Lecture 27: Introduction to Bipolar Transistors
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1 NCN ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam Alam ECE 606 S09 1
2 ackground E C E C ase! Point contact Germanium transistor (your HW problem!) Ralph ray from Purdue missed the invention of transistors. Transistor research was also in advanced stages in Europe (radar). 2
3 Shockley s ipolar Transistors Double n+ p base n collector Diffused JT n+ n+ p n emitter base collector n+ Alam ECE 606 S09
4 Modern ipolar Junction Transistors (JTs) P ase Emitter N+ N N SiGe intrinsic base Collector P+ N+ Dielectric trench Transistor speed increases as the electron's travel distance is reduced SiGe Layer Alam ECE 606 S09 4
5 Symbols and Convention E Symbols N + P Poly emitter Low doped base NPN Collector PNP Collector N C Collector doping optimization ase Emitter ase Emitter I C +I +I E =0 V E +V C +V CE =0 Alam ECE 606 S09 5
6 Outline 1) Equilibrium and forward band diagram 2) Currents in bipolar junction transistors 3) Eber s Mollmodel 4) Conclusions Alam ECE 606 S09 6
7 Topic Map Diode Equilibrium DC Small Large Circuits signal Signal Schottky JT/HT MOS Alam ECE 606 S09 7
8 and Diagram at Equilibrium ( + ) D A D = q p n+ N N n t 1 = J r + g q N N N Equilibrium J = qn μ E+ qd n DC dn/dt=0 N N N p 1 = J r + g tt q J P P P = qpμ E qd p P P P Small signal dn/dt ~ jωtn Transient Charge control model Alam ECE 606 S09 8
9 and Diagram at Equilibrium Emitter ase Collector Vacuum level χ E 1 χ 3 C E F χ 2 E V Alam ECE 606 S09 9
10 Electrostatics in Equilibrium x pe, = 2k s ε 0 N E ( + ) q N N N E V bi x p, C = 2k s ε 0 N C ( + ) q N N N C V bi x ne, = 2k s ε 0 N ( ) q N N + N E E V bi x nc, = 2k sε 0 N ( + ) q N N N C C V bi Emitter ase Collector Alam ECE 606 S09 10
11 Outline 1) Equilibrium and forward band diagram 2) Currents in bipolar junction transistors 3) Eber s Moll model 4) Conclusions Alam ECE 606 S09 11
12 Topic Map Diode Equilibrium DC Small Large Circuits signal Signal Schottky JT/HT MOS Alam ECE 606 S09 12
13 and Diagram with ias ( + ) D A D = q p n+ N N n t 1 = J r + g q N N N Non equilibrium J = qn μ E+ qd n DC dn/dt=0 N N N p 1 = J r + g tt q J P P P = qpμ E qd p P P P Small signal dn/dt ~ jωtn Transient Charge control model Alam ECE 606 S09 13
14 Electrostatics in Equilibrium 2k s ε 0 N E pe, = bi E q N NE N ( ) ( ) 0 x + ( ) ( ) p, C = Vbi VC q N N + N x V V 2k s ε N C C 2k s ε 0 N ne, bi E q NE N NE ( ) ( ) x V V 2k s ε N = 0 + x = ( ) ( ) n, C Vbi VC q N N + N C C Emitter ase Collector V E V C 14
15 Current flow with ias V E C F n,e F p, EE V E C F n,c Alam ECE 606 S09 15
16 Coordinates and Convention Emitter ase Collector N + P N X X X 0 W N = N N = N N = N E DE, A, C AC, D = D D = D D = D E P N C N n = n p = p n = n E0 p0 0 n0 C0 n0 Alam ECE 606 S09 16
17 Carrier Distribution in ase C x x Δ nx ( ) = Ax + = C 1 + D W W D 2 2 ni, qv x n Eβ i, qv x Cβ Δ nx ( ) = ( e 1 ) 1 + ( e 1 ) N W N W 2 + n i, qv Δ (0 ) E β n e 1 N Δ = ( ) ( ) 2 ni, qv ( ) C β Δ nx= W = e 1 N V E V C Alam ECE 606 S09 17
18 Collector and Emitter Electron Current 2 2 ni, ( qv ), ( ) E β x ni 1 1 ( qv C β 1) x Δ nx = e + e N W N W dn qd n n JnC, = qdn = dx W N W N W 2 2 n i, qd i q ( qv ), 1 ( 1) E β n VC β e + e V E J pe, = dp qdp dx V E 2 Dp ni qv = E W N n D β ( e 1) Alam ECE 606 S09 18
19 Current Voltage Characteristics Normal, Active Region E: Forward biased C: Reverse biased 2 2 qd n n i, qd ni, qv JnC, = e 1 + e 1 W N W N qve β n C β ( ) ( ) J log J High level injection C 10 C series resistance, etc. I V CE > 60 mv/dec. V E Have you seen this figure before? 19
20 Outline 1) Equilibrium and forward band diagram 2) Currents in bipolar junction transistors 3) Ebers Moll model 4) Conclusions Alam ECE 606 S09 20
21 Ebers Moll Model Hole diffusion in collector qd n n i, qd ni, qd n ic, qv IC = A e + A + e W N W N WC NC qv ( E β qv 0 1) 0( C β αfif e IR e 1) qve β n p C β ( 1) ( 1) I C =I c,n +I c,p I F I R E C I E α R I R I α F I F I C I E =I E,n +I E,p ( ) I = I e F qve β F0 1 ( qv 1 C β ) I = I e R R0 1 I E qdp nie, qd n n i, qd ni, qv = A + e + A e W E N E W N W E N qve β qv ( 1) ( 1) C β α I e I e F0 R R0 qve β n C β ( 1) ( 1) 21
22 Common ase Configuration I F I R V E (in) E I E N P N I C C V C (out) E I E α R I R α F I F I C C C E I C C How would the model change if this was a Schottky barrier JT? Alam ECE 606 S09 22
23 Common Emitter Configuration IE E C μ C I P IC C E I αrir IF IR VE (in) N P+ VEC (out) I α I F F C π α I α I F F R R E E C C αfif IR β F α FI F α FI F IC = = ( 1 α ) I = I β α F F 1 α F F F This is a practice problem Alam ECE 606 S09 23
24 Conclusion The physics of JT is most easily understood with reference to the physics of junction diodes. The equations can be encapsulated in simple equivalent circuit appropriate for dc, ac, and large signal applications. Design of transistors is far more complicated than this simple model dlsuggests. For a terrific and interesting history of invention of bipolar transistor, read the book Crystal Fire. Alam ECE 606 S09 24
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