EE C245 ME C218 Introduction to MEMS Design Fall 2011
|
|
- Felix Harrington
- 5 years ago
- Views:
Transcription
1 EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA Lecture EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 1 Lecture Outline Reading: Senturia, Chpt. 14 Lecture Topics: Detection Circuits Velocity Sensing Position Sensing EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 2 1
2 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 3 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 4 2
3 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 5 Position-to-Voltage Conversion To sense position (i.e., displacement), use a capacitive load C D EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 6 3
4 Position-to-Voltage Conversion To sense position (i.e., displacement), use a capacitive load C D EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 7 Velocity Sensing Circuits EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 8 4
5 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 9 Problems With Purely Resistive Sensing x b F d1 k Electrode 1 d 1 d 2 m Electrode 2 i o R D v o i 1 C 1 C 2 v 1 V P Includes C o, line C, bond pad C, and next stage C EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
6 F d1 Electrode 1 Problems With Purely Resistive Sensing x d 1 d 2 m b k Electrode 2 In general, the sensor output must be connected to the inputs of further signal conditioning circuits input R i of these circuits can load R D i o R D v o R i i 1 C 1 C 2 These change w/ hook-up not good. v 1 V P Problem: need a sensing circuit that is immune to parasitics or loading. Soln: use op amps. EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 11 F d1 The TransR Amplifier Advantage x b k The virtual ground provided by the ideal op amp eliminates the parasitic capacitance and R i R 2 Electrode 1 d 1 d 2 m i 1 C 1 C 2 v 1 Electrode 2 i i 2 R o = 0Ω The zero output resistance of the (ideal) op amp can drive virtually anything V P EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
7 Position Sensing Circuits EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 13 Problems With Pure-C Position Sensing To sense position (i.e., displacement), use a capacitive load EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
8 F d1 Electrode 1 The Op Amp Integrator Advantage x d 1 d 2 m b k Electrode 2 The virtual ground provided by the ideal op amp eliminates the parasitic capacitance i o R C 2 1 R 2 >> sc2 (for biasing) i 1 C 1 C 2 v 1 V P EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 15 Differential Position Sensing EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
9 Differential Position Sensing Example: ADXL-50 Tethers with fixed ends Proof Mass Sense Finger C 1 C 2 Fixed Electrodes V P Suspension Beam in Tension C 1 V o C 2 -V P EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 17 Buffer-Bootstrapped Position Sensing +V P Includes capacitance from interconnects, bond pads, and C gs of the op amp C gd + - Unity Gain Buffer -V P C gd = gate-to-drain capacitance of the input MOS transistor Bootstrap the ground lines around the interconnect and bond pads No voltage across It s effectively not there! Interconnect Ground Plane 1 EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
10 Effect of Finite Op Amp Gain +V P Total ADXL-50 Sense C ~ 100fF C gd + - Unity Gain Buffer -V P EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/08 19 Integrator-Based Diff. Position Sensing +V P R 2 i o C F - 1 R 2 >> sc2 (for biasing) C 0 p + v -V P EE C245: Introduction to MEMS Design LecM 14 C. Nguyen 11/18/
EE C245 ME C218 Introduction to MEMS Design
EE C45 ME C8 Introduction to MEMS Design Fall 007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 5: Output t
More informationEE C245 ME C218 Introduction to MEMS Design
EE C45 ME C18 Introduction to MEMS Design Fall 008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 6: Output
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2012
EE C245 ME C218 Introduction to MEMS Design Fall 2012 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 17: Energy
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 22: Capacitive
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 19: Resonance
More informationEE C245 ME C218 Introduction to MEMS Design
EE C45 ME C8 Introduction to MEMS Deign Fall 007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Science Univerity of California at Berkeley Berkeley, CA 9470 Lecture 5: Output t Sening
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C45 ME C8 Introduction to MEMS Design Fall 007 Prof. Clark T.C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 3: Input Modeling
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2016
EE C47B ME C18 Introduction to MEMS Design Spring 016 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture EE C45:
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 15: Beam
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 23: Electrical
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 20: Equivalent
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2010
EE C245 ME C218 Introduction to MEMS Design Fall 2010 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2011 C. Nguyen PROBLEM SET #7. Table 1: Gyroscope Modeling Parameters
Issued: Wednesday, Nov. 23, 2011. PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 8, 2011, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 16: Energy
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OP-AMP It consists of two stages: First
More informationDesign of Analog Integrated Circuits
Design of Analog Integrated Circuits Chapter 11: Introduction to Switched- Capacitor Circuits Textbook Chapter 13 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4
More informationFrequency Response Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 21: Gyros
More informationLecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005
6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier December, 2005 Contents:. Introduction 2. Intrinsic frequency response
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationLecture 23 - Frequency Resp onse of Amplifiers (I) Common-Source Amplifier. May 6, 2003
6.0 Microelectronic Devices and Circuits Spring 003 Lecture 3 Lecture 3 Frequency Resp onse of Amplifiers (I) CommonSource Amplifier May 6, 003 Contents:. Intro duction. Intrinsic frequency resp onse of
More informationVoltage AmpliÞer Frequency Response
Voltage AmpliÞer Frequency Response Chapter 9 multistage voltage ampliþer 5 V M 7B M 7 M 5 R 35 kω M 6B M 6 Q 4 100 µa X M 3 Q B Q v OUT V s M 1 M 8 M9 V BIAS M 10 Approaches: 1. brute force OCTC -- do
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 13: Material
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationLecture 23: Negative Resistance Osc, Differential Osc, and VCOs
EECS 142 Lecture 23: Negative Resistance Osc, Differential Osc, and VCOs Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California,
More informationMidterm Exam (closed book/notes) Tuesday, February 23, 2010
University of California, Berkeley Spring 2010 EE 42/100 Prof. A. Niknejad Midterm Exam (closed book/notes) Tuesday, February 23, 2010 Guidelines: Closed book. You may use a calculator. Do not unstaple
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 ecture 15: Beam
More informationProblem Set 4 Solutions
University of California, Berkeley Spring 212 EE 42/1 Prof. A. Niknejad Problem Set 4 Solutions Please note that these are merely suggested solutions. Many of these problems can be approached in different
More informationHomework 6 Solutions and Rubric
Homework 6 Solutions and Rubric EE 140/40A 1. K-W Tube Amplifier b) Load Resistor e) Common-cathode a) Input Diff Pair f) Cathode-Follower h) Positive Feedback c) Tail Resistor g) Cc d) Av,cm = 1/ Figure
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 210-1
Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More informationEE 434 Lecture 12. Process Flow (wrap up) Device Modeling in Semiconductor Processes
EE 434 Lecture 12 Process Flow (wrap up) Device Modeling in Semiconductor Processes Quiz 6 How have process engineers configured a process to assure that the thickness of the gate oxide for the p-channel
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationEE 330. Lecture 35. Parasitic Capacitances in MOS Devices
EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2
More informationElectronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers
6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationCircuits. L5: Fabrication and Layout -2 ( ) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. G-Number
EE610: CMOS Analog Circuits L5: Fabrication and Layout -2 (12.8.2013) B. Mazhari Dept. of EE, IIT Kanpur 44 Passive Components: Resistor Besides MOS transistors, sometimes one requires to implement passive
More informationStability and Frequency Compensation
類比電路設計 (3349) - 2004 Stability and Frequency ompensation hing-yuan Yang National hung-hsing University Department of Electrical Engineering Overview Reading B Razavi hapter 0 Introduction In this lecture,
More informationEE 143 Microfabrication Technology Fall 2014
EE 143 Microfabrication Technology Fall 2014 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 EE 143: Microfabrication
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD
More informationLecture 120 Compensation of Op Amps-I (1/30/02) Page ECE Analog Integrated Circuit Design - II P.E. Allen
Lecture 20 Compensation of Op AmpsI (/30/02) Page 20 LECTURE 20 COMPENSATION OF OP AMPS I (READING: GHLM 425434 and 624638, AH 249260) INTRODUCTION The objective of this presentation is to present the
More informationEE141. EE141-Spring 2006 Digital Integrated Circuits. Administrative Stuff. Class Material. Flash Memory. Read-Only Memory Cells MOS OR ROM
EE141-pring 2006 igital Integrated Circuits Lecture 29 Flash memory Administrative tuff reat job on projects and posters! Homework #10 due today Lab reports due this week Friday lab in 353 Final exam May
More informationEE C247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2014 PROBLEM SET #1
Issued: Thursday, Jan. 30, 2014 PROBLEM SET #1 Due (at 9 a.m.): Wednesday Feb. 12, 2014, in the EE C247B HW box near 125 Cory. This homework assignment is intended to give you some early practice playing
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION
ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationEE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 - ME C8 Introduction to MEMS Design Fall 3 Roger Howe and Thara Srinivasan Lecture 9 Energy Methods II Today s Lecture Mechanical structures under driven harmonic motion develop analytical techniques
More informationECE 342 Electronic Circuits. Lecture 25 Frequency Response of CG, CB,SF and EF
ECE 342 Electronic Circuits ecture 25 Frequency esponse of CG, CB,SF and EF Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 342 Jose Schutt Aine 1 Common
More informationUniversity of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences. EECS 40 Midterm II
University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences EECS 40 Midterm II Spring 2001 Prof. Roger T. Howe April 11, 2001 Name: Last, First Student
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------
More informationAnnouncements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
- Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 12-3pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationBiosensors and Instrumentation: Tutorial 2
Biosensors and Instrumentation: Tutorial 2. One of the most straightforward methods of monitoring temperature is to use the thermal variation of a resistor... Suggest a possible problem with the use of
More informationDigital Integrated Circuits A Design Perspective
Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures
More informationELEN 610 Data Converters
Spring 04 S. Hoyos - EEN-60 ELEN 60 Data onverters Sebastian Hoyos Texas A&M University Analog and Mixed Signal Group Spring 04 S. Hoyos - EEN-60 Electronic Noise Signal to Noise ratio SNR Signal Power
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationEE 330 Lecture 3. Basic Concepts. Feature Sizes, Manufacturing Costs, and Yield
EE 330 Lecture 3 Basic Concepts Feature Sizes, Manufacturing Costs, and Yield Review from Last Time Analog Flow VLSI Design Flow Summary System Description Circuit Design (Schematic) SPICE Simulation Simulation
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationLecture 18. Common Source Stage
ecture 8 OUTINE Basic MOSFET amplifier MOSFET biasing MOSFET current sources Common source amplifier eading: Chap. 7. 7.7. EE05 Spring 008 ecture 8, Slide Prof. Wu, UC Berkeley Common Source Stage λ =
More informationSample-and-Holds David Johns and Ken Martin University of Toronto
Sample-and-Holds David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 18 Sample-and-Hold Circuits Also called track-and-hold circuits Often needed in A/D converters
More information0 t < 0 1 t 1. u(t) =
A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 13 p. 22/33 Step Response A unit step function is described by u(t) = ( 0 t < 0 1 t 1 While the waveform has an artificial jump (difficult
More informationLecture 6 Power Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010
EE4800 CMOS Digital IC Design & Analysis Lecture 6 Power Zhuo Feng 6.1 Outline Power and Energy Dynamic Power Static Power 6.2 Power and Energy Power is drawn from a voltage source attached to the V DD
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 11: Bulk
More informationTransducers. Today: Electrostatic Capacitive. EEL5225: Principles of MEMS Transducers (Fall 2003) Instructor: Dr. Hui-Kai Xie
EEL55: Principles of MEMS Transducers (Fall 3) Instructor: Dr. Hui-Kai Xie Last lecture Piezoresistive Pressure sensor Transducers Today: Electrostatic Capacitive Reading: Senturia, Chapter 6, pp. 15-138
More informationLecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;
More informationCapacitive Sensor Interfaces
Capacitive Sensor Interfaces Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Capacitive Sensor Interfaces 1996
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design & Logical Effort Prof. blj@ece.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More informationEE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 - ME C18 Introduction to MEMS Design Fall 003 Roger Howe and Thara Srinivasan Lecture 11 Electrostatic Actuators II Today s Lecture Linear (vs. displacement) electrostatic actuation: vary overlap
More informationEE382M-14 CMOS Analog Integrated Circuit Design
EE382M-14 CMOS Analog Integrated Circuit Design Lecture 3, MOS Capacitances, Passive Components, and Layout of Analog Integrated Circuits MOS Capacitances Type of MOS transistor capacitors Depletion capacitance
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.
Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationChapter 2 Switched-Capacitor Circuits
Chapter 2 Switched-Capacitor Circuits Abstract his chapter introduces SC circuits. A brief description is given for the main building blocks of a SC filter (operational amplifiers, switches, capacitors,
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanics
More informationCommon Drain Stage (Source Follower) Claudio Talarico, Gonzaga University
Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C
More informationLECTURE 130 COMPENSATION OF OP AMPS-II (READING: GHLM , AH )
Lecture 30 Compensation of Op AmpsII (/26/04) Page 30 LECTURE 30 COMPENSATION OF OP AMPSII (READING: GHLM 638652, AH 260269) INTRODUCTION The objective of this presentation is to continue the ideas of
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanical
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationChapter 10 Feedback. PART C: Stability and Compensation
1 Chapter 10 Feedback PART C: Stability and Compensation Example: Non-inverting Amplifier We are analyzing the two circuits (nmos diff pair or pmos diff pair) to realize this symbol: either of the circuits
More informationLecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson
Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics Lena Peterson 2015-10-13 Outline (1) Why is the CMOS inverter gain not infinite? Large-signal
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationECE2262 Electric Circuits. Chapter 4: Operational Amplifier (OP-AMP) Circuits
ECE2262 Electric Circuits Chapter 4: Operational Amplifier (OP-AMP) Circuits 1 4.1 Operational Amplifiers 2 4. Voltages and currents in electrical circuits may represent signals and circuits can perform
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationMetal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
Metal-Oxide-Semiconductor ield Effect Transistor (MOSET) Source Gate Drain p p n- substrate - SUB MOSET is a symmetrical device in the most general case (for example, in an integrating circuit) In a separate
More informationAnalog Integrated Circuit Design Prof. Nagendra Krishnapura Department of Electrical Engineering Indian Institute of Technology, Madras
Analog Integrated Circuit Design Prof. Nagendra Krishnapura Department of Electrical Engineering Indian Institute of Technology, Madras Lecture No - 42 Fully Differential Single Stage Opamp Hello and welcome
More informationSwitched Capacitor Circuits II. Dr. Paul Hasler Georgia Institute of Technology
Switched Capacitor Circuits II Dr. Paul Hasler Georgia Institute of Technology Basic Switch-Cap Integrator = [n-1] - ( / ) H(jω) = - ( / ) 1 1 - e -jωt ~ - ( / ) / jωt (z) - z -1 1 (z) = H(z) = - ( / )
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2017
247B/M 28: Introduction to MMS Design Lecture 0m2: Mechanics of Materials CTN 2/6/7 Outline C247B M C28 Introduction to MMS Design Spring 207 Prof. Clark T.- Reading: Senturia, Chpt. 8 Lecture Topics:
More informationLast Name _Di Tredici_ Given Name _Venere_ ID Number
Last Name _Di Tredici_ Given Name _Venere_ ID Number 0180713 Question n. 1 Discuss noise in MEMS accelerometers, indicating the different physical sources and which design parameters you can act on (with
More informationEE 435. Lecture 37. Parasitic Capacitances in MOS Devices. String DAC Parasitic Capacitances
EE 435 Lecture 37 Parasitic Capacitances in MOS Devices String DAC Parasitic Capacitances Parasitic Capacitors in MOSFET (will initially consider two) Parasitic Capacitors in MOSFET C GCH Parasitic Capacitors
More informationEEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationHomework 3 Solution. Due Friday (5pm), Feb. 14, 2013
University of California, Berkeley Spring 2013 EE 42/100 Prof. K. Pister Homework 3 Solution Due Friday (5pm), Feb. 14, 2013 Please turn the homework in to the drop box located next to 125 Cory Hall (labeled
More information