BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

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1 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR9/F/L BCR9T/W C C B E R R R TR R R TR R B E E B C EHA78 EHA77 Type Marking Pin Configuration Package BCR9 BCR9F BCR9L WOs WOs WO =B =B =B =E =E =E =C =C =C WOs =E =B =C 4=E 5=B 6=C BCR9T BCR9W WOs WOs WO =B =B =E =E =E =B =C =C =C 4=E 5=B 6=C SOT TSFP TSLP4 SOT6 SC75 SOT SOT666 May84

2 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 5 V Collectorbase voltage V CBO 5 Emitterbase voltage V EBO Input on voltage V i(on) Collector current I C ma Total power dissipation P tot BCR9, C BCR9F, 8 C BCR9L, 5 C, 5 C BCR9T, 9 C BCR9W, 4 C, 75 C Junction temperature T j 5 C Storage temperature T stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs BCR9 BCR9F BCR9L BCR9T BCR9W For calculation of RthJA please refer to Application Note Thermal Resistance May84

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = µa, I B = V (BR)CEO 5 V Collectorbase breakdown voltage I C = µa, I E = Collectorbase cutoff current V CB = 4 V, I E = Emitterbase cutoff current V EB = V, I C = DC current gain ) I C = 5 ma, V CE = 5 V Collectoremitter saturation voltage ) I C = ma, I B =,5 ma Input off voltage I C = µa, V CE = 5 V Input on voltage I C = ma, V CE =, V V (BR)CBO 5 I CBO na I EBO 5 µa h FE 5 V CEsat, V V i(off),8,5 V i(on),5 Input resistor R 5 9 kω Resistor ratio R /R,9, AC Characteristics Transition frequency I C = ma, V CE = 5 V, f = MHz Collectorbase capacitance V CB = V, f = MHz f T MHz C cb pf Pulse test: t < µs; D < % May84

4 DC current gain h FE = ƒ(i C ) V CE = 5 V (common emitter configuration) Collectoremitter saturation voltage V CEsat = ƒ(i C ), h FE = ma hfe IC ma I C Input on Voltage Vi (on) = ƒ(i C ) V CE =.V (common emitter configuration) V V CEsat Input off voltage V i(off) = ƒ(i C ) V CE = 5V (common emitter configuration) ma ma IC IC V V i(on).5.5 V V i(off) 4 May84

5 BCR9 BCR9F C C 5 BCR9L C C 5 5 May84

6 BCR9T BCR9W C C C 5 6 May84

7 R thjs = ƒ( ) BCR9 BCR D = max / DC D = s Permissible Puls Load R thjs = ƒ ( ) BCR9F s BCR9F D= max/dc D= s s 7 May84

8 Permissible Puls Load R thjs = ƒ ( ) BCR9L BCR9L D = max/ DC D = s Permissible Puls Load R thjs = ƒ ( ) s D = max / DC D = s s 8 May84

9 Permissible Puls Load R thjs = ƒ ( ) BCR9T BCR9T D= max / DC D= s Permissible Puls Load R thjs = ƒ ( ) BCR9W s BCR9W D = max / DC D = s s 9 May84

10 Permissible Puls Load R thjs = ƒ ( ) D = max/ DC D = s s May84

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