Electronic Circuits. BJT Amplifiers. Manar Mohaisen Office: F208 Department of EECE
|
|
- Tamsin Jody Watts
- 5 years ago
- Views:
Transcription
1 Elctronic Circuits BJT mplifirs Manar Mohaisn Offic: F208 Dpartmnt of EECE
2 viw of th Prcdnt Lctur Explain th DC Oprating Point Explain th Voltag-dividr Bias Othr Bias Mthods Discussions
3 Class Objctivs Explain th mplifir Opration Explain th BJT C Modls Th Common-mittr mplifir Th common-bas amplifir Th common-collctor amplifir Multi-stag amplifirs
4 mplifir Opration Quantitis DC Quantitis Upprcas italic lttrs Upprcas subscripts I B, V C C Quantitis Upprcas italic lttrs Upprcas subscripts I b, V Instantanous Quantitis Upprcas italic lttrs Upprcas subscripts b i, v c sistancs C DC sistanc, c C rsistanc, r intrnal ac rsitanc.
5 mplifir Opration contd. Th Linar mplifir Coupling capacitors block th DC quantitis. Prvnts th chang of th DC bias voltags at th bas and collctor. Collctor voltag is invrsly proportional to I c. It has a 180 phas diffrnc with I c.
6 mplifir Opration contd. Graphical prsntation C load lin. Diffrnc bt. DC and C load lin will b rvisitd in Chaptr 7.
7 mplifir Opration contd. Exampl 6.1
8 Transistor C Modls contd. r Param. r Paramtrs α ac β ac Dscription ac alpha ac bta r ac mittr rsistanc r b ac bas rsistanc r c ac collctor rsistanc r b (small) can b nglctd (short) r c (high) can b nglctd (opn)
9 Transistor C Modls contd. Dtrmining r by a Formula r 25 mv I E Not that Emittr currnt changs with tmpratur. lso, in th drivation, it was considrd that thr is an abrupt junction btwn th n and p rgions. Howvr, this approximation is valid for analysis.
10 Transistor C Modls contd. Comparison btwn th C Bta and th DC Bta
11 Transistor C Modls contd. h (hybrid) Paramtrs Supplid by th manufacturr. H Paramtr Dscription Condition h i Input impdanc (rsistanc) Output shortd h r Voltag fdback ratio Input opn h f Forward currnt gain Output shortd h o Output admittanc (conductanc) Input opn Configuration Dscription Common-mittr h i, h r, h f, h o Common-bas h ib, h rb, h fb, h ob Common-collctor h ic, h rc, h fc, h oc α h ac β r ac h h fb hf r o r 1 c h + ho r r h r i h (1 + h ) b h f o
12 Th Common-mittr mplifir mplifir DC nalysis & C nalysis Common-mittr rfrs to th C opration.
13 DC nalysis Q-point > 10 2, so it is nglctd. Th Common-mittr mplifir contd. β (150)(560 Ω ) 84 kω IN(BSE) DC E V B 12V 2.83 V k V Ω CC kΩ I E V V V 2.83V 0.7V 3.80m E B BE E E 560Ω V V I 8.2V C CC C C V V V 6.07V CE C E
14 C nalysis C1, C2, and C3 ar rplacd by shorts. Th Common-mittr mplifir contd. Thir valus ar slctd so that thir impdancs ar ngligibl. Th DC sourc is rplacd with ground.
15 Th Common-mittr mplifir contd. C nalysis Th ac input rsistanc is sn in paralll with 1 & 2. in( tot) 1 2 in( bas) V b in( tot) in( tot) + s V s
16 Input sistanc looking in at th Bas Th Common-mittr mplifir contd. in( bas) V in Iin Ir b b β I / β ac V I ac r Output sistanc looking in at th collctor out r C c C
17 Exampl 6-3 Find V b. I E 3.8 m. Th Common-mittr mplifir contd. r 25 mv 25 mv 6.58 Ω I 3.8m E β 160(6.58 ) 1.05k in( bas) ac r Ω Ω 873 Ω in( tot) 1 2 in( bas) V b mV(rms) 7.44 mv(rms) in( tot) Vs s in( tot)
18 C Voltag Gain atio btwn Output Voltag and Input Voltag. Th Common-mittr mplifir contd. V I I c c C C C v V b Ir Ir r If you would lik to gt th ovrall amplifir voltag gain v V V V V V c b Vc in( tot) s s b + in( tot) s v
19 Th Common-mittr mplifir contd. Effct of th Emittr Bypass Capacitor On Voltag Gain To obtain a short circuit by th capacitor C2 X C 2 10 E Exampl 6-4 Opration frquncy rang: 200 Hz ~ 10 khz X 56 C 2 10 E Ω C μf π fx 2 C 2
20 Voltag Gain without th Bypass Capacitor Th Common-mittr mplifir contd. v r C + E Exampl 6-5 r 6.58 Ω Gain without Bypass Capacitor v 1000 C r E 1.76 Gain with Bypass Capacitor v r 6.58 C
21 Effct of Load on th Voltag Gain In prsnc of a load Th load is connctd in Paralll with C. Thrfor, Th Common-mittr mplifir contd. v r c C L r
22 Effct of Load on th Voltag Gain contd. Exampl 6-6 L 5 kω, r 6.58 Ω, C 1 k Ω In Prsnc of Load Without Load Th Common-mittr mplifir contd. v 833 Ω c C L r r 6.58 Ω v c C Ω 152 r r 6.58 Ω
23 Stability of th Voltag Gain Th Common-mittr mplifir contd. Stability is a masur of how wll an amplifir maintains its dsign valus for a chang in tmpratur and β. Swamping r duc its ffct. v r E 1 c + E 1 c, for > 10 r E 1 Both E1 and E2 affct th DC bias Only E1 affcts th C voltag gain.
24 Th Common-mittr mplifir contd. Th Effct of Swamping on th mplifir s Input sistanc β r ( ) ( ) ac + in bas E1
25 Currnt Gain Currnt gain from bas to collctor Th ovrall currnt Gain Th Common-mittr mplifir contd. β ac I I c b i I I c s with I s s Vs + in( tot) Powr Gain p v i with c v Vs V
26 Th Common-mittr mplifir contd. Exampl 6-8 DC analysis C analysis
27 Exampl 6-8 contd. DC nalysis > 10 2, so th amplifir is stiff. Th Common-mittr mplifir contd. β + Ω Ω ( ) 150(940 ) 141 k IN(BSE) DC E1 E2 V B 2 V CC V V V V V E B BE I E V 1.05 V 1.12 m E + E1 E2 940Ω V V I 10V (1.12m)(4.7k Ω ) 4.74V C CC C C V V V V CE C E
28 Exampl 6-8 contd. C nalysis Th Common-mittr mplifir contd. r 25 mv 25 mv 22 Ω I 1.12m E in( bas) Ω Ω β ac ( r + ) 175(492 ) 86.1k E k Ω in( tot) 1 2 in( bas) ( ) attnuation V s + s in tot c 4.27kΩ V 7530 C L v c c 9.09 r + E1 b E1 in( tot) V b 1 v v V 1.08 s V V (8.45)(10mV) 84.5 mv c v s
29 Exampl 6-8 contd. DC & C nalysis Th Common-mittr mplifir contd. Max V V V (84.5 mv)(1.414) 4.86 V cp ( ) cp ( ) C Min V V V 4.74 (84.5 mv)(1.414) 4.62 V C c c V V V 119 mv out( p) c( p) C
30 Th Common-collctor mplifir Emittr-followr mplifir Common-collctor amplifir
31 Voltag Gain Th Common-collctor mplifir contd. v V I V I r out ( in + ) 1 ( r + ) Not Sinc th output follows th input in both phas and amplitud, Th amplifir is rfrrd to as mittr-followr.
32 Input sistanc Th Common-collctor mplifir contd. in( bas) V V I r in b ( + ) Iin I I b b β ( aci r + ) b β ( ac r + ) Ib Thrfor, in( tot) 1 2 in( bas) Output sistanc Without load. out β s ac E
33 Currnt Gain Th Common-collctor mplifir contd. I I i I V / in in in( tot) Powr Gain p v i i
34 Th Darlington Pair Th Common-collctor mplifir contd. I β I 1 ac1 b1 I β I β β I 2 ac2 b2 ac1 ac2 b1 Ovrall currnt gain β β β ac1 ac2 β β in ac1 ac2 E
35 n pplication Th Common-collctor mplifir contd. Emittr-followr is usd as intrfac bt. circuit with high output rsistanc and low-rsistanc load. Exampl Considr a common-mittr amplifir with C 1 kω, L 8 Ω Th loss in th voltag gain du to th load is high. W.o. load v C r 5 w. load c C L 7.94 v 1.59 r r 5 Th solution is by using th Darlington pair.
36 n pplication Intrfac th amplifir and th spakr. Th Common-collctor mplifir contd.
37 Exampl 6-10 Common-mittr: Th Common-collctor mplifir contd. r 5, VCC 12 V, C 1 k Darlington mittr-followr: 1 10 kω, 2 22 kω, E 22Ω, L 8Ω, V CC 12V, β ac β DC 100. V B β 20 12V 8.0V 2 2 DC E V β 2 CC DC E I E V V 2V 6.6V 300 m E B BE E E 22Ω r 25mV 25mV 83m Ω I 300m E
38 Th Common-collctor mplifir contd. Exampl 6-10 contd. Th load of th CE amplifir is in(tot) of th EF. in( tot) 1 2 in( bas) β 2 ( ) 1 2 ac r k Ω 22k Ω 100 (83mΩ Ω ) 860Ω Th voltag gain of th common-mittr amplifir r 5 Th voltag gain of th Darlington EF 5.87 v 0.99 r + 83 mω Th ovrall voltag gain v (0.99)(172) 170 v(ef) v(ce) v c
39 Th Common-collctor mplifir contd. Th Sziklai Pair
40 Th Common-bas mplifir Voltag Gain Notic that thr is no phas invrsion bt. output and input. v V I V I r r out c c c ( ) ( in ) E E
41 Th Common-bas mplifir contd. Input sistanc Th rsistanc, looking in at th mittr ( in V I r ) E V r in( mittr) I I I Output sistanc Th rsistanc, looking in at th collctor in ( ) E Currnt Gain r out c C C I out Ic i 1 I I in
42 Multistag mplifirs Multistag Voltag Gain L v v1 v2 v3 vn
43 Multistag mplifirs contd. Capacitivly-coupld Multistag mplifir 1.63k Ω c in( bas2) I r 25mV Ω r Ω 1.05m, E 23.8, and β 3.57k in( bas2) ac1 IE
44 Multistag mplifirs contd. Capacitivly-coupld Multistag mplifir 68.5 c1 v1 r 4.7kΩ Ω 7 v2 r Th ovrall Voltag Gain (68.5)(197) 13, v v v
45 Multistag mplifirs contd. Dirct-coupld Multistag mplifir dvantags No coupling capacitors Can amplify low frquncis Down to dc (0 Hz). Disadvantag ffctd by th changs du to tmpratur.
46 Class Summary Explaind th mplifir Opration Explaind th BJT C Modls Introducd th Common-mittr mplifir Introducd th common-bas amplifir Introducd th common-collctor amplifir Discussd th opration of multi-stag amplifirs
47 Discussion & Nots K K K K K K K K K K K K
KTC4080 SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES. MAXIMUM RATING (Ta=25 )
SMICONDUCTOR TCHNICAL DATA KTC48 PITAXIAL PLANAR NPN TRANSISTOR HIGH FRQUNCY LOW NOIS AMPLIFIR APPLICATION. VHF BAND AMPLIFIR APPLICATION. FATURS Small Reverse Transr Capacitance : C =.7pF(Tp.) Low Noise
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor
More informationDesign Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance
TECHNICAL NTE 30 Dsign Guidlins for Quartz Crystal scillators Introduction A CMS Pirc oscillator circuit is wll known and is widly usd for its xcllnt frquncy stability and th wid rang of frquncis ovr which
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationCh. 9 Common Emitter Amplifier
Ch. 9 Common mttr mplfr Common mttr mplfr nput and put oltags ar 180 o -of-phas, whl th nput and put currnts ar n-phas wth th nput oltag. Output oltag ( V ) V V V C CC C C C C and V C ar -of-phas 10 μ
More informationECE 2210 / 00 Phasor Examples
EE 0 / 00 Phasor Exampls. Add th sinusoidal voltags v ( t ) 4.5. cos( t 30. and v ( t ) 3.. cos( t 5. v ( t) using phasor notation, draw a phasor diagram of th thr phasors, thn convrt back to tim domain
More informationIVE(TY) Department of Engineering E&T2520 Electrical Machines 1 Miscellaneous Exercises
TRANSFORMER Q1 IE(TY) Dpartmnt of Enginring E&T50 Elctrical Machins 1 Miscllanous Exrciss Q Q3 A singl phas, 5 ka, 0/440, 60 Hz transformr gav th following tst rsults. Opn circuit tst (440 sid opn): 0
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationVoltage, Current, Power, Series Resistance, Parallel Resistance, and Diodes
Lctur 1. oltag, Currnt, Powr, Sris sistanc, Paralll sistanc, and Diods Whn you start to dal with lctronics thr ar thr main concpts to start with: Nam Symbol Unit oltag volt Currnt ampr Powr W watt oltag
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationEngineering 1620: High Frequency Effects in BJT Circuits an Introduction Especially for the Friday before Spring Break
nginring 162: High Frquncy ffcts in BJT Circuits an Inoduction spcially for th Friday bfor Spring Brak I hav prpard ths nots bcaus on th day bfor a major vacation brak som popl find it ncssary to lav arly
More informationTRANSISTOR AND DIODE STUDIES. Prof. H. J. Zimmermann Prof. S. J. Mason C. R. Hurtig Prof. R. B. Adler Dr. W. D. Jackson R. E.
XI. TANSISTO AND DIODE STUDIES Prof. H. J. Zimmrmann Prof. S. J. Mason C.. Hurti Prof.. B. Adlr Dr. W. D. Jackson. E. Nlson A. DESIGN OF TANSFOMEESS TANSISTO AUDIO AMPIFIES Considrabl ffort by many oranizations
More informationESE319 Introduction to Microelectronics Common Emitter BJT Amplifier
Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -
More informationClassical Magnetic Dipole
Lctur 18 1 Classical Magntic Dipol In gnral, a particl of mass m and charg q (not ncssarily a point charg), w hav q g L m whr g is calld th gyromagntic ratio, which accounts for th ffcts of non-point charg
More informationA crash-course in transistor circuits
A crash-cours in transistor circuits Patrick R. LClair July 19, 2011 Contnts 1 Transistors 1 1.1 Basic charactristics.................................... 1 1.2 Notation...........................................
More informationECE 344 Microwave Fundamentals
ECE 44 Microwav Fundamntals Lctur 08: Powr Dividrs and Couplrs Part Prpard By Dr. hrif Hkal 4/0/08 Microwav Dvics 4/0/08 Microwav Dvics 4/0/08 Powr Dividrs and Couplrs Powr dividrs, combinrs and dirctional
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationα I I R α N I F I F i C i E R Cx R Ex C Cx i B R Bx
Bipolar transistor, continud - 1 - Ebrs-Moll modl α I I R α N I F E i E i C C R Ex I F I R R Cx C Cx i B R Bx B E B C Figur 1: Dashd lin indicats th "intrinsic" portion of th dvic, xcluding "parasitic"
More informationES 330 Electronics II Homework # 9 (Fall 2017 Due Monday, December 4, 2017)
Pag1 Na OLUTON E 330 Elctronics Howork # 9 (Fall 017 Du Monday, Dcbr 4, 017) Probl 1 (14 points) Dsign a MO diffrntial aplifir illsuratd in th schatic blow to oprat at O = 0.5 olt with a transconductanc
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationExperiment #9 BJT Dynamic Circuits
Exprimnt #9 BJT Dynamic Circuits Jonathan Rodrick Hakan Durmus Scott Kilpatrick Burgss Introduction: In th last la, w larnd th point of iasing an analog circuit corrctly is so th activ dvics within th
More informationDUAL P-CHANNEL MATCHED MOSFET PAIR
DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod
More informationSmall-Signal Midfrequency BJT Amplifiers
Small-Signal Midfrequency JT Amplifiers 6.. INTRODUTION For sufficiently small emitter-collector voltage and current excursions about the quiescent point (small signals), the JT is considered linear; it
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationIXBT22N300HV IXBH22N300HV
High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller
More informationImpedance Transformation and Parameter Relations
8/1/18 Cours nstructor Dr. Raymond C. Rumpf Offic: A 337 Phon: (915) 747 6958 E Mail: rcrumpf@utp.du EE 4347 Applid Elctromagntics Topic 4 mpdanc Transformation and Paramtr Rlations mpdanc Ths Transformation
More informationSP490/SP491. Full Duplex RS-485 Transceivers. Now Available in Lead Free Packaging
SP490/SP491 Full uplx RS-485 Transcivrs FTURS +5V Only Low Powr icmos rivr/rcivr nal (SP491) RS-485 and RS-422 rivrs/rcivrs Pin Compatil with LTC490 and SN75179 (SP490) Pin Compatil with LTC491 and SN75180
More informationIFB270 Advanced Electronic Circuits
IFB270 Advanced Electronic Circuits Chapter 0: Ampliier requency response Pro. Manar Mohaisen Department o EEC Engineering Review o the Precedent Lecture Reviewed o the JFET and MOSFET Explained and analyzed
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes
More informationREFLECTIVE OBJECT SENSOR
QR4 PACKAG DIMNSIONS + + D.6 (6.) D + +.49 (.5). (8.4).97 (5.) 4.4 (8.) SCHMATIC.8 (.).8 (.46) SQ. (4X) 4. (.54).6 (9.) NOTS:. Dimensions for all drawings are in inches.. Tolerance of ±. on all non-nominal
More informationDefinition1: The ratio of the radiation intensity in a given direction from the antenna to the radiation intensity averaged over all directions.
Dirctivity or Dirctiv Gain. 1 Dfinition1: Dirctivity Th ratio of th radiation intnsity in a givn dirction from th antnna to th radiation intnsity avragd ovr all dirctions. Dfinition2: Th avg U is obtaind
More informationExam 1. It is important that you clearly show your work and mark the final answer clearly, closed book, closed notes, no calculator.
Exam N a m : _ S O L U T I O N P U I D : I n s t r u c t i o n s : It is important that you clarly show your work and mark th final answr clarly, closd book, closd nots, no calculator. T i m : h o u r
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationThe Common-Emitter Amplifier
c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram
More informationStatus of LAr TPC R&D (2) 2014/Dec./23 Neutrino frontier workshop 2014 Ryosuke Sasaki (Iwate U.)
Status of LAr TPC R&D (2) 214/Dc./23 Nutrino frontir workshop 214 Ryosuk Sasaki (Iwat U.) Tabl of Contnts Dvlopmnt of gnrating lctric fild in LAr TPC Introduction - Gnrating strong lctric fild is on of
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationChapter 2 - DC Biasing - BJTs
Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationSinusoidal Response Notes
ECE 30 Sinusoidal Rspons Nots For BIBO Systms AStolp /29/3 Th sinusoidal rspons of a systm is th output whn th input is a sinusoidal (which starts at tim 0) Systm Sinusoidal Rspons stp input H( s) output
More informationIXTT3N200P3HV IXTH3N200P3HV
Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous
More informationExtraction of Doping Density Distributions from C-V Curves
Extraction of Doping Dnsity Distributions from C-V Curvs Hartmut F.-W. Sadrozinski SCIPP, Univ. California Santa Cruz, Santa Cruz, CA 9564 USA 1. Connction btwn C, N, V Start with Poisson quation d V =
More informationMEASURING HEAT FLUX FROM A COMPONENT ON A PCB
MEASURING HEAT FLUX FROM A COMPONENT ON A PCB INTRODUCTION Elctronic circuit boards consist of componnts which gnrats substantial amounts of hat during thir opration. A clar knowldg of th lvl of hat dissipation
More informationSensors and Actuators Introduction to sensors
Snsrs and Actuatrs Intrductin t snsrs Sandr Stuijk (s.stuijk@tu.nl) Dpartmnt f Elctrical Enginring Elctrnic Systms APAITIVE IUITS (haptr., 7., 9., 0.6,.,.) apaciti snsr capacitanc dpnds n physical prprtis
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationSAFE HANDS & IIT-ian's PACE EDT-15 (JEE) SOLUTIONS
It is not possibl to find flu through biggr loop dirctly So w will find cofficint of mutual inductanc btwn two loops and thn find th flu through biggr loop Also rmmbr M = M ( ) ( ) EDT- (JEE) SOLUTIONS
More informationGeneral Notes About 2007 AP Physics Scoring Guidelines
AP PHYSICS C: ELECTRICITY AND MAGNETISM 2007 SCORING GUIDELINES Gnral Nots About 2007 AP Physics Scoring Guidlins 1. Th solutions contain th most common mthod of solving th fr-rspons qustions and th allocation
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 The D bias point is affected by thermal issue due to the active device parameter variations with temperature I 1 I I 0 I [ma] V R } I 5 } I 4 } I 3 Q 2 } I 2 Q 1 } I
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationSynchronous machines
Synchronous gnrator (altrnator): transorms mchanical nrgy into lctric nrgy; dsignd to gnrat sinusoidal oltags and currnts; usd in most powr plants, or car altrnators, tc. Synchronous motor: transorms lctric
More informationLast time. Resistors. Circuits. Question. Quick Quiz. Quick Quiz. ( V c. Which bulb is brighter? A. A B. B. C. Both the same
Last tim Bgin circuits Rsistors Circuits Today Rsistor circuits Start rsistor-capacitor circuits Physical layout Schmatic layout Tu. Oct. 13, 2009 Physics 208 Lctur 12 1 Tu. Oct. 13, 2009 Physics 208 Lctur
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationTitle: Vibrational structure of electronic transition
Titl: Vibrational structur of lctronic transition Pag- Th band spctrum sn in th Ultra-Violt (UV) and visibl (VIS) rgions of th lctromagntic spctrum can not intrprtd as vibrational and rotational spctrum
More informationL4970A 10A SWITCHING REGULATOR
L4970A 10A SWITCHING REGULATOR 10A OUTPUT CURRENT.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90 DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA- TION INTERNAL CURRENT LIMITING PRECISE.1 ± 2 ON CHIP REFERENCE
More informationIn this lecture... Subsonic and supersonic nozzles Working of these nozzles Performance parameters for nozzles
Lct-30 Lct-30 In this lctur... Subsonic and suprsonic nozzls Working of ths nozzls rformanc paramtrs for nozzls rof. Bhaskar Roy, rof. A M radp, Dpartmnt of Arospac, II Bombay Lct-30 Variation of fluid
More information2F1120 Spektrala transformer för Media Solutions to Steiglitz, Chapter 1
F110 Spktrala transformr för Mdia Solutions to Stiglitz, Chaptr 1 Prfac This documnt contains solutions to slctd problms from Kn Stiglitz s book: A Digital Signal Procssing Primr publishd by Addison-Wsly.
More informationPhiladelphia University Faculty of Engineering Communication and Electronics Engineering
Module: Electronics II Module Number: 6503 Philadelphia University Faculty o Engineering Communication and Electronics Engineering Ampliier Circuits-II BJT and FET Frequency Response Characteristics: -
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationData Assimilation 1. Alan O Neill National Centre for Earth Observation UK
Data Assimilation 1 Alan O Nill National Cntr for Earth Obsrvation UK Plan Motivation & basic idas Univariat (scalar) data assimilation Multivariat (vctor) data assimilation 3d-Variational Mthod (& optimal
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59
Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationChapter 2. - DC Biasing - BJTs
Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationc Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Feedback Amplifiers CollectionofSolvedProblems A collection of solved
More informationChapter 3: Capacitors, Inductors, and Complex Impedance
haptr 3: apacitors, Inductors, and omplx Impdanc In this chaptr w introduc th concpt of complx rsistanc, or impdanc, by studying two ractiv circuit lmnts, th capacitor and th inductor. W will study capacitors
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationUniversity of Illinois at Chicago Department of Physics. Thermodynamics & Statistical Mechanics Qualifying Examination
Univrsity of Illinois at Chicago Dpartmnt of hysics hrmodynamics & tatistical Mchanics Qualifying Eamination January 9, 009 9.00 am 1:00 pm Full crdit can b achivd from compltly corrct answrs to 4 qustions.
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. Common-Emitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o --->, r oc --->, R L ---> Find V BIAS such that I C
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationSER/BER in a Fading Channel
SER/BER in a Fading Channl Major points for a fading channl: * SNR is a R.V. or R.P. * SER(BER) dpnds on th SNR conditional SER(BER). * Two prformanc masurs: outag probability and avrag SER(BER). * Ovrall,
More informationMICROELECTRONIC CIRCUIT DESIGN Second Edition
MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113
More informationLecture Outline. Skin Depth Power Flow 8/7/2018. EE 4347 Applied Electromagnetics. Topic 3e
8/7/018 Cours Instructor Dr. Raymond C. Rumpf Offic: A 337 Phon: (915) 747 6958 E Mail: rcrumpf@utp.du EE 4347 Applid Elctromagntics Topic 3 Skin Dpth & Powr Flow Skin Dpth Ths & Powr nots Flow may contain
More informationElectronics II. Midterm #1
The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem
More informationElectronics II. Midterm II
The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)
More informationECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution
ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationY 0. Standing Wave Interference between the incident & reflected waves Standing wave. A string with one end fixed on a wall
Staning Wav Intrfrnc btwn th incint & rflct wavs Staning wav A string with on n fix on a wall Incint: y, t) Y cos( t ) 1( Y 1 ( ) Y (St th incint wav s phas to b, i.., Y + ral & positiv.) Rflct: y, t)
More informationG D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from
More informationSinusoidal Response of RLC Circuits
Sinusoidal Response of RLC Circuits Series RL circuit Series RC circuit Series RLC circuit Parallel RL circuit Parallel RC circuit R-L Series Circuit R-L Series Circuit R-L Series Circuit Instantaneous
More informationorbiting electron turns out to be wrong even though it Unfortunately, the classical visualization of the
Lctur 22-1 Byond Bohr Modl Unfortunatly, th classical visualization of th orbiting lctron turns out to b wrong vn though it still givs us a simpl way to think of th atom. Quantum Mchanics is ndd to truly
More informationG D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from
More information2/12/2013. Overview. 12-Power Transmission Text: Conservation of Complex Power. Introduction. Power Transmission-Short Line
//03 Ovrviw -owr Transmission Txt: 4.6-4.0 ECEGR 45 owr ystms Consrvation of Complx owr hort in owr Transmission owr Transmission isualization Radial in Mdium and ong in owr Transmission oltag Collaps
More informationFET Small-Signal Analysis
CHAPTER FET mall-ignal Analysis 9 9.1 INTROUCTION Field-effect transistor amplifiers provide an excellent voltage gain with the added feature of a high input impedance. They are also considered low-power
More informationThe pn junction: 2 Current vs Voltage (IV) characteristics
Th pn junction: Currnt vs Voltag (V) charactristics Considr a pn junction in quilibrium with no applid xtrnal voltag: o th V E F E F V p-typ Dpltion rgion n-typ Elctron movmnt across th junction: 1. n
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationForces. Quantum ElectroDynamics. α = = We have now:
W hav now: Forcs Considrd th gnral proprtis of forcs mdiatd by xchang (Yukawa potntial); Examind consrvation laws which ar obyd by (som) forcs. W will nxt look at thr forcs in mor dtail: Elctromagntic
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationISSN Article. Analysis of the Coupling Behavior of PEM Fuel Cells and DC-DC Converters
Enrgis 29, 2, 71-96; doi:1.339/n2171 OPEN ACCESS nrgis ISSN 1996-173 www.mdpi.com/journal/nrgis Articl Analysis of th Coupling Bhavior of PEM Ful Clls and DC-DC Convrtrs Markus Grötsch 1,, Michal Mangold
More information