EE105 - Fall 2006 Microelectronic Devices and Circuits

Size: px
Start display at page:

Download "EE105 - Fall 2006 Microelectronic Devices and Circuits"

Transcription

1 EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything up to, but NOT INCLUDING multi-stage amplifiers Review session Tonight 6-7:30pm in 003 Leconte. No lab this week. Homework 9 due on We by 5pm. Solutions will be posted by 6pm. Pick up graded homeworks in 253 Cory (up to and including homework 7) 2 1

2 3 4 2

3 5 6 3

4 7 8 4

5 9 10 5

6 Bipolar Junction Transistors (BJT) Reading: Ideal BJT Structure I C + I E Collector (N) Base (P) Emitter (N) + I B V BE + V CE I E Emitter (P) Base (N) Collector (P) I B V EB + V EC I C NPN or PNP sandwich (Two back-to-back diodes) How does current flow? Base is very thin. A good BJT satisfies the following I C >> I I B C I E I C I e S qv BE kt 12 6

7 Actual BJT Cross Section Vertical npn sandwich (pnp is usually a lateral structure) n+ buried layout is a low resistance contact to collector Base width determined by vertical distance between emitter diffusion and base diffusion 13 BJT Layout Emitter area most important layout parameter 14 7

8 BJT Schematic Symbol I C = β I B + I B V BE I + V CE C I E I e S qv BE kt V B V C V E Collector current is linearly controlled by base current Collector current is an exponential function of the baseemitter voltage 15 Operations Modes 16 8

9 BJT Collector Characteristic Ground emitter Fix V CE Drive base with fixed current I B Measure the collector current 17 Forward Active Operation Carrier Concentration Depletion Regions E B C n b (0) p c0 p e0 n b0 0 W x W B 18 9

10 Current Components E B C I E 1 I C 2 3 x I B electrons holes 19 Reverse Active Carrier Concentration E B C n b (W) p e0 n b (0) n b0 0 W p c0 x W B 20 10

11 Saturation Mode Carrier Concentration n b (0) E B C Q A n b (W) p e0 QS n b0 0 W p c0 x W B 21 Cutoff Carrier Concentration E B C p e0 nb (0) n b0 n b (W) 0 W p c0 x W B 22 11

12 Collector Characteristics (I B ) Saturation Region (Low Output Resistance) Breakdown Reverse Active (Bad Transistor) Linear Increase Forward Active Region (Very High Output Resistance) 23 Base-Emitter Voltage Control Saturation Region (Low Output Resistance) ~0.3V Breakdown Reverse Active (Bad Transistor) Exponential Increase Forward Active Region (High Output Resistance) 24 12

13 V CB V BE + Transistor Action + > 0 > 0 Collector (n) Base (p) Emitter (n+) e recombination e h h h Base-emitter junction is forward biased and collector-base junction is reverse biased Electrons emitted into base much more than holes since the doping of emitter is much higher Magic: Most electrons cross the base junction and are swept into collector Why? Base width much smaller than diffusion length. Base-collector junction pulls electrons into collector 25 Forward Active Operation Carrier Concentration Depletion Regions E B C n b (0) p c0 p e0 n b0 0 W x W B 26 13

14 27 Diffusion Currents Minority carriers in base form a uniform diffusion current. Since emitter doping is higher, this current swamps out the current portion due to the minority carriers injected from base 28 14

15 BJT Currents Collector current is nearly identical to the (magnitude) of the emitter current define KCL: DC Current Gain: I = α I C F E IE = IC + IB I = α I = α ( I + I ) C F E F B C α =.999 F F I = α I = β I 1 α C B F B F β F α F.999 = = = α.001 F 29 Origin of α F Base-emitter junction: some reverse injection of holes into the emitter base current isn t zero E B C Some electrons lost due to recombination Typical: α.99 βf 100 F 30 15

16 Current Components E B C I E 1 I C 2 3 x I B electrons holes 31 Collector Current Diffusion of electrons across base results in dn diff p qdnn pb0 Jn = qdn = e dx WB qv BE kt I S qdnnpb0 AE = WB I C = I e S qv BE kt 32 16

17 Base Current Diffusion of holes across emitter results in qv BE diff dp qd ne ppne0 kt Jp = qdp = e 1 dx WE I B qv qd BE ppne0 AE kt = e 1 WE 33 Current Gain β F qdnn pboae I W C B D n n pb0 W E = = = I qd B ppneoae D p pne0 WB WE Minimize base width 2 ni n N N = = p N pb0 A, B D, E 2 ne0 ni NA, B DE, Maximize doping in emitter 34 17

18 Ebers-Moll Equations Derivation: Write emitter and collector currents in terms of internal currents at two junctions VBE / Vth / ( 1 VBC Vth ) α ( 1 ) I = I e + I e E ES R CS VBE / Vth / ( 1 VBC Vth ) ( 1 ) I = α I e I e C F ES CS α I = α I F ES R CS 35 Ebers-Moll Equivalent Circuit Building blocks: diodes and I-controlled I sources 36 18

19 Forward Active Region B-C junction is not forward-biased I R is very small Typical Values: V BE = V CE > Simplified Ebers-Moll Forward-Active Case: V = 0.7 IC = βf IB BE B I B Saturation: both diodes are forward-biases batteries I C C E V BE = B 0.7 I B I C C V CE = E

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I V characteristics in forward active regime Reading Assignment:

More information

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 17-1 Lecture 17 - The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

Digital Integrated CircuitDesign

Digital Integrated CircuitDesign Digital Integrated CircuitDesign Lecture 5a Bipolar Transistor Dep. Region Neutral Base n(0) b B C n b0 P C0 P e0 P C xn 0 xp 0 x n(w) b W B Adib Abrishamifar EE Department IUST Contents Bipolar Transistor

More information

Recitation 17: BJT-Basic Operation in FAR

Recitation 17: BJT-Basic Operation in FAR Recitation 17: BJT-Basic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two p-n junctions back to back, you can have pnp or npn. In analogy to MOSFET small current

More information

Bipolar junction transistor operation and modeling

Bipolar junction transistor operation and modeling 6.01 - Electronic Devices and Circuits Lecture 8 - Bipolar Junction Transistor Basics - Outline Announcements Handout - Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam - Oct. 8, 7:30-9:30

More information

ECE-305: Spring 2018 Final Exam Review

ECE-305: Spring 2018 Final Exam Review C-305: Spring 2018 Final xam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapters 10 and 11 (pp. 371-385, 389-403) Professor Peter Bermel lectrical and Computer ngineering Purdue University,

More information

Forward-Active Terminal Currents

Forward-Active Terminal Currents Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.

More information

Device Physics: The Bipolar Transistor

Device Physics: The Bipolar Transistor Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches

More information

Lecture 27: Introduction to Bipolar Transistors

Lecture 27: Introduction to Bipolar Transistors NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor

More information

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict

More information

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.) 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)

More information

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2 Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:00-11:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,

More information

13. Bipolar transistors

13. Bipolar transistors Technische Universität Graz Institute of Solid State Physics 13. Bipolar transistors Jan. 16, 2019 Technische Universität Graz Institute of Solid State Physics bipolar transistors npn transistor collector

More information

Lecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline

Lecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline Lecture 17 The Bipolar Junction Transistor (II) Regimes of Operation Outline Regimes of operation Large-signal equivalent circuit model Output characteristics Reading Assignment: Howe and Sodini; Chapter

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor

More information

Memories Bipolar Transistors

Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four

More information

CLASS 3&4. BJT currents, parameters and circuit configurations

CLASS 3&4. BJT currents, parameters and circuit configurations CLASS 3&4 BJT currents, parameters and circuit configurations I E =I Ep +I En I C =I Cp +I Cn I B =I BB +I En -I Cn I BB =I Ep -I Cp I E = I B + I C I En = current produced by the electrons injected from

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

Charge-Storage Elements: Base-Charging Capacitance C b

Charge-Storage Elements: Base-Charging Capacitance C b Charge-Storage Elements: Base-Charging Capacitance C b * Minority electrons are stored in the base -- this charge q NB is a function of the base-emitter voltage * base is still neutral... majority carriers

More information

Lecture 0. EE206 Electronics I

Lecture 0. EE206 Electronics I Lecture 0 Course Overview EE206 Electronics I Course description: Theory, characteristics and operation of diodes, bipolar junction transistors and MOSFET transistors. When: Tue Thu 10:30-12:20 (Lectures)

More information

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017 NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

12. Memories / Bipolar transistors

12. Memories / Bipolar transistors Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Bipolar Junction Transistors: Solving Ebers-Moll Problems

Bipolar Junction Transistors: Solving Ebers-Moll Problems C 305: Fall 016 ipolar Junction Transistors: Solving bers-moll Problems Professor Peter ermel lectrical and Computer ngineering Purdue University, West Lafayette, N USA pbermel@purdue.edu Pierret, Semiconductor

More information

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics

More information

ELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling

ELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling ELEC 3908, Physical Electronics, Lecture 19 BJT Base Resistance and Small Signal Modelling Lecture Outline Lecture 17 derived static (dc) injection model to predict dc currents from terminal voltages This

More information

Microelectronic Devices and Circuits Lecture 13 - Linear Equivalent Circuits - Outline Announcements Exam Two -

Microelectronic Devices and Circuits Lecture 13 - Linear Equivalent Circuits - Outline Announcements Exam Two - 6.012 Microelectronic Devices and Circuits Lecture 13 Linear Equivalent Circuits Outline Announcements Exam Two Coming next week, Nov. 5, 7:309:30 p.m. Review Subthreshold operation of MOSFETs Review Large

More information

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005 6.012 - Microelectronic Devices and ircuits - Fall 2005 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) ontents: 1. Regimes of operation. Regimes of Operation November 10, 2005 2. Large-signal

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

ESE319 Introduction to Microelectronics. BJT Biasing Cont. BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple

More information

Junction Bipolar Transistor. Characteristics Models Datasheet

Junction Bipolar Transistor. Characteristics Models Datasheet Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically

More information

Bipolar Transistor WS 2011

Bipolar Transistor WS 2011 Institut für Integrierte Systeme Integrated Systems Laboratory Bipolar Transistor WS 2011 1 Introduction In this exercise we want to simulate the IV characteristics of a bipolar transistor and draw the

More information

01 01 Intro to Course

01 01 Intro to Course ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan 01 01 Intro to Course Physical structures of crystal systems that are important for devices W 12 02 01 How to quantify physical structures of

More information

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:

More information

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001 6.012 - Microelectronic Devices and ircuits - Spring 2001 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) Regimes of Operation April 19, 2001 ontents: 1. Regimes of operation. 2. Large-signal

More information

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6 R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence

More information

EE 330 Lecture 20. Bipolar Device Modeling

EE 330 Lecture 20. Bipolar Device Modeling 330 Lecture 20 ipolar Device Modeling xam 2 Friday March 9 xam 3 Friday April 13 Review from Last Lecture ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not

More information

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications

More information

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1 Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Lecture Notes for ECE 215: Digital Integrated Circuits

Lecture Notes for ECE 215: Digital Integrated Circuits Lecture Notes for ECE 215: Digital Integrated Circuits J. E. Ayers Electrical and Computer Engineering Department University of Connecticut 2002 All rights reserved University of Connecticut 1 Introduction

More information

(e V BC/V T. α F I SE = α R I SC = I S (3)

(e V BC/V T. α F I SE = α R I SC = I S (3) Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities:

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities: Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: n-type (favor e-), p-type (favor holes) for conduction Whereas the diode was a -junction

More information

Lecture 16 The pn Junction Diode (III)

Lecture 16 The pn Junction Diode (III) Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

BJT - Mode of Operations

BJT - Mode of Operations JT - Mode of Operations JTs can be modeled by two back-to-back diodes. N+ P N- N+ JTs are operated in four modes. HO #6: LN 251 - JT M Models Page 1 1) Forward active / normal junction forward biased junction

More information

Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects

Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects 6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.

More information

Modeling and Analysis of Full-Chip Parasitic Substrate Currents

Modeling and Analysis of Full-Chip Parasitic Substrate Currents Modeling and Analysis of Full-Chip Parasitic Substrate Currents R. Gillon, W. Schoenmaker September 11, 2017 Rev. 2.0 1 Outline Objectives Challenges SPX solver Solutions l Compact Modeling (ONSEMI) l

More information

ECE-305: Spring 2018 Exam 2 Review

ECE-305: Spring 2018 Exam 2 Review ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,

More information

Devices. chapter Introduction. 1.2 Silicon Conductivity

Devices. chapter Introduction. 1.2 Silicon Conductivity chapter 1 Devices 1.1 Introduction The properties and performance of analog bicmos integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits. Some Administrative Issues

EE105 - Fall 2006 Microelectronic Devices and Circuits. Some Administrative Issues EE105 - Fall 006 Microelectronic evices and Circuits Prof. Jan M. Rabaey (jan@eecs Lecture 8: MOS Small Signal Model Some Administrative Issues REIEW Session Next Week Tu Sept 6 6:00-7:30pm; 060 alley

More information

EE5311- Digital IC Design

EE5311- Digital IC Design EE5311- Digital IC Design Module 1 - The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007

More information

SOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13)

SOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13) ECE- 66 SOLUTIOS: ECE 66 Homework Week 1 Mark Lundstrom (Revised 3/9/13) 1) In a forward- biased P junction under low- injection conditions, the QFL s are aroximately flat from the majority carrier region

More information

Fundamentals of Semiconductor Physics

Fundamentals of Semiconductor Physics Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

More information

Student Number: CARLETON UNIVERSITY SELECTED FINAL EXAMINATION QUESTIONS

Student Number: CARLETON UNIVERSITY SELECTED FINAL EXAMINATION QUESTIONS Name: CARLETON UNIVERSITY SELECTE FINAL EXAMINATION QUESTIONS URATION: 6 HOURS epartment Name & Course Number: ELEC 3908 Course Instructors: S. P. McGarry Authorized Memoranda: Non-programmable calculators

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Lecture 15 The pn Junction Diode (II)

Lecture 15 The pn Junction Diode (II) Lecture 15 The pn Junction Diode (II I-V characteristics Forward Bias Reverse Bias Outline Reading Assignment: Howe and Sodini; Chapter 6, Sections 6.4-6.5 6.012 Spring 2007 Lecture 15 1 1. I-V Characteristics

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

EE 3329 Electronic Devices Syllabus ( Extended Play )

EE 3329 Electronic Devices Syllabus ( Extended Play ) EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction p-type semiconductor in

More information

Semiconductor Device Physics

Semiconductor Device Physics 1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

More information

Lecture 38 - Bipolar Junction Transistor (cont.) May 9, 2007

Lecture 38 - Bipolar Junction Transistor (cont.) May 9, 2007 6.72J/3.43J - Integrated Microelectronic Devices - Spring 27 Lecture 38-1 Lecture 38 - Bipolar Junction Transistor (cont.) May 9, 27 Contents: 1. Non-ideal effects in BJT in FAR Reading material: del Alamo,

More information

Chapter 3 Output stages

Chapter 3 Output stages Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

About Modeling the Reverse Early Effect in HICUM Level 0

About Modeling the Reverse Early Effect in HICUM Level 0 About Modeling the Reverse Early Effect in HICUM Level 0 6 th European HICUM Workshop, June 12-13, 2006, Heilbronn Didier CELI, STMicroelectronics 1/21 D. Céli Purpose According to the bipolar models,

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)

Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical

More information

Lecture 29: BJT Design (II)

Lecture 29: BJT Design (II) NCN www.nanohub.org C606: Solid State Devices Lecture 9: JT Design () Muhammad Ashraful Alam alam@purdue.edu Alam C 606 S09 1 Outline 1) Problems of classical transistor ) Poly Si emitter 3) Short base

More information

ELECTRONICS IA 2017 SCHEME

ELECTRONICS IA 2017 SCHEME ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8

More information

DC and AC modeling of minority carriers currents in ICs substrate

DC and AC modeling of minority carriers currents in ICs substrate DC and AC modeling of minority carriers currents in ICs substrate Camillo Stefanucci, Pietro Buccella, Maher Kayal and Jean-Michel Sallese Swiss Federal Institute of Technology Lausanne, Switzerland MOS-AK

More information

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on Feb. 15, 2018 by 7:00 PM

Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on Feb. 15, 2018 by 7:00 PM Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 018 Homework 3 Due on Feb. 15, 018 by 7:00 PM Suggested Readings: a) Lecture notes Important Note:

More information

3 Minority carrier profiles (the hyperbolic functions) Consider a

3 Minority carrier profiles (the hyperbolic functions) Consider a Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.

More information

PN Junctions. Lecture 7

PN Junctions. Lecture 7 Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R

More information

Electronic Devices and Circuits Lecture 14 - Linear Equivalent Circuits - Outline Announcements

Electronic Devices and Circuits Lecture 14 - Linear Equivalent Circuits - Outline Announcements 6.012 Electronic Devices and Circuits Lecture 14 Linear Equivalent Circuits Outline Announcements Handout Lecture Outline and Summary Review Adding refinements to large signal models Charge stores: depletion

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

Switching circuits: basics and switching speed

Switching circuits: basics and switching speed ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V

More information

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of

More information