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1 ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions on this page. NO CREDIT WILL BE AWARDED FOR A MULTIPLE CHOICE QUESTION IF THE ANSWER IS NOT CIRCLED ON THIS PAGE. You must turn in the entire exam. Partial credit will only be awarded for the workout problem. Circle the one best answer for each question. Five points per question. Do not open and begin until you are instructed to do so! 1) a b c d e 2) a b c d e 3) a b c d e 4) a b c d e 5) a b c d e 6) a b c d e 7) a b c d e 8) a b c d e 9) a b c d e 10) a b c d e 11) a b c d e 12) a b c d e 13) a b c d e 14) a b c d e 15) a b c d e 16) a b c d e 1

2 SHOW ALL WORK FOR PROBLEM #17 ON THESE TWO SHEETS 17) Use the amplifier circuit shown below for all parts of this problem. The transistor has V BE (on) = 0.6 V, β = 200, and an infinite Early voltage. a) (6 pts) Draw the small-signal equivalent circuit. b) (4 pts) Derive an equation for the input impedance, R is, seen from the current source, i s. 1

3 c) (4 pts) Derive an equation for the output resistance, R o, seen from the load resistor, R L. io d) (6 pts) Derive an equation for the current gain provided by this circuit, A i =. i s 2

4 MULTIPLE CHOICE QUESTIONS 1) In the circuit below, R i =? a) R th b) R th (r + R E ) c) R th [r + (1 + g m R E )] d) R th [r + (1 + g m r )R E ] 2) Given a pnp transistor in a bias-stable circuit for which I CQ = 3.17 ma, β = 111, V A = 177 V, and V th = 27.3 mv, what is the quantity (1+ g m r ) =? a) 113 b) 177 c) 178 d) 112 3

5 3) The transistor in the circuit below has an infinite Early voltage. Which is the correct small-signal model for the circuit? d) Both (a) and (c) are correct 4

6 4) The instantaneous drain current in a MOSFET amplifier is given by i D n ( v V ) 2 = K, where v GS = VGSQ + vgs. GS TN To minimize undesirable harmonics, or nonlinear distortion, what is required? a) v gs << VT v << V b) gs TN c) v << 2( V V ) gs GSQ d) v gs = VGSQ TN 5) A common-drain amplifier has been constructed using an n-channel e-mode MOSFET transistor (k = 1 ma/v 2, V th = 1 V) biased at I D = 1 ma. The output resistance of this circuit is 400 Ω. What is the output resistance of a common-collector amplifier (npn BJT transistor: V BE (on) = 0.7 V, β = 200, V A = 150 V) having the same resistor values and constructed such that I C = 1 ma? a) 8 Ω b) 400 Ω c) 500 Ω d) 13 Ω 5

7 6) In a source-follower amplifier, which of the following can be true? a) R C = 0 b) R D = 0 c) R S = 0 d) All of the above 7) In the circuit below, v gs =? a) v gs = I x R Si b) v gs = I x /g m c) v gs = 0 d) v gs = +I x R Si 6

8 8) The following small-signal circuit represents what type of MOSFET amplifier? a) CC b) CD c) CG d) CS 9) A BJT amplifier is found to have an intrinsic voltage gain, Av i = What type of amplifier is it most likely to be? a) CS b) CE c) CC d) CB 7

9 10) Which amplifier type should be used to achieve a significant gain in power with a minimal change in voltage? a) CB b) CC c) CD d) CE 11) The transistor in the circuit below has k = 1 ma/v 2 and V th = 2 V. Compute the source voltage gain, Av s, in the circuit below: a) 8.00 b) 4.00 c) 2.25 d)

10 12) The circuit below is a amplifier. a) CB b) CS w/source degeneration c) CC w/collector degeneration d) CC 13) Given: R 1 = 20 Ω, R 2 = 70 kω, R 3 = 1 kω, R 4 = 75 kω, R 5 = 5 kω, R 6 = 5 kω. For a particular V +, a collector current of I C = 300 µa and a diffusion resistance of r = 1.3 kω are observed. What is the magnitude of the intrinsic voltage gain, Av i? a) 2.17 b) 2.31 c) 2.50 d)

11 14) What is the minimum value for R X such that the following circuit will be (a) bias stable, and (b) exhibit an input impedance of at least 1.8 kω when β = 50 and V BE (on) = 0.7 V. a) 9.7 kω b) 6.3 kω c) 3.9 kω d) 2.1 kω 10

12 15) Compute R o, the output resistance seen from the load, R L, for the small-signal equivalent circuit below. a) 0 b) R 1 R 2 c) R 1 R 2 + r o d) r o 16) Derive an equation for the magnitude of the source voltage gain, Av s, for the circuit in Problem 15. RL r a) g o m R1 R2 + R L g R r b) ( ) m L o c) g R m L d) g mro 1 RL ro R L 11

13 Data: At 25 C( R. T.) VT = kt / q = V 19 q = C 0 C = K Formulas: e x 2 = 1+ x + x / 2 +L Diodes: I D = I 0 e V D nv T 1 EE-255 Formula Sheet: Exam #3 ( ) V D = V 0 + I D R 0 C j = k = J / K C j 0 nv ( ) N T = V D2 V D1 ln( I D2 /I D1 ) 1 V D V bi r d = dυ D di D Q Rectifiers: V r = V M T p RC = nv T I D + I 0 v D = V D + v d Monolithic Resistors: L R = R S W n-channel MOSFETs: 2 I D = k n 2(V GS V Th )V DS V DS [ ] (ohmic/triode) [ ] 2 (saturation) I D = k n V GS V Th V GS > V Th V DS > V GS V Th p-channel MOSFETs: 2 I D = k p 2(V GS V Th )V DS V DS (NOT cut-off) (saturation) 2 [ ] (ohmic/triode) I D = k p [ 2(V SG + V Th )V SD V SD ] (ohmic/triode) [ ] 2 (saturation) I D = k p [ V SG + V Th ] 2 (saturation) I D = k p V GS V Th V GS < V Th (NOT cut-off) V SG > V Th (NOT cut-off) V DS < V GS V Th (saturation) V SD > V SG + V Th (saturation) Thermal Effects: T dev T amb = θ P D P D = I B V BE + I C V CE P D = I D V DS Bipolar Transistors: V BE V I C = βi B I S e T 1 + V CE (active) β = α 1 α α = β 1 + β V A 12

14 Bipolar Transistor Amplifiers (mid-frequency): CE: A vi = g m ( R C r o R L ) R is = r π ( R 1 R 2 ) R o = R C r o CE with emitter degeneragion: ( ) [( )] R o = R C A vi = β R R C L R r π + ( is = ( R 1 R 2 ) r π + ( β +1)R E 1+ β)r E CB: A vi =+g m ( R C R L ) R is = R E r π β +1 R o = R C ( )( r o R E R L ) ( ) 1+ β CC: A vi = r π + ( 1+ β)r o R E R L [ ] R o = r o R E R is = ( R 1 R 2 ) r π + ( β +1)r o R E R L r π + ( R 1 R 2 ) R S β +1 FET Models: g m = 2 k n I D = 2k n ( V GS V T ) r o = λ I D ( ) 1 FET Amplifiers (mid-frequency): CS: A vi = g m ( R D r o R L ) R is = ( R 1 R 2 ) R o = R D r o CG: A vi =+g m ( R D R L ) R is = R SS 1 g m R o = R D ( ) ( ) CD: A vi = g m R SS R L 1 + g m R SS R L R is = ( R 1 R 2 ) R o = R SS 1 g m 13

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