7. DESIGN OF ACCOUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING


 Edwina Reynolds
 2 years ago
 Views:
Transcription
1 à 7. DESIGN OF ACCOUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Figure. AC coupled common emitter amplifier circuit ü The DC Load Line V CC = I CQ + V CEQ + R E I EQ I EQ = I CQ + I BQ I CQ =b EFF.I BQ I EQ = Hb EFF + L ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ.I CQ > I CQ b EFF These equations lead to a linear relationship between I CQ and V CEQ which is imposed on the DC operating point of the transistor by the circuit. V CC = i j + R Hb EFF + L y E ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z.i CQ + V CEQ k { b EFF I CQ = HV CC  V CEQ Lì A + R i E j + y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ze k b EFF { or, the "DC Load Line Equation"
2 2 7.BJT Amps. for Undistorted VoltageSwingX. Slope of DC Load Line : DI CQ ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ DV CEQ = A + R i E j + y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ k b EFF {  ze > + R E D  Figure 2. shows the DC load line of the circuit drawn on the collector characteristics of an NPN transistor. Figure 2. Collector characteristics of an NPN transistor and the DC load line ü AC Load Line Di C = f HDv CE L Dv CE =Dv OUT Assumptions: () The capacitors are all large enough to hold the voltage across their terminals constant during the signal's period, (2) Therefore, the operating point QHI CQ, V CEQ ) remains constant independent of the amplitude of the signal fluctuations in currents and voltages. If that is the case, the capacitors in the circuit can be taken to behave like DC voltage sources as shown in Figure 3.
3 7.BJT Amps. for Undistorted VoltageSwingX.nb Figure 3. Behavioral equivalent of the common emitter stage with very large capacitors Dv CE =Dv C Dv E and Di C =Di RC +Di RL, Dv E = 0 constant Di RC =D i j V CC  v C y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z = Dv C ÄÄÄÄÄÄÄÄÄÄÄÄ k { Di RL = Dv OUT ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ Dv OUT = v C  V CQ =Dv C îdi RL = Dv C ÄÄÄÄÄÄÄÄÄÄÄÄ R L But, Dv C =D Hv CE + V EQ L = Dv CE \ Di C = Dv CE ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ  Dv CE ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ R L or, Di C = i j ÄÄÄÄÄÄÄÄÄÄ + y ÄÄÄÄÄÄÄÄ z Dv CE which defines the "AC load line" k R L { Slope of AC Load Line i j ÄÄÄÄÄÄÄÄÄÄ + y ÄÄÄÄÄÄÄÄ z ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ k R L { H R L L For smaller signals the resistance seen by the transistor at its collector can be found by employing the small sig ac equivalent of the circuit (given in Figure 4) is the same, i.e. ( êê R L ), which confirms the slope calcula above. R L
4 4 7.BJT Amps. for Undistorted VoltageSwingX. Figure 4. Resistance seen by the collector during small signal operation In Figure 2. both AC and DC load lines are shown as drawn on the collector characteristics of an NPN transi Note that both of the lines have to pass through the operating point, Q. The AC load line defines the rang collector the current and voltage swings that can take place around the operating point, the range limited on the by the saturation region of the transistor characteristics and on the right by its cutoff point. If the swings ten exceed these limits, the waveform is clipped, creating severe distortion in the amplified signal. The undisto (unclipped) voltage swing is restricted to v MAX+ and v MAX+ around the operating point. (See Figure 5.). Dv MAX+ =Dv MAX 2. Dv MAX+ = R AC.I CQ AC load line resistance R AC = H R L L Dv MAX+ = V CEQ  v CESAT
5 7.BJT Amps. for Undistorted VoltageSwingX.nb Figure 5. AC load line and the maximum undistorted output swing
6 6 7.BJT Amps. for Undistorted VoltageSwingX. ü 7. DESIGN OF COMMON EMITTER BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Rewriting the maximum peak undistorted swing conditions from above and using the condition of equal symmetric undistorted swings around the operating point an equation for maximum swing can be derived as shown below.. Dv MAX =Dv MAX+ =Dv MAX 2. Dv MAX = R AC.I CQ Æ I CQ = Dv MAX ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ R AC 3. Dv MAX = V CEQ  V CESAT Æ V CEQ = Dv MAX + V CESAT 4. V CC = V EQ + V CEQ + I CQ Equations H2L and H3L when substituted in Equation H4L V CC = V EQ + Dv MAX + V CESAT + Dv MAX. H5. al Dv i MAX j + k ÄÄÄÄÄÄÄÄÄÄÄÄ R AC y ÄÄÄÄÄÄÄÄÄÄÄÄ z = V CC  V EQ  V CESAT R AC { or, H5. bl Dv i MAX j2 + y ÄÄÄÄÄÄÄÄÄÄ z = V CC  V EQ  V CESAT k R L { since ÄÄÄÄÄÄÄÄÄÄÄÄ = ÄÄÄÄÄÄÄÄÄÄ + ÄÄÄÄÄÄÄÄ R AC R L Equations 5.a and 5.b can be used as design guides to achieve a specified amount of symmetric undistorted voltage swings at the output of a commonemitter amplifier. Note that the maximum undistorted peak swing, v MAX cannot be greater than %50 of V CC even under the most favorable conditions of no load and no emitter drop, V EQ.
à 10. DC (DIRECTCOUPLED) AMPLIFIERS
0.DCAmpsX.nb à 0. DC (DIRECTCOUPLED) AMPLIFIERS ü AC COUPLED SMALL SIGNAL AMPLIFIERS ADVANTAGES:. Signal, load and the amplifier bias are separate. One can work on the bias calculations stage by stage
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationOPERATIONAL AMPLIFIER ª Differentialinput, SingleEnded (or Differential) output, DCcoupled, HighGain amplifier
à OPERATIONAL AMPLIFIERS à OPERATIONAL AMPLIFIERS (Introduction and Properties) Phase relationships: Noninverting input to output is 0 Inverting input to output is 180 OPERATIONAL AMPLIFIER ª Differentialinput,
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example SmallSignal BJT Models SmallSignal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture4 Biasing
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationChapter 3 Output stages
Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum
More informationTransistor Characteristics and A simple BJT Current Mirror
Transistor Characteristics and A simple BJT Current Mirror Currentoltage (I) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V Odm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V Odm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V Odm is the differential output offset
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationChapter 9 Frequency Response. PART C: High Frequency Response
Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cutoff frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: Email: info@madeeasy.in Ph: 04546 CLASS TEST 089 ELECTCAL ENGNEENG Subject
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model commonemitter fixedbias voltagedivider bias emitterbias & emitterfollower commonbase configuration Transistor
More informationà FIELD EFFECT TRANSISTORS
Prof.M.G.Guvench à FIELD EFFECT TRANSISTORS ü FET: CONTENTS Principles of Operation Models: DC, S.S.A.C. and SPICE Applications: AC coupled S.S. Amplifiers ü FET: NAMES JFET Junction Field Effect Transistor
More informationAs light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR
LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationPHYS225 Lecture 9. Electronic Circuits
PHYS225 Lecture 9 Electronic Circuits Last lecture Field Effect Transistors Voltage controlled resistor Various FET circuits Switch Source follower Current source Similar to BJT Draws no input current
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationThe CommonEmitter Amplifier
c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The CommonEmitter Amplifier Basic Circuit Fig. shows the circuit diagram
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationJFET CAPACITANCE CALCULATIONS
JFET CAPACITANCE CALCULATIONS JFET CAPACITANCE CALCULATIONS In order to simplify the design procedure for the frequency response of the JFET amplifier we will consider effect of each capacitance separately.
More informationECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp
ECE 34: Design Issues for oltage Follower as Output Stage S&S Chapter 14, pp. 131133 Introduction The voltage follower provides a good buffer between a differential amplifier and a load in two ways: 1.
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. CommonEmitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o >, r oc >, R L > Find V BIAS such that I C
More informationWhereas the diode was a 1junction device, the transistor contains two junctions. This leads to two possibilities:
Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: ntype (favor e), ptype (favor holes) for conduction Whereas the diode was a junction
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (opamp) An opamp is a highgain amplifier that has high input impedance and low output impedance. An ideal opamp has infinite gain and
More informationEE 330 Lecture 25. Amplifier Biasing (precursor) TwoPort Amplifier Model
EE 330 Lecture 25 Amplifier Biasing (precursor) TwoPort Amplifier Model Review from Last Lecture Exam Schedule Exam 2 Friday March 24 Review from Last Lecture Graphical Analysis and Interpretation 2 OX
More informationESE319 Introduction to Microelectronics Common Emitter BJT Amplifier
Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point 
More informationFigure Circuit for Question 1. Figure Circuit for Question 2
Exercises 10.7 Exercises Multiple Choice 1. For the circuit of Figure 10.44 the time constant is A. 0.5 ms 71.43 µs 2, 000 s D. 0.2 ms 4 Ω 2 Ω 12 Ω 1 mh 12u 0 () t V Figure 10.44. Circuit for Question
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationFEEDBACK, STABILITY and OSCILLATORS
FEEDBACK, STABILITY and OSCILLATORS à FEEDBACK, STABILITY and OSCILLATORS  STABILITY OF FEEDBACK SYSTEMS  Example : ANALYSIS and DESIGN OF PHASESHIFTOSCILLATORS  Example 2: ANALYSIS and DESIGN OF
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIBR T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIBR T7 Session 089 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationECE 145A/218A Power Amplifier Design Lectures. Power Amplifier Design 1
Power Amplifiers; Part 1 Class A Device Limitations Large signal output match Define efficiency, poweradded efficiency Class A operating conditions Thermal resistance We have studied the design of smallsignal
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9  JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a threeterminal
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationLecture 23: NorCal 40A Power Amplifier. Thermal Modeling.
Whites, EE 322 Lecture 23 Page 1 of 13 Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Recall from the last lecture that the NorCal 40A uses a Class C power amplifier. From Fig. 10.3(b) the collector
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationENGN3227 Analogue Electronics. Problem Sets V1.0. Dr. Salman Durrani
ENGN3227 Analogue Electronics Problem Sets V1.0 Dr. Salman Durrani November 2006 Copyright c 2006 by Salman Durrani. Problem Set List 1. Opamp Circuits 2. Differential Amplifiers 3. Comparator Circuits
More information(Refer Slide Time: 1:41)
Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 13 Module no 01 Midband Analysis of CB and CC Amplifiers We are
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT3 Department of Electrical and Computer Engineering Winter 2012 1. A commonemitter amplifier that can be represented by the following equivalent circuit,
More informationCHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS
CHAPTER 4 SIGNA GENERATORS AND WAEFORM SHAPING CIRCUITS Chapter Outline 4. Basic Principles of Sinusoidal Oscillators 4. Op Amp RC Oscillators 4.3 C and Crystal Oscillators 4.4 Bistable Multivibrators
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationNonlinear Opamp Circuits
deba21pratim@gmail.com Electronic Systems Group Department of Electrical Engineering IIT Bombay May 3, 2013 Overview of opamp operating regions Linear Region Occurs when the opamp output is stable i.e.
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationACADAMIC CHAPTER OF SWECHA September 2010
Swecha Documents SFSAC/ ECE / IIII/LM/2010 /ver. 1.0 LABMANAUALS DEPARTMENT : ECE ELECTRONIC CIRCUITS ANALYSIS LABORATORY MANUAL ACADAMIC CHAPTER OF SWECHA September 2010 INDEX S.NO NAME OF THE EXPERIMENT
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationECEE 352 Analog Electronics. DC Power Supply Winter 2016
ECEE 352 Analog Electronics DC Power Supply Winter 2016 This Document Produced By: Leo Filippini lf458@drexel.edu Instructor: Prof. Basavaiah basu@coe.drexel.edu TA: Zhihuan Wang zw78@drexel.edu The goal
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202  Manuel Toledo August 20, 2012 INEL 4202  Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationChargeStorage Elements: BaseCharging Capacitance C b
ChargeStorage Elements: BaseCharging Capacitance C b * Minority electrons are stored in the base  this charge q NB is a function of the baseemitter voltage * base is still neutral... majority carriers
More informationECE 6412, Spring Final Exam Page 1
ECE 64, Spring 005 Final Exam Page FINAL EXAMINATION SOLUTIONS (Average score = 89/00) Problem (0 points This problem is required) A comparator consists of an amplifier cascaded with a latch as shown below.
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationIndustrial Technology: Electronic Technology Crosswalk to AZ Math Standards
Page 1 of 1 August 1998 1MP1 Compare and contrast the real number system and its various subsystems with regard to their structural characteristics. PO 2 PO 3 2.0 Apply mathematics calculations. 2.1 Apply
More informationOperational amplifiers (Op amps)
Operational amplifiers (Op amps) v R o R i v i Av i v View it as an ideal amp. Take the properties to the extreme: R i, R o 0, A.?!?!?!?! v v i Av i v A Consequences: No voltage dividers at input or output.
More informationExample: Amplifier Distortion
4/6/2011 Example Amplifier Ditortion 1/9 Example: Amplifier Ditortion Recall thi circuit from a previou handout: 15.0 R C =5 K v ( t) = v ( t) o R B =5 K β = 100 _ vi( t ) 58. R E =5 K CUS We found that
More information5. EXPERIMENT 5. JFET NOISE MEASURE MENTS
5. EXPERIMENT 5. JFET NOISE MEASURE MENTS 5.1 Object The objects of this experiment are to measure the spectral density of the noise current output of a JFET, to compare the measured spectral density
More informationForwardActive Terminal Currents
ForwardActive Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th  e W (why minus sign? is by def.
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationElectronics II. Midterm #2
The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm  StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationFig. 1 Simple BJT (NPN) current mirror and its test circuit
1 Lab 01: Current Mirrors Total 30 points: 20 points for lab, 5 points for wellorganized report, 5 points for immaculate circuit on breadboard Note: There are two parts for this lab. You must answer the
More information0 t < 0 1 t 1. u(t) =
A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 13 p. 22/33 Step Response A unit step function is described by u(t) = ( 0 t < 0 1 t 1 While the waveform has an artificial jump (difficult
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationCMOS Analog Circuits
CMOS Analog Circuits L6: Common Source Amplifier1 (.8.13) B. Mazhari Dept. of EE, IIT Kanpur 19 Problem statement : Design an amplifier which has the following characteristics: + CC O in R L  CC A 100
More informationUniversity of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS
University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits Final Exam 10Dec08 SOLUTIONS This exam is a closed book exam. Students are allowed to use a
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More information