CE/CS Amplifier Response at High Frequencies
|
|
- Jody McCarthy
- 5 years ago
- Views:
Transcription
1 .. CE/CS Amplifier Response at High Frequencies INEL Manuel Toledo August 20, 2012 INEL Manuel Toledo CE/CS High Frequency Analysis 1/ 24
2 Outline.1 High Frequency Models.2 Simplified Method.3 Common-emitter.4 Miller Theorem.5 Unity Gain Frequency INEL Manuel Toledo CE/CS High Frequency Analysis 2/ 24
3 High Frequency Models G C gd r d D S C gs g m v gs S B C µ C r π v π C π g m v π r O E E small-signal incremental model PARASITIC CAPS LIMIT GAIN AT HIGH FREQS. INEL Manuel Toledo CE/CS High Frequency Analysis 3/ 24
4 CE High Frequency Model R TH B C µ C v S R B r π vπ C π g m v π R LL =R C R L R B =R 1 R 2 E INEL Manuel Toledo CE/CS High Frequency Analysis 4/ 24
5 Open-circuit time constant method.1 Replace all coupling and bypass caps by shorts.2 Select one parasitic cap; call it C H1.3 Replace all other parasitic caps by open circuits.4 Find resistance seen by C H1 ; call it R H1.5 High frequency pole associated with C H1 is 1 ω H1 = C H1 R H1.6 Repeat above steps for each parasitic cap.7 Find equivalent high frequency cutoff ω H = 1 n i=1 1 ω Hi INEL Manuel Toledo CE/CS High Frequency Analysis 5/ 24
6 Single-stage amplifier V CC R 1 R C C C2 R TH C C1 v S R 2 R E C E R L INEL Manuel Toledo CE/CS High Frequency Analysis 6/ 24
7 Single-stage amplifier R TH B C µ C v S R B r π vπ C π g m v π R LL =R C R L R B =R 1 R 2 E INEL Manuel Toledo CE/CS High Frequency Analysis 7/ 24
8 Resistance Seen by C π : Seen by C µ : R π = r π R B R TH i test R B R TH r π v π v test R µ g m v π R LL =R C R L INEL Manuel Toledo CE/CS High Frequency Analysis 8/ 24
9 R µ Resistance seen by C µ i test R B R TH r π v π v test R µ g m v π R LL =R C R L v π = i test (R B R TH r π ) INEL Manuel Toledo CE/CS High Frequency Analysis 9/ 24
10 R µ Applying KVL on the external loop yields v test = v π + (i test + g m v π )R LL = i test (R B R TH r π ) +(1 + g m (R B R TH r π ))i test R LL R µ = v test i test = R B R TH r π + R LL +g m (R B R TH r π )R LL INEL Manuel Toledo CE/CS High Frequency Analysis 10/ 24
11 Miller Theorem Y=sC i IN i OUT v in A m v out Assume that A m = v OUT v IN Use is negative and is independent of Y = sc. v OUT = A m v IN v IN = v OUT /A m INEL Manuel Toledo CE/CS High Frequency Analysis 11/ 24
12 Miller Theorem Input: i IN = Y (v IN v OUT ) = sc(1 A m )v IN = sc IN v IN i.e. from the input C looks like a bigger capacitor C(1 A m ). Output: i OUT = Y (v OUT v IN ) = sc(1 1 A m )v OUT = sc OUT v OUT i.e. from the output C looks like a capacitor C(1 1 A m ) C. INEL Manuel Toledo CE/CS High Frequency Analysis 12/ 24
13 Miller Theorem v IN C IN A m v OUT C OUT INEL Manuel Toledo CE/CS High Frequency Analysis 13/ 24
14 Miller Theorem To apply Miller s Theorem, make sure that A m is negative A m is real, i.e. load is resistive INEL Manuel Toledo CE/CS High Frequency Analysis 14/ 24
15 Unity-gain frequency: f t f t : frequency at which the transistor s β = 1. i c C µ i b i b Z b r π vπ C π g m v π i c INEL Manuel Toledo CE/CS High Frequency Analysis 15/ 24
16 Unity-gain frequency: f t i c = g m v π v π sc µ Z b = r π = = v π = i b Z b 1 1 sc π 1 1 sc µ r π + sc π + sc µ r π 1 + sr π (C π + C µ ) INEL Manuel Toledo CE/CS High Frequency Analysis 16/ 24
17 Unity-gain frequency: f t Midband β β 0 = g m r π β has a pole at β(s) = i c = ω β = i b g m r π sr π C µ 1 + sr π (C π + C µ ) β sr π (C π + C µ ) 1 r π (C π + C µ ) INEL Manuel Toledo CE/CS High Frequency Analysis 17/ 24
18 Unity-gain frequency: f t f t : f at which β(s) = 1 β 2 0 = 1 + ω2 t ω 2 β ω t = ω β β β 0ω β Data sheet often specifies f t and C µ ; C π can then be found from above equations. INEL Manuel Toledo CE/CS High Frequency Analysis 18/ 24
19 Example A common-source amplifier is constructed with a 10µF bypass capacitor in parallel with a 1kΩ resistor, both connected to the FET s source terminal. The equivalent resistance seen by the bypass capacitor is 100Ω. At high frequencies there is a single pole located at 1MHz. If the amplifier s midband gain is 80dB, find an expression for the amplifer s gain as a function of the complex frequency s, valid for low-, mid- and high-frequencies. INEL Manuel Toledo CE/CS High Frequency Analysis 19/ 24
20 A common-source amplifier is constructed with a 10µF bypass capacitor in parallel with a 1kΩ resistor, both connected to the FET s source terminal. The equivalent resistance seen by the bypass capacitor is 100Ω. At high frequencies there is a single pole located at 1MHz. If the amplifier s midband gain is 80dB, find an expression for the amplifer s gain as a function of the complex frequency s, valid for low-, mid- and high-frequencies. ANSWER: A v (s) = 10 4 s s s 2π INEL Manuel Toledo CE/CS High Frequency Analysis 20/ 24
21 Example For the circuit shown below, find (i) the pole frequency applying Miller s theorem; (ii) the pole frequency using the open-circuit time constant method; and (iii) an expression for the voltage gain A v (s) = v OUT v S as a function of complex frequency s, valid for midand high-frequencies. 10k C 1 =10-11 F 1k v S 5k - v v 1 1k + v OUT - INEL Manuel Toledo CE/CS High Frequency Analysis 21/ 24
22 Example For the circuit shown below, find (i) the pole frequency applying Miller s theorem; (ii) the pole frequency using the open-circuit time constant method; and (iii) an expression for the voltage gain A v (s) = v OUT v S as a function of complex frequency s, valid for midand high-frequencies. 10k C 1 =10-11 F 1k v S 5k - v v 1 1k + v OUT - ANSWER: (i) 297krps; (ii) 297krps (iii) A v (s) = s 297krps +1 INEL Manuel Toledo CE/CS High Frequency Analysis 22/ 24
23 Prob A CS amplifier is specified to have g m = 5mA/V, r o = 40kΩ, C gs = 2pF, C gd = 0.1pF, C L = 1pF, R sig = 20kΩ, and R L = 40kΩ. (a) Find the low-frequency gain A M and use open-circuit time constants to estimate the 3-dB frequency f H. Hence determine the gain-bandwidth product. (b) If a 500Ω resistance is connected in the source lead, find the new values of A M, f H, and the gain-bandwidth product. Assume g mb = 1mA/V. INEL Manuel Toledo CE/CS High Frequency Analysis 23/ 24
24 Prob INEL Manuel Toledo CE/CS High Frequency Analysis 24/ 24
Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationChapter 9 Frequency Response. PART C: High Frequency Response
Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cut-off frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution
ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 =
ECE 3050A, Spring 2004 Page Problem (20 points This problem must be attempted) The simplified schematic of a feedback amplifier is shown. Assume that all transistors are matched and g m ma/v and r ds.
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION
ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationExact Analysis of a Common-Source MOSFET Amplifier
Exact Analysis of a Common-Source MOSFET Amplifier Consider the common-source MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel
More informationESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model
Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1
More informationECE 255, Frequency Response
ECE 255, Frequency Response 19 April 2018 1 Introduction In this lecture, we address the frequency response of amplifiers. This was touched upon briefly in our previous lecture in Section 7.5 of the textbook.
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller
More informationElectronics II. Midterm II
The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)
More informationElectronics II. Final Examination
The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OP-AMP It consists of two stages: First
More informationECE 342 Electronic Circuits. Lecture 25 Frequency Response of CG, CB,SF and EF
ECE 342 Electronic Circuits ecture 25 Frequency esponse of CG, CB,SF and EF Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 342 Jose Schutt Aine 1 Common
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationHomework Assignment 11
Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuous-time active filters. (3 points) Continuous time filters use resistors
More informationElectronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers
6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,
More informationLecture Stage Frequency Response - I (1/10/02) Page ECE Analog Integrated Circuits and Systems II P.E.
Lecture 070 Stage Frequency esponse I (/0/0) Page 070 LECTUE 070 SINGLESTAGE FEQUENCY ESPONSE I (EADING: GHLM 488504) Objective The objective of this presentation is:.) Illustrate the frequency analysis
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationElectronics II. Midterm #1
The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem
More informationMultistage Amplifier Frequency Response
Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband
More informationMicroelectronic Circuit Design 4th Edition Errata - Updated 4/4/14
Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: -1.35 x 10 6 cm/s Page 58, last exercise,
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationESE319 Introduction to Microelectronics Common Emitter BJT Amplifier
Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -
More informationElectronics II. Midterm II
The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in
More informationElectronics II. Final Examination
The University of Toledo f6fs_elct7.fm - Electronics II Final Examination Problems Points. 5. 0 3. 5 Total 40 Was the exam fair? yes no The University of Toledo f6fs_elct7.fm - Problem 5 points Given is
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationESE319 Introduction to Microelectronics. Feedback Basics
Feedback Basics Stability Feedback concept Feedback in emitter follower One-pole feedback and root locus Frequency dependent feedback and root locus Gain and phase margins Conditions for closed loop stability
More informationLecture 090 Multiple Stage Frequency Response - I (1/17/02) Page 090-1
Lecture 9 Multiple Stage Frequency esponse I (/7/2) Page 9 LECTUE 9 MULTIPLESTAGE FEQUENCY ESPONSE I (EADING: GHLM 56527) Objective The objective of this presentation is:.) Develop methods for the frequency
More informationChapter 5. Department of Mechanical Engineering
Source Transformation By KVL: V s =ir s + v By KCL: i s =i + v/r p is=v s /R s R s =R p V s /R s =i + v/r s i s =i + v/r p Two circuits have the same terminal voltage and current Source Transformation
More informationMICROELECTRONIC CIRCUIT DESIGN Second Edition
MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. Common-Emitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o --->, r oc --->, R L ---> Find V BIAS such that I C
More informationPhiladelphia University Faculty of Engineering Communication and Electronics Engineering
Module: Electronics II Module Number: 6503 Philadelphia University Faculty o Engineering Communication and Electronics Engineering Ampliier Circuits-II BJT and FET Frequency Response Characteristics: -
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationElectronics II. Final Examination
f3fs_elct7.fm - The University of Toledo EECS:3400 Electronics I Section Student Name Electronics II Final Examination Problems Points.. 3 3. 5 Total 40 Was the exam fair? yes no Analog Electronics f3fs_elct7.fm
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationThe Miller Approximation
The Miller Approximation The exact analysis is not particularly helpful for gaining insight into the frequency response... consider the effect of C µ on the input only I t C µ V t g m V t R'out = r o r
More informationECEN 326 Electronic Circuits
ECEN 326 Electronic Circuits Frequency Response Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering High-Frequency Model BJT & MOS B or G r x C f C or D r
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationThe Common-Emitter Amplifier
c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 210-1
Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More informationAs light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR
LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both
More informationLecture 140 Simple Op Amps (2/11/02) Page 140-1
Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and
More informationFrequency Response Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:
More informationHalf-circuit incremental analysis techniques
6.012 Electronic Devices and Circuits Lecture 19 Differential Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Design Problem out tomorrow in recitation Review Singletransistor
More informationECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM.
ECE137B Final Exam Wednesday 6/8/2016, 7:30-10:30PM. There are7 problems on this exam and you have 3 hours There are pages 1-32 in the exam: please make sure all are there. Do not open this exam until
More informationCommon Drain Stage (Source Follower) Claudio Talarico, Gonzaga University
Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor
More informationSeries & Parallel Resistors 3/17/2015 1
Series & Parallel Resistors 3/17/2015 1 Series Resistors & Voltage Division Consider the single-loop circuit as shown in figure. The two resistors are in series, since the same current i flows in both
More informationESE319 Introduction to Microelectronics. Feedback Basics
Feedback Basics Feedback concept Feedback in emitter follower Stability One-pole feedback and root locus Frequency dependent feedback and root locus Gain and phase margins Conditions for closed loop stability
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationUniversity of Illinois at Chicago Spring ECE 412 Introduction to Filter Synthesis Homework #4 Solutions
Problem 1 A Butterworth lowpass filter is to be designed having the loss specifications given below. The limits of the the design specifications are shown in the brick-wall characteristic shown in Figure
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationECE137B Final Exam. There are 5 problems on this exam and you have 3 hours There are pages 1-19 in the exam: please make sure all are there.
ECE37B Final Exam There are 5 problems on this exam and you have 3 hours There are pages -9 in the exam: please make sure all are there. Do not open this exam until told to do so Show all work: Credit
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationECE3050 Assignment 7
ECE3050 Assignment 7. Sketch and label the Bode magnitude and phase plots for the transfer functions given. Use loglog scales for the magnitude plots and linear-log scales for the phase plots. On the magnitude
More informationVoltage AmpliÞer Frequency Response
Voltage AmpliÞer Frequency Response Chapter 9 multistage voltage ampliþer 5 V M 7B M 7 M 5 R 35 kω M 6B M 6 Q 4 100 µa X M 3 Q B Q v OUT V s M 1 M 8 M9 V BIAS M 10 Approaches: 1. brute force OCTC -- do
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and
More informationand V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )
ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets
More informationECEN 325 Electronics
ECEN 325 Electronics Operational Amplifiers Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering Opamp Terminals positive supply inverting input terminal non
More informationUniversity of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS
University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits Final Exam 10Dec08 SOLUTIONS This exam is a closed book exam. Students are allowed to use a
More informationChapter 6 Frequency response of circuits. Stability
Chapter 6 Frequency response of circuits. Stability 6.. The frequency response of elementary functions 6... The frequency bandwidth 6... The frequency bandwidth /A/(dB ) A 0 3dB min max 6... The frequency
More informationLecture 04: Single Transistor Ampliers
Lecture 04: Single Transistor Ampliers Analog IC Design Dr. Ryan Robucci Department of Computer Science and Electrical Engineering, UMBC Spring 2015 Dr. Ryan Robucci Lecture IV 1 / 37 Single-Transistor
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2011
EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationLECTURE 130 COMPENSATION OF OP AMPS-II (READING: GHLM , AH )
Lecture 30 Compensation of Op AmpsII (/26/04) Page 30 LECTURE 30 COMPENSATION OF OP AMPSII (READING: GHLM 638652, AH 260269) INTRODUCTION The objective of this presentation is to continue the ideas of
More informationCircuit Topologies & Analysis Techniques in HF ICs
Circuit Topologies & Analysis Techniques in HF ICs 1 Outline Analog vs. Microwave Circuit Design Impedance matching Tuned circuit topologies Techniques to maximize bandwidth Challenges in differential
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3
ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o
More informationElectronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory
Electronic Circuits Prof. Dr. Qiuting Huang 6. Transimpedance Amplifiers, Voltage Regulators, Logarithmic Amplifiers, Anti-Logarithmic Amplifiers Transimpedance Amplifiers Sensing an input current ii in
More informationLecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005
6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier December, 2005 Contents:. Introduction 2. Intrinsic frequency response
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More informationECE 202 Fall 2013 Final Exam
ECE 202 Fall 2013 Final Exam December 12, 2013 Circle your division: Division 0101: Furgason (8:30 am) Division 0201: Bermel (9:30 am) Name (Last, First) Purdue ID # There are 18 multiple choice problems
More information6.301 Solid State Circuits Recitation 7: Emitter Degeneration, and More on Multistage Amps Prof. Joel L. Dawson
We re going to look at emitter degeneration in detail today. The purpose is in part to review, and in part to help pull together a few of the concepts that we ve dealt with in the class up to this point.
More informationECEN 325 Electronics
ECEN 325 Electronics Introduction Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering Ohm s Law i R i R v 1 v v 2 v v 1 v 2 v = v 1 v 2 v = v 1 v 2 v = ir
More informationElectronics II. Midterm #2
The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm - StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm
More information