ECE 546 Lecture 11 MOS Amplifiers


 Phillip Morrison
 1 years ago
 Views:
Transcription
1 ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois ECE 546 Jose Schutt Aine
2 Amplifiers Definitions Used to increase the amplitude of an input signal to a desired level This is a fundamental signal processing function Must be linear (free of distortion) Shape of signal preserved v i (t) AMP v o (t) v () t Av (), t where A is the voltage gain o i Voltage Gain A v o : v vi Power Gain : A p Load Power ( PL ) Input Power ( P ) I ECE 546 Jose Schutt Aine 2
3 Amplifiers A p vi vi oo I I Current Gain A Note A : p AvA i i o : i ii Expressing gain in db (decibels) Voltage gain in db 20log A V Current gain in db 20log A I Power gain in db 0log A P ECE 546 Jose Schutt Aine 3
4 Amplifiers Since output associated with the signal is larger than the input signal, power must come from DC supply P VI VI DC 2 2 PDC PI PL Pdissipated PL 00 P DC Power Efficiency ECE 546 Jose Schutt Aine 4
5 Biasing of Amp Bias will provide quiescent points for input and output about which variations will take place. Bias maintain amplifier in active region. V () t V v () t I QI I V () t V v () t o QO o v () t Av () t o v I Amplifier characteristics are determined by bias point A v dv dv o I at Q ECE 546 Jose Schutt Aine 5
6 SmallSignal Model What is a smallsignal incremental model? Equivalent circuit that only accounts for signal level fluctuations about the DC bias operating points Fluctuations are assumed to be small enough so as not to drive the devices out of the proper range of operation Assumed to be linear Derives from superposition principle ECE 546 Jose Schutt Aine 6
7 Biasing of MOS Transistors Bias Characteristics Operation in saturation region Stable and predictable drain current W I C V V 2 L 2 D n ox GS T ECE 546 Jose Schutt Aine 7
8 SingleSupply MOS Bias Choose R and R 2 to fix V G Choose R S and R 2 to fix V S V GS determines I D Choose R D to fix V D ECE 546 Jose Schutt Aine 8
9 Common Source MOSFET Amplifier Bias is to keep MOS in saturation region ECE 546 Jose Schutt Aine 9
10 Common Source MOSFET Amplifier SmallSignal Equivalent Circuit for MOS (device only) W I k V V 2 L 2 ' D n GS T Which leads to g m I V D GS V GS V GSQ 2I V D eff g k W L I ' m 2 n / D where VGS VT V g / eff m is proportional to W L ECE 546 Jose Schutt Aine 0
11 MOSFET Output Impedance To calculate r ds, account for r ds VDS I W D V 2 I GS VGSQ Cox VGS V T 2L DP W I k V V 2 L 2 ' DP n GS T r ds, accounts for channel width modulation resistance. ECE 546 Jose Schutt Aine
12 Midband Frequency Gain Incremental model for complete amplifier A MB v R r R g v R R r R out B ds D m in B g ds D ECE 546 Jose Schutt Aine 2
13 Example For the circuit shown, k=75 A/V 2, V T = V, =0 (a) Find V DQ, V SQ (b) Find the midband gain R 205 V V 4V GQ 2 DD R R2 25 V V V 42I GSQ GQ SQ DQ 2 2 IDQ K VGSQ V T IDQ I I I 2 DQ 0.075(9 2 DQ 4 DQ) 2 2 4IDQ 2IDQ 9 3.3IDQ IDQ 6.33IDQ ECE 546 Jose Schutt Aine 3
14 Example (Cont ) IDQ maor ma 2 IDQ V V R I V DQ DD D DQ V R I V SQ S DQ VDQ VSQ ma 6.22V 0.756V reject since voltage drop across R D will be too large ECE 546 Jose Schutt Aine 4
15 Example (Cont ) W g k I L ' m 2 n DQ A g R MB m D AMB 3.37 ECE 546 Jose Schutt Aine 5
16 LowPass Circuit V o In frequency domain: Vi Vo Av jrc V jrc A v jrc jf / f i 2 V o Vi R jc j C ECE 546 Jose Schutt Aine 6
17 LowPass Circuit f 2 2 RC 2 2 RC timeconstant ECE 546 Jose Schutt Aine 7
18 HighPass Circuit V o VR i Vi Vo Av R V i 2 / jc jrc j jf f 2 frc f2 2 RC ECE 546 Jose Schutt Aine 8
19 Model for general Amplifying Element C c and C c2 are coupling capacitors (large) F C in and C out are parasitic capacitors (small) pf ECE 546 Jose Schutt Aine 9
20 Midband Frequencies  Coupling capacitors are short circuits  Parasitic capacitors are open circuits A MB vout Rin RL A v R R R R in g in out L ECE 546 Jose Schutt Aine 20
21 Low Frequency Model  Coupling capacitors are present  Parasitic capacitors are open circuits v vinrin vin jcc Rin R j Cc ( Rg Rin) g Rin jcc R jcc ( Rg Rin) in vab vin R g R in jcc ( Rg Rin) ab ECE 546 Jose Schutt Aine 2
22 MOSFET HighFrequency Model C sb C sbo V V SB o W W 2I gm ncox Veff ncox ID L L V 2 D g g g 2 2 V mb m m F sb eff r V / I ds A D I 2 C WLC WL C 3 gs ox ov ox C C db D C WL C V V gd ov ox dbo DB o ECE 546 Jose Schutt Aine 22
23 CS  Three Frequency Bands ECE 546 Jose Schutt Aine 23
24 UnityGain Frequency f T f T is defined as the frequency at which the shortcircuit current gain of the common source configuration becomes unity Define: s j (neglect sc gd V gs since C gd is small) I g V sc V o m gs gd gs I g V o m gs V gs sc gs Cgd I i Io gm I s C C i gs gd ECE 546 Jose Schutt Aine 24
25 Calculating f T For s=j, magnitude of current gain becomes unity at T gm gm ft C C 2 C C gs gd gs gd f T ~ 00 MHz for 5m CMOS, f T ~ several GHz for 0.3m CMOS ECE 546 Jose Schutt Aine 25
26 CS  HighFrequency Response ECE 546 Jose Schutt Aine 26
27 CS Miller Effect Exact Analysis G R G R G R i D g ds D g i ds ' RD R D rds GD gds ' GR i D gm scgd o ' ' 2 ' i i g gs gd gd D i g gd m D gd gs D v v G G sc C sc R G G sc g R s C C R g r ECE 546 Jose Schutt Aine 27
28 CS Miller Effect Exact Analysis We neglect the terms in s 2 since sc C R sc g R or sc g 2 ' ' gd gs D gd m D gs m ' ' ' v GR o i D gm scgd v G G s C C g R C R G G i i g gs gd m D gd D i g Miller If we multiply through by R i G i ECE 546 Jose Schutt Aine 28
29 CS Miller Effect Exact Analysis ' v RD g o m scgd v RG sr C C g R C R RG ' ' i i g i gs gd m D gd D s g From which we extract the 3dB frequency point f H RG i g ' ' 2 R C C g R C R RG i gs gd m D gd D i g ECE 546 Jose Schutt Aine 29
30 CS Miller Effect Exact Analysis If G g is negligible f H 2 R C C g R C R ' ' i gs gd m D gd D If R i =0 f H 2 C R gd ' D ECE 546 Jose Schutt Aine 30
31 F () s a H Transfer Function Representation In general, the transfer function of an amplifier can be expressed as m sz sz... sz 2 sp sp... sp 2 m m Z, Z 2, Z m are the zeros of the transfer function P, P 2, P m are the poles of the transfer function s is a complex number s = + j ECE 546 Jose Schutt Aine 3
32 Designer is interested in midband operation However needs to know upper 3 db frequency In many cases some conditions are met: Zeros are infinity or at very high frequencies One of the poles ( P ) is at much lower frequency than other poles (dominant pole) If the conditions are met then F H (s) can be approximated by: F 3dB Frequency Determination A() s A F () s ( s) and we have M H H P s / P H ECE 546 Jose Schutt Aine 32
33 3dB Frequency Determination If the lowest frequency pole is at least 4 times away from the nearest pole or zero, it is a dominant pole If there is no dominant pole, the 3 db frequency H can be approximated by: H / P P2 Z Z2 ECE 546 Jose Schutt Aine 33
34 F OpenCircuit Time Constants H () s asas as n n bs bs... bs The coefficients a and b are related to the frequencies of the zeros and poles respectively. n n b... p p2 pn b can be obtained by summing the individual time constants of the circuit using the opencircuit time constant method ECE 546 Jose Schutt Aine 34
35 OpenCircuit Time Constant Method The time constant of each capacitor in the circuit is evaluated. It is the product of the capacitance and the resistance seen across its terminals with: All other internal capacitors open circuited All independent voltage sources short circuited All independent current sources opened The value of b is computed by summing the individual time constants b n CR i i io ECE 546 Jose Schutt Aine 35
36 OpenCircuit Time Constant Method An approximation can be made by using the value of b to determine the 3dB upper frequency point H If the zeros are not dominant and if one of the poles P is dominant, then b P Assuming that the 3 db frequency will be approximately equal to P CR H b i i io ECE 546 Jose Schutt Aine 36
37 Bandwidth of Multistage Amplifier The poles of a multistage amplifier are difficult to obtain analytically An approximate value for the 3dB upper frequency point 3dB can be obtained by assigning an open circuit time constant io to each capacitor C i ECE 546 Jose Schutt Aine 37
38 Bandwidth of Multistage Amplifier The time constant io is the product of the capacitance and the resistance seen across its terminals with: All other internal capacitors open circuited All independent voltage sources short circuited All independent current sources opened The upper 3dB frequency point 3dB is then found by using : 3dB io ECE 546 Jose Schutt Aine 38
39 MOSFET Amp Bandwidth MOSFET amplifier has R sig = 00 k, C gs =C gd = pf, g m = 4 ma/v and R L =3.33 k. Find midband voltage gain and 3dB frequency. A Vo Rin ' 420 g R V R R M m L sig in sig
40 MOSFET Amp Analysis To determine the 3 db frequency, we first evaluate the time constant associated with C gs. First, we determine the resistance R gs seen by C gs. The capacitance C gd is removed and V sig is short circuited R R R 420 k 00 k80.8 k gs in sig The time constant associated with C gs is C R gs gs gs ns ECE 546 Jose Schutt Aine 40
41 MOSFET Amp Analysis The resistance R gd seen by C gd is found by setting C gs = 0 and short circuiting V sig I I x V R g V gs in x m gs V R gs sig V gs V R ' L x V gs I R x ' ' R Rin Rsig V R R R g RR x ' ' ' ' gd L m L I x ECE 546 Jose Schutt Aine 4
42 MOSFET Amp Analysis The open circuit time constant of C gd is C R gd gd gd ns The upper 3 db frequency H can now be determined from H 806 krad / gs gd 9 s fh H khz ECE 546 Jose Schutt Aine 42
ECE Networks & Systems
ECE 342 1. Networks & Systems Jose E. Schutt Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 What is Capacitance? 1 2 3 Voltage=0 No Charge No Current Voltage build
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationECE 342 Electronic Circuits. Lecture 25 Frequency Response of CG, CB,SF and EF
ECE 342 Electronic Circuits ecture 25 Frequency esponse of CG, CB,SF and EF Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 342 Jose Schutt Aine 1 Common
More informationChapter 9 Frequency Response. PART C: High Frequency Response
Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cutoff frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance
More informationExact Analysis of a CommonSource MOSFET Amplifier
Exact Analysis of a CommonSource MOSFET Amplifier Consider the commonsource MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel
More information1/13/12 V DS. I d V GS. C ox ( = f (V GS ,V DS ,V SB = I D. + i d + I ΔV + I ΔV BS V BS. 19 January 2012
/3/ 9 January 0 Study the linear model of MOS transistor around an operating point." MOS in saturation: V GS >V th and V S >V GS V th " VGS vi  I d = I i d VS I d = µ n ( L V V γ Φ V Φ GS th0 F SB F
More informationECE 342 Electronic Circuits. 3. MOS Transistors
ECE 342 Electronic Circuits 3. MOS Transistors Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationECE343 Test 1: Feb 10, :008:00pm, Closed Book. Name : SOLUTION
ECE343 Test : Feb 0, 00 6:008:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT3 Department of Electrical and Computer Engineering Winter 2012 1. A commonemitter amplifier that can be represented by the following equivalent circuit,
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202  Manuel Toledo August 20, 2012 INEL 4202  Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationECE342 Test 3: Nov 30, :008:00, Closed Book. Name : Solution
ECE342 Test 3: Nov 30, 2010 6:008:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 WideSwing Current Mirrors I bias I V I in out out = I in V W L bias 
More informationCommon Drain Stage (Source Follower) Claudio Talarico, Gonzaga University
Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i  v o V DD v bs  v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs  C
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationEE 330. Lecture 35. Parasitic Capacitances in MOS Devices
EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A  β β VXX Q 2
More informationLecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;
More informationECE 523/421  Analog Electronics University of New Mexico Solutions Homework 3
ECE 523/42  Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationFrequency Response Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationLecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 1 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;
More informationLecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005
6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier December, 2005 Contents:. Introduction 2. Intrinsic frequency response
More informationECEN 326 Electronic Circuits
ECEN 326 Electronic Circuits Frequency Response Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering HighFrequency Model BJT & MOS B or G r x C f C or D r
More informationLecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics. Lena Peterson
Lecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics Lena Peterson 20151013 Outline (1) Why is the CMOS inverter gain not infinite? Largesignal
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date  Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer  D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationCMOS Analog Circuits
CMOS Analog Circuits L6: Common Source Amplifier1 (.8.13) B. Mazhari Dept. of EE, IIT Kanpur 19 Problem statement : Design an amplifier which has the following characteristics: + CC O in R L  CC A 100
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I curve (SquareLaw Model)
More informationECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION  SOLUTIONS (Average score = 78/100) R 2 = R 1 =
ECE 3050A, Spring 2004 Page Problem (20 points This problem must be attempted) The simplified schematic of a feedback amplifier is shown. Assume that all transistors are matched and g m ma/v and r ds.
More informationECE 342 Electronic Circuits. Lecture 6 MOS Transistors
ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for nonideal transistor behavior Incremental output port resistance Incremental changes
More informationLecture 23  Frequency Resp onse of Amplifiers (I) CommonSource Amplifier. May 6, 2003
6.0 Microelectronic Devices and Circuits Spring 003 Lecture 3 Lecture 3 Frequency Resp onse of Amplifiers (I) CommonSource Amplifier May 6, 003 Contents:. Intro duction. Intrinsic frequency resp onse of
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationElectronic Devices and Circuits Lecture 18  Single Transistor Amplifier Stages  Outline Announcements. Notes on Single Transistor Amplifiers
6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,
More informationDesign of Analog Integrated Circuits
Design of Analog Integrated Circuits Chapter 11: Introduction to Switched Capacitor Circuits Textbook Chapter 13 13.1 General Considerations 13.2 Sampling Switches 13.3 SwitchedCapacitor Amplifiers 13.4
More informationECE 342 Solid State Devices & Circuits 4. CMOS
ECE 34 Solid State Devices & Circuits 4. CMOS Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More informationECE315 / ECE515 Lecture 11 Date:
ecture 11 Date: 15.09.016 MOS Differential Pair Quantitative Analysis differential input Small Signal Analysis MOS Differential Pair ECE315 / ECE515 M 1 and M are perfectly matched (at least in theory!)
More informationECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor NChannel MOSFET Built on ptype
More informationPractice 7: CMOS Capacitance
Practice 7: CMOS Capacitance Digital Electronic Circuits Semester A 2012 MOSFET Capacitances MOSFET Capacitance Components 3 Gate to Channel Capacitance In general, the gate capacitance is similar to a
More informationMicroelectronics Main CMOS design rules & basic circuits
GBM8320 Dispositifs médicaux intelligents Microelectronics Main CMOS design rules & basic circuits Mohamad Sawan et al. Laboratoire de neurotechnologies Polystim mohamad.sawan@polymtl.ca M5418 6 & 7 September
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OPAMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OPAMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 Email: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OPAMP It consists of two stages: First
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationCircuits. L2: MOS Models2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. GNumber
EE610: CMOS Analog Circuits L: MOS Models (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationSampleandHolds David Johns and Ken Martin University of Toronto
SampleandHolds David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 18 SampleandHold Circuits Also called trackandhold circuits Often needed in A/D converters
More information6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers
6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers Michael Perrott Massachusetts Institute of Technology March 8, 2005 Copyright 2005 by Michael H. Perrott Notation for Mean,
More informationIFB270 Advanced Electronic Circuits
IFB270 Advanced Electronic Circuits Chapter 0: Ampliier requency response Pro. Manar Mohaisen Department o EEC Engineering Review o the Precedent Lecture Reviewed o the JFET and MOSFET Explained and analyzed
More informationESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model
Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationThe Miller Approximation
The Miller Approximation The exact analysis is not particularly helpful for gaining insight into the frequency response... consider the effect of C µ on the input only I t C µ V t g m V t R'out = r o r
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the opamp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationLecture 28  The Long MetalOxideSemiconductor FieldEffect Transistor (cont.) April 18, 2007
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 281 Lecture 28  The Long MetalOxideSemiconductor FieldEffect Transistor (cont.) April 18, 2007 Contents: 1. Secondorder and
More informationECE 497 JS Lecture  12 Device Technologies
ECE 497 JS Lecture  12 Device Technologies Spring 2004 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationMicroelectronic Devices and Circuits Lecture 13  Linear Equivalent Circuits  Outline Announcements Exam Two 
6.012 Microelectronic Devices and Circuits Lecture 13 Linear Equivalent Circuits Outline Announcements Exam Two Coming next week, Nov. 5, 7:309:30 p.m. Review Subthreshold operation of MOSFETs Review Large
More informationAnnouncements. EE141 Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
 Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 123pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120
ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationECE 342 Electronic Circuits. Lecture 35 CMOS Delay Model
ECE 34 Electronic Circuits Lecture 35 CMOS Delay Model Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More informationStability and Frequency Compensation
類比電路設計 (3349)  2004 Stability and Frequency ompensation hingyuan Yang National hunghsing University Department of Electrical Engineering Overview Reading B Razavi hapter 0 Introduction In this lecture,
More informationVolterra Series: Introduction & Application
ECEN 665 (ESS : RF Communication Circuits and Systems Volterra Series: Introduction & Application Prepared by: Heng Zhang Part of the material here provided is based on Dr. Chunyu Xin s dissertation Outline
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationMOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA
MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the FieldEffect Transistor! Julius Lilienfeld filed a patent describing
More informationPractice 3: Semiconductors
Practice 3: Semiconductors Digital Electronic Circuits Semester A 2012 VLSI Fabrication Process VLSI Very Large Scale Integration The ability to fabricate many devices on a single substrate within a given
More informationChapter7. FET Biasing
Chapter7. J configurations Fixed biasing Self biasing & Common Gate Voltage divider MOS configurations Depletiontype Enhancementtype JFET: Fixed Biasing Example 7.1: As shown in the figure, it is the
More informationEE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors
EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationECE 255, Frequency Response
ECE 255, Frequency Response 19 April 2018 1 Introduction In this lecture, we address the frequency response of amplifiers. This was touched upon briefly in our previous lecture in Section 7.5 of the textbook.
More informationLecture 04: Single Transistor Ampliers
Lecture 04: Single Transistor Ampliers Analog IC Design Dr. Ryan Robucci Department of Computer Science and Electrical Engineering, UMBC Spring 2015 Dr. Ryan Robucci Lecture IV 1 / 37 SingleTransistor
More informationLecture 310 OpenLoop Comparators (3/28/10) Page 3101
Lecture 310 OpenLoop Comparators (3/28/10) Page 3101 LECTURE 310 OPENLOOP COMPARATORS LECTURE ORGANIZATION Outline Characterization of comparators Dominant pole, openloop comparators Twopole, openloop
More informationChapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support
Chapter 3 Spring 2012 4 th Semester Mechatronics SZABIST, Karachi 2 Course Support humera.rafique@szabist.edu.pk Office: 100 Campus (404) Official: ZABdesk https://sites.google.com/site/zabistmechatronics/home/spring2012/ecd
More informationPhiladelphia University Faculty of Engineering Communication and Electronics Engineering
Module: Electronics II Module Number: 6503 Philadelphia University Faculty o Engineering Communication and Electronics Engineering Ampliier CircuitsII BJT and FET Frequency Response Characteristics: 
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationLecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation
Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation Text sec 1.2 pp. 2832; sec 3.2 pp. 128129 Current source Ideal goal Small signal model: Open
More informationVoltage AmpliÞer Frequency Response
Voltage AmpliÞer Frequency Response Chapter 9 multistage voltage ampliþer 5 V M 7B M 7 M 5 R 35 kω M 6B M 6 Q 4 100 µa X M 3 Q B Q v OUT V s M 1 M 8 M9 V BIAS M 10 Approaches: 1. brute force OCTC  do
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis  Bode plot low frequency response BJT amplifier Miller
More informationEE105  Fall 2005 Microelectronic Devices and Circuits
EE105  Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture
More informationMultistage Amplifier Frequency Response
Multistage Amplifier Frequency Response * Summary of frequency response of singlestages: CE/CS: suffers from Miller effect CC/CD: wideband  see Section 0.5 CB/CG: wideband  see Section 0.6 (wideband
More informationMOS Transistor IV Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor IV Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationELEC 3908, Physical Electronics, Lecture 26. MOSFET Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 26 MOSFET Small Signal Modelling Lecture Outline MOSFET small signal behavior will be considered in the same way as for the diode and BJT Capacitances will be considered
More informationCHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012
1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET DFET (Depletion MOS) MOSFET (Enhancement EFET) DC biasing Small signal
More informationEEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced
More informationECE PN Junctions and Diodes
ECE 342 2. PN Junctions and iodes Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 B: material dependent parameter = 5.4 10
More informationEE 330 Lecture 16. MOS Device Modeling pchannel nchannel comparisons Model consistency and relationships CMOS Process Flow
EE 330 Lecture 16 MOS Device Modeling pchannel nchannel comparisons Model consistency and relationships CMOS Process Flow Review from Last Time Operation Regions by Applications Id I D 300 250 200 150
More informationSwitchedCapacitor Circuits David Johns and Ken Martin University of Toronto
SwitchedCapacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually
More informationRadivoje Đurić, 2015, Analogna Integrisana Kola 1
OVA & OTA 1 OVA VAOperational Voltage Amplifier Ideally a voltagecontrolled voltage source Typically contains an output stage that can drive arbitrary loads, including small resistances Predominantly
More informationLecture 18. Common Source Stage
ecture 8 OUTINE Basic MOSFET amplifier MOSFET biasing MOSFET current sources Common source amplifier eading: Chap. 7. 7.7. EE05 Spring 008 ecture 8, Slide Prof. Wu, UC Berkeley Common Source Stage λ =
More informationLecture 140 Simple Op Amps (2/11/02) Page 1401
Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 2101
Lecture 210 Physical Aspects of ICs (12/15/01) Page 2101 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: TextSec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More information