EE105 Fall 2014 Microelectronic Devices and Circuits

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "EE105 Fall 2014 Microelectronic Devices and Circuits"

Transcription

1 EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB) = g mr L + g m R E = r π + (β +)R E = "# r o ( + g m R E ) $ % = β Without degeneration: Simply set R E = 0 = R L g m + R L = r π + (β +)R L = r π + R th + β g m + R th β = β + = g m R L ß = g m =!" r o + g m R E # $ For the gain,, of the whole amplifier, you need to include voltage/ current dividers at input and output stages 2

2 Terminal Gain and I/O Resistances of MOS Amplifiers Source (CS) Drain (CD) Gate (CG) = g mr L + g m R S = = #$ r o + g m R E % & = Without degeneration: Simply set R S = 0 = = = g m = R L g m + R L = g m R L = g m =!" r o + g m R E # $ For the gain,, of the whole amplifier, you need to include voltage/ current dividers at input and output stages 3 Summary of Single-Transistor Amplifiers BJT MOS Ideal Voltage Amplifiers Emitter Emitter with Deg. Collector Base Moderate Large Large Small 0 Large Very Large Small Large A V Large Moderate ~ Large f H Small Moderate Large Large Ideal Voltage Amplifiers Source Source with Deg. Drain Gate Very Large Very Large Large Small 0 Large Very Large Small Large A V Moderate Small ~ Moderate f H Small Moderate Large Large 4 2

3 Need for Multistage Amplifiers Typical spec for a general purpose operational amplifier Input resistance ~ MΩ Output resistance ~ 00Ω Voltage gain ~ 00,000 No single transistor amplifier can satisfy the spec Cascading multiple stages of amplifiers to meet the spec Usually An input stage to provide required input resistance A middle stage(s) to provide gain An output stage to provide required output resistance It is important to note that the input resistance of the follow -on stage becomes the load of the previous stage 5 A 3-Stage ac-coupled Amplifier Circuit MOSFET M operating in the C-S configuration provides high input resistance and moderate voltage gain. BJT Q 2 in a C-E configuration, the second stage, provides high gain. BJT Q 3, an emitter-follower gives low output resistance and buffers the high gain stage from the relatively low value of load resistance. 6 3

4 A 3-Stage ac-coupled Amplifier Circuit Input and output of overall amplifier is ac-coupled through capacitors C and C 6. Bypass capacitors C 2 and C 4 are used to get maximum voltage gain from the two inverting amplifiers. Interstage coupling capacitors C 3 and C 5 transfer ac signals between amplifiers but provide isolation at dc and prevent Q-points of the transistors from being affected. In the ac equivalent circuit, bias resistors are replaced by R B2 = R R 2 and R B3 = R 3 R4 7 dc Equivalent Circuit Transistor Parameters M : K n =0 ma/v 2, V TN = 2 V, λ = 0.02V Q 2 : β F =50, V A = 80V, V BE = 0.7V Q 3 : β F = 80, V A = 60V, V BE = 0.7V At dc, the capacitors isolate each individual transistor stage from the others. Thus, the bias point for each transistor may be found using the single transistor analysis methods already discussed. Q - Points M : 5.00 ma, 0.9 V Q 2 :.57 ma, 5.09 V Q 3 :.99 ma, 8.36 V Small - Signal Parameters M : g m =0.0 ms, r o =2.2 kω Q 2 : g m2 = 62.8 ms, r π 2 = 2.39 kω, r o2 = 54.2 kω Q 3 : g m3 = 79.6 ms, r π 3 =.00 kω, r o3 = 34.4 kω 8 4

5 ac and Small-Signal Equivalent Circuits ac Equivalent Small-signal Equivalent 9 Input Resistance and Voltage Gain n A v = A vt3 A vt2 A vt R I + n A vt = v 2 = g m R L = 0.0S( 0.478kΩ) = 4.78 v R v = v in MΩ i = v i R I + n 0kΩ +MΩ = 0.990v i R I = 620Ω 7.2kΩ = 598Ω R I 2 = 4.7kΩ 5.8Ω = 4.3kΩ R I 3 = 3.3kΩ 250Ω = 232Ω R L = R I n2 = 598Ω r π 2 =598Ω 2390Ω = 478Ω n = R G =MΩ R L2 = R I 2 n3 = R I 2 [ r π 3 + ( β o3 +)R L3 ] =3.54kΩ A vt2 = v 3 = g m2 R L2 = 62.8S( 3.54kΩ) = 222 v 2 A vt3 = v o ( β o3 +)R L3 = = v 3 r π 3 + ( β o3 +)R L3 0 R G A v = A vt3 A vt2 A vt = +998 R I + R G 5

6 Output Resistance 3 = r π + R th + β g m + R th β R th = R I 2 r o2 = 4.3kΩ 54.2kΩ = 4kΩ 3 = 79.6mS + 4kΩ =2.6Ω+ 50Ω = 62.6Ω 80 ut = R E3 3 = 3.3kΩ 62.6Ω = 6.3Ω Current and Power Gain The input signal current delivered to the amplifier from source v i is v i i i = = 9.90x0 7 v i R I + n and the signal current delivered to the load resistor is i o = v o R L = A vv i 250Ω = 998v i 250Ω = 3.99v i Current Gain: Voltage Gain: Power Gain: A i = i o i i = 4.03x0 6 (32 db) A v = v o v i = 9.98x0 2 (60 db) A P = P o = v i o o = A v A i = 4.02x0 9 (96 db) P i v i i i 2 6

7 Input and Output Signal Range For the first stage: v 0.2( V GS V TN ) v i V For the second stage: v be2 = v 2 = A v v 5mV v 5mV A v v = V = 5mV 4.78 =.05mV v i.05mv =.06 mv 0.99 For the third stage: v be3 = A A 0.990v v v2 i 5mV + g m3 R L3 + g m3 R L3 v i + g m3r L3 A v A v mV = 92.7 µv = 92.7µV ( 92.7µV ) = 998( 92.7µV ) = 92.5 mv Overall: v i min 202mV,.06mV, 92.7µV v o A v SPICE Simulation Circuit 4 7

8 SPICE Simulation Results A v = 000 f L = 500 Hz f H = 500 khz 5 SPICE Simulation Results v in = 00 µv 6 8

9 SPICE Simulation Results v in = 750 µv 7 Short-Circuit Time Constant Estimate for f L An estimate for the lower cutoff frequency for an amplifier with multiple coupling and bypass capacitors is given by the sum of the reciprocals of the "short-circuit" time constants: f L 2π n i= S C i where S is the resistance at the terminals of the ith capacitor with all the other capacitors shorted. 8 9

10 Short-Circuit Time Constant Estimate for f L C : R S = R I + R G =.0 MΩ C 2 : R 2S = R S S = R S g m = 200Ω 0.0S = 66.7 Ω C 3 : R 3S = R D + R I B2 = R D + R I r π 2 = 620Ω+7.2kΩ 2.39kΩ = 2.72 kω C 4 : R 4S = R E 2 E 2 = R E 2 r π 2 + R th2 β o2 + C 5 : R 5S = R C + R I 2 B3 = R L + R I 2 r π 3 + g m3 R L3 2.39kΩ+7.2kΩ 0.620kΩ =.5kΩ =9.2 Ω 5 R 5S = 4.7kΩ+ 5.8kΩ.0kΩ"# S 232Ω $ % =8.9 kω C 6 : R 6S = R L + R E3 E3 = R L + R E3 r π 3 + R th3 β o3 +.0kΩ+ 5.8kΩ 4.7kΩ R 6S = 250Ω+ 3.3kΩ = 35 Ω 8 9 Short-Circuit Time Constant Estimate for f L f L 2π [.0MΩ 22µF Ω( 22µF) kΩ( 22µF) + 9.2Ω( 22µF) + ] = 5 Hz 35Ω( 22µF) + 8.9kΩ 22µF f L f H 20 0

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14 Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: -1.35 x 10 6 cm/s Page 58, last exercise,

More information

55:041 Electronic Circuits The University of Iowa Fall Final Exam

55:041 Electronic Circuits The University of Iowa Fall Final Exam Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered

More information

CE/CS Amplifier Response at High Frequencies

CE/CS Amplifier Response at High Frequencies .. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

Chapter 5. BJT AC Analysis

Chapter 5. BJT AC Analysis Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor

More information

MICROELECTRONIC CIRCUIT DESIGN Second Edition

MICROELECTRONIC CIRCUIT DESIGN Second Edition MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113

More information

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3 ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D. Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,

More information

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

6.012 Electronic Devices and Circuits Spring 2005

6.012 Electronic Devices and Circuits Spring 2005 6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

Electronics II. Final Examination

Electronics II. Final Examination The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11

More information

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller

More information

ESE319 Introduction to Microelectronics. Output Stages

ESE319 Introduction to Microelectronics. Output Stages Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R

More information

The Common-Emitter Amplifier

The Common-Emitter Amplifier c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram

More information

Bipolar junction transistors

Bipolar junction transistors Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

More information

ECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 =

ECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 = ECE 3050A, Spring 2004 Page Problem (20 points This problem must be attempted) The simplified schematic of a feedback amplifier is shown. Assume that all transistors are matched and g m ma/v and r ds.

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1 Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)

More information

Chapter 9 Frequency Response. PART C: High Frequency Response

Chapter 9 Frequency Response. PART C: High Frequency Response Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cut-off frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply

More information

Lecture 7: Transistors and Amplifiers

Lecture 7: Transistors and Amplifiers Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many

More information

ECEN 326 Electronic Circuits

ECEN 326 Electronic Circuits ECEN 326 Electronic Circuits Frequency Response Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering High-Frequency Model BJT & MOS B or G r x C f C or D r

More information

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 4-1 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation

More information

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

ESE319 Introduction to Microelectronics. BJT Biasing Cont. BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple

More information

Electronics II. Midterm #2

Electronics II. Midterm #2 The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm - StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm

More information

(Refer Slide Time: 1:49)

(Refer Slide Time: 1:49) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 14 Module no 01 Midband analysis of FET Amplifiers (Refer Slide

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

Problem Set 4 Solutions

Problem Set 4 Solutions University of California, Berkeley Spring 212 EE 42/1 Prof. A. Niknejad Problem Set 4 Solutions Please note that these are merely suggested solutions. Many of these problems can be approached in different

More information

Lecture 140 Simple Op Amps (2/11/02) Page 140-1

Lecture 140 Simple Op Amps (2/11/02) Page 140-1 Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and

More information

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically

More information

Lecture 18. Common Source Stage

Lecture 18. Common Source Stage ecture 8 OUTINE Basic MOSFET amplifier MOSFET biasing MOSFET current sources Common source amplifier eading: Chap. 7. 7.7. EE05 Spring 008 ecture 8, Slide Prof. Wu, UC Berkeley Common Source Stage λ =

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers 6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,

More information

Chapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support

Chapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support Chapter 3 Spring 2012 4 th Semester Mechatronics SZABIST, Karachi 2 Course Support humera.rafique@szabist.edu.pk Office: 100 Campus (404) Official: ZABdesk https://sites.google.com/site/zabistmechatronics/home/spring-2012/ecd

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors slamic University of Gaza Dr. Talal Skaik FETs vs. BJTs Similarities: Amplifiers Switching devices mpedance matching circuits Differences: FETs are voltage controlled

More information

Multistage Amplifier Frequency Response

Multistage Amplifier Frequency Response Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband

More information

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012 1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET D-FET (Depletion MOS) MOSFET (Enhancement E-FET) DC biasing Small signal

More information

FET Small-Signal Analysis

FET Small-Signal Analysis CHAPTER FET mall-ignal Analysis 9 9.1 INTROUCTION Field-effect transistor amplifiers provide an excellent voltage gain with the added feature of a high input impedance. They are also considered low-power

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Lecture 090 Multiple Stage Frequency Response - I (1/17/02) Page 090-1

Lecture 090 Multiple Stage Frequency Response - I (1/17/02) Page 090-1 Lecture 9 Multiple Stage Frequency esponse I (/7/2) Page 9 LECTUE 9 MULTIPLESTAGE FEQUENCY ESPONSE I (EADING: GHLM 56527) Objective The objective of this presentation is:.) Develop methods for the frequency

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C

More information

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and

More information

The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A =

The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = 10 10 4. Section Break Difficulty: Easy Learning Objective: Understand how real operational

More information

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET: Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I- curve (Square-Law Model)

More information

ENGN3227 Analogue Electronics. Problem Sets V1.0. Dr. Salman Durrani

ENGN3227 Analogue Electronics. Problem Sets V1.0. Dr. Salman Durrani ENGN3227 Analogue Electronics Problem Sets V1.0 Dr. Salman Durrani November 2006 Copyright c 2006 by Salman Durrani. Problem Set List 1. Op-amp Circuits 2. Differential Amplifiers 3. Comparator Circuits

More information

Electronics II. Midterm #1

Electronics II. Midterm #1 The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem

More information

The Miller Approximation

The Miller Approximation The Miller Approximation The exact analysis is not particularly helpful for gaining insight into the frequency response... consider the effect of C µ on the input only I t C µ V t g m V t R'out = r o r

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS ) ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets

More information

Frequency Response Prof. Ali M. Niknejad Prof. Rikky Muller

Frequency Response Prof. Ali M. Niknejad Prof. Rikky Muller EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:

More information

Analog Circuit Design Discrete & Integrated

Analog Circuit Design Discrete & Integrated This document contains the Errata for the textbook Analog Circuit Design Discrete & Integrated The Hardcover Edition (shown below at the left and published by McGraw-Hill Education) was preceded by a Spiral-Bound

More information

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59 Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors

More information

Refinements to Incremental Transistor Model

Refinements to Incremental Transistor Model Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes

More information

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2

More information

Switching circuits: basics and switching speed

Switching circuits: basics and switching speed ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V

More information

Lecture 150 Simple BJT Op Amps (1/28/04) Page 150-1

Lecture 150 Simple BJT Op Amps (1/28/04) Page 150-1 Lecture 50 Simple BJT Op Amps (/28/04) Page 50 LECTURE 50 SIMPLE BJT OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis

More information

CHAPTER 7 - CD COMPANION

CHAPTER 7 - CD COMPANION Chapter 7 - CD companion 1 CHAPTER 7 - CD COMPANION CD-7.2 Biasing of Single-Stage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and field-effect

More information

Philadelphia University Faculty of Engineering Communication and Electronics Engineering

Philadelphia University Faculty of Engineering Communication and Electronics Engineering Module: Electronics II Module Number: 6503 Philadelphia University Faculty o Engineering Communication and Electronics Engineering Ampliier Circuits-II BJT and FET Frequency Response Characteristics: -

More information

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of

More information

Estimation of Circuit Component Values in Buck Converter using Efficiency Curve

Estimation of Circuit Component Values in Buck Converter using Efficiency Curve ISPACS2017 Paper 2017 ID 21 Nov. 9 NQ-L5 Paper ID 21, Estimation of Circuit Component Values in Buck Converter using Efficiency Curve S. Sakurai, N. Tsukiji, Y. Kobori, H. Kobayashi Gunma University 1/36

More information

Charge-Storage Elements: Base-Charging Capacitance C b

Charge-Storage Elements: Base-Charging Capacitance C b Charge-Storage Elements: Base-Charging Capacitance C b * Minority electrons are stored in the base -- this charge q NB is a function of the base-emitter voltage * base is still neutral... majority carriers

More information

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits

More information

c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Feedback Amplifiers CollectionofSolvedProblems A collection of solved

More information

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in

More information

5. EXPERIMENT 5. JFET NOISE MEASURE- MENTS

5. EXPERIMENT 5. JFET NOISE MEASURE- MENTS 5. EXPERIMENT 5. JFET NOISE MEASURE- MENTS 5.1 Object The objects of this experiment are to measure the spectral density of the noise current output of a JFET, to compare the measured spectral density

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED

More information

ELECTRONICS IA 2017 SCHEME

ELECTRONICS IA 2017 SCHEME ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8

More information

Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory

Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory Electronic Circuits Prof. Dr. Qiuting Huang 6. Transimpedance Amplifiers, Voltage Regulators, Logarithmic Amplifiers, Anti-Logarithmic Amplifiers Transimpedance Amplifiers Sensing an input current ii in

More information