Chapter 3 Output stages
|
|
- Dorothy Scott
- 5 years ago
- Views:
Transcription
1 Chapter 3 utput stages
2 3.. Goals and properties
3 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum output excursion small distortions Class A: - very small distortions - poor efficacy Class B: - important distortions - good efficacy Class AB: - small distortions - good efficacy
4 3.. Class A output stage, common collector configuration
5 3.. Class A output stage, common collector configuration Q v i c3 Q Q 3 i o l v v C 3 0; i ; BE 3 0 CE 3 Transfer characteristic v f ( ) v v + v BE 3 c3 BE3 th i ln i + c3 S v l v v v + th th ln ln v With <<, th ln BE 3 l, the expression of the transfer characteristic S becomes, in consequence, v v + v, so linear. - v o n repose: BE3 S + v S l
6 v - Cesat3 slope BE3 v l small (Q 3 blocked) - l l large (Q saturated) - ( - Cesat ) i C 3 i + C 3 + v l v l CE 3 i 0 v + C 3 CE 3 l
7 The maximum positive value of the output voltage is: M CEsat 3 The maximum negative output voltage depends on the value of l : for large l large, the negative limit of the output voltage is limited by the saturation of Q M CEsat M < for l small, the negative limit of the output voltage is limited by the blocking of Q M l < CEsat M t is possible to obtain in the same time maximum values of tension and current, so a maximum output power for an optimal value of the load resistance:
8 Fundamental energetical relations Noting: K where K is the utilization factor of the power supply, 0 K <. So: K K l l The power dissipated on Q 3 is: p D3 v p CE 3 D3 i C 3 sinωt + sinωt ( K sin ωt)( + K sinωt) ( ) K K pd3 K sin ωt + cos ωt So, the average power is: P D3 π π 0 p D3 dωt K
9 v t - i c, i c, i c3 i c i c i c3 l K v CE3, v CE t v CE v CE3 t p D3 p D t t
10 The power dissipated on Q is: p D i C v CE So, the average power is:: + π PD pddωt π The consumed power could be written: p A i C π i C sin ωt + P A p d t 0 A ω π The average output power is: π π ( K sinωt) ( + K sinωt) P p dωt ( K sinωt)( K sinωt) dωt π π 0 so, a maximum value of 5%. η A 0 P P A 5% K K
11 (P A, P, P D3, P D )/P A P A 0,5 0,5 P D P P D3 K / P P + D D3 P P P + P + P A D D3 P D
12 3.3. Class B elementary output amplifier stage
13 3.3. Class B elementary output amplifier stage ` v o Q B B B B C S Q S C B B B B Q - Cesat slope v i C i C i o Q v Q l v o slope - BEon BEon - Dead zone - ( -/ Cesat /) n repose: v 0; i 0; ic ic ; vbe + veb 0 f: Q Q; S S S th ln ic ic S 0
14 ` v o v o v t v t Transfer characteristic
15 v t - i c t i c v o l (i c -i c ) t t - p D i c v CE t
16 Disadvantages of a push-pull class B output stage - dead zone (distortions) - requires PNP transistors (non-performant) Solutions: - evolution to class AB - solution full NPN Fundamental energetical relations Noting: K where K is the utilization factor of the supply voltage, 0 K <. The average output power P is : π π ( K ) sinωt K 0 l K P p 0 dωt sinωt dωt π π Noting with P A the total delivered power (for both supply sources): P A l
17 Where the continuous component is: So:: π π 0 C sinωtdωt π C π l K π PA K πl The average dissipated power P D for a pair of transistors in class B is: 4K PD PA P K l π The previous expression represents a parabola in K, so the maximum could be obtained by making the derivate equal with zero: 4 K 0 K π π For this value of K it will be obtained the maximum average dissipated power (for both transistors): P DM π l π 4 l π 4 P M l P M l
18 n the following graphics it will be represented the normalized powers as function of K. P P A AM K; P P AM πk 4 ; P P D AM Kπ K 4 (P A, P, P D )/P AM π/4 P A P /π -π/4 P D K / /π The efficacy depends on the amplitude of the output power: P π η K PA 4 ts maximum is obtained for K and it is π/4 (78.5%).
19 3.4. The nonlinearity reduction for a class B output stage due to the negative reaction
20 3.4. The nonlinearity reduction for a class B output stage due to the negative reaction v 5 pente 5-0,6 v S f 0kΩ pente 0, v r.5kω v S a 0 5 v 5 pente 5-6µ v S µ pente
21 3.5. Class AB output stage
22 3.5. Class AB output stage Q Q v i C i C Q Q l v o - n order to obtain a good linearity of the global transfer characteristic, it is necessary to: - have a good matching between the transistors from the circuit - proper choose of biasing voltage in repose - choose a pre-biasing of the output stage in order to avoid the thermal embalmment
23 Circuit for avoiding the thermal embalmment () The biasing voltage of the output stage must be a temperature-dependent voltage (for example, the base-emitter voltage) v - Cesat Q - th ln( Q / S ) v v Q l v o - The diode-connected transistors must be at the same temperature with the final transistors. n repose : v 0 QC QC Q Q BE + EB D th ln th Q S ln S SD Q - ( - Cesat ) S SD S
24 Circuit for avoiding the thermal embalmment () ` Q Q 3 Q l v o th ln v + v BE EB v vbe 3 v CE 3 + Q S + ln Q S CE 3 ( ) + th ln S 3 - Q S S S 3 +
25 Circuit for avoiding the thermal embalmment (3) Q Q 3 v Q Q v Q 4 Q - / BE / + BE BE 3 + / BE4 / Q th ln th ln S S Q
26 Circuit for avoiding the thermal embalmment (4) C Q 5 Q 3 BE th ln + C S BE + th BE 3 ln C S + EB4 th ln C 3 S 3 + th ln C 4 S4 v Q Q L C 3 C 4 C S 3 S S4 S Q 4 Q 6 v i - + max max + EC5sat EC6 sat BE 3 BE4
27 Circuit with overload protection () C Q 5 Q 3 Q Q 7 v + max BE7 Q L Q 4 v i Q 6 -
28 Circuit with overload protection () C Q 5 Q Q Q 3 Q 7 v EB8 max L + max BE7 Q 8 Q 4 v i Q 6 -
ESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation - VTC Class AB amplifier biasing Widlar current source Multisim Simulation - Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59
Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: E-mail: info@madeeasy.in Ph: 0-4546 CLASS TEST 08-9 ELECTCAL ENGNEENG Subject
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp
ECE 34: Design Issues for oltage Follower as Output Stage S&S Chapter 14, pp. 131133 Introduction The voltage follower provides a good buffer between a differential amplifier and a load in two ways: 1.
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationUniversity of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS
University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits Final Exam 10Dec08 SOLUTIONS This exam is a closed book exam. Students are allowed to use a
More informationID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset
More informationV = = A = ln V
Chapter Problem Solutions. a. b. c. γ + γ + BE + C + + γ + ( γ ( γ C γ + BE + BE γ BE and C γ ( γ + or C BE + C ma.5 kω.7 ( ma + 4. kω.5 kω C. (a ln C BE T S (i μ 6 A,.6 ln.588 μa C BE 4 (ii μ 6 A,.6 ln.5987
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationInput Stage. V IC(max) V BE1. V CE 5(sat ) V IC(min) = V CC +V BE 3 = V EE. + V CE1(sat )
BJT OPAMPs Input Stage The input stage is similar to MOS design. Take a pnp input stage (Q1- Q2) with npn current mirror load (Q3- Q4) and a pnp tail current source (Q5). Then, V IC(max) = V CC V BE1 V
More informationECE 145A/218A Power Amplifier Design Lectures. Power Amplifier Design 1
Power Amplifiers; Part 1 Class A Device Limitations Large signal output match Define efficiency, power-added efficiency Class A operating conditions Thermal resistance We have studied the design of small-signal
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationEE105 - Fall 2006 Microelectronic Devices and Circuits
EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIB-R T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIB-R T7 Session 08-9 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More information7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING
à 7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Figure. AC coupled common emitter amplifier circuit ü The DC Load Line V CC = I CQ + V CEQ + R E I EQ I EQ = I CQ + I BQ I
More informationCHAPTER 13. Solutions for Exercises
HPT 3 Solutions for xercises 3. The emitter current is gien by the Shockley equation: i S exp VT For operation with i, we hae exp >> S >>, and we can write VT i S exp VT Soling for, we hae 3.2 i 2 0 26ln
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationChapter 2 - DC Biasing - BJTs
Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationECEE 352 Analog Electronics. DC Power Supply Winter 2016
ECEE 352 Analog Electronics DC Power Supply Winter 2016 This Document Produced By: Leo Filippini lf458@drexel.edu Instructor: Prof. Basavaiah basu@coe.drexel.edu TA: Zhihuan Wang zw78@drexel.edu The goal
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationLecture 23: NorCal 40A Power Amplifier. Thermal Modeling.
Whites, EE 322 Lecture 23 Page 1 of 13 Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Recall from the last lecture that the NorCal 40A uses a Class C power amplifier. From Fig. 10.3(b) the collector
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationabsolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)
More informationSmall Signal Model. S. Sivasubramani EE101- Small Signal - Diode
Small Signal Model i v Small Signal Model i I D i d i D v d v D v V D Small Signal Model -Mathematical Analysis V D - DC value v d - ac signal v D - Total signal (DC ac signal) Diode current and voltage
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationChapter 2. - DC Biasing - BJTs
Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationForward-Active Terminal Currents
Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.
More informationassess the biasing requirements for transistor amplifiers
1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationChapter 13 Bipolar Junction Transistors
Chapter 3 ipolar Junction Transistors Goal. ipolar Junction Transistor Operation in amplifier circuits. 2. Load-line Analysis & Nonlinear Distortion. 3. Large-signal equialent circuits to analyze JT circuits.
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationType Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor
More informationSPICE SIMULATIONS OF CURRENT SOURCES BIASING OF LOW VOLTAGE
SPICE SIMULATIONS OF CURRENT SOURCES BIASING OF LOW VOLTAGE MONICA-ANCA CHITA, MIHAI IONESCU Key words: Bias circuits, Current mirrors, Current sources biasing of low voltage, SPICE simulations. In this
More informationMicroelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises
Page Microelectronic Circuit esign Fourth Edition - Part I Solutions to Exercises CHAPTER V LSB 5.V 0 bits 5.V 04bits 5.00 mv V 5.V MSB.560V 000000 9 + 8 + 4 + 0 785 0 V O 785 5.00mV or ) 5.V 3.95 V V
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationECE 205: Intro Elec & Electr Circuits
ECE 205: Intro Elec & Electr Circuits Final Exam Study Guide Version 1.00 Created by Charles Feng http://www.fenguin.net ECE 205: Intro Elec & Electr Circuits Final Exam Study Guide 1 Contents 1 Introductory
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationLecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)
More informationC1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2
NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()
More informationCHAPTER 7 - CD COMPANION
Chapter 7 - CD companion 1 CHAPTER 7 - CD COMPANION CD-7.2 Biasing of Single-Stage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and field-effect
More informationPb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
More informationBCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)
More informationECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution
ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationMICROELECTRONIC CIRCUIT DESIGN Second Edition
MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113
More informationT C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationSilicon Diffused Darlington Power Transistor
GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE
More informationDETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
More informationBCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationPNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357
DEVICES PNP SILICON SITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE
More informationLecture 3: Three-phase power circuits
1/24/28 Lecture : Three-phase power circuits 1 nstructor: Dr. Gleb. Tcheslavski Contact: gleb@ee.lamar.edu Office Hours: TBD; Room 2 Class web site: MyLamar ntroduction 2 Almost all electric power generation
More informationCHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS
CHAPTER 4 SIGNA GENERATORS AND WAEFORM SHAPING CIRCUITS Chapter Outline 4. Basic Principles of Sinusoidal Oscillators 4. Op Amp RC Oscillators 4.3 C and Crystal Oscillators 4.4 Bistable Multivibrators
More informationOptocoupler with Transistor Output
Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
More informationElectronics II. Midterm II
The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)
More informationCharacteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3
ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o
More informationMultichannel Optocoupler with Phototransistor Output
CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More information