EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

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1 EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

2 Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ=

3 And the number is? ?

4 Quiz 3 (solution) Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= I G = V V GS T W V = < L 2 W 2 μc ( V V ) ( + λv ) V V V V V 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T OX GS T DS GS T DS GS T Cutoff Triode Saturation Guess Saturation: W I = μc V V 2L ( ) 2 D OX GS T V V V > V V GS T DS GS T

5 Quiz 3 (solution) Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= Guess Saturation: W I = μc ( V V ) 2 D OX GS T 2L V V V > V V GS T DS GS T u I = 2 D 2 2u I D ( ) 4 2 = 25. ma 2V V 7V > 2V V

6 Review from Last Time: n-channel MOSFET Operation and Model V DS V GS I D V BS I B I G (V BS small) Saturation region of operation Inversion layer disappears near drain Saturation first occurs when V DS =V GS -V T I D =? I G = I B =

7 Review from Last Time: Transistor Size Comparison with 24AWG Copper Cable (Drawn to scale) State of Art transistor dimensions about 2 times smaller (lateral) than μ fiber The gates of about 4 transistors can be placed on the cross-section of this fiber (maybe only 4 transistors)

8 Review from Last Time: MOS Transistors I= G Standard square-law model V <V GS T μ C W V L 2 2L n OX DS I= V -V V V V V V -V D GS T DS GS T DS GS T μ C W 2 n OX ( V ) ( ) GS -V T +λv DS V GS V T V DS > V GS -V T μ C n OX λ. V T W/L V -4 A V.5V to 3V varies by design 2

9 Review from Last Time: MOS Transistors p-channel MOSFET I= G Standard square-law model V <V GS T μ C W V L 2 2L p OX DS I= V -V V V V V V -V D GS T DS GS T DS GS T μ C W 2 p OX ( V ) ( ) GS -V T +λv DS V GS V T V DS < V GS -V T V T < I D V DS

10 Review from Last Time: MOS Transistor Models simplifications I= G I= V <V D GS T V = V V DS GS T Equivalent Circuit Models D D D S S G GS T GS T S

11 Review from Last Time: MOS Transistor Models simplifications V DS I= G I= V > V D GS T V = V V DS GS T I D Equivalent Circuit Models

12 Review from Last Time: MOS Transistor Models simplifications I= G V <V GS T I= D V DS V V GS T RFET R FET L V -V μc W GS T OX Better Switch-level dc model good enough for predicting basic operation of many digital circuits and can be used to predict speed performance if parasitic capacitances are added

13 Review from Last Time: MOS Transistor Models Voltage Variable Resistor (VVR) operation D V CONT FET S R FET L V -V μc W GS T OX Analog application of MOSFET in triode region

14 Review from Last Time: Voltage Variable Resistor R 2 A =+ V R R2 A=+ V R Applications include Automatic Gain Control (AGC) R FET FET L V -V μc W GS T OX

15 MOS Transistor Models simplifications I D V GS6 V GS5 V GS4 V GS3 V GS2 I= G μc W 2L 2 ( ) ( ) OX I= V -V +λv D GS T DS Can often assume λ= Saturation V GS V DS Saturation Region Model used for many analog applications

16 MOS Transistor Models simplifications I= G μc W 2 ( ) 2L Saturation OX I= V -V D GS T With λ= Saturation Region Model good enough for many analog applications

17 MOS Transistor Models simplifications μc W OX V GS -V T +λv DS 2L 2 ( ) ( ) Saturation Region Model good enough for many analog applications

18 MOS Transistor Models (Summary)

19 MOS Transistor Models (Summary) μc W OX V -V +λv 2L ( 2 ) ( ) GS T DS D V CONT FET S

20 MOS Transistor Applications (Digital Circuits) Assume ~ V H = V DD > V T Assume ~ V L = V < V T MOSFET Model I= G I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5

21 MOS Transistor Applications (Digital Circuits) R V DD Assume ~ V H = V DD > V T Assume ~ V L = V < V T X M I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ X= V DD, V DS = V so = V ~ If ~ X= V, I D = A so =V DD -I D R = V DD ~ So this circuit performs as a Boolean inverter Assume ~ V L < V T Assume ~ V H > V T X Truth Table

22 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A B 2 MOSFET Model I= G I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5

23 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A B 2 I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so = V ~ If ~ A= V DD, ~ B= V V, DS = V (and I D2 =A) so = V ~ If ~ A= V, ~ B= V DD, V DS2 = V (and I D =A) so = V ~ If ~ A= V, ~ B= V, I D2 = A and I D =A so I R =A, thus = V DD = I R R=V DD ~

24 A B MOS Transistor Applications (Digital Circuits) R V DD 2 A B Truth Table If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so = V ~ If ~ A= V DD, ~ B= V, V DS = V (and I D2 =A) so = V ~ If ~ A= V, ~ B= V DD, V DS2 = V (and I D =A) so = V ~ If ~ A= V, ~ B= V, I D2 = A and I D =A so I R =A, thus = V DD = I R R=V DD ~ 2-input NOR Gate

25 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A M B M 2 I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so =V ~ If ~ A= V DD, If ~ A= V, If ~ A= V, ~ B= V V, DS = V and I D2 =A so I R =A thus =V DD -I R R= V DD ~ ~ B= V V DD, DS2 = V and I D =A so I R =A thus =V DD -I R R= V DD ~ ~ B= V, I D = A and I D2 =A so I R =A thus =V DD -I R R= V DD ~

26 V DD R A M B M 2 MOS Transistor Applications (Digital Circuits) A B Truth Table If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so =V ~ If ~ A= V DD, If ~ A= V, If ~ A= V, ~ B= V V, DS = V and I D2 =A so I R =A thus =V DD -I R R= V DD ~ ~ B= V V DD, DS2 = V and I D =A so I R =A thus =V DD -I R R= V DD ~ ~ B= V I, D = A and I D2 =A so I R =A thus =V DD -I R R= V DD ~ 2-input NAND Gate

27 MOS Transistor Applications (Digital Circuits) V DD V DD R R A M A B 2 B M 2 A B A B Can be extended to arbitrary number of inputs But the resistor is not practically available in most processes and static power dissipation is too high

28 MOS Transistor Applications (Digital Circuits) DD X 2 Assume ~ V H = V DD Assume ~ V L = V MOSFET Models

29 MOS Transistor Applications (Digital Circuits) DD 2 Assume ~ V H = V DD X Assume ~ V L = V MOSFET Models Assume V T ~V DD /5 n-channel device Assume V T2 ~ - V DD /5 p-channel device

30 MOS Transistor Applications (Digital Circuits) DD DD 2 2 X X ~ V H = V DD ~ V L = V If X=V DD, then V GS =V DD >V T, V GS2 = > V T2 S closed, S 2 open = V~

31 MOS Transistor Applications (Digital Circuits) DD DD 2 2 X X ~ V H = V DD ~ V L = V If X=V, then V GS =V<V T, V GS2 =-V DD < V T2 S 2 closed, S open = V DD ~

32 MOS Transistor Applications (Digital Circuits) DD X X 2 Truth Table Performs as a digital inverter

33 MOS Transistor Applications (Digital Circuits) DD A 4 3 A B B 2 Truth Table Performs as a 2-input NOR Gate Can be easily extended to an n-input NOR Gate

34 MOS Transistor Applications (Digital Circuits) DD A B Truth Table Performs as a 2-input NAND Gate Can be easily extended to an n-input NAND Gate A B

35 MOS Transistor Applications (Digital Circuits) DD DD X M 2 A M 3 M 4 M M B M 2 Termed CMOS Logic Widely used in industry today (millions of transistors in many ICs using this logic Almost never used as discrete devices

36 Bipolar Transistor B: Base C: Collector E: Emitter

37 Bipolar Transistor npn pnp

38 Bipolar Transistor npn pnp p-type silicon n-type silicon

39 Vertical npn BJT Base Emitter Collector n+ buried collector implant Buried collector Vertical npn BJT

40 Lateral pnp BJT BE E C CB Lateral pnp BJT

41 Bipolar Transistor I C I B5 npn I B4 I B3 I B2 I B V CE

42 Bipolar Transistor C I C B I B V CE V BE E pnp

43 Bipolar Transistor C B E C npn CE

44 Bipolar Transistor C npn CE Most analog or linear applications based upon Forward Active region Most digital applications involve Saturation and Cutoff regions and switching between these regions as the Boolean value changes states

45 Bipolar and MOS Region Comparisons I C Saturation Forward Active V CE MOSFET BJT Cutoff Cutoff Saturation Triode Cutoff Forward Active Saturation

46 Bipolar Transistor I C I B5 I B4 I B3 I B2 I B V CE npn

47 Bipolar Transistor Multi-Region Model I βi V + = CE C B VAF JSA I B = β E e V BE V t V BE >.4V V BC < Forward Active V t = kt q V BE =.7V V CE =.2V I C <βi B Saturation I C =I B = V BE < V BC < Cutoff

48 Bipolar Transistor I C I B5 I B4 I B3 I B2 I B V CE npn C CE

49 Bipolar Transistor I C = βi JSA I B = β V t = kt q B E e V BE V t Simplifier Basic Multi-Region Model V BE >.4V V BC < Forward Active V BE =.7V V CE =.2V I C <βi B Saturation I C =I B = V BE < V BC < Cutoff

50 End of Lecture 3

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