SiC Power Module BSM600D12P3G001. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.

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1 SiC Power Module BSM6D2P3G Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram ,4 Features ) Low surge, low switching loss. 6 5 NTC 2 2) High-speed switching possible. 3) Reduced temperature dependence. Consuction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 27 ROHM Co., Ltd. All rights reserved. / Rev.A

2 BSM6D2P3G Absolute maximum ratings (T j = 25 C) Parameter Symbol Conditions Limit Unit Drain-source voltage Gate-source voltage(+) Gate-source voltage( ) V DSS V GSS G-S short D-S short I D DC (T c =6 C) V GS =8V Drain current * I D DC (T c =5 C) V GS =8V I DRM I S DC (T c =6 C ) V GS =8V I S DC (T c =5 C ) V GS =8V Source current * I S DC (T c =6 C ) V GS =V I SRM I SRM Total power disspation * 3 Ptot T c =25 C 245 W Max Junction Temperature Junction temperature Storage temperature T jmax T jop T stg Pulse (T c =6 C) ms V GS =8V * 2 Pulse (Tc=6 C) ms V GS =8V * 2 Pulse (Tc=6 C) µs V GS =V * V A to5 C 4 to25 Isolation voltage Visol Terminals to baseplate, f=6hz AC min. 25 Vrms Mounting torque Main Terminals : M6 screw Mounting to heat shink : M5 screw N m (*) Case temperature (T c ) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T j is less than 75 C 27 ROHM Co., Ltd. All rights reserved. 2/ Rev.A

3 BSM6D2P3G Elecical characteristics (T j =25 C) Drain cutoff current V DS =2V, V GS =V Souce-Drain Voltage Parameter Static drain-source on-state voltage Gate-source threshold voltage Symbol Conditions Min. Typ. Max. Unit T j =25 C V DS(on) I C =6A, V GS =8V T j =25 C V T j =5 C I DSS ma T j =25 C V GS =V, I S =6A T j =25 C V V SD T j =5 C T j =25 C V GS =8V, I S =6A T j =25 C V T j =5 C V GS(th) V DS =V, I D =82mA V V GS =22V, V DS =V Gate-source leakage current I GSS V GS = 4V, V DS =V µa t d(on), V GS(off) = 2V * t r Switching characteristics t rr I D =6A ns t d(off) R G(on) =.8Ω, R G(off) =.8Ω t f inductive load Input capacitance Ciss V DS =V, V GS =V,2kHz nf Gate Registance R Gint T j =25 C Ω NTC Rated Resistance R kω NTC B Value B 5/ K Say Inductance Ls -. - nh Creepage Distance Clearance Distance Junction-to-case thermal resistance Case-to-heat sink Thermal resistance - - Terminal to heat sink mm Terminal to terminal mm Terminal to heat sink mm Terminal to terminal -. - mm UMOS (/2 module) * R th (j-c) SBD (/2 module) * Case to heat sink, per module, R th (c-f) - Thermal grease appied * 6-5 (*4) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*5) Measurement of Tc is to be done at the point just under the chip. <Wavelength for Switching Test> Eon=Id Vds Eoff=Id Vds (*6) Typical value is measured by using thermally conductive grease of λ=.9w/(m K). r (*7) SiC devices have lower short cuicuit withstand capability due Vds to high current density. Please be advised to pay careful 9% 9% attention to short cuicuit accident and y to adjust protection time to shutdown them as short as possible. % % % 2% 2% 2% 2% (*8) If the Product is used beyond absolute maximum Id ratings defined in the Specifications, as its internal 9% sucture may be dameged, please replace such Product V % Vgs with a new one. C/kW Vsurge 27 ROHM Co., Ltd. All rights reserved. 3/ Rev.A

4 BSM6D2P3G Fig. Typical Output Characteristics [ ] Fig.2 Drain-Source Voltage vs. Drain Current V GS =6V V GS =8V V GS =2V V GS =4V V GS =2V V GS =V Drain-Source Voltage : V DS V GS =8V T j =5ºC Drain-Source Voltage : V DS Drain-Source Voltage : V DS Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ ] I D =6A 2 I D =5A I D =4A I D =3A Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : R DS(on) [mω] I D =6A V GS =2V V GS =4V V GS =6V V GS =8V V GS =2V Gate-Source Voltage : V GS Junction Temperature : T j [ºC] 27 ROHM Co., Ltd. All rights reserved. 4/ Rev.A

5 BSM6D2P3G Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode T j =5ºC 2 Source Current : Is T j =5ºC V GS =V V GS =8V Source Current : Is T j =5ºC T j =5ºC V GS =V V GS =8V Source-Drain Voltage : V SD Source-Drain Voltage : V SD Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage 2.E V DS =2V T j =5ºC.E+2.E+.E+.E-.E-2 V DS =2V T j =5ºC 5 5.E Gate-Source Voltage : V GS Gate-Source Voltage : V GS 27 ROHM Co., Ltd. All rights reserved. 5/ Rev.A

6 BSM6D2P3G Fig.9 Switching Characteristics [ ] Fig. Switching Characteristics [ ] R G(on) =.8Ω R G(off) =.8Ω R G(on) =.8Ω R G(off) =.8Ω Fig. Switching Characteristics [ T j =5ºC ] R G(on) =.8Ω R G(off) =.8Ω Fig.2 Switching Loss vs. Drain Current [ ] R G(on) =.8Ω R G(off) =.8Ω E rr ROHM Co., Ltd. All rights reserved. 6/ Rev.A

7 BSM6D2P3G Fig.3 Switching Loss vs. Drain Current [ ] R G(on) =.8Ω R G(off) =.8Ω Fig.4 Switching Loss vs. Drain Current [ T j =5ºC ] R G(on) =.8Ω R G(off) =.8Ω E rr E rr Fig.5 Recovery Characteristics vs. Drain Current [ ] Fig.6 Recovery Characteristics vs. Drain Current [ ] Recovery Time : t rr [ns] R G =.8Ω r Irr Recovery Current : I rr Recovery Time : t rr [ns] R G =.8Ω r Irr Recovery Current : I rr ROHM Co., Ltd. All rights reserved. 7/ Rev.A

8 BSM6D2P3G Recovery Time : t rr [ns] Fig.7 Recovery Characteristics vs. Drain Current [ T j =5ºC ] I D =6A r Irr Recovery Current : I rr Fig.8 Switching Characteristics vs. Gate Resistance [ ] I D =6A Fig.9 Switching Characteristics vs. Gate Resistance [ ] I D =6A. Fig.2 Switching Characteristics vs. Gate Resistance [ T j =5ºC ] I D =6A. 27 ROHM Co., Ltd. All rights reserved. 8/ Rev.A

9 BSM6D2P3G Fig.2 Switching Loss vs. Gate Resistance [ ] I D =6A Fig.22 Switching Loss vs. Gate Resistance [ ] I D =6A E rr E rr.. Fig.23 Switching Loss vs. Gate Resistance [ T j =5ºC ] I D =6A E rr. Capasitance : C [F] Fig.24 Typical Capacitance vs. Drain-Source Voltage.E-7.E-8.E-9 V GS =V 2kHz C iss C oss C rss.e-.. Drain-Source Voltage : V DS 27 ROHM Co., Ltd. All rights reserved. 9/ Rev.A

10 BSM6D2P3G Gate-Source Voltage : V GS Fig.25 Gate Charge Characteristics I D =6A Total Gate charge : Qg [nc] Normalized Transient Thermal Impedance : Zth Fig.26 Normalized Transient Thermal Impedance. Single Pulse T c =25ºC Per unit base DMOS part : 6ºC/kW SBD part : 8ºC/kW..... Time [s] 27 ROHM Co., Ltd. All rights reserved. / Rev.A

11 Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illusate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : ansportation equipment (i.e. cars, ships, ains), primary communication equipment, affic lights, fire/crime prevention, safety equipment, medical systems, and power ansmission systems. Do not use our Products in applications requiring exemely high reliability, such as aerospace equipment, nuclear power conol systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other counies, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Adminisation Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 25 ROHM Co., Ltd. All rights reserved. R2S