Chapter 9 Bipolar Junction Transistor


 Loraine Hopkins
 1 years ago
 Views:
Transcription
1 hapter 9 ipolar Junction Transistor hapter 9  JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a threeterminal device, which consists a collector (), an emitter () and a base (). There are two types of JTs: NPN type and PNP type. Fig. 1 shows the symbols of both NPN and PNP types JTs. i i N i i P P N N P i NPN i PNP The terminal currents are illustrated in the above figure. It should be noted that i is always greater than i and i. 1. haracteristics of JT JT is a currentcontrolled device; the values of i and i are determined primarily by i. i = β i, where β is the ratio between the collector and base currents. i = i +i = (1 + β) i. For some cases, β can be written as h F. In practice, β is much greater than 1. So, i i., and are the voltages across collectortoemitter, basetoemitter, and collectortobase, respectively. 1
2 hapter 9  JT ipolar Junction Transistor mitter is heavily doped and collector is relatively lightly doped with the same material. The base is with the smallest size and lightest doped in a JT. 2. Operation of a NPN JT Fig. 1 shows a NPN JT, which is connected to two external dc source and they are and. This circuit configuration is so called common emitter configuration. (1) > (2) is kept y using KL, two equations constant can be obtained I I = + I = + I = 0.7 I Increasing causes decreasing Fig. 1 ommon mitter onfiguration When I increases, I and also increase. So, decreases. onversely, decreasing I causes increasing of. So, if is an ac signal, e.g. sinusoid, will be an inverted sinusoid. Such arrangement is rarely used for actual application. 3. D load line and ollector haracteristic urve D load line a graph that represents all the possible combinations of I and. D load line is constructed from the equation = + I is a fixed value When I = 0, (off)=. When = 0, I (sat)= /. 2
3 hapter 9  JT ipolar Junction Transistor ollector haracteristic urve D load line ollector haracteristic urve illustrates the relationship among I, I and. When I is fixed, a constant amount of I is drawn from the supply source. The characteristic curve shown in the last page illustrates that different values of give different. Fig. 2 ombination of dc load line and collector characteristic curve The graph shown in Fig. 2 is used to determine the operating point (Q point) of a JT. Once is determined, the dc load is kept unchanged. The intersection between the dc load line and the collector characteristic curve is the operating point (Qpoint). That means, when the JT is subject to an input current I, 3
4 hapter 9  JT ipolar Junction Transistor respective and I can be obtained at the collector terminal of JT. With the use of this graph, we can determine the desired operating condition for a JT. In practice, Qpoint is selected at the midpoint of and I. 4. D iasing The ac operation of an amplifier depends on its initial values of I, I, and. The function of dc biasing is to set the initial value of I, I, and. Two dc biasing methods are introduced: base bias and voltage divider bias. Fig. 3(a) and 3(b) show the circuit configurations of base bias and voltage divider bias, respectively. The primary goal of circuit analysis is to determine the Qpoint values of I and for a given I. Fig. 3(a) ase bias Fig. 3(b) oltage divider bias ase bias Fig. 3(a) shows a basebiased JT circuit. After applying KL, two equations can be formulated: = I +, = I + The base current I can be obtained as, I = So, can be obtained as, = I where I I β = β. 4
5 hapter 9  JT ipolar Junction Transistor We can say that the obtained I and equal to I Q and Q. The subscript Q means the Qpoint. Appropriate choosing the value of can adjust the location of Qpoint at the midpoints of and I. Disadvantage: The value of β is temperature dependent. I could be changed under different operating temperature such that the Qpoint could shift along the dc load line. Such problem is called Qpoint shift. When an ac signal is injected to the base terminal, the resultant will be either saturated or cutoff. oltagedivider bias oltagedivider bias circuit is by far the most commonly used. Fig. 3(b) shows the circuit configuration. The analysis procedures are slightly different for different ratios between 2 and. ase 1: β From Fig. 3(b), we can formulate 2 = where is the voltage drop across 2. (1) The voltage of can be found as = = 0.7 (2) Using ohm s law, the emitter current can be obtained as I = (3) As mentioned before, I Q I I, Q can be found as = I ( + ) (4) Q Q It can be shown that the β term is not involved. That means, Qpoint shift is no longer presence. 5
6 hapter 9  JT ipolar Junction Transistor ase 2: β alculate the parallel equivalent resistance from the base of the JT to ground. This resistance is found as eq 2 β = (5) Solve for the base voltage as follows: = 1 eq + eq (6) After solving for, substituting (6) into (2) to continue the sequence of calculations to find the values of I Q and Q. xample 1: onsider the circuit of Fig. 3(a), determine the Qpoint values of I and when = 2kΩ, = 360kΩ, = 8 and β = 100. Solution: I can be found as I = (8 0.7) = 360kΩ = 20.28µ A Next, I is found as I = β I = µA = 2.028mA Finally, is found as = I = 8 (2.028mA)(2kΩ) = 3.94 The dc load line can be obtained as = I + 8 = 2000I + When I = 0, (off) = 8. When = 0, I (sat) = 8/2000 = 4mA. I (sat) = 4mA I I Q = 2.028mA I = 20µA Q = 3.94 (off) = 86
7 hapter 9  JT ipolar Junction Transistor xample 2: onsider the circuit of Fig. 3(b), determine the Qpoint of I Q and Q when 1 = 18kΩ, 2 = 4.7kΩ, = 3kΩ, = 1.1kΩ, = 10, and β = 50. Solution: heck the value 2 and (0.1 β ), So, the base voltage can be found as kΩ = 5.5kΩ > 4.7kΩ = 10 = kΩ + 4.7kΩ 2 is found as I Q is then found as = = = 1.37 I Q = = kΩ = 1.25mA Q = I Q ( + ) = 10 (1.25mA)(4.1kΩ) = 4.87 The dc load line can be obtained as = I ( + ) + 10 = 4100I + When I = 0, (off) = 10. When = 0, I (sat) = 10/4100 = 2.44mA I (sat) =2.44 ma I I Q = 1.25 ma I = 25µA Q = 4.87 (off) = 10 xample 3: onsider the circuit of Fig. 3(b), determine the Qpoint of I Q and Q when 1 = 68kΩ, 2 = 10kΩ, = 6.2kΩ, = 1.1kΩ, = 20, and β =
8 hapter 9  JT ipolar Junction Transistor Solution: heck the value 2 and (0.1 β ), kΩ = 5.5kΩ < So, the equivalent resistance eq can be found as = β = (10kΩ) (55kΩ) = 8.46kΩ eq Then, can be found as 2 2 = eq + eq kΩ = 20 68kΩ kΩ = 2.21 is found as = = = 1.51 I Q is then found as I Q = = kΩ = 1.37mA Q = I Q ( + ) = 20 (1.37mA)(7.3kΩ) = 9.99 The equation of dc load line is When = 0, I (sat) = 2.74mA. When I = 0, (off) = Interfacing = 20 = + I ( I + ) Apart from the application of amplification, JT can be used as a ON/OFF switch. With the aid of dc load line, two phenomena can be observed: (1) If I = 0, I will be zero and will be equaled to. (2) If I is sufficient large, I will reach to its maximum value and will become zero. That means, if a JT is subject to a square pulse train with sufficient large in magnitude, the measurement of will be an inverted square pulse train. 8
Chapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationTransistors. Lesson #9 Chapter 4. BME 372 Electronics I J.Schesser
Transistors Lesson #9 hapter 4 252 JT egions of Operation 7.03 6.03 5.03 4.03 3.03 2.03 1.03 0.00 Saturation Active i amps i =50 ma 40 ma 30 ma 20 ma 10 ma 0 ma 0 1 2 3 4 5 6 7 8 9 10 v volts utoff There
More informationassess the biasing requirements for transistor amplifiers
1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage
More informationEE 330 Lecture 20. Bipolar Device Modeling
330 Lecture 20 ipolar Device Modeling xam 2 Friday March 9 xam 3 Friday April 13 Review from Last Lecture ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationForwardActive Terminal Currents
ForwardActive Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th  e W (why minus sign? is by def.
More informationLecture 18  The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001
6.012  Microelectronic Devices and ircuits  Spring 2001 Lecture 181 Lecture 18  The ipolar Junction Transistor (II) Regimes of Operation April 19, 2001 ontents: 1. Regimes of operation. 2. Largesignal
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationBJT  Mode of Operations
JT  Mode of Operations JTs can be modeled by two backtoback diodes. N+ P N N+ JTs are operated in four modes. HO #6: LN 251  JT M Models Page 1 1) Forward active / normal junction forward biased junction
More informationLecture 18  The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005
6.012  Microelectronic Devices and ircuits  Fall 2005 Lecture 181 Lecture 18  The ipolar Junction Transistor (II) ontents: 1. Regimes of operation. Regimes of Operation November 10, 2005 2. Largesignal
More informationEE 330 Lecture 31. Basic Amplifier Analysis HighGain Amplifiers Current Source Biasing (just introduction)
330 Lecture 31 asic Amplifier Analysis HighGain Amplifiers urrent Source iasing (just introduction) eview from Last Time ommon mitter onfiguration ommon mitter onsider the following application (this
More informationCHAPTER 13. Solutions for Exercises
HPT 3 Solutions for xercises 3. The emitter current is gien by the Shockley equation: i S exp VT For operation with i, we hae exp >> S >>, and we can write VT i S exp VT Soling for, we hae 3.2 i 2 0 26ln
More informationSection 5.4 BJT Circuits at DC
12/3/2004 section 5_4 JT Circuits at DC 1/1 Section 5.4 JT Circuits at DC Reading Assignment: pp. 421436 To analyze a JT circuit, we follow the same boring procedure as always: ASSUME, ENFORCE, ANALYZE
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationS.E. Sem. III [ETRX] Electronic Circuits and Design I
S.E. Sem. [ETRX] Electronic ircuits and Design Time : 3 Hrs.] Prelim Paper Solution [Marks : 80 Q.1(a) What happens when diode is operated at high frequency? [5] Ans.: Diode High Frequency Model : This
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationECE342 Test 2 Solutions, Nov 4, :008:00pm, Closed Book (one page of notes allowed)
ECE342 Test 2 Solutions, Nov 4, 2008 6:008:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationChapter 13 Bipolar Junction Transistors
Chapter 3 ipolar Junction Transistors Goal. ipolar Junction Transistor Operation in amplifier circuits. 2. Loadline Analysis & Nonlinear Distortion. 3. Largesignal equialent circuits to analyze JT circuits.
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models
LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 The D bias point is affected by thermal issue due to the active device parameter variations with temperature I 1 I I 0 I [ma] V R } I 5 } I 4 } I 3 Q 2 } I 2 Q 1 } I
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model commonemitter fixedbias voltagedivider bias emitterbias & emitterfollower commonbase configuration Transistor
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationSmallSignal Midfrequency BJT Amplifiers
SmallSignal Midfrequency JT Amplifiers 6.. INTRODUTION For sufficiently small emittercollector voltage and current excursions about the quiescent point (small signals), the JT is considered linear; it
More informationA.M. WEDNESDAY, 13 May minutes
Candidate Name Centre Number Candidate Number 0 GCSE 293/02 ELECTRONICS MODULE TEST E1 HIGHER TIER AM WEDNESDAY, 13 May 2009 45 minutes For Examiner s use Total Mark ADDITIONAL MATERIALS In addition to
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationBipolar Junction Transistors: Solving EbersMoll Problems
C 305: Fall 016 ipolar Junction Transistors: Solving bersmoll Problems Professor Peter ermel lectrical and Computer ngineering Purdue University, West Lafayette, N USA pbermel@purdue.edu Pierret, Semiconductor
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE:  A circuit that increases the amplitude of given signal is an amplifier  Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationCM600HX12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX12A. IC...600A VCES...600V Single
MHX1A MHX1A I...A S... Single Flatbase Type / Insulated Package / opper (nonplating) base plate RoHS Directive compliant APPLIATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLIN
More informationType Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationChapter 4 FieldEffect Transistors
Chapter 4 FieldEffect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 41 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationChapter 3 Output stages
Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum
More informationType Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationWhereas the diode was a 1junction device, the transistor contains two junctions. This leads to two possibilities:
Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: ntype (favor e), ptype (favor holes) for conduction Whereas the diode was a junction
More informationType Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23
PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration
More informationLecture 27: Introduction to Bipolar Transistors
NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors. technický list DISCRETE SEMICONDUCTORS Apr 15
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 1999 Apr 15 str 1 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching
More informationBipolar Junction Transistors
ipolar Juctio Trasistors ipolar juctio trasistor (JT) was iveted i 948 at ell Telephoe Laboratories Sice 97, the high desity ad low power advatage of the MOS techology steadily eroded the JT s early domiace.
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationActive Circuits: Life gets interesting
Actie Circuits: Life gets interesting Actie cct elements operational amplifiers (OP AMPS) and transistors Deices which can inject power into the cct External power supply normally comes from connection
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationThey keep the voltage the same and use this circuit to measure the current. Variable resistor. Reading on ammeter in amps
1 Ksenia and Eva investigate five different variable resistors. They set each variable resistor to the maximum resistance. They keep the voltage the same and use this circuit to measure the current. A
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An ntype sample of silicon has a uniform density N D = 10 16 atoms cm 3 of arsenic, and a ptype silicon sample has N A = 10 15 atoms cm 3 of boron. For each
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture4 Biasing
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationEE 330 Lecture 30. Basic amplifier architectures
33 Lecture 3 asic aplifier architectures asic plifier Structures MOS and ipolar Transistors oth have 3 priary terinals MOS transistor has a fourth terinal that is generally considered a parasitic D terinal
More informationECE305: Spring 2018 Final Exam Review
C305: Spring 2018 Final xam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapters 10 and 11 (pp. 371385, 389403) Professor Peter Bermel lectrical and Computer ngineering Purdue University,
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationEE 330 Lecture 31. Basic amplifier architectures. Common Emitter/Source Common Collector/Drain Common Base/Gate
33 Lecture 3 asic aplifier architectures oon itter/source oon ollector/drain oon ase/gate eview fro arlier Lecture Twoport representation of aplifiers plifiers can be odeled as a twoport y 2 2 y y 22
More informationCM600HG130H HIGH POWER SWITCHING USE 3rdVersion HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
M6HG1H rdersion M6HG1H I...6 A S... 6 High Insulated Type 1element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V Odm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V Odm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V Odm is the differential output offset
More informationInstitute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:0011:00 P2
Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:0011:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationW  DIA. (4 TYP.) AE AG AH AJ R
M6HA2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 9257272 www.pwrx.com Single IGBT ASeries Module 6 Amperes/12 Volts H G F D K J W  DIA. ( TYP.) AF A AG Y X Y Z G AA K B A
More informationType Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23
PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)
More informationType Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationB C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )
Designed Specifically for High Frequency Electronic Ballasts up to 5 W h FE 6 to at = V, = A Low Power Losses (Onstate and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible
More informationEE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:308pm in Sibley Auditorium Covering everything
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationDETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 156971 (72) 9257272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
More informationAs light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR
LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both
More informationType Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
More informationSMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U
PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package
More information1.7 DeltaStar Transformation
S Electronic ircuits D ircuits 8.7 DeltaStar Transformation Fig..(a) shows three resistors R, R and R connected in a closed delta to three terminals, and, their numerical subscripts,, and, being opposite
More informationSwitching Regulators MC33063A SOP
MC0A Features Operation from.0 to 0 Input Low Standby Current Current Limiting Output oltage Adjustable Frequency Operation to 00 khz Pb Free Packages are Available Output Current to. A SOP 0. 0.00.0.0
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationOperational Amplifier (OpAmp) Operational Amplifiers. OPAmp: Components. Internal Design of LM741
(OpAmp) s Prof. Dr. M. Zahurul Haq zahurul@me.buet.ac.bd http://teacher.buet.ac.bd/zahurul/ Department of Mechanical Engineering Bangladesh University of Engineering & Technology ME 475: Mechatronics
More informationCharacteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
More information