CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130


 Jonah Bishop
 8 months ago
 Views:
Transcription
1 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED MEMOANDA alculators Only Students MUST count the number of pages in this examination question paper before beginning to write, and report any discrepancy immediately to a proctor. This question paper has 6 pages. This examination question paper MAY be taken from the examination room. Information and Instructions: 1. Attempt all questions.. Show all analysis. 3. The exam marks total Unless otherwise specified, use only the simplified transistor model for the BJT, i.e., take r x =0, r o =, and r µ =. Useful Formulas r β π =, ( ) e g m g m = µ r = β 1 r π, ox W I L DS β α =, β 1 Z Z L o, Γ =, L Z Z o I g m =, V T 5mV VT r r H E = µ t The average of a half sine wave with amplitude of 1 is 1/π. dv d x a = =, Money = Power = VI = I = Evil dt dt 0 forward biased V BE = 0.7 Volts ω L ω L1 ω L ω L3... and... ω ω ω ω H H1 H Miller s Theorem: Y v = 1 Y 1, v v 1 = 1 Y Y 1 v dy x Sensitivity: S y x = dx y H 3
2 ELE 3509 Final Examination December 005 Question 1 (Total 14 Marks) Answer the following questions. marks (a) A transistor is biased at 10µA, has an early voltage of 100V and β =100. What are the values of r e, r π, r o, and g m? 4 marks (b) For the class B amplifier shown in figure 1, assuming that you cannot ignore the 0.7V V BE drop in the transistor, and also assuming that the input cannot go above the rails, what the is maximum voltage swing possible in this circuit? What is the output power in this case? What is the average current drawn from the supplies? What is the efficiency? V = 5V V in Q 1 V out Q load = 100Ω V ss = 5V Figure 1 marks (c) A power transistor in a case has a heat sink attached. The junction to case, case to heat sink and heat sink to air thermal resistances are 0.9 /W, 0.1 /W, and 1. /W respectively. If the ambient temperature is 5 and the transistor is dissipating 100W what is the junction temperature? marks (d) In the s plane, draw the poles for a nd order filter, an unstable circuit with growing amplitude, and an unstable circuit with constant amplitude. 4 marks (e) In a completely fictional transistor the collector current as a function 3 l of base emitter voltage is given by e V I BE = 10 e where le is the emitter length. What is the g m of this device?
3 ELE 3509 Final Examination December 005 Question (Total Marks) When analyzing the amplifier circuit in Figure, use appropriate models, to find generalized expressions (i.e. without component values unless specifically asked for). 4 marks (a) Draw the smallsignal equivalent circuit. 3 marks (b) Find the midband gain A v. marks (c) Find the midband in. marks (d) Find the mid band out (include r o1, r o and r µ ). 3 marks (e) Find the low frequency poles (ω L s). 4 marks (f) Find the high frequency poles (ω H s) for the circuit. You may ignore π. 4 marks (g) With V = 15V, 3 = kω, determine 1,, 1, and E, such that I 1 = 1mA and I = ma and the voltage on the collector of Q 1 is 10V. Set the current through to be 10 times the base current of Q 1, (assume β = 100), but for all other calculations, you may ignore base current. V V V in in 1 1 E o out s Q L Q 1 v s 3 Figure 3
4 ELE 3509 Final Examination December 005 Question 3 (Total 18 Marks) In this question, all transistors are assumed to be matched. Perform the following analysis on the op amp circuit of Figure 3(a). Assume that r µ = for all transistors. 10 marks (a) Draw the small signal model and use it to find: (i) The differential mode gain A DM with output at v x. (ii) The differential mode input impedance DM. (iii) The common mode input impedance M. 5 marks (b) With V cc = 5V, and V EE = 5V (i) Design a current mirror to replace the current source I o (and its impedance o ). alculate the required value of Bias (at the input of the current mirror to ground) such that I 1 = I = 50 µa. edraw the circuit to show the current mirror, Q 1, Q, Q 3, Q 4, and x. (ii) Find the minimum and maximum input commonmode voltage v icm,min and v icm,max. 3 marks (c) Now consider Figure 3(b) which shows the resistor x replaced with a class AB output stage. (i) Determine the value of E such that the ouput transistors Q 5 and Q 6 are biased at I 5 = I 6 = 4 ma. (ii) Determine the voltage v x when the output voltage is 0 V. 5 V 5 V I DD o I o o I o Q 5 E v in Q 1 Q v in  v in Q 1 Q v in  E v o Q 3 Q 4 v x x Q 3 Q 4 vx I DD Q 65 V Figure 3(a) 5 V Figure 3(b) 4
5 ELE 3509 Final Examination December 005 Question 4 (Total 17 Marks) 8 marks vout ( s) (a) Derive the transfer function v ( s) in of the circuit shown in Figure 4. v in v out 9 marks (b) onsider the following circuit: Figure 4 v in 1 ( s) = s s 1 s S( s) = s 50s v 1 v v out Figure 5 Where the voltage transfer functions for each of the boxes is v 1 /v in = (s) and v /v in = S(s) respectively. Sketch each of these two transfer functions (include corner frequency gains, Qs, and gain in flat regions, and drop off rates), and then sketch in a reasonable amount of detail the overall magnitude response v out /v in of the circuit. 5
6 ELE 3509 Final Examination December 005 Question 5 (Total 11 Marks) 7 marks (a) For the oscillator shown in Figure 6, apply Barkhausen criteria to find the oscillating frequency showing any necessary derivation. Then find out what is the necessary value of K to start the oscillator. 3V K Figure 6 4 marks (b) The opamps used above are powered from ±15V supplies. How big would you expect the oscillator output to get assuming that the zener diodes each have a reverse breakdown of 5V? What is the change in the loop gain when the zener diodes become active? 3V 6
ESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the opamp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example SmallSignal BJT Models SmallSignal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationECE342 Test 3: Nov 30, :008:00, Closed Book. Name : Solution
ECE342 Test 3: Nov 30, 2010 6:008:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (opamp) An opamp is a highgain amplifier that has high input impedance and low output impedance. An ideal opamp has infinite gain and
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date  Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer  D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationPHYS225 Lecture 9. Electronic Circuits
PHYS225 Lecture 9 Electronic Circuits Last lecture Field Effect Transistors Voltage controlled resistor Various FET circuits Switch Source follower Current source Similar to BJT Draws no input current
More informationDepartment of Electrical Engineering and Computer Sciences University of California, Berkeley. Final Exam Solutions
Electrical Engineering 42/00 Summer 202 Instructor: Tony Dear Department of Electrical Engineering and omputer Sciences University of alifornia, Berkeley Final Exam Solutions. Diodes Have apacitance?!?!
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: Email: info@madeeasy.in Ph: 04546 CLASS TEST 089 ELECTCAL ENGNEENG Subject
More information6.301 SolidState Circuits Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Prof. Joel L.
Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Before we leave the topic of transimpedance amplifiers completely, there is one biasing mystery that is worth clearing
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationEE 321 Analog Electronics, Fall 2013 Homework #3 solution
EE 32 Analog Electronics, Fall 203 Homework #3 solution 2.47. (a) Use superposition to show that the output of the circuit in Fig. P2.47 is given by + [ Rf v N + R f v N2 +... + R ] f v Nn R N R N2 R [
More informationTransistor Characteristics and A simple BJT Current Mirror
Transistor Characteristics and A simple BJT Current Mirror Currentoltage (I) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationECE342 Test 2 Solutions, Nov 4, :008:00pm, Closed Book (one page of notes allowed)
ECE342 Test 2 Solutions, Nov 4, 2008 6:008:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationUniversity of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS
University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits Final Exam 10Dec08 SOLUTIONS This exam is a closed book exam. Students are allowed to use a
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for nonideal transistor behavior Incremental output port resistance Incremental changes
More informationLecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics. Lena Peterson
Lecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics Lena Peterson 20151013 Outline (1) Why is the CMOS inverter gain not infinite? Largesignal
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationWhereas the diode was a 1junction device, the transistor contains two junctions. This leads to two possibilities:
Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: ntype (favor e), ptype (favor holes) for conduction Whereas the diode was a junction
More informationTutorial #4: Bias Point Analysis in Multisim
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 WideSwing Current Mirrors I bias I V I in out out = I in V W L bias 
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V Odm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V Odm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V Odm is the differential output offset
More informationSystematic Design of Operational Amplifiers
Systematic Design of Operational Amplifiers Willy Sansen KULeuven, ESATMICAS Leuven, Belgium willy.sansen@esat.kuleuven.be Willy Sansen 1005 061 Table of contents Design of Singlestage OTA Design of
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE:  A circuit that increases the amplitude of given signal is an amplifier  Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December 2016
CARLETON UNIVERSITY FINAL EXAMINATION December 2016 DURATION: 3 HOURS Department Name & Course Number: Electronics 4705 Course Instructor(s): Tom Smy AUTHORIZED MEMORANDA CALCULATOR (Not Programmable)
More informationECE 6412, Spring Final Exam Page 1
ECE 64, Spring 005 Final Exam Page FINAL EXAMINATION SOLUTIONS (Average score = 89/00) Problem (0 points This problem is required) A comparator consists of an amplifier cascaded with a latch as shown below.
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OPAMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OPAMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 Email: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OPAMP It consists of two stages: First
More informationECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120
ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of
More informationV in (min) and V in (min) = (V OH V OL ) dv out (0) dt = A p 1 V in = = 10 6 = 1V/µs
ECE 642, Spring 2003  Final Exam Page FINAL EXAMINATION (ALLEN)  SOLUTION (Average Score = 9/20) Problem  (20 points  This problem is required) An openloop comparator has a gain of 0 4, a dominant
More informationassess the biasing requirements for transistor amplifiers
1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage
More informationOPAMPs I: The Ideal Case
I: The Ideal Case The basic composition of an operational amplifier (OPAMP) includes a high gain differential amplifier, followed by a second high gain amplifier, followed by a unity gain, low impedance,
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9  JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a threeterminal
More informationCHAPTER 7  CD COMPANION
Chapter 7  CD companion 1 CHAPTER 7  CD COMPANION CD7.2 Biasing of SingleStage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and fieldeffect
More informationECE 201 Fall 2009 Final Exam
ECE 01 Fall 009 Final Exam December 16, 009 Division 0101: Tan (11:30am) Division 001: Clark (7:30 am) Division 0301: Elliott (1:30 pm) Instructions 1. DO NOT START UNTIL TOLD TO DO SO.. Write your Name,
More informationECE 202 Fall 2013 Final Exam
ECE 202 Fall 2013 Final Exam December 12, 2013 Circle your division: Division 0101: Furgason (8:30 am) Division 0201: Bermel (9:30 am) Name (Last, First) Purdue ID # There are 18 multiple choice problems
More informationEE214 Early Final Examination: Fall STANFORD UNIVERSITY Department of Electrical Engineering. SAMPLE FINAL EXAMINATION Fall Quarter, 2002
STANFORD UNIVERSITY Department of Electrical Engineering SAMPLE FINAL EXAMINATION Fall Quarter, 2002 EE214 8 December 2002 CLOSED BOOK; Two std. 8.5 x 11 sheets of notes permitted CAUTION: Useful information
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model commonemitter fixedbias voltagedivider bias emitterbias & emitterfollower commonbase configuration Transistor
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIBR T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIBR T7 Session 089 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More information6.301 SolidState Circuits Recitation 14: OpAmps and Assorted Other Topics Prof. Joel L. Dawson
First, let s take a moment to further explore device matching for current mirrors: I R I 0 Q 1 Q 2 and ask what happens when Q 1 and Q 2 operate at different temperatures. It turns out that grinding through
More informationChapter 10 Feedback. PART C: Stability and Compensation
1 Chapter 10 Feedback PART C: Stability and Compensation Example: Noninverting Amplifier We are analyzing the two circuits (nmos diff pair or pmos diff pair) to realize this symbol: either of the circuits
More informationEE201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) 2V (4) 1V (5) 1V (6) None of above
EE201, Review Probs Test 1 page1 Spring 98 EE201 Review Exam I Multiple Choice (5 points each, no partial credit.) 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) 2V (4) 1V (5) 1V (6)
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationEECE 2150 Circuits and Signals, Biomedical Applications Final Exam Section 3
EECE 2150 Circuits and Signals, Biomedical Applications Final Exam Section 3 Instructions: Closed book, closed notes; Computers and cell phones are not allowed You may use the equation sheet provided but
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationE40M Review  Part 1
E40M Review Part 1 Topics in Part 1 (Today): KCL, KVL, Power Devices: V and I sources, R Nodal Analysis. Superposition Devices: Diodes, C, L Time Domain Diode, C, L Circuits Topics in Part 2 (Wed): MOSFETs,
More informationCHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS
CHAPTER 4 SIGNA GENERATORS AND WAEFORM SHAPING CIRCUITS Chapter Outline 4. Basic Principles of Sinusoidal Oscillators 4. Op Amp RC Oscillators 4.3 C and Crystal Oscillators 4.4 Bistable Multivibrators
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationTime Varying Circuit Analysis
MAS.836 Sensor Systems for Interactive Environments th Distributed: Tuesday February 16, 2010 Due: Tuesday February 23, 2010 Problem Set # 2 Time Varying Circuit Analysis The purpose of this problem set
More informationECE2262 Electric Circuits. Chapter 4: Operational Amplifier (OPAMP) Circuits
ECE2262 Electric Circuits Chapter 4: Operational Amplifier (OPAMP) Circuits 1 4.1 Operational Amplifiers 2 4. Voltages and currents in electrical circuits may represent signals and circuits can perform
More information1/13/12 V DS. I d V GS. C ox ( = f (V GS ,V DS ,V SB = I D. + i d + I ΔV + I ΔV BS V BS. 19 January 2012
/3/ 9 January 0 Study the linear model of MOS transistor around an operating point." MOS in saturation: V GS >V th and V S >V GS V th " VGS vi  I d = I i d VS I d = µ n ( L V V γ Φ V Φ GS th0 F SB F
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT3 Department of Electrical and Computer Engineering Winter 2012 1. A commonemitter amplifier that can be represented by the following equivalent circuit,
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More informationExamination paper for TFY4185 Measurement Technique/ Måleteknikk
Page 1 of 14 Department of Physics Examination paper for TFY4185 Measurement Technique/ Måleteknikk Academic contact during examination: Patrick Espy Phone: +47 41 38 65 78 Examination date: 15 August
More informationU1 is zero based because its noninverting terminal is connected to circuit common. Therefore, the circuit reference voltage is 0 V.
When you have completed this exercise, you will be able to operate a zenerclamped op amp comparator circuit using dc and ac voltages. You will verify your results with an oscilloscope. U1 is zero based
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationEE 330. Lecture 35. Parasitic Capacitances in MOS Devices
EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A  β β VXX Q 2
More informationECE2210 Final given: Spring 08
ECE Final given: Spring 0. Note: feel free to show answers & work right on the schematic 1. (1 pts) The ammeter, A, reads 30 ma. a) The power dissipated by R is 0.7 W, what is the value of R. Assume that
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 Third Exam Closed Book and Notes Fall 2002 November 27, 2002 General Instructions: 1. Write on one side of the
More informationECEN 326 Electronic Circuits
ECEN 326 Electronic Circuits Stability Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering Ideal Configuration V i Σ V ε a(s) V o V fb f a(s) = V o V ε (s)
More informationECE137B Final Exam. There are 5 problems on this exam and you have 3 hours There are pages 119 in the exam: please make sure all are there.
ECE37B Final Exam There are 5 problems on this exam and you have 3 hours There are pages 9 in the exam: please make sure all are there. Do not open this exam until told to do so Show all work: Credit
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More information