Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
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1 Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: Physics and Electronics Lecture 6 (2 nd Half), Year: 2007 Physics Department, Faculty of Science, Chulalongkorn University 8/11/2007 Contents 1 Bipolar Junction Transistors Common-Emitter Circuit Load-Line Analysis PNP BJN Common-Emitter Circuit Problems 8 1 Bipolar Junction Transistors BJT s Structure (in Fig. 1 and 2) NPN Transistor Currents (in Figure 3) PNP Transistor Currents (in Figure 4) Both types of BJT can be activated since BE is forward bias Physics and Electronics (file: lec06 2.tex) 1 Tianprateep, M.
2 Reverse Bias I C(huge) I C(huge) I B(small) I B(small) I E = I C + I B I E = I C + I B Forward Bias Figure 3 The direction of current in NPN transistor. I C I B I E = I C + I B Figure 4 The direction of current in PNP transistor Physics and Electronics (file: lec06 2.tex) 2 Tianprateep, M.
3 Figure 5 common emitter circuit configuration for the NPN BJT. Equations of Operation i E = i C + i B At BE (forward bias): Shockley equation [ i E = I ES exp ( v BE 1 ) ] V T =300K Since CB is reverse bias; define α = i C i E : β = i C = i B i C = βi B = αi E α α i B = (1 α)i E 1.1 Common-Emitter Circuit Common-Emitter Circuit in Fig. 5 v CE > v BE ; v BC is negative (reverse bias). v BC = v BE v CE Common-Emitter Input Characteristics (Fig. 6) [ i B = (1 α)i ES exp ( v BE 1 ) ] V T v BE V Physics and Electronics (file: lec06 2.tex) 3 Tianprateep, M.
4 Figure 6 common emitter input characteristic of a typical NPN BJT. v CE < v BE CB:reverse; v CE > v BE : i C = βi B Figure 7 common emitter output characteristic of a typical NPN BJT Physics and Electronics (file: lec06 2.tex) 4 Tianprateep, M.
5 Figure 8 A simple common emitter amplifier that can be analyzed by load-line techniques. Figure 9 Input load line (shifts to dashed line for a smaller value of v in ). Common-Emitter Output Characteristics (Fig. 7) Ex: At v CE = 4 V and i B = 30 µa: i C = 3 ma and β = i C /i B = Load-Line Analysis Load-Line Equations (Fig. 8) V BB + vin(t) = R B i B (t) + vbe(t) : for input V CC = R C i C + v CE : for output Analysis of Input Circuit (Fig. 9) Analysis of Output Circuit (Fig. 10) Physics and Electronics (file: lec06 2.tex) 5 Tianprateep, M.
6 Figure 10 Output load line. Figure 11 Input load line for Example 1. Example 1. V CC = 10 V, V BB = 1.6 V, R B = 40 kω, and R C = 2 kω. Input signal: 0.4 V pp 1 khz sinusoid of 0.4 sin(2000πt). Find the max, min and Q point value for v CE. (Fig ) Inverting amplifier Nonlinear Distortion (Fig ) 1.3 PNP BJN Common-Emitter Circuit Equation of Operation Physics and Electronics (file: lec06 2.tex) 6 Tianprateep, M.
7 Figure 12 Input load line for Example 1. Figure 13 clipping occurs when the instantaneous operating point enters saturation or cutoff. In saturation, vce = 0.2 V. Figure 14 Output of the amplifier of sinusoidal wave that the operating point of its vm enters in saturation or cutoff region Physics and Electronics (file: lec06 2.tex) 7 Tianprateep, M.
8 Figure 15 PNP-BJT simple common-emitter amplifier circuit. i E = i C + i B i C = αi E i B = (1 α)i E i C = βi B α 0.99 β 100 PNP-BJT Common-Emitter Amplifier (Fig. 15) Common-Emitter Input Characteristics (Fig. 16) Common-Emitter Output Characteristics (Fig. 17) 2 Problems 1. A certain transistor has β = 50, I ES = A, v CE = 5 V, and i E = 10 ma. Assume that V T = V. Find v BE, V BC, i B, i C, andα. 2. Compute the corresponding values of β if α = 0.9, 0.99, and A certain transistor operated with forward bias of the base emitter junction and reverse bias of the base collector junction has i C = 9.5 ma and i E = 10 ma. Find the value of i B, α, and β. 4. Repeat Example 1 if v in = 0.8 sin(2000πt). Find the values of V CEmax, V CEQ, and V CEmin Physics and Electronics (file: lec06 2.tex) 8 Tianprateep, M.
9 Figure 16 Common emitter input characteristic for a PNP BJT. Figure 17 Common emitter output characteristic for a PNP BJT Physics and Electronics (file: lec06 2.tex) 9 Tianprateep, M.
10 5. Repeat Example 1 if v in = 0.8 sin(2000πt) and V BB = 1.2 V. Find the values of V CEmax, V CEQ, and V CEmin. 6. Find the value of α and β for the transistor having the characteristics shown in Figure 16 and (a) Use load line analysis to find the maximum, minimum and Q point values of i B and v CE for the amplifier circuit shown in Figure 15. Use the characteristics shown in Figure 16 and 17. (b) Does this PNP common emitter amplifier invert the signal? Physics and Electronics (file: lec06 2.tex) 10 Tianprateep, M.
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