EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

Size: px
Start display at page:

Download "EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)"

Transcription

1 EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu 5 Sutardja Dai Hall (SDH)

2 Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband gain A mid and upper and lower cutoff frequencies ω H and ω L that define bandwidth of an amplifier are often of more interest than the complete transfer function Coupling and bypass capacitors (~ μμf) determine ω L Transistor (and stray) capacitances (~ pf) determine ω H

3 Lower Cutoff Frequency (ω L ) Approximation: Short-Circuit Time Constant (SCTC) Method. Identify all coupling and bypass capacitors 2. Pick one capacitor (CC ii ) at a time, replace all others with short circuits 3. Replace independent voltage source with short, and independent current source with open 4. Calculate the resistance (RR iiss ) in parallel with CC ii 5. Calculate the time constant, RR iiii CC ii 6. Repeat this for each of the n capacitor 7. The low cut-off frequency can be approximated by n ω L R is C i i= Note: this is an approximation. The real low cut-off is slightly lower

4 Lower Cutoff Frequency (ω L ) Using SCTC Method for CS Amplifier SCTC Method: f L n 2π i= R is C i For the Common-Source Amplifier: f L # % 2π $ R S C + + R 2S C 2 R 3S C 3 & ( '

5 Lower Cutoff Frequency (ω L ) Using SCTC Method for CS Amplifier Using the SCTC method: f L " $ 2π # R S C + + R 2S C 2 R 3S C 3 % ' & For C 2 : R 3S = R 3 + R D ( R id ) = R 3 + R D r o ( ) For C : R S = R I + R G ( R ig ) = R I + R G For C 3 : R 2S = R S R is = R S g m

6 Design: How Do We Choose the Coupling and Bypass Capacitor Values? Since the impedance of a capacitor increases with decreasing frequency, coupling/bypass capacitors reduce amplifier gain at low frequencies. To choose capacitor values, the short-circuit time constant (SCTC) method is used: each capacitor is considered separately with all other capacitors replaced by short circuits. To be able to neglect a capacitor at a given frequency, the magnitude of the capacitor s impedance must be much smaller than the equivalent resistance appearing at its terminals at that frequency

7 Coupling and Bypass Capacitor Design Common-Source Amplifiers For the C-S Amplifier: R in = R G R in CS For coupling capacitor C : C >> ( ) ω R I + R in For coupling capacitor C 3 : C 2 >> ( ) ω R 3 + R out R out = R D CS R out

8 Lower Cutoff Frequency f L Dominant Pole Design Instead of having the lower cutoff frequency set by the interaction of several poles, it can be set by the pole associated with just one of the capacitors. The other capacitors are then chosen to have their pole frequencies much below f L. The capacitor associated with the emitter or source part of the circuit tends to be the largest due to low resistance presented by emitter or source terminal of transistor and is commonly used to set f L. Values of other capacitors are increased by a factor of 0 to push their corresponding poles to much lower frequencies.

9 Capacitively Coupled CS Amplifier Find the pole frequency associated with each coupling/bypass capacitor:

10 Low Frequency Response Figure 0.7 Sketch of the low-frequency magnitude response of a CS amplifier for which the three pole frequencies are sufficiently separated for their effects to appear distinct.

11 High Frequency Response

12 Capacitors in MOS Device C gs = (2 / 3)WLC ox + C ov C gd = C ov C sb = C jsb (area + perimeter) junction C db = C jdb (area + perimeter) junction

13 (Simplified) High-Frequency Equivalent-Circuit Model for MOSFET Capacitances between source/body, C sb, and between drain/body, C db, are neglected

14 Intrinsic Response of FET: Unity-Gain Frequency, f T f T : defined as frequency at which short-circuit current gain = f T : a figure-of-merit for transistor speed V gs = KCL: I o + I i sc gs + sc gd V gs / sc gd = g m V gs I o = g m V gs sc gd V gs g m V gs = g m I i sc gs + sc gd Drain is grounded (short-circuit load) As gate length reduces in advanced technology node, C gs reduces and f T increases A I = I o I i = s = jω I o I i = ω T = g m sc gs + sc gd g m ω(c gs + C gd ) g m C gs + C gd

15 Common-Source Voltage Amplifier Small-signal model: C sb is connected to ground on both sides, therefore can be ignored R S Can solve problem directly by nodal analysis or using 2-port models of transistor OK if circuit is small (-2 nodes) We can find the complete transfer function of the circuit, but in many cases it s good enough to get an estimate of the -3dB bandwidth

16 CS Voltage Amp Small-Signal Model Two Nodes! Easy For now we will ignore C db to simplify the math

17 Frequency Response KCL at input and output nodes;; analysis is made complicated V out = g m r o R L V in + jω /ω p [ ]( jω /ω z ) ( )( + jω /ω ) p2 Zero Low-frequency gain: ( ) ( )( + j0) V out = g r R m o L j0 V in + j0 g m Two Poles r o R L Zero: ω z = g m C gs + C gd

18 Calculating the Poles ω p ω p2 { } + R s C gs + ( + g m R out )C gd R out / R S R S C gs + ( + g m R out )C gd { } + R out C gd R out C gd Usually >> Results of complete analysis: not exact and little insight These poles are calculated after doing some algebraic manipulations on the circuit. It s hard to get any intuition from the above expressions. There must be an easier way!

19 Method: The Miller Effect

20 The Miller Effect

21 Using The Miller Effect Effective input capacitance: C in = jωc Miller = A v,cgd jωc gd = jω ( A vcgd )C gd

22 CS Voltage Amp Small-Signal Model Modified Small-Signal Model with Miller Effect: C gs +C Miller We can approximate the first pole by using Miller capacitance This gives us a good approximation of the -3dB bandwidth

23 Comparison with Exact Analysis Miller result (calculate RC time constant of input pole): Exact result: ω p ω p = R S C gs + ( + g m R out ʹ )C gd = R S C gs + ( + g m R out ʹ )C gd + R out ʹ C gd As a result of the Miller effect there is a fundamental gain-bandwidth tradeoff

24 Common Drain Amplifier Calculate Bandwidth of the Common Drain (Source- Follower) Procedure:. Replace current source with MOSFET-based current mirror 2. Draw small-signal model with capacitors (for simplicity, we will focus on C gd and C gs ) 3. Find the DC small-signal gain 4. Use the Miller effect to calculate the input capacitance 5. Calculate the dominant pole

25 Small-Signal Model with Capacitors R S Find DC Gain Find Miller capacitor for C gs -- note that the gatesource capacitor is between the input and output!

26 Voltage Gain Across C gs Write KCL at output node: v out r o r oc = g m v gs = g m (v in v out ) v out + g m r o r = g v m in oc v out v in = r o g m + g r m oc = g m (r o r oc ) + g m (r o r oc ) = A vcgs

27 Compute Miller Effected Capacitance Now use the Miller Effect to compute C in : Remember that C gs is the capacitor from the input to the output R S C in = C gd + C M C in = C gd + ( A vcgs )C gs Miller Cap C in = C gd + ( g m (r o r oc ) + g m (r o r oc ) )C gs C in = C gd + ( + g m (r o r oc ) )C gs C in C gd (for large g m (r o //r oc ))

28 Bandwidth of Source Follower Input low-pass filter s 3 db frequency: C ω p = R S C gd + gs + g m (r o r oc ) Substitute favorable values of R S, r o : R» / S g m ω p / g m ( ) C gd + C gs r o >>/ g m C gd / g m + BIG ω p g m / C gd Very high frequency! Model not valid at these high frequencies

29 Common Source Amplifier: Some Examples A vcgd = Negative, large number (-00) C Miller = ( A V,Cgd )C gd 00C gd Miller Multiplied Cap has detrimental impact on bandwidth Common Drain Amplifier: A vcgs = Slightly less than C Miller = ( A V,Cgs )C gs! 0 Bootstrapped cap has negligible impact on bandwidth!

Frequency Response Prof. Ali M. Niknejad Prof. Rikky Muller

Frequency Response Prof. Ali M. Niknejad Prof. Rikky Muller EECS 105 Spring 2017, Module 4 Frequency Response Prof. Ali M. Niknejad Department of EECS Announcements l HW9 due on Friday 2 Review: CD with Current Mirror 3 Review: CD with Current Mirror 4 Review:

More information

Chapter 9 Frequency Response. PART C: High Frequency Response

Chapter 9 Frequency Response. PART C: High Frequency Response Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cut-off frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance

More information

EE105 Fall 2014 Microelectronic Devices and Circuits

EE105 Fall 2014 Microelectronic Devices and Circuits EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

More information

CE/CS Amplifier Response at High Frequencies

CE/CS Amplifier Response at High Frequencies .. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D. Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,

More information

I. Frequency Response of Voltage Amplifiers

I. Frequency Response of Voltage Amplifiers I. Frequency Response of Voltage Amplifiers A. Common-Emitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o --->, r oc --->, R L ---> Find V BIAS such that I C

More information

Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005

Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier. December 1, 2005 6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 Lecture 23 Frequency Response of Amplifiers (I) Common Source Amplifier December, 2005 Contents:. Introduction 2. Intrinsic frequency response

More information

ECE 546 Lecture 11 MOS Amplifiers

ECE 546 Lecture 11 MOS Amplifiers ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase

More information

The Miller Approximation

The Miller Approximation The Miller Approximation The exact analysis is not particularly helpful for gaining insight into the frequency response... consider the effect of C µ on the input only I t C µ V t g m V t R'out = r o r

More information

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

ECE 255, Frequency Response

ECE 255, Frequency Response ECE 255, Frequency Response 19 April 2018 1 Introduction In this lecture, we address the frequency response of amplifiers. This was touched upon briefly in our previous lecture in Section 7.5 of the textbook.

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

ECEN 326 Electronic Circuits

ECEN 326 Electronic Circuits ECEN 326 Electronic Circuits Frequency Response Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering High-Frequency Model BJT & MOS B or G r x C f C or D r

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Lecture 23 - Frequency Resp onse of Amplifiers (I) Common-Source Amplifier. May 6, 2003

Lecture 23 - Frequency Resp onse of Amplifiers (I) Common-Source Amplifier. May 6, 2003 6.0 Microelectronic Devices and Circuits Spring 003 Lecture 3 Lecture 3 Frequency Resp onse of Amplifiers (I) CommonSource Amplifier May 6, 003 Contents:. Intro duction. Intrinsic frequency resp onse of

More information

6.012 Electronic Devices and Circuits Spring 2005

6.012 Electronic Devices and Circuits Spring 2005 6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):

More information

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET: Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I- curve (Square-Law Model)

More information

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2

More information

Exact Analysis of a Common-Source MOSFET Amplifier

Exact Analysis of a Common-Source MOSFET Amplifier Exact Analysis of a Common-Source MOSFET Amplifier Consider the common-source MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel

More information

Multistage Amplifier Frequency Response

Multistage Amplifier Frequency Response Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model

ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1

More information

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C

More information

University of Toronto. Final Exam

University of Toronto. Final Exam University of Toronto Final Exam Date - Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last

More information

Refinements to Incremental Transistor Model

Refinements to Incremental Transistor Model Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

Voltage AmpliÞer Frequency Response

Voltage AmpliÞer Frequency Response Voltage AmpliÞer Frequency Response Chapter 9 multistage voltage ampliþer 5 V M 7B M 7 M 5 R 35 kω M 6B M 6 Q 4 100 µa X M 3 Q B Q v OUT V s M 1 M 8 M9 V BIAS M 10 Approaches: 1. brute force OCTC -- do

More information

Lecture Stage Frequency Response - I (1/10/02) Page ECE Analog Integrated Circuits and Systems II P.E.

Lecture Stage Frequency Response - I (1/10/02) Page ECE Analog Integrated Circuits and Systems II P.E. Lecture 070 Stage Frequency esponse I (/0/0) Page 070 LECTUE 070 SINGLESTAGE FEQUENCY ESPONSE I (EADING: GHLM 488504) Objective The objective of this presentation is:.) Illustrate the frequency analysis

More information

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +

More information

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller

More information

Advanced Current Mirrors and Opamps

Advanced Current Mirrors and Opamps Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2011

EE C245 ME C218 Introduction to MEMS Design Fall 2011 EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:

More information

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities:

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities: Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: n-type (favor e-), p-type (favor holes) for conduction Whereas the diode was a -junction

More information

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers 6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,

More information

EE 40: Introduction to Microelectronic Circuits Spring 2008: Midterm 2

EE 40: Introduction to Microelectronic Circuits Spring 2008: Midterm 2 EE 4: Introduction to Microelectronic Circuits Spring 8: Midterm Venkat Anantharam 3/9/8 Total Time Allotted : min Total Points:. This is a closed book exam. However, you are allowed to bring two pages

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors slamic University of Gaza Dr. Talal Skaik FETs vs. BJTs Similarities: Amplifiers Switching devices mpedance matching circuits Differences: FETs are voltage controlled

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

Electronics II. Final Examination

Electronics II. Final Examination The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

55:041 Electronic Circuits The University of Iowa Fall Final Exam

55:041 Electronic Circuits The University of Iowa Fall Final Exam Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered

More information

Homework 6 Solutions and Rubric

Homework 6 Solutions and Rubric Homework 6 Solutions and Rubric EE 140/40A 1. K-W Tube Amplifier b) Load Resistor e) Common-cathode a) Input Diff Pair f) Cathode-Follower h) Positive Feedback c) Tail Resistor g) Cc d) Av,cm = 1/ Figure

More information

(Refer Slide Time: 1:49)

(Refer Slide Time: 1:49) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 14 Module no 01 Midband analysis of FET Amplifiers (Refer Slide

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED

More information

Digital Microelectronic Circuits ( )

Digital Microelectronic Circuits ( ) Digital Microelectronic ircuits (361-1-3021 ) Presented by: Dr. Alex Fish Lecture 5: Parasitic apacitance and Driving a Load 1 Motivation Thus far, we have learned how to model our essential building block,

More information

Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation

Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation Text sec 1.2 pp. 28-32; sec 3.2 pp. 128-129 Current source Ideal goal Small signal model: Open

More information

MOS Transistor Theory

MOS Transistor Theory MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors

More information

EECS 105: FALL 06 FINAL

EECS 105: FALL 06 FINAL University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 2-3:30 Wednesday December 13, 12:30-3:30pm EECS 105: FALL 06 FINAL NAME Last

More information

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Metal-Oxide-Semiconductor ield Effect Transistor (MOSET) Source Gate Drain p p n- substrate - SUB MOSET is a symmetrical device in the most general case (for example, in an integrating circuit) In a separate

More information

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The in-band Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( In-band implies the

More information

Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models

Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;

More information

Sophomore Physics Laboratory (PH005/105)

Sophomore Physics Laboratory (PH005/105) CALIFORNIA INSTITUTE OF TECHNOLOGY PHYSICS MATHEMATICS AND ASTRONOMY DIVISION Sophomore Physics Laboratory (PH5/15) Analog Electronics Active Filters Copyright c Virgínio de Oliveira Sannibale, 23 (Revision

More information

Homework Assignment 11

Homework Assignment 11 Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuous-time active filters. (3 points) Continuous time filters use resistors

More information

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 4-1 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

Two-Port Networks Admittance Parameters CHAPTER16 THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO:

Two-Port Networks Admittance Parameters CHAPTER16 THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO: CHAPTER16 Two-Port Networks THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO: Calculate the admittance, impedance, hybrid, and transmission parameter for two-port networks. Convert

More information

Lecture 04: Single Transistor Ampliers

Lecture 04: Single Transistor Ampliers Lecture 04: Single Transistor Ampliers Analog IC Design Dr. Ryan Robucci Department of Computer Science and Electrical Engineering, UMBC Spring 2015 Dr. Ryan Robucci Lecture IV 1 / 37 Single-Transistor

More information

D is the voltage difference = (V + - V - ).

D is the voltage difference = (V + - V - ). 1 Operational amplifier is one of the most common electronic building blocks used by engineers. It has two input terminals: V + and V -, and one output terminal Y. It provides a gain A, which is usually

More information

ECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM.

ECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM. ECE137B Final Exam Wednesday 6/8/2016, 7:30-10:30PM. There are7 problems on this exam and you have 3 hours There are pages 1-32 in the exam: please make sure all are there. Do not open this exam until

More information

Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models

Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Lecture 1 MOSFET (III) MOSFET Equivalent Circuit Models Outline Lowfrequency smallsignal equivalent circuit model Highfrequency smallsignal equivalent circuit model Reading Assignment: Howe and Sodini;

More information

E2.2 Analogue Electronics

E2.2 Analogue Electronics E2.2 Analogue Electronics Instructor : Christos Papavassiliou Office, email : EE 915, c.papavas@imperial.ac.uk Lectures : Monday 2pm, room 408 (weeks 2-11) Thursday 3pm, room 509 (weeks 4-11) Problem,

More information

Notes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS

Notes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS Objectives: Introduction Notes for course EE1.1 Circuit Analysis 4-5 Re-examination of 1-port sub-circuits Admittance parameters for -port circuits TOPIC 1 -PORT CIRCUITS Gain and port impedance from -port

More information

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits

More information

Lecture 18. Common Source Stage

Lecture 18. Common Source Stage ecture 8 OUTINE Basic MOSFET amplifier MOSFET biasing MOSFET current sources Common source amplifier eading: Chap. 7. 7.7. EE05 Spring 008 ecture 8, Slide Prof. Wu, UC Berkeley Common Source Stage λ =

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

6.301 Solid-State Circuits Recitation 14: Op-Amps and Assorted Other Topics Prof. Joel L. Dawson

6.301 Solid-State Circuits Recitation 14: Op-Amps and Assorted Other Topics Prof. Joel L. Dawson First, let s take a moment to further explore device matching for current mirrors: I R I 0 Q 1 Q 2 and ask what happens when Q 1 and Q 2 operate at different temperatures. It turns out that grinding through

More information

ESE319 Introduction to Microelectronics. Feedback Basics

ESE319 Introduction to Microelectronics. Feedback Basics Feedback Basics Stability Feedback concept Feedback in emitter follower One-pole feedback and root locus Frequency dependent feedback and root locus Gain and phase margins Conditions for closed loop stability

More information

ECE3050 Assignment 7

ECE3050 Assignment 7 ECE3050 Assignment 7. Sketch and label the Bode magnitude and phase plots for the transfer functions given. Use loglog scales for the magnitude plots and linear-log scales for the phase plots. On the magnitude

More information

IFB270 Advanced Electronic Circuits

IFB270 Advanced Electronic Circuits IFB270 Advanced Electronic Circuits Chapter 0: Ampliier requency response Pro. Manar Mohaisen Department o EEC Engineering Review o the Precedent Lecture Reviewed o the JFET and MOSFET Explained and analyzed

More information

Circuit Topologies & Analysis Techniques in HF ICs

Circuit Topologies & Analysis Techniques in HF ICs Circuit Topologies & Analysis Techniques in HF ICs 1 Outline Analog vs. Microwave Circuit Design Impedance matching Tuned circuit topologies Techniques to maximize bandwidth Challenges in differential

More information

6.301 Solid State Circuits Recitation 7: Emitter Degeneration, and More on Multistage Amps Prof. Joel L. Dawson

6.301 Solid State Circuits Recitation 7: Emitter Degeneration, and More on Multistage Amps Prof. Joel L. Dawson We re going to look at emitter degeneration in detail today. The purpose is in part to review, and in part to help pull together a few of the concepts that we ve dealt with in the class up to this point.

More information

Sample-and-Holds David Johns and Ken Martin University of Toronto

Sample-and-Holds David Johns and Ken Martin University of Toronto Sample-and-Holds David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 18 Sample-and-Hold Circuits Also called track-and-hold circuits Often needed in A/D converters

More information

EE 240B Spring Advanced Analog Integrated Circuits Lecture 2: MOS Transistor Models. Elad Alon Dept. of EECS

EE 240B Spring Advanced Analog Integrated Circuits Lecture 2: MOS Transistor Models. Elad Alon Dept. of EECS EE 240B Spring 2018 Advanced Analog Integrated Circuits Lecture 2: MOS Transistor Models Elad Alon Dept. of EECS Square Law Model? Assumptions made to come up with this model: Charge density determined

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C45 ME C8 Introduction to MEMS Design Fall 007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 5: Output t

More information

6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers

6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers 6.776 High Speed Communication Circuits Lecture 10 Noise Modeling in Amplifiers Michael Perrott Massachusetts Institute of Technology March 8, 2005 Copyright 2005 by Michael H. Perrott Notation for Mean,

More information

Sinusoidal Steady State Analysis (AC Analysis) Part I

Sinusoidal Steady State Analysis (AC Analysis) Part I Sinusoidal Steady State Analysis (AC Analysis) Part I Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/

More information

Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory

Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory Electronic Circuits Prof. Dr. Qiuting Huang 6. Transimpedance Amplifiers, Voltage Regulators, Logarithmic Amplifiers, Anti-Logarithmic Amplifiers Transimpedance Amplifiers Sensing an input current ii in

More information

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS ) ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

Stability and Frequency Compensation

Stability and Frequency Compensation 類比電路設計 (3349) - 2004 Stability and Frequency ompensation hing-yuan Yang National hung-hsing University Department of Electrical Engineering Overview Reading B Razavi hapter 0 Introduction In this lecture,

More information

ECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 =

ECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 = ECE 3050A, Spring 2004 Page Problem (20 points This problem must be attempted) The simplified schematic of a feedback amplifier is shown. Assume that all transistors are matched and g m ma/v and r ds.

More information

(Refer Slide Time: 1:41)

(Refer Slide Time: 1:41) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 13 Module no 01 Midband Analysis of CB and CC Amplifiers We are

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

OPERATIONAL AMPLIFIER APPLICATIONS

OPERATIONAL AMPLIFIER APPLICATIONS OPERATIONAL AMPLIFIER APPLICATIONS 2.1 The Ideal Op Amp (Chapter 2.1) Amplifier Applications 2.2 The Inverting Configuration (Chapter 2.2) 2.3 The Non-inverting Configuration (Chapter 2.3) 2.4 Difference

More information

EE221 Circuits II. Chapter 14 Frequency Response

EE221 Circuits II. Chapter 14 Frequency Response EE22 Circuits II Chapter 4 Frequency Response Frequency Response Chapter 4 4. Introduction 4.2 Transfer Function 4.3 Bode Plots 4.4 Series Resonance 4.5 Parallel Resonance 4.6 Passive Filters 4.7 Active

More information

Frequency Dependent Aspects of Op-amps

Frequency Dependent Aspects of Op-amps Frequency Dependent Aspects of Op-amps Frequency dependent feedback circuits The arguments that lead to expressions describing the circuit gain of inverting and non-inverting amplifier circuits with resistive

More information

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time

More information

EECS240 Spring Today s Lecture. Lecture 2: CMOS Technology and Passive Devices. Lingkai Kong EECS. EE240 CMOS Technology

EECS240 Spring Today s Lecture. Lecture 2: CMOS Technology and Passive Devices. Lingkai Kong EECS. EE240 CMOS Technology EECS240 Spring 2013 Lecture 2: CMOS Technology and Passive Devices Lingkai Kong EECS Today s Lecture EE240 CMOS Technology Passive devices Motivation Resistors Capacitors (Inductors) Next time: MOS transistor

More information

EE221 Circuits II. Chapter 14 Frequency Response

EE221 Circuits II. Chapter 14 Frequency Response EE22 Circuits II Chapter 4 Frequency Response Frequency Response Chapter 4 4. Introduction 4.2 Transfer Function 4.3 Bode Plots 4.4 Series Resonance 4.5 Parallel Resonance 4.6 Passive Filters 4.7 Active

More information

Two-Port Noise Analysis

Two-Port Noise Analysis Berkeley Two-Port Noise Analysis Prof. Ali M. Niknejad U.C. Berkeley Copyright c 2015 by Ali M. Niknejad 1/26 Equivalent Noise Generators v 2 n Noisy Two-Port i 2 n Noiseless Two-Port Any noisy two port

More information

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam

More information