CC = 3. Vdc, = madc) ns Fall Time (I B1 = I B = 1. madc) t f (I B1 = I B = 1. madc) ns. Pulse Test: Pulse Width <3 µs; Duty Cycle <.%. 3 ns DUTY CYCLE = %. V +.9 V <1 ns k +3 V < t 1 < µs DUTY CYCLE = % C S < 4. pf* 9.1 V t V k 1N V C S < 4. pf* <1. ns *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS = C = 1 C. 3 V CC = 4 V / I B = CAPACITANCE (pf). 3.. C ibo C obo Q, CHARGE (pc) 3 Q T Q A REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Charge Data LMBT394/6WT1-4/11

5 NPN PNP 3 = 3 V CC = 4 V = TIME (ns) 3 t CC =3.V 4 V t r, RISE TIME (ns) 3 1 V t OB =V. V Figure. Turn On Time Figure 6. Rise Time t s, STORAGE TIME (ns) 3 3 = = t s = t s 1/8t f I B1 =I B = = Figure. Storage Time t f, FALL TIME (ns) 3 3 = = Figure 8. Fall Time V CC =4V I B1 = I B TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = C, Bandwidth = 1. Hz) 1 SOURCE RESISTANCE= Ω = 1. ma 14 1 f = 1. khz = 1. ma NF, NOISE FIGURE (db) 8 SOURCE RESISTANCE= Ω =. ma 6 SOURCE RESISTANCE =1.kΩ = µa 4 SOURCE RESISTANCE= Ω = µa NF, NOISE FIGURE (db) =. ma = µa 8 = µa f, FREQUENCY (khz) Figure 9. Noise Figure R S, SOURCE RESISTANCE (kω) Figure. Noise Figure LMBT394/6WT1-/11

6 NPN PNP h PARAMETERS (V CE = Vdc, f = 1. khz, T A = C) h fe, CURRENT GAIN Figure 11. Current Gain h oe, OUTPUT ADMITTANCE ( µmhos) Figure 1. Output Admittance h ie, INPUT IMPEDANCE (k OHMS) h re, VOLTAGE FEEDBACK RATIO (X 4 ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio LMBT394/6WT1-6/11

7 NPN PNP TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) = +1 C V CE = 1. V + C. C Figure 1. DC Current Gain 1. = C.8 = 1. ma ma 3 ma ma I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region = C V = C TO +1 C V, VOLTAGE ( VOLTS ) V = V V CE =1. V COEFFICIENT (mv/ C) θ VC for V CE θ VB for V BE C TO + C C TO + C + C TO +1 C 1... C Figure 1. ON Voltages Figure 18. Temperature Coefficients LMBT394/6WT1-/11

8 NPN PNP 3 V +9.1 V < 1 ns 3 V +.6 V < 1 ns k 3 ns DUTY CYCLE = % C S < 4 pf* < t 1 < µs DUTY CYCLE = % t 1.9 V k 1N916 C S < 4 pf* * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit CAPACITANCE (pf) C obo C ibo REVERSE BIAS VOLTAGE (VOLTS) Figure 1. Capacitance TYPICAL TRANSIENT CHARACTERISTICS Q, CHARGE (pc) 3 3 V CC = 4 V = Figure. Charge Data Q T Q A = C = 1 C TIME (ns) 3 t V CC = 3. V = 1 V 3 4 V. V t V OB = V Figure 3. Turn On Time t f, FALL TIME (ns) 3 3 = = V CC = 4 V I B1 = I B Figure 4. Fall Time LMBT394/6WT1-8/11

9 NPN PNP TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = C, Bandwidth = 1. Hz) NF, NOISE FIGURE (db) SOURCE RESISTANCE= Ω = 1. ma SOURCE RESISTANCE= Ω =. ma SOURCE RESISTANCE =.kω = µa. 6 4 = µa SOURCE RESISTANCE=.kΩ 1. = µa = µa f, FREQUENCY (khz) Figure R S, SOURCE RESISTANCE (kω) Figure 6 h PARAMETERS NF, NOISE FIGURE (db) f = 1. khz (V CE = Vdc, f = 1. khz, T A = C) = 1. ma =. ma h fe, CURRENT GAIN Figure. Current Gain h oe, OUTPUT ADMITTANCE ( µmhos) Figure 8. Output Admittance h ie, INPUT IMPEDANCE (kω) h re, VOLTAGE FEEDBACK RATIO (X 4 ) Figure 9. Input Impedance Figure 3. Voltage Feedback Ratio LMBT394/6WT1-9/11

10 NPN PNP STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) = +1 C V CE = 1. V + C. C Figure 31. DC Current Gain 1. = C.8 =1. ma ma 3 ma ma I B, BASE CURRENT (ma) Figure 3. Collector Saturation Region V, VOLTAGE ( VOLTS ) 1. = C V = 1. V V CE =1. V V = 1... C Figure 33. ON Voltages θ V, TEMPERATURE COEFFICIENT (mv/ C) 1.. θ VC for V CE(sat) + C TO +1 C C TO + C. + C TO +1 C 1. θ VB for V BE(sat) C TO + C Figure 34. Temperature Coefficients LMBT394/6WT1-/11

11 NPN PNP SC- / SOT-33 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.M, CONTROLLING DIMENSION: INCH. S A L 3 1 G B C D N J DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H..4.. J.4... K.1 REF.4 REF L.6 BSC.6 BSC N.8 REF. REF S (.) H K inches mm LMBT394/6WT1-11/11