KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

Size: px
Start display at page:

Download "KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )"

Transcription

1 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory, Robert L. Boylestad, Louis Nashelsky, 11 th ed, 2013

2 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Current Sources The concept of a power supply provides the starting point in our consideration of current source circuits. A practical voltage source is a voltage supply in series with a resistance. An ideal voltage source has R = 0, whereas a practical source includes some small resistance. A practical current source is a current supply in parallel with a resistance. An ideal current source has R =, whereas a practical current source includes some very large resistance.

3 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 3 An ideal current source provides a constant current regardless of the load connected to it. There are many uses in electronics for a circuit providing a constant current at a very high impedance. R 1 I 1 I B I C I 2 V - BE I 1 = I 2 I B I 2 - I E V EE R 2 V EE value is > 0 R E V CE V EE I 1 I 2 = R 1 R 2 I 2 R 2 = V BE I E R E I E = I 2R 2 V BE I C = I E R E β β 1 I E

4 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Switching of the Transistors The application of transistors is not limited solely to the amplification of signals. Through proper design, transistors can be used as switches for computer and control applications. The network of next example can be employed as an inverter in computer logic circuitry Example 4.18 V C? V CC = 5V = 68 k = 0.82 k β=125 V BE = 0.7 V - V CB I B V BE I C - - I E V CC V CE V C Proper design for the inversion process requires that the operating point switch from cutoff to saturation along the load line. For our purposes we will assume that I C = I CEO 0 ma when I B = 0 μa. In addition, we will assume that V CE = V CEsat 0 V rather than the typical 0.1 V to 0.3 V level. Transistor switches between I C = 0 ma, V CE = 5 V and I C = I Csat, V CEsat = 0 V

5 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 5 When = 5 V : 5 I Csat = = ma 0.82 x 103 If I Csat < βi B or I B > I Csat β then the transistor is in the saturation region When = 5 V, the transistor will be on and the design must ensure that the network is heavily saturated by a level of I B greater than that associated with the I B curve appearing near the saturation level. I B = x 103 = 63 μa > 68 x V CE 0 V V C 0 V μa When = 0 V : I B = 0 μa I C = 0 ma V CE 5 V V C 5 V

6 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 6 5 BJT AC ANALYSIS Most of the content is from the textbook: Electronic devices and circuit theory, Robert L. Boylestad, Louis Nashelsky, 11 th ed, 2013

7 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Introduction We will examine the ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal AC domain. One of our first concerns in the sinusoidal ac analysis of transistor networks is the magnitude of the input signal. It will determine whether small-signal or large-signal techniques should be applied. There is no set dividing line between the two, but the application and the magnitude of the variables of interest relative to the scales of the device characteristics will usually make it quite clear which method is appropriate. The small-signal technique is considered right now. There are three models commonly used in the small-signal ac analysis of transistor networks: 1. the model, 2. the hybrid π model, 3. and the hybrid equivalent model. We will emphasize the model.

8 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Amplification in the AC Domain i ac pp i c pp due to current amplification The peak value of the oscillation in the output circuit is controlled by the established DC level. In general, therefore, proper amplification design requires that the DC and AC components be sensitive to each other s requirements and limitations. However, it is extremely helpful to realize that: The superposition theorem is applicable for the analysis and design of the DC and AC components of a BJT network, permitting the separation of the analysis of the DC and AC responses of the system. We can make a complete dc analysis of a system before considering the AC response. Once the DC analysis is complete, the AC response can be determined using a completely AC analysis. It happens, however, that one of the components appearing in the AC analysis of BJT networks will be determined by the DC conditions, so there is still an important link between the two types of analysis.

9 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept BJT Transistor Modeling A model is a combination of circuit elements, properly chosen, that best approximates the actual behavior of a semiconductor device under specific operating conditions. Once the ac equivalent circuit is determined, the schematic symbol for the device can be replaced by this equivalent circuit and the basic methods of circuit analysis applied to determine the desired quantities of the network. Let us assume for the moment that the small-signal ac equivalent circuit for the transistor has already been determined. Because we are interested only in the AC response of the circuit, all the DC supplies can be replaced by a zero-potential equivalent (short circuit) because they determine only the DC (quiescent level) of the output voltage and not the magnitude of the swing of the AC output. V CC R 1 C 2 R s C 1 V s R 2 R E C 3

10 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 10 V CC zero-potential equivalent of the network C 2 R 1 R 1 R s C 1 R s V s R 2 R E C 3 V s R 2 R E All DC supplies can be replaced by a zero potential equivalent Use short circuits for DC voltage sources Use open circuits for DC current sources Coupling capacitors C 1 and C 2, by-pass capacitor C 3 chosen to have very small reactance at the frequency of application. Therefore they can be replaced by short circuits in many applications.

11 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 11 R i R o : output current : input current : input impedance (impedance when looking into the system.) : output impedance (impedance when looking back to the system.) Small signal modeling: very common analysis technique which is used to approximate behavior of non-linear devices with lineaquations. A V = : Voltage gain of the system A i = : Current gain of the system

12 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 12 zero-potential equivalent of the network zero-pot. eq. of the network (re-drawn) R 1 R s R s * R 2 R 1 R 2 V s R E V s * Now, we can insert small signal AC model of BJT AC equivalent of the network can be found after: 1. All DC supplies can be replaced by a zero potential equivalent. short circuits for DC voltage sources open circuits for DC current sources 2. Replace all capacitors with short circuits. 3. Remove bypassed components. 4. Redraw the network in a more convenient form.

13 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept model BJT equivalent circuit. I c βi b Diode can be replaced with resistor = = V be I b I b V be = I e = I c I b = β 1 I b = β 1 = 26mV/I E, I b V be I e V ce b I b I E : emitter current we obtained from DC analysis r o = V CE I C (given in the data sheet) I c c βi b r o model of CE e

14 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 14 The equivalent circuit of will be used throughout the analysis to follow for the common-emitter configuration. Typical values of β run from 50 to 200, with values of typically running from a few hundred ohms to a maximum of 6 k to 7 k. The output resistance is typically in the range of 40 k to 50 k. = 26mV/I E = I E : emitter current we obtained from DC analysi z o I e I c e I e I c c r o model of CB αi e b This is a pnp transistor! The direction of the collector current in the output circuit is now opposite to that of the defined output current. Because the output current is opposite to the defined direction, you will find in the analysis to follow that there is no phase shift between the input and output voltages. For the common-emitter configuration there is a 180 phase shift.

15 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Fixed Bias Configuration (CE) Note that the input signal is applied to the base of the transistor, whereas the output is off the collector. In addition, recognize that the input current is not the base current, but the source current, and the output current is the collector current. The small-signal AC analysis begins by removing the DC effects of V CC and replacing the DC blocking capacitors C 1 and C 2 by short-circuit equivalents V CC zero-potential equivalent of the network C 2 C 1 I b I c r o small-signal AC equivalent of the network using model - βi b

16 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 16 = ( ) = r o is determined when = 0 Mostly r o is greater than more than a factor of 10. = βi b (r o ) r o - I b = = β (r o = (r o A v = = (r o ) If r o 10 V CC A v is negative there is a 180 phase shift between and Example 5.1 C 2 a) Determine b) Calculate c) Calculate and A v for r o = d) Calculate and A v for r o = 50 k C 1 V CC = 12 V = 470 k = 3 k C 1 = 10 μf C 2 = 10 μf β=100 V BE = 0.7 V

17 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 17 a) Regarding DC conditions ; I B = μa I E = ma 26 mv = = I E b) = = k c) = (r o ) ( 3 k ) = 3k A v = = (r o ) = 3x = d) = r o (50k 3 k ) = 2.83k A v = = (r o ) = 2.83x =

18 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Voltage Divider Configuration (CE) V CC R 1 C 2 small-signal AC equivalent of the network using model I b I c I C 1 i R 1 R 2 βi b r o R 2 R E C 3 - = R 1 R 2 ( ) = r o Mostly r o is greater than more than a factor of 10. = βi b (r o ) I b = = β (r βr o ) = (r e r o ) e A v = = (r o ) A v is negative there is a 180 phase shift between and

19 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 19 Example 5.2 V CC R 1 I C 1 i R 2 R E C 2 C 3 a) Determine b) Calculate c) Calculate and A v for r o = d) Calculate and A v for r o = 50 k V CC = 22 V R 1 = 56 k R 2 = 8.2 k = 6.8 k R E = 1.5 k C 1 = 10 μf C 2 = 10 μf C 3 = 20 μf β=90 V BE = 0.7 V a) Regarding DC conditions ; I E = 1.41 ma 26 mv = = I E b) = = 1.66 k = (R 1 R 2 ) = 1.35 k c) = r o ( 6.8 k ) = 6.8 k A v = = (r o ) = 6.8x = d) = r o (50k 6.8 k ) = 5.98 k A v = = (r o ) = 5.98x = 324.3

20 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Emitter Bias Configuration (CE) V CC small-signal AC equivalent of the network using model I b I c C 2 C 1 βi b R E R E - Z b Emitter resistor is not by-passed With no r o effect. In most application for the sake of simplification its effect can be ignored. r o 10 R E if r o r 1 o can be ignored

21 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 21 = I b I b βi b R E Z b = = βr I e 1 β R E b = Z b β is much greater than 1, R E is greater than Z b βr E = βr E When is zero, I b = 0 βi b = 0, = R c = βi b = I b I b βi b R E A v = βi b = I b I b βi b R E R E A v is negative there is a 180 phase shift between and

22 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 22 Example 5.3 V CC I C 1 i R E If R 3 is by-passed C 2 a) Determine b) Calculate c) Calculate and A v a) = 26 mv I E V CC = 20V = 470 k = 2.2 k R E = 0.56 k C 1 = 10 μf C 2 = 10 μf β=120 V BE = 0.7 V r o = 40 k = 5.99 b) = ( ) = c) = = 2.2 k a) Regarding DC conditions ; I B = μa, I E = 4.35 ma 26 mv = = 5.99 I E r o 10 R E.? r o 1.? 40x x 10 3 True 40x True We can ignore r o b) Z b = = βr I e 1 β R E = k b = Z b = 470 k k = k c) = = 2.2 k A v = = 3.69 R E A v = =

23 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Collector Feedback Configuration (CE) V CC small-signal AC equivalent of the network using model C 2 I R i B I 1 C 1 I b I c βi b - With no r o effect. In most application for the sake of simplification its effect can be ignored. r o 10 if r o can be ignored

24 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 24 I R i B I 1 If I b I c βi b - = = = re 1 1 β When is zero, I b = 0,βI b = 0, I e = 0 = = I 1 βi b βi b I 1 βi b I b = We have to relate with to find I 1 = I 1 = = βi b = β = 1 = 1 1 = I b = I 1 = = = = 1 1 re = 0 A V = =

25 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 25 Example 5.4 C 1 V CC a) Determine b) Calculate c) Calculate and A v C 2 V CC = 9V = 180 k = 2.7 k C 1 = 10 μf C 2 = 10 μf β=200 V BE = 0.7 V r o a) Regarding DC conditions ; I B = μa, I E = 2.32 ma 26 mv = = I E r o 10 True True We can ignore r o b) = 1 βr = C c) = = 2.6 k A v = = =

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D)

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 7 DC BIASING FETS (CONT D)

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 7 DC BIASING FETS (CONT D) KOM751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU Control and Automation Dept. 1 7 DC BIASING FETS (CONT D) Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

More information

Chapter 5. BJT AC Analysis

Chapter 5. BJT AC Analysis Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION 4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration

More information

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59 Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Lecture 7: Transistors and Amplifiers

Lecture 7: Transistors and Amplifiers Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many

More information

ESE319 Introduction to Microelectronics. Output Stages

ESE319 Introduction to Microelectronics. Output Stages Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

EE105 Fall 2014 Microelectronic Devices and Circuits

EE105 Fall 2014 Microelectronic Devices and Circuits EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

More information

Chapter 9 Bipolar Junction Transistor

Chapter 9 Bipolar Junction Transistor hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

Junction Bipolar Transistor. Characteristics Models Datasheet

Junction Bipolar Transistor. Characteristics Models Datasheet Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-4 Biasing

More information

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

ESE319 Introduction to Microelectronics. BJT Biasing Cont. BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities:

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities: Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: n-type (favor e-), p-type (favor holes) for conduction Whereas the diode was a -junction

More information

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007

More information

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

(Refer Slide Time: 1:41)

(Refer Slide Time: 1:41) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 13 Module no 01 Midband Analysis of CB and CC Amplifiers We are

More information

Chapter 10 Instructor Notes

Chapter 10 Instructor Notes G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

The Common-Emitter Amplifier

The Common-Emitter Amplifier c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208   Department of EECE lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount

More information

55:041 Electronic Circuits The University of Iowa Fall Final Exam

55:041 Electronic Circuits The University of Iowa Fall Final Exam Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller

More information

Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: Biasing and Small Signal Model Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED

More information

ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model

ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

(Refer Slide Time: 1:49)

(Refer Slide Time: 1:49) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 14 Module no 01 Midband analysis of FET Amplifiers (Refer Slide

More information

Section 5.4 BJT Circuits at DC

Section 5.4 BJT Circuits at DC 12/3/2004 section 5_4 JT Circuits at DC 1/1 Section 5.4 JT Circuits at DC Reading Assignment: pp. 421-436 To analyze a JT circuit, we follow the same boring procedure as always: ASSUME, ENFORCE, ANALYZE

More information

Delhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:

Delhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web:     Ph: Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: E-mail: info@madeeasy.in Ph: 0-4546 CLASS TEST 08-9 ELECTCAL ENGNEENG Subject

More information

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both

More information

Device Physics: The Bipolar Transistor

Device Physics: The Bipolar Transistor Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers 6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,

More information

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with

More information

(e V BC/V T. α F I SE = α R I SC = I S (3)

(e V BC/V T. α F I SE = α R I SC = I S (3) Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also

More information

Examination paper for TFY4185 Measurement Technique/ Måleteknikk

Examination paper for TFY4185 Measurement Technique/ Måleteknikk Page 1 of 14 Department of Physics Examination paper for TFY4185 Measurement Technique/ Måleteknikk Academic contact during examination: Patrick Espy Phone: +47 41 38 65 78 Examination date: 15 August

More information

7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING

7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING à 7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Figure. AC coupled common emitter amplifier circuit ü The DC Load Line V CC = I CQ + V CEQ + R E I EQ I EQ = I CQ + I BQ I

More information

PHYS225 Lecture 9. Electronic Circuits

PHYS225 Lecture 9. Electronic Circuits PHYS225 Lecture 9 Electronic Circuits Last lecture Field Effect Transistors Voltage controlled resistor Various FET circuits Switch Source follower Current source Similar to BJT Draws no input current

More information

CHAPTER 7 - CD COMPANION

CHAPTER 7 - CD COMPANION Chapter 7 - CD companion 1 CHAPTER 7 - CD COMPANION CD-7.2 Biasing of Single-Stage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and field-effect

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

INFORMATION ABOUT THE COURSE

INFORMATION ABOUT THE COURSE KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 INFORMATION ABOUT THE COURSE KOM2751 Analog Electronics KOM2751 Analog Electronics :: Dr. Muharrem Mercimek ::

More information

Section 1: Common Emitter CE Amplifier Design

Section 1: Common Emitter CE Amplifier Design ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open

More information

Bipolar junction transistors

Bipolar junction transistors Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma

More information

ECEE 352 Analog Electronics. DC Power Supply Winter 2016

ECEE 352 Analog Electronics. DC Power Supply Winter 2016 ECEE 352 Analog Electronics DC Power Supply Winter 2016 This Document Produced By: Leo Filippini lf458@drexel.edu Instructor: Prof. Basavaiah basu@coe.drexel.edu TA: Zhihuan Wang zw78@drexel.edu The goal

More information

Switching circuits: basics and switching speed

Switching circuits: basics and switching speed ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V

More information

VI. Transistor amplifiers: Biasing and Small Signal Model

VI. Transistor amplifiers: Biasing and Small Signal Model VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.

More information

Transistor Characteristics and A simple BJT Current Mirror

Transistor Characteristics and A simple BJT Current Mirror Transistor Characteristics and A simple BJT Current Mirror Current-oltage (I-) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current

More information

Small-Signal Midfrequency BJT Amplifiers

Small-Signal Midfrequency BJT Amplifiers Small-Signal Midfrequency JT Amplifiers 6.. INTRODUTION For sufficiently small emitter-collector voltage and current excursions about the quiescent point (small signals), the JT is considered linear; it

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut

mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut dthiebaut@smith.edu Crash Course in Electricity and Electronics Zero Physics background expected!

More information

COMPLEMENTARY NPN/PNP TRANSISTOR

COMPLEMENTARY NPN/PNP TRANSISTOR SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

More information

Experiment Determining the beta where it is stable.(6) Analysis and design of dc-biased transistor configurations (9)

Experiment Determining the beta where it is stable.(6) Analysis and design of dc-biased transistor configurations (9) Visit http://electronicsclub.cjb.net for more resources DC BIASING BJTs (Analysis & Design) Design Procedure..(3) Limits of operation....(3) BJT modes of operation...(4) The Beta(h FE ).....(5) Experiment

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

Active Circuits: Life gets interesting

Active Circuits: Life gets interesting Actie Circuits: Life gets interesting Actie cct elements operational amplifiers (OP AMPS) and transistors Deices which can inject power into the cct External power supply normally comes from connection

More information

Electronics II. Midterm #2

Electronics II. Midterm #2 The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm - StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm

More information

CE/CS Amplifier Response at High Frequencies

CE/CS Amplifier Response at High Frequencies .. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3

More information

FYSE400 ANALOG ELECTRONICS

FYSE400 ANALOG ELECTRONICS YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

AC Circuits Homework Set

AC Circuits Homework Set Problem 1. In an oscillating LC circuit in which C=4.0 μf, the maximum potential difference across the capacitor during the oscillations is 1.50 V and the maximum current through the inductor is 50.0 ma.

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam

More information

FET Small-Signal Analysis

FET Small-Signal Analysis CHAPTER FET mall-ignal Analysis 9 9.1 INTROUCTION Field-effect transistor amplifiers provide an excellent voltage gain with the added feature of a high input impedance. They are also considered low-power

More information

Forward-Active Terminal Currents

Forward-Active Terminal Currents Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.

More information

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER: UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency

More information

assess the biasing requirements for transistor amplifiers

assess the biasing requirements for transistor amplifiers 1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.

More information

Chapter 13 Bipolar Junction Transistors

Chapter 13 Bipolar Junction Transistors Chapter 3 ipolar Junction Transistors Goal. ipolar Junction Transistor Operation in amplifier circuits. 2. Load-line Analysis & Nonlinear Distortion. 3. Large-signal equialent circuits to analyze JT circuits.

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:

More information

6.301 Solid-State Circuits Recitation 14: Op-Amps and Assorted Other Topics Prof. Joel L. Dawson

6.301 Solid-State Circuits Recitation 14: Op-Amps and Assorted Other Topics Prof. Joel L. Dawson First, let s take a moment to further explore device matching for current mirrors: I R I 0 Q 1 Q 2 and ask what happens when Q 1 and Q 2 operate at different temperatures. It turns out that grinding through

More information