DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:


 Benedict O’Neal’
 2 years ago
 Views:
Transcription
1 UNIT VII IASING & STAILIZATION AMPLIFIE:  A circuit that increases the amplitude of given signal is an amplifier  Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency at output. iasing a Transistor Amplifier.  Input signal is applied between base and emitter  Output is taken out between Collector and emitter. I CC 3.5mA Icmax 3mA AC load line 1.5mA DC load line 12V D VCE max 24V. DC LOAD LINE:  V CC V CE + I C L  24V V CE + 0. VCE Max V CE 24V  For Ic max, transistor is in saturation. V CE drop is 0.2V, Ideally V CE 0 V CC V CE + I CC V CC 0 + I C C VCC or I cmax 24/8k 3mA C V CE 1
2 Optimum operating point point is called Quiescent point V 12Volts 2 IC max mA 2 θ CE max 24 VCEQ 2 I CQ VCE max 24 VCE Q 12volts 2 2 Ic max 3 ICQ 1.5mA 2 2 Ac load ac C L kΩ Max V CE V CE Q + IcQ ac (Point D) x 103 x 6 x volts Max collector current VCE φ 12V IcQ + 15mA 3.5 ma. ac 6k I C max 3.5mA (Point C) Line joining C & D is called ac load line. 1Q) Determine the quiescent current and collector to emitter voltage for germanium transistor with β 50 in selfbiasing arrangement draw the circuit with given component value V CC 20V, C 2K, E 100Ω, 2 5K (Also find out stability factor). (May 2005) Solution:  +20V For drawing DC load line we must know a) V CE max when Ic 0 b) Ic max when V CE 0 V CE max VC C 20V Quiescent V CE Q Quiescent I C Q V CE VCC 20 IC IE IC max 9.52mA max 20 10V 2 2 Ic max mA 2 2 C E 5K 2
3 I C φ 4.76 Quiescent I Q mA β 50 Quiescent I E Q I C Q + I Q 4.855mA. Q2) For transistor amplifier shown in the fig. L 1.5kΩ and V E 0.7V Solution: i) Draw DC load line ii) Determine operating point iii) Draw AC load line i) DC load line DC load line V CC V CE + I C ( C + E ) (I C I E ) V CEmax + V CC 12V VCC 12 Ic max 6mA K C E ( ) ii) iii) Operating Point Voltage across 2, 4K 2 V 2, VCC 12 4volts ( 8 + 4) K V2 V V 2 V E + I E E or C IE 3 E 1 10 I E V CC I C ( C + E ) x 103 (2 x 10 3 ) 5.4 volts Therefore operating point or quiescent point Q (5.4 V1 3.3mA) AC load line We should V CE max & I C max. C L AC load resistance ac C L 0.6kΩ C + L 2.5 V CE max V CE Q + IcQ. ac x 103 x 0.6 x Volts (Point C) VCE Q Ic max IcQ mA ac (Point D) 3
4 THEMAL UN AWAY:  Collector current I C βi + (β+1) I CO  β, I, I CO all increase with temperature  I CO doubles for every 10 C rise in temperature  Collector current causes junction temperature to rise, which in term rises  I CO rise in Ic.  This cumulative process leads to collector current to increase further and transistor may be destroyed.  This phenomenon is called thermal un away.  emedy:  1) To reduce base current with rise in temperature using NTC components  2) Making collector larger in size and using heat sink to dissipate heat.  STAILITY FACTO (S)  The extent to which the collector current I C is stabilized with varying Ico is measured by stability factor S.  It is defined as the rate of change of collector current to the change in Ico, keeping I and as constant.  IC dic S, β & I Constant Or S ICO dico  Collector current Ic βi + (β+1) I CO  (1) Differencing eqn. (1) with repeat to Ic. dic dβ I d( β + 1) Ico dic dic dic di DICO 1 β + ( β + 1) dic dic di β β dic S β + 1 Or S di 1 β dic  S should be as small as possible to have better stability Stability Factor S and S. dic Ic S ', Ico & β constant dve VE dic Ic S ", Ico & VE dβ β constant Methods of Transistor iasing:  Types of iasing:  a) Fixed ias or base resistor ias b) Collector to ase bias or biasing with feet back resistor 4
5 c) Selfbias or emitter bias or potential divides ias. a) Fixed ias: y DC analysis V I + V  (1) CC. E V V CC E I  (2) 1+ β Stability Factor S di 1 β dic Since I is not depending on Ic as per equation (2). 1+ β S 1+ β  (3) 1 β (0) Since β is a large quality and varies from device to device. This is very poor circuit for stability for bias. Advantages of fixed ias:  a) Simple circuit b) Small number of components c) If V CC is very large, compared to V E then (as per equation 2) I is independent of V E. COLLECTO TO ASE IAS:  I  V CE I + V E VCE  V E 5
6  If the collector current increases due to increase in temperature or the transistor is replaced by one with higher β, the voltage drop across C increases.  So, less V CE and less I, to compensate increase in Ic i.e., greater stability ( ) V I + I + I + V  (1) CC C C E IC + ICC + I + VE I + + I + V ( ) C C C E V V I C + di C d + CC E C C Or I IC C Stability Factor: 1+ β S di 1 β dic Putting the value of di / di C from equation (3) 1+ β 1+ β S C C 1 β 1+ β C + C +  (2)  (3) Note:  1) Value of S is less than that of fixed bias (which is S 1+β) 1) S can be made small and stability improved by making small or C large.  If c is small S 1 + β, i.e., stability is port This collector to base bias is not satisfactory for transformer coupled amplifier.  6
7 Self bias or Potential Divider ias:   equired base bias is obtained from the power supply through potential divider 1 & 2.  In this circuit voltage across everse biases base emitter junction. Whenever there is increase in this collector circuit voltage across E increases causing base current to diverse which compensate the increase in collector current.  This circuit can be used with low collector resistance. 2Vcc V y applying thevenins theorem, the cut can be replaced and Equivalent Circuit:  Writing loop equation for the basic loop shown I C E I + V E + E (I +I C ) I + V E + I E + I C E I ( + E ) + V E + I C E Or I ( + E ) V V E  I C E Or di E di + c E Differencing wrt. Ic, di dv dve di + E di di di di ( ) C E C C C C di Or ( + ) 0 0 di  (1) c E E Stability Factor 7
8 1+ β S di 1 β dic DI Putting the value of from equation (1) DIC 1+ β 1+ β 1+ β S E E + + β 1 β 1+ β + E + E + E E E Dividing N & D by E + E ( 1+ β ) 1+ E E S (1 + β ) (2) + E + β E 1+ β + If E E β 0, S (1 + β ) β ( β ) β + If, S ( 1+ β ) ( 1+ β ) E E (3) So, (a) for smaller value of stability is better, but large power will be wasted in 1 & 2. S is independent of. (b) For fixed /E, S increases with β (see eqn. 2) i.e., stability decreases with increase in β. ias compensation a) Diode bias compensation I I D + I (I D is reverse saturation Current increases with temp.) When temperature increases, I C increases at the time, I D also increases, making I to educe and controlling I C. 8
9 b) Thermistor ias compensation:   T is having negative temp. Coefficient i.e., temperature T.T  When temperature increases T decreases thereby reducing base bias voltage & base current and hence collect to current. c) Sensistor ias compensation.  s is sensistor (resistance) having positive temperature coefficient.  When temp. s. V 2 iasing of FET Source selfias circuit: ase bias voltage ase current. Collector current controlled. This configuration can be used to bias JFET pr depletion mode MOS FET.  Voltage across S is used to reverse bias the gate as voltage across E is used for selfbias of C E amplifier.  elation of drain current, V GS, Vp is given by I DS I DSS (1 V GS /V P ) 2.  Since gate current in negligible, source resistance can be VGS found as S I D  9
10 iasing against device variation:  V GS V GG I DS. (Gate current is very small & V G is small)  V GS is always negative  There may be a change in the drain current I d, when even a device is changed  If a device change results in increase in I d, it leads to more voltage drop across S and V GS increases. So, I d will be reduced.  In this way the circuit takes care of device variations. FET as a voltage variable esistor:  ID  When V DS < V P V GS 0V Id α V DS, when V GS is constant. V GS 1V i.e., FET acts as a resistance. V GS 2V  In this region FET is used as a V GS 3V Voltage controlled resistor. Or Voltage variable resistor. Or Voltage dependant resistor. 0 V P V DS Application:  There many applications. Automatic gain control of F amplifier of a receiver is one of the applications. 10
11  FET is biased in such a way that when transistors conducts more, then the resistance offered by FET is more.  The causes more reverse bias to emitter base junction of transistor and it conducts less.  In this way Automatic gain control (AGS) is achieved. Q) Find out stability factor of the circuit given below: (May 2005) Stability factor of selfbiased Circuit given by: E E S ( 1+ β ) 1+ β + E k k Ω S ( ) Q2) For the circuit shown, determine the value of Ic and VCE. Assume VE 0.7V and β 100 (Sep.06) V V. 10 5k k 15 cc 2 in 1 2 ( ) th k k 3.33 k volts V th I + V E + I E E I + V E + (β+1)i E V th V E I ( +(β + 1) E ) V Or th VE I + β + 1 ( ) E 11
12 K I µ A I β. I 4888 µ A. C I I + I µ A E C Part (b) V CE? V CC I C C + V CE + I E E Or V CE V CC I C C I E E x 106 x x 106 x volts I C 4.89 ma V CE 2.64 Volts Q3) For the JFET shown in the circuit with the voltage divides bias as shown below. Calculate V G, V S, V D and V DS if V GS 2V. (Sep. 2006) Solution: VG V. 15 4k k 4 DD ( ) 3.75V Since gate circuit is negligible Voltage drop across G 0 V GS V G I d s.  2 V I d S I d S V Vs. Id 5.75/1k 5.75mA. Voltage drop across L I D x 103 x V V DS V DD I D 2 I D S volts V D V DD I D L V. 3Q) For the circuit shown, calculate V E, I E, Ic and Vc. Assume V E 0.7V. (Sep. 2006) Solution: V V E + V E or V E V V E V VE 3.3 I E 1mA 3.3k E 12
13 Since β is not given, assume Ic I E 1mA. V C V CC I C L 10 1 x 103 x 4.7 x volts 4 Q) In the circuit shown, if I C 2mA and V CE 3V, calculate 1 & 3 Solution: Ic 2mA I 0.02mA β 100 I I + I mA E C V I 2.02mA volts E E E V 2 VE + VE volts V I 0.161mA 2 10k V 1 V CC V volts V kΩ I + I ma ( ) V 3 V CC V E V CE ; V CE 3V V volts V k I 2mA Ω C (Sep. 2006) 5Q) Design a selfbias circuit for the following specifications. VCC 12V, VCE 2V, I C 4mA, h fc 80. (Sep. 2006) Solution: C I I 4mA / mA β I E I C + I ma Let V 4V. 2 4k and 1 8K k k 2667Ω V I + V E + V E Or V E V I V E x 103 x volts VE E 7.82 I E 4.05mA Ω V CC V C + V CE + V E (O) V C V CC V CE  V E volts 13
14 VC c I C ma 1708Ω. 1 8k, 2 4k, c 1708Ω and c 782. ut resistor of 1708Ω and 782Ω are not available commercially. We have to choose commercially available resistors, which are nearest to these values. Numerical of Unit III Question ank 1 Q) A volts (rms) ideal transformer is used with a FW with diodes having fwd drop of 1 volt. The load resistance in 100Ω and capacitor of 10,000 µf is used on filter. Calculate the Dc load current and voltage. (JNTU 2005) Solution:  I DC VDC Vm where f is power line frequency. C in farads. 4 fc Vrms 15V, Assume voltage drop (rms) across diode as 1V. Vrms across load 14V Idc 4170 Idc V dc V m C 10, I ; 19.8 (or) I ; Amp dc dc V 19.8 Volts. dc Vm Vrms volts. 2 Q) A FW is used to supply power to a 2000Ω load, choke of 20H and capacitor of 16µf are available. Compute ripple factor using filter 1 (i) one inductor (ii) one capacitor (iii) single L type. Solution: L 2000Ω; C 16µf; L 20H. i) One Inductor Filter L r L (ii) One capacitor filter: r CL (iii) Single LC Type Filter 14
15 r LC (iv) π Selection r CC1L1 L Filter in the Order of Merit: a) Capacitor Filter (b) Inductor Filter c) L Section (d) π Section. 3 Q) Design a full wave rectifier with an LC filter to provide 9V DC at 100mA with a max ripple of 2%. Given line frequency f 60Hz. (JNTU 2000) Solution:  Given V DC 9V, f 60Hz. I L 100mA, r 2% 0.02 To find: L, C. r 0.83 when f 60 Hz. (1) (1) Else r wc 2 wl. Where L C L / Or 0.83 LC 41.5 (2) 0.02 Critical Inductance (value of Inductance for which diode conducts continuously) L VDC 9 L C.; L I DC 100mA Lc (2) 41.5 C µ f Transformer rating Vrms? Diode ratings Piv Vm current rating load current L 796mH C 521µf 4 Q) A FW operating at 50 Hz i.e., to provide DC current of 50mA at 30V with a 80µf, C type filter. Calculate (i) V m the peak secondary voltage of the transformer (ii) atio of surge to mean currents of diode (iii) The ripple factor of the output. (JNTU 2002) 15
16 Solution:  Given f 50 Hz, C 80µf I DC 50mA To find V m? ratio of surge to mean current V DC 30V. Part (i) V m? V DC V m. Or V m V DC / / volts. Part ii atio of surge to mean current X X Surge Current It is the current flowing through the diode, when the power supply is just switched on i.e., at time t 0+. At time t 0+. Voltage across capacitor will be zero X X X V V S C Current through the diode at any time d + S VS max Vm When Vc 0, Id will be max d + S d + S This is called surge current. VS Vdc Mean diode current Id + d V ( d + m s ) atio of surge current to mean current ( ) V m V m V DC S + V V d s m dc Note: Designer must cater for 3 times the required average current. Part III : 2410 ipple factor r CL f 60 Hz. Or 1 ipple factor r 4 3 fcl Vdc 300V 2 L 30V Idc 50mA r
17 5 Q) For a FW circuit AC voltage input to transformer primary is 115V. Transformer secondary voltage is 50V, L 25Ω. Determine i) Peak DC component, MS and AC component of load voltage ii) Peak DC component, MS and AC component of load current. (June 2002) Solution: Given Vrms 50V, to find V m, V r, I m, I r. V L 25Ω Vm Vdc r 2 Part (i) Vm Vms orvm 2; Vms 2, Volts V V r 2 r, r of FW (without filter) 0.48 Vdc V dc V m 0.637x volts Vr γ, Vdc 0.48 x volts Peak DC component VDC + ipple voltage volts γ peak 66.6 V rms 47 Volts 2 2 Part II Vm 70.7 Im Amps. 25 L Vr 21.6 Ir Amps. L 25 Peak DC current component 66.6/ Amps. uns DC current component 47/ Amps. 6 Q) Calculate ripple factor of capacitor filter with peak rectified voltage of 20V and C 50 µf and I DC 50mA. (June 2004) Solution:  Vm 20V, Idc 50mA, C 50µf. V DC Vm 20V V DC Idc Vm 4 fc Suppose f 50Hz, Then V DC V r
18 volts 200 VDC L 300Ω Idc 50mA r 4 3 fc L Photo Transistor: Phototransistor is a JT for which no base bias is given. When light falls on the junction base current flows and transistor conducts. Ic(mA) Symbol ase 3.0 current H 1.25 mw/cm 2 I µa Vcc(V)  Collector current does not vary much with Vcc  Collector current increases with light intensity. adiation flux Density H(mw/in 2 ) Advantages of photo diode.  Will produce I C much higher (β times) I C (by photo diode) Applications: Capt. isolators are used to isolate input source and load i.e., high isolation logic gates etc., 18
19 Numerical of Question ank Unit IV 1 Q) In a C connection current amplification factor is 0.9. If emitter current is 1mA, determine the value of base current. Given α 0.9 I? I E 1 ma. Solution: α Ic/IE or IC α. I E 0.9 x 1 0.9mA I I E Ic ma. 2 Q) For a transistor collector current is 20mA and current gain factor is 50. Determine emitter current. (May 2000) Given Ic 20mA IE? β 50 Solution: Ic Ic 20 β Or I ma 0.4 ma. I β 50 IE I C + I ma. 3 Q) In a transistor collector current is 0.98 ma and base current is 20µA. Determine the value of i) Emitter current (ii) Current amplification factor iii) Current gain factor (May 2000) Given I C 0.98mA To find: I E? I 20µA β? α? Solution:  I E Ic + I 0.98 ma + 20µA 980µA + 20µA 1000µA Ic 980 β µ A 49 I 20 Ic 980 α µ A 0.98 IE Q) A JT has I 10µA, α 0.99 and I co 1µA. What is the collector current. Solution: Ic βi + (β + 1) Ico; α β 99 1 α Ic (99 x x 1)µA µA 1.09 ma. 19
20 5 Q) The readings obtained from a JFET are as follows:  Drain to source voltage (volts) Gate to source voltage (volts) Drain current Id (ma) Determine (i) AC drain resistance (ii) Trans. Conductance (iii) Amplification Factor SOLUTION: (i) VDS Ac Drain esistance d / VGS constant V GS constant ID 12 5( Volts) ( ma) kΩ (ii) Trans conductance Id gm VGS VDS constant mA 70 m 0 ( 0.25) m (iii) Amplification factor µ g m. d 2.8 x 103 x Q) An SC is used as a switch to supply an inductive load of L 20H and negligible resistance from a DC source of 100V. If the latching current of SC is 100mA, find the min. pulse width of trigger pulse. i Solution: V VSC + VL + V VSC 0 + VL + 0 di V L VL 20 dt. L dt di 100V V Integrating both sides V 0Ω L 20 3 t. i sec. V 100 Minimum pulse width required is 0.02 sec. 20
21 NUMEICAL OF QUESTION ANK. 1 Q) An NPN transistor used in selfbias CE amplifier has a value of β 49 at temperature of 25 c. The circuit has 1 90kΩ. Vcc and c are adjusted to establish Ic 2mA. Calculate stability factor. (JNTU 2001) Solution: Stability factor S E 1+ β + E ( β ) β & E are given: k; k E 1k 1 2 ( )( ) ( + + ) S Q) In the selfbiased CE amplifier c 4kΩ, 1 90kΩ, 2 10kΩ, 45 and VE 0.6V. Compute stability factor for E (i)1kω (ii) 1.5KΩ (iii) 1.8kΩ. (Dec. 2003) Solution:  ( 1+ β ) 1+ E Stability factor of selfbias circuit S 1+ β + E Given, β 45, E k Case (i) Case (ii) Case (iii) 1 2 ( + )( + ) E 1KΩ S E 1 K 9k ( 1+ 45)( 1+ 6) E 1.5 k, 6 S 6.19 KE 1.5 k k ( 1+ 45)( 1+ 5) E 1.8 k, 5 S 5.41 E 1.8 k
22 IAS CONPENSATION: 1 Q) Explain ias compensation using sensistors. Ic (β + 1) ICO + βi. For correct operation of transistor as an amplifier collector current should be independent of temperature variations. ut when temperature increases ICO increases. So to keep the collector current Ic constant, we must reduce current I to compensate increase in ICO. The technique used is called ias compensation. +VCE 1. Sensistor compensation 1 s E As shown in the diagram s can be Connected across s (or it can be Connected across E). 2 E Sensistor (s) in a positive temperature Coefficient resistance i.e., value of s increases with rise in temperature. So, when temperature increases resistance offered by s (sensistor) increases. So, parallel combination of s and 1 with also offer more resistance. More voltage will be dropped across than and less voltage is applied to base. This reduces the base emitter bias voltage resulting in reduction of base current. In this way sensistor reduces the base current to compensate increase in ICO due to rise in temperature. 1 b) In the circuit shown, if Ic 2mA and VCE 3V, calculate 1 and 3. (May 07, Aug. 06, 07) + Vcc 15V Solution: 1 3 I+I Ic I 2 10kΩ 4 500Ω 22
23 3 Ic 2 10 I 0.02mA β 100 IE Ic + I mA VE IC E 2.02mA x volts V2 VE + VE volts V I ma 10k 2 V1 VCC V volts V K I + I ma ( ) V3 VCC VE VCE volts V k Ic 2mA Ω 1 c) Compare JT, JFET and MOS FET in all respects. (Aug 06, 07) S.No. JT JFET MOS FET 1 Types NPN, PNP, ipolar Nch JET, Pch Enhancement & JFET, Unipolar depletion type, Unipolar 2 Current oth majority Only majority Only majority charge &minority charge charge carriers are carriers are used. carriers are used used 3 Input impedance Low (kω) High (100 MΩ) Very high (10 15 Ω) 4 Control Current controlled Voltage controlled Voltage controlled device input current device. Input device. controls output voltage controls current output current 5 Fabrication Difficult Easy Easy 6 Handling Easy No, preached Easy Difficult, special required precautions to be taken 7 Power High Low Very low Dissipation 8 Lifetime Less More Less 9 Switching speed Less High High 4 Q) Explain in detail about Thermal runaway and Thermal resistance. (May 07) Thermal un away: 23
24 Ic βi + (β+1) Ico. Leakage current Ico increases with temperature and β also increases with rise in temperature. Ico doubles with every 10 c rise in temperature. Therefore collector current also increases with temperature. More collectors current in turn will give rise to more temperature at the junction. This problem of selfheating is called Thermal run away and may result in damaging the transistor. Thermal esistance (P 288 MMH) The steady state temperature rise at the collector junction is proportional to the power dissipated at the junction. T T J T A k P D Where T rise in temperature T J Temperature at junction T A Ambient temperature P D Power dissipated K Proportionality constant, called Thermal resistance. The value of Thermal resistance depends on size of transistor, on convection or radiation to the surroundings, on forced air cooling and on Thermal connection of the device to metallic chassis or heat sink. The value of Thermal resistance varies from 0.2 c/w for a high power transistor with efficient heat sink to 1000 c / w for a low power transistor in free air. 4 b) Q) For the circuit shown in figure, determine I E, V C and V CE. Assume VE 0.7V. (May 2007) V EE  8V Si c 1.8kΩ V CC 10V β
Chapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationS.E. Sem. III [ETRX] Electronic Circuits and Design I
S.E. Sem. [ETRX] Electronic ircuits and Design Time : 3 Hrs.] Prelim Paper Solution [Marks : 80 Q.1(a) What happens when diode is operated at high frequency? [5] Ans.: Diode High Frequency Model : This
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: Email: info@madeeasy.in Ph: 04546 CLASS TEST 089 ELECTCAL ENGNEENG Subject
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationCHAPTER 7  CD COMPANION
Chapter 7  CD companion 1 CHAPTER 7  CD COMPANION CD7.2 Biasing of SingleStage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and fieldeffect
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationChapter 13 Bipolar Junction Transistors
Chapter 3 ipolar Junction Transistors Goal. ipolar Junction Transistor Operation in amplifier circuits. 2. Loadline Analysis & Nonlinear Distortion. 3. Largesignal equialent circuits to analyze JT circuits.
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationCHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012
1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET DFET (Depletion MOS) MOSFET (Enhancement EFET) DC biasing Small signal
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9  JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a threeterminal
More informationassess the biasing requirements for transistor amplifiers
1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the opamp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationELECTRONICS IA 2017 SCHEME
ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationScheme I SAMPLE QUESTION PAPER I
SAMPLE QUESTION PAPER I Marks : 70 Time: 3 Hours Q.1) A) Attempt any FIVE of the following. a) Define active components. b) List different types of resistors. c) Describe method to test following passive
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationChapter7. FET Biasing
Chapter7. J configurations Fixed biasing Self biasing & Common Gate Voltage divider MOS configurations Depletiontype Enhancementtype JFET: Fixed Biasing Example 7.1: As shown in the figure, it is the
More informationEC/EE DIGITAL ELECTRONICS
EC/EE 214(R15) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER 2016 First Semester EC/EE DIGITAL ELECTRONICS Time: Three Hours 1. a) Define Encoder Answer
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: nchannel MOSFET Source Gate L Drain W L EFF Poly Gate oxide nactive psub depletion region (electrically
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationMMIX4B22N300 V CES. = 3000V = 22A V CE(sat) 2.7V I C90
Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C
More informationUNIJUNCTION TRANSISTOR
UNIJUNCTION TRANSISTOR The UJT as the name implies, is characterized by a single pn junction. It exhibits negative resistance characteristic that makes it useful in oscillator circuits. The symbol for
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationChapter 4 FieldEffect Transistors
Chapter 4 FieldEffect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 41 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and SelfHeating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and SelfHeating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More information5. EXPERIMENT 5. JFET NOISE MEASURE MENTS
5. EXPERIMENT 5. JFET NOISE MEASURE MENTS 5.1 Object The objects of this experiment are to measure the spectral density of the noise current output of a JFET, to compare the measured spectral density
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIBR T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIBR T7 Session 089 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationTransistors. Lesson #9 Chapter 4. BME 372 Electronics I J.Schesser
Transistors Lesson #9 hapter 4 252 JT egions of Operation 7.03 6.03 5.03 4.03 3.03 2.03 1.03 0.00 Saturation Active i amps i =50 ma 40 ma 30 ma 20 ma 10 ma 0 ma 0 1 2 3 4 5 6 7 8 9 10 v volts utoff There
More informationECE342 Test 3: Nov 30, :008:00, Closed Book. Name : Solution
ECE342 Test 3: Nov 30, 2010 6:008:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationECE342 Test 2 Solutions, Nov 4, :008:00pm, Closed Book (one page of notes allowed)
ECE342 Test 2 Solutions, Nov 4, 2008 6:008:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationChapter 31 Electromagnetic Oscillations and Alternating Current LC Oscillations, Qualitatively
Chapter 3 Electromagnetic Oscillations and Alternating Current LC Oscillations, Qualitatively In the LC circuit the charge, current, and potential difference vary sinusoidally (with period T and angular
More informationL4970A 10A SWITCHING REGULATOR
L4970A 10A SWITCHING REGULATOR 10A OUTPUT CURRENT.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90 DUTY CYCLE RANGE INTERNAL FEEDFORWARD LINE REGULA TION INTERNAL CURRENT LIMITING PRECISE.1 ± 2 ON CHIP REFERENCE
More informationECE2262 Electric Circuits. Chapter 6: Capacitance and Inductance
ECE2262 Electric Circuits Chapter 6: Capacitance and Inductance Capacitors Inductors Capacitor and Inductor Combinations OpAmp Integrator and OpAmp Differentiator 1 CAPACITANCE AND INDUCTANCE Introduces
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationForwardActive Terminal Currents
ForwardActive Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th  e W (why minus sign? is by def.
More informationMicroelectronic Circuit Design 4th Edition Errata  Updated 4/4/14
Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: 1.35 x 10 6 cm/s Page 58, last exercise,
More informationEE 330. Lecture 35. Parasitic Capacitances in MOS Devices
EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A  β β VXX Q 2
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πmosⅦ) TK6A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πmosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drainsource ONresistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationChapter 9: Controller design
Chapter 9. Controller Design 9.1. Introduction 9.2. Effect of negative feedback on the network transfer functions 9.2.1. Feedback reduces the transfer function from disturbances to the output 9.2.2. Feedback
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I curve (SquareLaw Model)
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationII/IV B.Tech (Regular/Supplementary) DEGREE EXAMINATION. Answer ONE question from each unit.
14ECEI302/EC 212 1. Answer all questions (1X12=12 Marks) a What are the applications of linked list? b Compare singly linked list and doubly linked list. c Define ADT. d What are the basic operations of
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationMICROELECTRONIC CIRCUIT DESIGN Second Edition
MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113
More informationCS 436 HCI Technology Basic Electricity/Electronics Review
CS 436 HCI Technology Basic Electricity/Electronics Review *Copyright 19972008, Perry R. Cook, Princeton University August 27, 2008 1 Basic Quantities and Units 1.1 Charge Number of electrons or units
More informationWhereas the diode was a 1junction device, the transistor contains two junctions. This leads to two possibilities:
Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: ntype (favor e), ptype (favor holes) for conduction Whereas the diode was a junction
More informationAbsolute Maximum Ratings Parameter Max. Units
PD  97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More informationChapter 11 AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode
Chapter 11 AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode Introduction 11.1. DCM Averaged Switch Model 11.2. SmallSignal AC Modeling of the DCM Switch Network 11.3. HighFrequency
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for nonideal transistor behavior Incremental output port resistance Incremental changes
More informationKDG25R12KE3. Symbol Description Value Units V CES CollectorEmitter Blocking Voltage 1200 V V GES GateEmitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More informationSolved Problems. Electric Circuits & Components. 11 Write the KVL equation for the circuit shown.
Solved Problems Electric Circuits & Components 11 Write the KVL equation for the circuit shown. 12 Write the KCL equation for the principal node shown. 12A In the DC circuit given in Fig. 1, find (i)
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More informationTPC8116H TPC8116H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
TOSHIBA Field Effect Transistor Silicon PChannel MOS Type (UltraHighSpeed UMOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationCM75MX12A. NXSeries CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 972 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(5253) R S T (2) (56) (9) ConvDi 52 5 5 49 48
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationChapter 3. SteadyState Equivalent Circuit Modeling, Losses, and Efficiency
Chapter 3. SteadyState Equivalent Circuit Modeling, Losses, and Efficiency 3.1. The dc transformer model 3.2. Inclusion of inductor copper loss 3.3. Construction of equivalent circuit model 3.4. How to
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationPS12038 Intellimod Module Application Specific IPM 25 Amperes/1200 Volts
D M SQ PINS G L A F H K E J D VV QQ PP C 24 2 9 6 3 9 7 8 7 4 2 8 RR (4 PLACES) B N P Q R S Y EE XX V T LL DD GG TT SS X 2 3 4 GG T C FF LABEL T C 6 DD GG GG U P 2 N 3 NC 4 U V 6 W TERMINAL CODE 9 GND
More informationSummary Notes ALTERNATING CURRENT AND VOLTAGE
HIGHER CIRCUIT THEORY Wheatstone Bridge Circuit Any method of measuring resistance using an ammeter or voltmeter necessarily involves some error unless the resistances of the meters themselves are taken
More informationChapter 6: FieldEffect Transistors
Chapter 6: FieldEffect Transistors slamic University of Gaza Dr. Talal Skaik FETs vs. BJTs Similarities: Amplifiers Switching devices mpedance matching circuits Differences: FETs are voltage controlled
More informationIRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. LeadFree. Benefits Benchmark
More informationI PUC ELECTRONICS MODEL QUESTION PAPER 1 ( For new syllabus 2013)
Max Mark: 70] I UC ELECTRONICS MODEL QUESTION AER  ( For new syllabus 0) [ Max Time : hrs 5 min Note: i. Question paper contains four parts. ii. arta is compulsory, artd contains two sub parts (a) problems
More informationInsulated Gate Bipolar Transistor (IGBT)
BUK8568A GENERAL DESCRIPTION QUICK REFERENCE DATA Fastswitching Nchannel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collectoremitter voltage 8 V
More informationAC Circuits Homework Set
Problem 1. In an oscillating LC circuit in which C=4.0 μf, the maximum potential difference across the capacitor during the oscillations is 1.50 V and the maximum current through the inductor is 50.0 ma.
More information