EE C245 ME C218 Introduction to MEMS Design
|
|
- Jeffery Lynch
- 5 years ago
- Views:
Transcription
1 EE C45 ME C18 Introduction to MEMS Design Fall 008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 6: Output t Sensing & MDS EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 1
2 Lecture Outline Reading: Senturia, Chpt. 6, Chpt. 14, Chpt. 16 Lecture Topics: Detection Circuits Position Sensing Velocity Sensing Gyro Circuit Modeling Minimum Detectable Signal (MDS) Noise Angle Random Walk (ARW) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08
3 MEMS-Based Tuning Fork Gyroscope Sense Electrodes Sense Ω r z Tuning Electrodes Drive Voltage Signal (-) Sense Output Current (+) Sense Output Current Tuning Electrodes Sense Electrodes Drive Electrode Drive [Zaman, Ayazi, et al, MEMS 06] Drive Oscillation Sustaining Amplifier Differential TransR Sense Amplifier EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 3
4 Drive Axis Equivalent Circuit 180 o 1:η e l x c x r x η e :1 i o C o1 x d C o Drive Voltage 180 o Signal i i Drive Oscillation Sustaining Amplifier Generates drive displacement velocity x d to which the Coriolis force is proportional To Sense Amplifier (for synchronization) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 4
5 Drive-to-Sense Transfer Function x& d x & d = ω x d d Am mplitude Drive/Sense Response Spectra: Drive Response Sense Response f o (@ T Drive Mode Driven 1 ) Velocity Ω ω x& s x& s = ω x s Sense Velocity s Sense Mode EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 5
6 r F c Gyro Readout Equivalent Circuit (for a single tine) Noise Sources r r r = mac = m ( x & d Ω ) i f F c l x c x f r x r x η e :1 i o v x i 0 ia C p ia - + R f v Gyro Sense Element Signal Conditioning Circuit Output Circuit (Transresistance Amplifier) Easiest to analyze if all noise sources are summed at a common node EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 6
7 r F c = Example: Gyro MDS Calculation (cont) r ma c = l x c x r r m ( x & Ω) f r x r x d η e :1 i o v F x& i v 0 c s eq C p eq - + R f Noiseless First, find the rotation to i o transfer function: EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 7
8 Example: Gyro MDS Calculation (cont) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 8
9 Scale Factor Stability EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 9
10 Gyro Project Design Procedure 1. Determine what approximate values of mass, stiffness, frequencies, etc., you will need to make the specs.. Choose a structure and technology, being mindful of scale factor stability and cost considerations. 3. Determine the dimensions, number of fingers, etc., needed for your structure to make the specs. Do this by hand analysis. 4. Draw up process cross-sections and write up the traveler. 5. Layout the structure. 6. Model the structure with equivalent circuits. 7. Simulate the equivalent circuits to verify performance. 8. Write your report. EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 10
11 Lecture Outline Reading: Senturia, Chpt. 6, Chpt. 14, Chpt. 16 Lecture Topics: Detection Circuits Position Sensing Velocity Sensing Gyro Circuit Modeling Minimum Detectable Signal (MDS) Noise Angle Random Walk (ARW) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 11
12 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 1
13 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 13
14 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 14
15 Position-to-Voltage Conversion To sense position (i.e., displacement), use a capacitive load C D EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 15
16 Position-to-Voltage Conversion To sense position (i.e., displacement), use a capacitive load C D EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 16
17 Velocity Sensing Circuits EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 17
18 Velocity-to-Voltage Conversion To convert velocity to a voltage, use a resistive load EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 18
19 Problems With Purely Resistive Sensing x b F d1 k 1 Ele ectrode d 1 d m e lectrod E i o C p R D v o i C C 1 1 v 1 V P Includes C o, line C, bond pad C, and next stage C EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 19
20 Problems With Purely Resistive Sensing x b In general, the sensor output must be connected to the F d1 k inputs of further signal 1 Ele ectrode d 1 d m e lectrod E conditioning circuits input R i of these circuits can load R D i o C p i C C 1 1 These change w/ hook-up not good. R D v o R i v 1 V P Problem: need a sensing circuit that is immune to parasitics or loading. Soln: use op amps. EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 0
21 F d1 The TransR Amplifier Advantage x b k The virtual ground provided by the ideal op amp eliminates the parasitic capacitance C p and R i R 1 Ele ectrode d 1 d e i i - m C p + = 0ΩΩ lectrod R ERo o The zero output resistance of the (ideal) op amp can i C C 1 1 v 1 di drive virtually it anything v 0 V P EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 1
22 Position Sensing Circuits EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08
23 Problems With Pure-C Position Sensing To sense position (i.e., displacement), use a capacitive load C D EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 3
24 F d1 Ele ectrode The Op Amp Integrator Advantage x d 1 d b k e C 1io - m lectrod E The virtual ground provided by the ideal op amp eliminates the parasitic capacitance C p R 1 R >> sc (for biasing) C p 0 + v i C C 1 1 v 1 V P EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 4
25 Differential Position Sensing EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 5
26 Differential Position Sensing Example: ADXL-50 Tethers with fixed ends Proof Mass Sense Finger C 1 C Fixed Electrodes V P Suspension Beam in Tension C 1 V o C -V P EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 6
27 Buffer-Bootstrapped Position Sensing +V P Includes capacitance from interconnects, bond pads, and C gs of the op amp v 0 C p C gd + - Unity Gain Buffer v 0 v0 -V P C gd = gate-to-drain capacitance of the input MOS transistor Bootstrap the ground lines around the interconnect and bond pads No voltage across C p It s effectively not there! Interconnect Ground Plane 1 EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 7
28 Effect of Finite Op Amp Gain +V P Total ADXL-50 Sense C ~ 100fF C p + C gd - Unity Gain Buffer v 0 -V P EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 8
29 Integrator-Based Diff. Position Sensing +V P R i o - C F 1 R >> sc (for biasing) C v0 p + -V P EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 9
30 Determining Sensor Resolution EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 30
31 MEMS-Based Tuning Fork Gyroscope Sense Electrodes Sense Ω r z Tuning Electrodes Drive Voltage Signal (-) Sense Output Current (+) Sense Output Current Tuning Electrodes Sense Electrodes Drive Electrode Drive [Zaman, Ayazi, et al, MEMS 06] Drive Oscillation Sustaining Amplifier Differential TransR Sense Amplifier EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 31
32 Drive Axis Equivalent Circuit 180 o 1:η e l x c x r x η e :1 i o C o1 x d C o Drive Voltage 180 o Signal i i Drive Oscillation Sustaining Amplifier Generates drive displacement velocity x d to which the Coriolis force is proportional To Sense Amplifier (for synchronization) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 3
33 Drive-to-Sense Transfer Function x& d x & d = ω x d d Am mplitude Drive/Sense Response Spectra: Drive Response Sense Response f o (@ T Drive Mode Driven 1 ) Velocity Ω ω x& s x& s = ω x s Sense Velocity s Sense Mode EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 33
34 r F c Gyro Readout Equivalent Circuit (for a single tine) Noise Sources r r r = mac = m ( x & d Ω ) i f F c l x c x f r x r x η e :1 i o v x i 0 ia C p ia - + R f v Gyro Sense Element Signal Conditioning Circuit Output Circuit (Transresistance Amplifier) Easiest to analyze if all noise sources are summed at a common node EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 34
35 Minimum Detectable Signal (MDS) Minimum Detectable Signal (MDS): Input signal level when the signal-to-noise ratio (SNR) is equal to unity Sensed Signal Sensor Scale Factor Circuit Gain Output t Sensor Noise Sensor Circuit Output Noise Signal Conditioning Circuit Includes desired output plus noise The sensor scale factor is governed by the sensor type The effect of noise is best determined via analysis of the equivalent circuit for the system EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 35
36 Move Noise Sources to a Common Point Move noise sources so that all sum at the input to the amplifier circuit (i.e., at the output of the sense element) Then, can compare the output of the sensed signal directly to the noise at this node to get the MDS Sensed Signal Sensor Scale Factor Circuit Gain Output Sensor Noise Sensor Circuit Input- Referred Noise Signal Conditioning Circuit Includes desired output plus noise EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 36
37 r F c Gyro Readout Equivalent Circuit (for a single tine) Noise Sources r r r = mac = m ( x & d Ω ) i f F c l x c x f r x r x η e :1 i o v x i 0 ia C p ia - + R f v Gyro Sense Element Signal Conditioning Circuit Output Circuit (Transresistance Amplifier) Easiest to analyze if all noise sources are summed at a common node EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 37
38 r F c Gyro Readout Equivalent Circuit (for a single tine) r r r = mac = m ( x & d Ω ) Noise Sources Noiseless l x c x f r r x r x η e :1 i o v F x i 0 c eq C p eq - + R f v Gyro Sense Element Output Circuit Signal Conditioning Circuit (Transresistance Amplifier) v eq i eq Here, and are equivalent input-referred voltage and current noise sources EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 38
39 Noise EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 39
40 Noise Noise: Random fluctuation of a given parameter I(t) In addition, a noise waveform has a zero average value Avg. value (e.g. could be DC current) I D I(t) t We can t handle noise at instantaneous times But we can handle some of the averaged effects of random fluctuations by giving noise a power spectral density representation Thus, represent noise by its mean-square value: Let i ( t ) = I ( t ) I D Then i 1 = ( I I ) = D lim I T T T 0 I D dt EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 40
41 Noise Spectral Density We can plot the spectral density of this mean-square value: i Δf [units /Hz] One-sided spectral density used in circuits measured by spectrum analyzers Two-sided spectral density (1/ the one-sided) d) Often used in systems courses i = integrated mean-square noise spectral density over all frequencies (area under the curve) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 41
42 Inputs Circuit Noise Calculations Deterministic Outputs v i ( jω) ) ( jω) ) H ( jω) S i (ω ) S o o( (ω ) Deterministic: Random: Linear Time-Invariant System Random v π v o (t) ( jω) ω o v o t ω ( jω) H ( jω) v ( jω) o = i v o ω ο S o (t) S ( jω) ) t S o ω ο Mean square spectral density * Random: S ( ω ) = [ H ( j ω ) H ( j ω )] S ( ω ) = H ( j ω ) S ( ω ) o i S ( ω) = H ( jω) S ( ω) How is it we o Root mean square amplitudes i can do this? EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 4 i ω
43 Handling Noise Deterministically Can do this for noise in a tiny bandwidth (e.g., 1 Hz) S n v n n 1 = S1 ( f Δf ω ο B ( jω) ) ω Can approximate this v = S ( f ) B v n 1 S S o i 1 ( ω ο ω ω o ω [This is actually the principle by which oscillators work oscillators are just noise going through a tiny bandwidth filter] B by a sinusoidal voltage generator (especially for small B, say 1 Hz) v o τ ~ (t) 1 B A cosω t Why? Neither the amplitude nor the phase of a signal can change appreciably within a time period 1/B. EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 43 o t
44 Systematic Noise Calculation Procedure H ( jω) H5( jω) General Circuit With Wth Several Noise Sources v n i n1 v n3 i n5 i n4 v n6 v on H1( jω) Assume noise sources are uncorrelated 1. For i n1, replace w/ a deterministic source of value in1 n 1 = i Δff (1Hz) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 44
45 Systematic Noise Calculation Procedure v 1( ω) i 1( ω) H ( jω). Calculate n (treating it like a deterministic signal) 3. Determine on = v on1 = in1 H ( jω) 4. Repeat for each noise source:,, i n1 1 v n n3. p f,,v n3 5. Add noise power (mean square values) v ontot = v on1 + v on + v on3 + v on4 +L v ontot = v on1 + von + von3 + von4 +L Total rms value EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 45
46 Determining Sensor Resolution EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 46
47 r F c = r ma c Example: Gyro MDS Calculation = l x c x r r m ( x & Ω) f r x r x d η e :1 i o v F x& i v 0 c s eq C p eq - + R f Noiseless The gyro sense presents a large effective source impedance Currents are the important variable; voltages are opened out Must compare i o with the total current noise i eqtot going into the amplifier circuit EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 47
48 r F c = Example: Gyro MDS Calculation (cont) r ma c = l x c x r r m ( x & Ω) f r x r x d η e :1 i o v F x& i v 0 c s eq C p eq - + R f Noiseless First, find the rotation to i o transfer function: EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 48
49 Example: Gyro MDS Calculation (cont) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 49
50 r F c = Example: Gyro MDS Calculation (cont) r ma c = l x c x r r m ( x & Ω) f r x r x d η e :1 i o v F x& i v 0 c s eq C p eq - + R f Noiseless Now, find the i eqtot entering the amplifier input: EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 50
51 Example: Gyro MDS Calculation (cont) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 51
52 LF356 Op Amp Data Sheet EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 5
53 Example ARW Calculation Example Design: Sensor Element: m = (100μm)(100μm)(0μm)(300kg/m )(0 )(300k 3 ) = 4.6x10-10 kg ω s = π(15khz) ω d = π(10khz) k s = ω s m = 4.09 N/m Sense Sense x d = 0 μm Electrodes 000 r Q s = 50,000 Ω z V P = 5V h = 0 μm d = 1 μm Sensing Circuitry: R f = 100kΩ i ia = 0.01 pa/ Hz v ia = 1 nv/ Hz Tuning Electrodes Sense Electrodes Tuning Electrodes Drive Electrode EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 53 Drive
54 Example ARW Calculation (cont) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 54
55 Example ARW Calculation (cont) EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 55
56 What if ω d = ω s? EE C45: Introduction to MEMS Design Lecture 6 C. Nguyen 1//08 56
EE C245 ME C218 Introduction to MEMS Design Fall 2011
EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C245 ME C218 Introduction to MEMS Design
EE C45 ME C8 Introduction to MEMS Design Fall 007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 5: Output t
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 20: Equivalent
More informationEE C245 ME C218 Introduction to MEMS Design
EE C45 ME C8 Introduction to MEMS Deign Fall 007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Science Univerity of California at Berkeley Berkeley, CA 9470 Lecture 5: Output t Sening
More informationEE 247B/ME 218: Introduction to MEMS Design Lecture 26m1: Noise & MDS CTN 4/25/17. Copyright 2017 Regents of the University of California
EE 47B/ME 18: Introduction to MEMS Design Lecture 6m1: & MDS CTN 4/5/17 Thermal Sources Thermal in Electronics: (Johnson noise, Nyquist noise) Produced as a result of the thermally excited random motion
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C45 ME C8 Introduction to MEMS Design Fall 007 Prof. Clark T.C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 3: Input Modeling
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2012
EE C245 ME C218 Introduction to MEMS Design Fall 2012 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 17: Energy
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 19: Resonance
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2011 C. Nguyen PROBLEM SET #7. Table 1: Gyroscope Modeling Parameters
Issued: Wednesday, Nov. 23, 2011. PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 8, 2011, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 23: Electrical
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 21: Gyros
More informationLast Name _Di Tredici_ Given Name _Venere_ ID Number
Last Name _Di Tredici_ Given Name _Venere_ ID Number 0180713 Question n. 1 Discuss noise in MEMS accelerometers, indicating the different physical sources and which design parameters you can act on (with
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.
Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 22: Capacitive
More informationELEN 610 Data Converters
Spring 04 S. Hoyos - EEN-60 ELEN 60 Data onverters Sebastian Hoyos Texas A&M University Analog and Mixed Signal Group Spring 04 S. Hoyos - EEN-60 Electronic Noise Signal to Noise ratio SNR Signal Power
More informationE09 Gyroscope Sense Design
POLITECNICO DI MILANO MSC COURSE - MEMS AND MICROSENSORS - 07/08 E09 Gyroscope Sense Design Paolo Minotti 3/0/07 In this class we will learn how to design the readout electronics of a MEMS gyroscope, with
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 13: Material
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationDesign of Analog Integrated Circuits
Design of Analog Integrated Circuits Chapter 11: Introduction to Switched- Capacitor Circuits Textbook Chapter 13 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More information6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers
6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers Michael Perrott Massachusetts Institute of Technology March 8, 2005 Copyright 2005 by Michael H. Perrott Notation for Mean,
More informationStability and Frequency Compensation
類比電路設計 (3349) - 2004 Stability and Frequency ompensation hing-yuan Yang National hung-hsing University Department of Electrical Engineering Overview Reading B Razavi hapter 0 Introduction In this lecture,
More informationE08 Gyroscope Drive Design
POLITECNICO DI MILANO MSC COURSE - MEMS AND MICROSENSORS - 207/208 E08 Gyroscope Drive Design Paolo Minotti 26/0/207 PROBLEM We have to design the electronic circuit needed to sustain the oscillation of
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationTransistor Noise Lecture 10 High Speed Devices
Transistor Noise 1 Transistor Noise A very brief introduction to circuit and transistor noise. I an not an expert regarding noise Maas: Noise in Linear and Nonlinear Circuits Lee: The Design of CMOS RFIC
More informationECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION
ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanical
More informationFrequency Response Prof. Ali M. Niknejad Prof. Rikky Muller
EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:
More informationProblem Set 4 Solutions
University of California, Berkeley Spring 212 EE 42/1 Prof. A. Niknejad Problem Set 4 Solutions Please note that these are merely suggested solutions. Many of these problems can be approached in different
More informationChapter 10 Feedback. PART C: Stability and Compensation
1 Chapter 10 Feedback PART C: Stability and Compensation Example: Non-inverting Amplifier We are analyzing the two circuits (nmos diff pair or pmos diff pair) to realize this symbol: either of the circuits
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 15: Beam
More informationSchedule. ECEN 301 Discussion #20 Exam 2 Review 1. Lab Due date. Title Chapters HW Due date. Date Day Class No. 10 Nov Mon 20 Exam Review.
Schedule Date Day lass No. 0 Nov Mon 0 Exam Review Nov Tue Title hapters HW Due date Nov Wed Boolean Algebra 3. 3.3 ab Due date AB 7 Exam EXAM 3 Nov Thu 4 Nov Fri Recitation 5 Nov Sat 6 Nov Sun 7 Nov Mon
More informationTransistor Noise Lecture 14, High Speed Devices
Transistor Noise 016-03-03 Lecture 14, High Speed Devices 016 1 Transistor Noise A very brief introduction 016-03-0 Lecture 13, High Speed Devices 016 Summary hybrid p Noise is a randomly varying voltage/current
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2016
EE C47B ME C18 Introduction to MEMS Design Spring 016 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture EE C45:
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationEE 247B/ME 218: Introduction to MEMS Design Lecture 27m2: Gyros, Noise & MDS CTN 5/1/14. Copyright 2014 Regents of the University of California
MEMSBase Fork Gyrosoe Ω r z Volage Deermnng Resoluon EE C45: Inrouon o MEMS Desgn LeM 15 C. Nguyen 11/18/08 17 () Curren (+) Curren Eleroe EE C45: Inrouon o MEMS Desgn LeM 15 C. Nguyen 11/18/08 18 [Zaman,
More informationEE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 - ME C8 Introduction to MEMS Design Fall 3 Roger Howe and Thara Srinivasan Lecture 9 Energy Methods II Today s Lecture Mechanical structures under driven harmonic motion develop analytical techniques
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------
More informationOPERATIONAL AMPLIFIER APPLICATIONS
OPERATIONAL AMPLIFIER APPLICATIONS 2.1 The Ideal Op Amp (Chapter 2.1) Amplifier Applications 2.2 The Inverting Configuration (Chapter 2.2) 2.3 The Non-inverting Configuration (Chapter 2.3) 2.4 Difference
More informationSwitched-Capacitor Circuits David Johns and Ken Martin University of Toronto
Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually
More informationDESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C
MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OP-AMP It consists of two stages: First
More informationLecture 23: Negative Resistance Osc, Differential Osc, and VCOs
EECS 142 Lecture 23: Negative Resistance Osc, Differential Osc, and VCOs Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California,
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Oldham Fall 1999
UNIVERSITY OF CLIFORNI College of Engineering Department of Electrical Engineering and Computer Sciences Professor Oldham Fall 1999 EECS 40 FINL EXM 13 December 1999 Name: Last, First Student ID: T: Kusuma
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More information0 t < 0 1 t 1. u(t) =
A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 13 p. 22/33 Step Response A unit step function is described by u(t) = ( 0 t < 0 1 t 1 While the waveform has an artificial jump (difficult
More informationChapter 2 Switched-Capacitor Circuits
Chapter 2 Switched-Capacitor Circuits Abstract his chapter introduces SC circuits. A brief description is given for the main building blocks of a SC filter (operational amplifiers, switches, capacitors,
More informationLecture 14: Electrical Noise
EECS 142 Lecture 14: Electrical Noise Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2008 by Ali M. Niknejad A.M.Niknejad University of California, Berkeley EECS 142 Lecture 14 p.1/20
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 16: Energy
More informationCapacitive Sensor Interfaces
Capacitive Sensor Interfaces Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Capacitive Sensor Interfaces 1996
More informationLecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005
6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier December, 2005 Contents:. Introduction 2. Intrinsic frequency response
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationLecture 23: NorCal 40A Power Amplifier. Thermal Modeling.
Whites, EE 322 Lecture 23 Page 1 of 13 Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Recall from the last lecture that the NorCal 40A uses a Class C power amplifier. From Fig. 10.3(b) the collector
More informationLast Name Minotti Given Name Paolo ID Number
Last Name Minotti Given Name Paolo ID Number 20180131 Question n. 1 Draw and describe the simplest electrical equivalent model of a 3-port MEMS resonator, and its frequency behavior. Introduce possible
More informationSWITCHED CAPACITOR AMPLIFIERS
SWITCHED CAPACITOR AMPLIFIERS AO 0V 4. AO 0V 4.2 i Q AO 0V 4.3 Q AO 0V 4.4 Q i AO 0V 4.5 AO 0V 4.6 i Q AO 0V 4.7 Q AO 0V 4.8 i Q AO 0V 4.9 Simple amplifier First approach: A 0 = infinite. C : V C = V s
More informationHomework 6 Solutions and Rubric
Homework 6 Solutions and Rubric EE 140/40A 1. K-W Tube Amplifier b) Load Resistor e) Common-cathode a) Input Diff Pair f) Cathode-Follower h) Positive Feedback c) Tail Resistor g) Cc d) Av,cm = 1/ Figure
More informationGuest Lectures for Dr. MacFarlane s EE3350
Guest Lectures for Dr. MacFarlane s EE3350 Michael Plante Sat., -08-008 Write name in corner.. Problem Statement Amplifier Z S Z O V S Z I Z L Transducer, Antenna, etc. Coarse Tuning (optional) Amplifier
More informationLast Name _Piatoles_ Given Name Americo ID Number
Last Name _Piatoles_ Given Name Americo ID Number 20170908 Question n. 1 The "C-V curve" method can be used to test a MEMS in the electromechanical characterization phase. Describe how this procedure is
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam
More informationIntroduction to CMOS RF Integrated Circuits Design
V. Voltage Controlled Oscillators Fall 2012, Prof. JianJun Zhou V-1 Outline Phase Noise and Spurs Ring VCO LC VCO Frequency Tuning (Varactor, SCA) Phase Noise Estimation Quadrature Phase Generator Fall
More informationThe Approximating Impedance
Georgia Institute of Technology School of Electrical and Computer Engineering ECE 4435 Op Amp Design Laboratory Fall 005 DesignProject,Part A White Noise and Pink Noise Generator The following explains
More informationTwo-Port Noise Analysis
Berkeley Two-Port Noise Analysis Prof. Ali M. Niknejad U.C. Berkeley Copyright c 2015 by Ali M. Niknejad 1/26 Equivalent Noise Generators v 2 n Noisy Two-Port i 2 n Noiseless Two-Port Any noisy two port
More informationFrequency Dependent Aspects of Op-amps
Frequency Dependent Aspects of Op-amps Frequency dependent feedback circuits The arguments that lead to expressions describing the circuit gain of inverting and non-inverting amplifier circuits with resistive
More informationHomework Assignment 11
Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuous-time active filters. (3 points) Continuous time filters use resistors
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: E-mail: info@madeeasy.in Ph: 0-4546 CLASS TEST 08-9 ELECTCAL ENGNEENG Subject
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and
More informationClass E Design Formulas V DD
Class E Design Formulas V DD RFC C L+X/ω V s (θ) I s (θ) Cd R useful functions and identities Units Constants Table of Contents I. Introduction II. Process Parameters III. Inputs IV. Standard Class E Design
More informationECE 255, Frequency Response
ECE 255, Frequency Response 19 April 2018 1 Introduction In this lecture, we address the frequency response of amplifiers. This was touched upon briefly in our previous lecture in Section 7.5 of the textbook.
More informationMultistage Amplifier Frequency Response
Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband
More informationECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp
ECE 34: Design Issues for oltage Follower as Output Stage S&S Chapter 14, pp. 131133 Introduction The voltage follower provides a good buffer between a differential amplifier and a load in two ways: 1.
More informationLecture 6 Power Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010
EE4800 CMOS Digital IC Design & Analysis Lecture 6 Power Zhuo Feng 6.1 Outline Power and Energy Dynamic Power Static Power 6.2 Power and Energy Power is drawn from a voltage source attached to the V DD
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes
More informationPOWER SUPPLY INDUCED JITTER MODELING OF AN ON- CHIP LC OSCILLATOR. Shahriar Rokhsaz, Jinghui Lu, Brian Brunn
POWER SUPPY INDUED JITTER MODEING OF AN ON- HIP OSIATOR Shahriar Rokhsaz, Jinghui u, Brian Brunn Rockethips Inc. (A Xilinx, Inc. Division) ABSTRAT This paper concentrates on developing a closed-form small
More informationLecture 12 CMOS Delay & Transient Response
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 12 CMOS Delay & Transient Response Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology
More informationPHYS225 Lecture 9. Electronic Circuits
PHYS225 Lecture 9 Electronic Circuits Last lecture Field Effect Transistors Voltage controlled resistor Various FET circuits Switch Source follower Current source Similar to BJT Draws no input current
More informationTopics to be Covered. capacitance inductance transmission lines
Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of
More informationVLSI GATE LEVEL DESIGN UNIT - III P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI UNIT - III GATE LEVEL DESIGN P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) contents GATE LEVEL DESIGN : Logic Gates and Other complex gates, Switch logic, Alternate gate circuits, Time Delays, Driving large
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2010
EE C245 ME C218 Introduction to MEMS Design Fall 2010 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationOutput high order sliding mode control of unity-power-factor in three-phase AC/DC Boost Converter
Output high order sliding mode control of unity-power-factor in three-phase AC/DC Boost Converter JianXing Liu, Salah Laghrouche, Maxim Wack Laboratoire Systèmes Et Transports (SET) Laboratoire SeT Contents
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationVoltage AmpliÞer Frequency Response
Voltage AmpliÞer Frequency Response Chapter 9 multistage voltage ampliþer 5 V M 7B M 7 M 5 R 35 kω M 6B M 6 Q 4 100 µa X M 3 Q B Q v OUT V s M 1 M 8 M9 V BIAS M 10 Approaches: 1. brute force OCTC -- do
More informationE40M. Op Amps. M. Horowitz, J. Plummer, R. Howe 1
E40M Op Amps M. Horowitz, J. Plummer, R. Howe 1 Reading A&L: Chapter 15, pp. 863-866. Reader, Chapter 8 Noninverting Amp http://www.electronics-tutorials.ws/opamp/opamp_3.html Inverting Amp http://www.electronics-tutorials.ws/opamp/opamp_2.html
More informationCommon Drain Stage (Source Follower) Claudio Talarico, Gonzaga University
Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C
More informationBiosensors and Instrumentation: Tutorial 2
Biosensors and Instrumentation: Tutorial 2. One of the most straightforward methods of monitoring temperature is to use the thermal variation of a resistor... Suggest a possible problem with the use of
More informationLecture 140 Simple Op Amps (2/11/02) Page 140-1
Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationPreamplifier in 0.5µm CMOS
A 2.125 Gbaud 1.6kΩ Transimpedance Preamplifier in 0.5µm CMOS Sunderarajan S. Mohan Thomas H. Lee Center for Integrated Systems Stanford University OUTLINE Motivation Shunt-peaked Amplifier Inductor Modeling
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationECE Circuit Theory. Final Examination. December 5, 2008
ECE 212 H1F Pg 1 of 12 ECE 212 - Circuit Theory Final Examination December 5, 2008 1. Policy: closed book, calculators allowed. Show all work. 2. Work in the provided space. 3. The exam has 3 problems
More informationSolved Problems. Electric Circuits & Components. 1-1 Write the KVL equation for the circuit shown.
Solved Problems Electric Circuits & Components 1-1 Write the KVL equation for the circuit shown. 1-2 Write the KCL equation for the principal node shown. 1-2A In the DC circuit given in Fig. 1, find (i)
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationHow we wanted to revolutionize X-ray radiography, and how we then "accidentally" discovered single-photon CMOS imaging
How we wanted to revolutionize X-ray radiography, and how we then "accidentally" discovered single-photon CMOS imaging Stanford University EE Computer Systems Colloquium February 23 rd, 2011 EE380 Peter
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More informationECE 201 Fall 2009 Final Exam
ECE 01 Fall 009 Final Exam December 16, 009 Division 0101: Tan (11:30am) Division 001: Clark (7:30 am) Division 0301: Elliott (1:30 pm) Instructions 1. DO NOT START UNTIL TOLD TO DO SO.. Write your Name,
More information